Photosensitivity, A/W Capacitance, pf Photosensitivity, A/W Current, ma Near-Infrared (NIR) Photodiode Lms25PD-10 series Device parameters Symbol Value Units Sensitive area diameter Reverse voltage V r 1 V Operating/ storage temperature Soldering temperature (can be applied for not more than 5 secs) *Temperature range may vary for different packaging types. T opr / T stg -60..+90* C T sol +180 C All parameters refer to photodiode operation at ambient temperature 25 C unless otherwise stated. d 1.0 mm Photodiode parameters Conditions Symbol Value Units Cut-off wavelength (at 10% level) 1 Max. sensitivity range (at 80% level) 1 Dark current (typical/ maximal) 2 Shunt resistance (minimal/ typical) 2 Capacitance (typical/ maximal) 1 Photosensitivity (minimal/ typical) 2 Noise equivalent power (typical/ maximal) 2 Detectivity (minimal/ typical) 2 - λ cut 2.5 mm - λ p 1.65-2.35 mm V r = 1 V I d typ 15 / max 22 ma V r = 10 mv R sh min 8 / typ 15 kω V r = 10 mv C typ 1000 / max 1100 pf λ = 2.2 µm S min 1.0 / typ 1.1 A/W λ = 2.2 µm NEP typ 9.5*10 ¹³ / max 1.4*10 ¹² W/Hz 1/2 λ = 2.2 µm D* min 6.2*10¹⁰ / typ 9.3*10¹⁰ cm. Hz 1/2. W -1 1 Parameter tested for representative sampling. 2 Parameter tested for each device. Typical spectral response Typical current-voltage characteristic 1,4 1,2 1 0,8 0,6 0,4 0,2 0 1000 1500 2000 2500 Wavelength, nm Temperature shift of spectral response 1,6 1,4 1,2 1 0,8 0,6 0,4 0,2 0 5 C 25 C 50 C 1000 1500 2000 2500 Wavelength, nm 100 80 60 40 20 0-5000 -4000-3000 -2000-1000 -20 0 1000 Voltage, mv Capacitance vs. temperature (Vr = 10 mv) 1200 1100 1000 900 800-40 -20 0 20 40 60 80 100 Temperature, C 10, A, Kurchatova str., 1N, St-Petersburg, 194223, Russia; info@lmsnt.com; www.lmsnt.com page 1 (9)
Dark current, μa Resistance, kohm Near-Infrared (NIR) Photodiode Dark current vs. temperature (Vr = 1 V) 1000 100 10 1 0,1 0,01 0,001-40 0 40 80 120 160 Temperature, C Shunt resistance vs. temperature (Vr = 10 mv) 10000 1000 100 10 1 0,1 0,01-50 0 50 100 150 Temperature, C 10, A, Kurchatova str., 1N, St-Petersburg, 194223, Russia; info@lmsnt.com; www.lmsnt.com page 2 (9)
Packages* Model TO-18 with a cap without a glass window Lms25PD-10 TO-18 with a parabolic reflector without a glass window Lms25PD-10-R TO-18 with a parabolic reflector with a glass window Lms25PD-10-RW TO-5 with a built-in thermocooler and thermoresistor, covered by a cap with a glass window Lms25PD-10-TEM TO-5 with a built-in thermocooler and thermoresistor, covered by a parabolic reflector with a glass window Lms25PD-10-TEM-R PD with a built-in preamplifier; TO-18 with a parabolic reflector without a window in an aluminum tube Lms25PD-10-R-PA PD with a built-in preamplifier; TO-18 with a parabolic reflector with a window in an aluminum tube Lms25PD-10-RW-PA *Standard photodiode packaging is non-hermetical, so that condensation during device operation and storage must be prevented. Recommended modes of PD operation PD used as a current source (photovoltaic mode) PD used in a photoconductive mode (under reverse bias) We recommend using photovoltaic mode, when PD is used under no reverse bias. Use photoconductive mode (mode with reverse bias) with caution. IMPORTANT CAUTIONS: please check your connection circuit before turning on the PD; please mind the PD polarity: PD anode is marked with a RED dot; please do not connect the PD to the multimeter. Related products: Light emitting diodes (LEDs) - sources of IR radiation; PAb preamplifier - amplifies photocurrent generated by a PD and converts it into a voltage signal; SDM synchronous detector - enables synchronous operation of a PD coupled with a preamplifier and an LED coupled with a driver; performs convertion of an output PD preamplifier signal into DC voltage signal. 10, A, Kurchatova str., 1N, St-Petersburg, 194223, Russia; info@lmsnt.com; www.lmsnt.com page 3 (9)
Lms25PD-10 10, A, Kurchatova str., 1N, St-Petersburg, 194223, Russia; info@lmsnt.com; www.lmsnt.com page 4 (9)
Lms25PD-10-R 10, A, Kurchatova str., 1N, St-Petersburg, 194223, Russia; info@lmsnt.com; www.lmsnt.com page 5 (9)
Lms25PD-10-RW 10, A, Kurchatova str., 1N, St-Petersburg, 194223, Russia; info@lmsnt.com; www.lmsnt.com page 6 (9)
Lms25PD-10-TEM 10, A, Kurchatova str., 1N, St-Petersburg, 194223, Russia; info@lmsnt.com; www.lmsnt.com page 7 (9)
Lms25PD-10-TEM-R 10, A, Kurchatova str., 1N, St-Petersburg, 194223, Russia; info@lmsnt.com; www.lmsnt.com page 8 (9)
12,0 8,4 12,0 8,4 Near-Infrared (NIR) Photodiode Lms25PD-10-R-PA 40,0 photodiode chip 2,6 preamplifier board Lms25PD-10-RW-PA 40,0 photodiode chip 2,5 2,6 preamplifier board Power input voltage: +5 V, stabilized; Connections: The output of PD with a built-in preamplifier has four wires: "+" power input (to the "+5V" of the power output terminal block of the SDM synchronous detector); "ground" power input (to the "0V" of the power output terminal block of the SDM synchronous detector); "ground" output photodiode signal (to the "0V" of the signal input terminal block of the SDM synchronous detector); "+" output photodiode signal (to the "IN" of the signal input terminal block of the SDM synchronous detector). For the proper connection mind the colours of the wires pointed in the technical data provided with the photodiode. 10, A, Kurchatova str., 1N, St-Petersburg, 194223, Russia; info@lmsnt.com; www.lmsnt.com page 9 (9)