Intersil ISL6608CR Synchronous Rectified MOSFET Driver Circuit Analysis

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August 31, 2004 Intersil ISL6608CR Synchronous Rectified MOSFET Driver Circuit Analysis Table of Contents Introduction... Page 1 List of Figures... Page 2 Device Summary Sheet... Page 4 Schematics... Tab 1 Signal Naming Conventions and Symbol Definitions... Tab 2 Signal Cross-Reference List... Tab 3 For questions, comments, or more information about this report, or for any additional technical needs concerning semiconductor technology, please call Sales at Chipworks. Rev. F1.0

Some of the information in this report may be covered by patents, mask and/or copyright protection. This report should not be taken as an inducement to infringe on these rights. 2004 Chipworks Incorporated This report is provided exclusively for the use of the purchasing organization. It can be freely copied and distributed within the purchasing organization, conditional upon the accompanying Chipworks accreditation remaining attached. Distribution of the entire report outside of the purchasing organization is strictly forbidden. The use of portions of the document for the support of the purchasing organization's corporate interest (e.g., licensing or marketing activities) is permitted, as defined by the fair use provisions of the copyright act. Accreditation to Chipworks must be attached to any portion of the reproduced information.

Intersil ISL6608CR Synchronous Rectified MOSFET Driver IC Page 1 Introduction The Intersil ISL6608CR Synchronous Rectified MOSFET Driver IC is designed for high-current multiphase power devices used in telecom and computing applications where a high performance-to-price ratio is required. The Intersil ISL6608CR driver IC not only offers fast switching with up to 4A drive current for synchronous-buck configured N-channel MOSFETs, but is also able to switch to a diode-emulation standard-buck mode to smoothly start up into prebiased loads. The Intersil ISL6608CR Synchronous Rectified MOSFET Driver IC includes an adaptive shoot-through protection circuit (Figure 4.0.0 Shoot-Through Protection) to prevent simultaneous conduction of both MOSFETs. High drive capability ensures crisp FET switching, which prevents shoot through and improves conversion efficiency. The Intersil ISL6608 Synchronous Rectified MOSFET Driver IC also features a three-state PWM input that, working together with Intersil s multiphase PWM controllers, will prevent a negative transient on the output voltage when the output is being shut down. Therefore, this feature eliminates the Schottky diode that is typically used in a microprocessor power system to protect the microprocessor from reversed-output-voltage damage. There are several components in the ISL6608 devices that were assumed based on the circuit s functionality. These components are: NPN Type 2 and Type 3 transistor (Figure 0.3.1 Annotated Photograph of NPN Type 2 Transistor and Figure 0.3.2 Annotated Photograph of NPN Type 3 Transistor), PNP transistor (Figure 0.3.3 Annotated Photograph of PNP Transistor), and Zener Diodes (Figure 0.3.5 Photograph of Zener Diode). These components are recommended for cross-section analysis to accurately identify what they are. This report contains the following information: a set of schematics with device size measurements, organized in a hierarchical manner and accompanied by signal descriptions and cross references a signal reference list summarizing all signal sources and destinations package, x-ray, die markings and die photographs device summary sheets All of the information in this report was derived by Chipworks from high magnification photographs and microscopy observations of the following sample: Intersil ISL6608CR Synchronous Rectified MOSFET Driver Date Code: Unknown Die Markings: INTERSIL 2003 (M) ISL6208 07-01-03 Rev. 1.0 8/31/04 10:34 AM Y:\Reports_Public\Intersil\ISL6608CR\CAR\Report\intro.doc

Intersil ISL6608CR Synchronous Rectified MOSFET Driver IC Page 2 List of Figures 0.1.1 Package Markings 0.1.2 Package X-Ray 0.1.3 Pin Configuration 0.1.4 Die Markings 0.2.0 Die Photograph Metal 3 0.2.1 Die Photograph Metal 2 0.2.2 Die Photograph Metal 1 0.2.3 Die Photograph Polysilicon 0.2.4 Annotated Die Photograph Metal 3 0.2.5 Die Architecture 0.3.0 Annotated Photograph of NPN Type 1 Transistor 0.3.1 Annotated Photograph of NPN Type 2 Transistor 0.3.2 Annotated Photograph of NPN Type 3 Transistor 0.3.3 Annotated Photograph of PNP Transistor 0.3.4 Photograph of Schottky Diode 0.3.5 Photograph of Zener Diode 0.4.0 Buffer Cell 1 Definition 0.4.1 Buffer Cell 2 Definition 0.4.2 Buffer Cell 3 Definition 0.4.3 Buffer Cell 4 Definition 1.0.0 Top Level Diagram 2.0.0 Reference Generator 3.0.0 Control Logic 4.0.0 Shoot-Through Protection 5.0.0 {UGATE} Output Driver 6.0.0 {LGATE} Output Driver Rev. 1.0 8/31/04 10:35 AM Y:\Reports_Public\Intersil\ISL6608CR\CAR\Report\figlist.doc

Intersil ISL6608CR Synchronous Rectified MOSFET Driver IC Page 3 A.1.0 Symbol Conventions - 1 A.1.1 Symbol Conventions - 2 A.2.0 Symbol Definitions - 1 A.2.1 Symbol Definitions - 2 A.2.2 Symbol Definitions - 3 A.3.0 Logic Gate Size Notation A.4.0 Transistor Size Notation A.5.0 Capacitor Size Notation Rev. 1.0 8/31/04 10:35 AM Y:\Reports_Public\Intersil\ISL6608CR\CAR\Report\figlist.doc