KSD1621 NPN Epitaxial Silicon Transistor

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KSD62 NPN Epitaxial Silicon Transistor Features High Current Driver Applications Low Collector-Emitter Saturation Voltage Large Current Capacity and Wide SOA Fast Switching Speed Complement to KSB2 Marking August 2009 6 2 SOT-89. Base 2. Collector 3. Emitter P Y W W Weekly code Year code h FE grade Absolute Maximum Ratings T A = 25 C unless otherwise noted Symbol Parameter Ratings Units V CBO Collector-Base Voltage 30 V O Collector-Emitter Voltage 25 V V EBO Emitter-Base Voltage 6 V Collector Current 2 A P C Collector Power Dissipation (T A = 25 C) Derating Rate above 25 C Mounted on Ceramic Board (250mm 2 x 0.8mm) 500 4 mw mw/ C T J Junction Temperature 50 C T STG Storage Temperature -55 to +50 C KSD62 Rev. B3

Electrical Characteristics T A = 25 C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BV CBO Collector-Base Breakdown Voltage = μa, I E = 0 30 V BO Collector-Emitter Breakdown Voltage = ma, = 0 25 V BV EBO Emitter-Base Breakdown Voltage I E = μa, = 0 6 V BO Collector Cut-off Current V CB = 20V, I E = 0 0 na I EBO Emitter Cut-off Current V BE = 4V, = 0 0 na h FE DC Current Gain = 2V, = 0.A h FE2 = 2V, =.5A (sat) Collector-Emitter Saturation Voltage =.5A, = 75mA 0.8 0.4 V V BE (sat) Base-Emitter Saturation Voltage =.5A, = 75mA 0.85.2 V f T Current Gain Bandwidth product = V, = 50mA 50 MHz C ob Output Capacitance V CB = V, I E = 0, f = MHz 9 pf t ON Turn On Time * V CC = 2V, V BE = 5V 60 ns t STG Storage Time * = -2 = 25mA 500 ns t F Fall Time * = 0.5A, R L = 25Ω 25 ns 0 65 560 h FE Classification Classification R S T U h FE 0 ~ 200 40 ~ 280 200 ~ 400 280 ~ 560 Package Marking and Ordering Information Device Device Marking Package Reel Size Tape Width Quantity KSD62RTF KSD62STF KSD62TTF KSD62UTF Line : 62 Line 2: R&3 Line : 62 Line 2: S&3 Line : 62 Line 2: T&3 Line : 62 Line 2: U&3 SOT-89 3 -- 4,000 SOT-89 3 -- 4,000 SOT-89 3 -- 4,000 SOT-89 3 -- 4,000 KSD62 Rev. B3 2

Typical Performance Characteristics Figure. Static Characteristic 2.0 = 50mA = 30mA = 20mA.6 = ma.2 = 8mA = 6mA 0.8 = 4mA 0.4 = 2mA = 0 0.0 0.0 0.2 0.4 0.6 0.8.0 [V], COLLECTOR-EMITTER VOLTAGE Figure 3. Collector-Emitter Saturation Voltage Figure 2. DC Current Gain h FE, DC CURRENT GAIN 00 0 0.0 0. Figure 4. Base-Emitter On Voltage = 2V (sat)[v], SATURATION VOLTAGE 0. = 3.2 2.8 2.4 2.0.6.2 0.8 0.4 = 2V 0.0 0.0 0. 0.0 0.0 0.2 0.4 0.6 0.8.0.2 Figure 5. Collector Output Capacitance V BE [V], BASE-EMITTER VOLTAGE Figure 6. Current Gain Bandwidth Product C ob [pf], CAPACITANCE 00 0 I E =0 f = MHz 0. 0 f T [MHz], CURRENT GAIN-BANDWIDTH PRODUCT 00 0 0. = V V CB [V], COLLECTOR-BASE VOLTAGE KSD62 Rev. B3 3

Typical Performance Characteristics (Continued) Figure 7. Safe Operating Area 0. MAX. (Pulse) MAX. (DC) T a =25 o C Single Pulse Mounted on Ceramic Board (250mm 2?.8mm) 0ms ms 0.0 0. 0 [V], COLLECTOR-EMITTER VOLTAGE ms Figure 8. Power Derating P C [W], POWER DISSIPATION 0.8 0.4 No Heat Sink 0.0 0 50 0 50 200 T a [ o C], AMBIENT TEMPERATURE KSD62 Rev. B3 4

Mechanical Dimensions 4.50 ±0.20.50 ±0.20.65 ±0. C0.2 SOT-89 2.50 ±0.20 (0.50) 4. ±0.20 (0.40) (.) 0.50 ±0..50 TYP.50 TYP 0.40 ±0. 0.40 +0. 0.05 Dimensions in Millimeters KSD62 Rev. B3 5

TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower Auto-SPM Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic EcoSPARK EfficentMax EZSWITCH * * Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FETBench FlashWriter * FPS F-PFS FRFET Global Power Resource SM Green FPS Green FPS e-series Gmax GTO IntelliMAX ISOPLANAR MegaBuck MICROCOUPLER MicroFET MicroPak MillerDrive MotionMax Motion-SPM OPTOLOGIC OPTOPLANAR PDP SPM Power-SPM PowerTrench PowerXS Programmable Active Droop QFET QS Quiet Series RapidConfigure * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. Saving our world, mw/w/kw at a time SmartMax SMART START SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SupreMOS SyncFET Sync-Lock * The Power Franchise TinyBoost TinyBuck TinyCalc TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TriFault Detect TRUECURRENT * SerDes UHC Ultra FRFET UniFET VCX VisualMax XS DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete Formative / In Design First Production Full Production Not In Production Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I4 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com