KSD62 NPN Epitaxial Silicon Transistor Features High Current Driver Applications Low Collector-Emitter Saturation Voltage Large Current Capacity and Wide SOA Fast Switching Speed Complement to KSB2 Marking August 2009 6 2 SOT-89. Base 2. Collector 3. Emitter P Y W W Weekly code Year code h FE grade Absolute Maximum Ratings T A = 25 C unless otherwise noted Symbol Parameter Ratings Units V CBO Collector-Base Voltage 30 V O Collector-Emitter Voltage 25 V V EBO Emitter-Base Voltage 6 V Collector Current 2 A P C Collector Power Dissipation (T A = 25 C) Derating Rate above 25 C Mounted on Ceramic Board (250mm 2 x 0.8mm) 500 4 mw mw/ C T J Junction Temperature 50 C T STG Storage Temperature -55 to +50 C KSD62 Rev. B3
Electrical Characteristics T A = 25 C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BV CBO Collector-Base Breakdown Voltage = μa, I E = 0 30 V BO Collector-Emitter Breakdown Voltage = ma, = 0 25 V BV EBO Emitter-Base Breakdown Voltage I E = μa, = 0 6 V BO Collector Cut-off Current V CB = 20V, I E = 0 0 na I EBO Emitter Cut-off Current V BE = 4V, = 0 0 na h FE DC Current Gain = 2V, = 0.A h FE2 = 2V, =.5A (sat) Collector-Emitter Saturation Voltage =.5A, = 75mA 0.8 0.4 V V BE (sat) Base-Emitter Saturation Voltage =.5A, = 75mA 0.85.2 V f T Current Gain Bandwidth product = V, = 50mA 50 MHz C ob Output Capacitance V CB = V, I E = 0, f = MHz 9 pf t ON Turn On Time * V CC = 2V, V BE = 5V 60 ns t STG Storage Time * = -2 = 25mA 500 ns t F Fall Time * = 0.5A, R L = 25Ω 25 ns 0 65 560 h FE Classification Classification R S T U h FE 0 ~ 200 40 ~ 280 200 ~ 400 280 ~ 560 Package Marking and Ordering Information Device Device Marking Package Reel Size Tape Width Quantity KSD62RTF KSD62STF KSD62TTF KSD62UTF Line : 62 Line 2: R&3 Line : 62 Line 2: S&3 Line : 62 Line 2: T&3 Line : 62 Line 2: U&3 SOT-89 3 -- 4,000 SOT-89 3 -- 4,000 SOT-89 3 -- 4,000 SOT-89 3 -- 4,000 KSD62 Rev. B3 2
Typical Performance Characteristics Figure. Static Characteristic 2.0 = 50mA = 30mA = 20mA.6 = ma.2 = 8mA = 6mA 0.8 = 4mA 0.4 = 2mA = 0 0.0 0.0 0.2 0.4 0.6 0.8.0 [V], COLLECTOR-EMITTER VOLTAGE Figure 3. Collector-Emitter Saturation Voltage Figure 2. DC Current Gain h FE, DC CURRENT GAIN 00 0 0.0 0. Figure 4. Base-Emitter On Voltage = 2V (sat)[v], SATURATION VOLTAGE 0. = 3.2 2.8 2.4 2.0.6.2 0.8 0.4 = 2V 0.0 0.0 0. 0.0 0.0 0.2 0.4 0.6 0.8.0.2 Figure 5. Collector Output Capacitance V BE [V], BASE-EMITTER VOLTAGE Figure 6. Current Gain Bandwidth Product C ob [pf], CAPACITANCE 00 0 I E =0 f = MHz 0. 0 f T [MHz], CURRENT GAIN-BANDWIDTH PRODUCT 00 0 0. = V V CB [V], COLLECTOR-BASE VOLTAGE KSD62 Rev. B3 3
Typical Performance Characteristics (Continued) Figure 7. Safe Operating Area 0. MAX. (Pulse) MAX. (DC) T a =25 o C Single Pulse Mounted on Ceramic Board (250mm 2?.8mm) 0ms ms 0.0 0. 0 [V], COLLECTOR-EMITTER VOLTAGE ms Figure 8. Power Derating P C [W], POWER DISSIPATION 0.8 0.4 No Heat Sink 0.0 0 50 0 50 200 T a [ o C], AMBIENT TEMPERATURE KSD62 Rev. B3 4
Mechanical Dimensions 4.50 ±0.20.50 ±0.20.65 ±0. C0.2 SOT-89 2.50 ±0.20 (0.50) 4. ±0.20 (0.40) (.) 0.50 ±0..50 TYP.50 TYP 0.40 ±0. 0.40 +0. 0.05 Dimensions in Millimeters KSD62 Rev. B3 5
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