VS-1ETF2S-M3, VS-1ETF4S-M3, VS-1ETF6S-M3 Series www.vishay.com Surface Mount Fast Soft Recovery Rectifier Diode, 1 1 2 3 D 2 PK (TO-263) PRIMRY CHRCTERISTICS ase cathode + 2 1 3 node - - node I F(V) 1 V R 2 V, 4 V, 6 V V F at I F 1.2 V I FSM 14 t rr 5 ns T J max. 15 C Snap factor.6 Package D 2 PK (TO-263) Circuit configuration Single FETURES Glass passivated pellet chip junction Meets MSL level 1, per J-STD-2, LF maximum peak of 245 C Designed and qualified according to JEDEC -JESD 47 Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PPLICTIONS Output rectification and freewheeling in inverters, choppers and converters Input rectifications where severe restrictions on conducted EMI should be met DESCRIPTION The VS-1ETF..S-M3 fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. MJOR RTINGS ND CHRCTERISTICS SYMOL CHRCTERISTICS VLUES UNITS V RRM 2 to 6 V I F(V) Sinusoidal waveform 1 I FSM 14 t rr 1, 1 /μs 5 ns V F 1, T J = 25 C 1.2 V T J Range -4 to +15 C VOLTGE RTINGS PRT NUMER V RRM, MXIMUM PEK REVERSE VOLTGE V V RSM, MXIMUM NON-REPETITIVE PEK REVERSE VOLTGE V VS-1ETF2S-M3 2 3 VS-1ETF4S-M3 4 5 VS-1ETF6S-M3 6 7 I RRM T 15 C m 2.5 SOLUTE MXIMUM RTINGS PRMETER SYMOL TEST CONDITIONS VLUES UNITS Maximum average forward current I F(V) T C = 128 C, 18 conduction half sine wave 1 Maximum peak one cycle 1 ms sine pulse, rated V RRM applied 115 I non-repetitive surge current FSM 1 ms sine pulse, no voltage reapplied 14 Maximum I 2 t for fusing I 2 1 ms sine pulse, rated V RRM applied 66 t 2 s 1 ms sine pulse, no voltage reapplied 94 Maximum I 2 t for fusing I 2 t t =.1 ms to 1 ms, no voltage reapplied 94 2 s Revision: 4-Jan-18 1 Document Number: 94884 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?91
VS-1ETF2S-M3, VS-1ETF4S-M3, VS-1ETF6S-M3 Series www.vishay.com ELECTRICL SPECIFICTIONS PRMETER SYMOL TEST CONDITIONS VLUES UNITS Maximum forward voltage drop V FM 1, T J = 25 C 1.2 V Forward slope resistance r t 12.7 m T J = 15 C Threshold voltage V F(TO) 1.25 V T J = 25 C.1 Maximum reverse leakage current I RM V R = rated V RRM T J = 15 C 2.5 m RECOVERY CHRCTERISTICS PRMETER SYMOL TEST CONDITIONS VLUES UNITS Reverse recovery time t rr I F at 1 pk 2 ns Reverse recovery current I rr 25 /μs 2.75 Reverse recovery charge Q rr 25 C.32 μc Snap factor S.6 I FM dir dt t rr t Q rr I RM(REC) THERML - MECHNICL SPECIFICTIONS PRMETER SYMOL TEST CONDITIONS VLUES UNITS Maximum junction and storage temperature range T J, T Stg -4 to +15 C Maximum thermal resistance junction to case R thjc DC operation 1.5 Maximum thermal resistance junction to ambient (PC mount) R (1) thj 4 C/W pproximate weight Marking device Case style D 2 PK (TO-263) Note (1) When mounted on 1" square (65 mm 2 ) PC of FR-4 or G-1 material 4 oz. (14 μm) copper 4 C/W. For recommended footprint and soldering techniques refer to application note #N-994 2 g.7 oz. 1ETF2S 1ETF4S 1ETF6S Revision: 4-Jan-18 2 Document Number: 94884 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?91
VS-1ETF2S-M3, VS-1ETF4S-M3, VS-1ETF6S-M3 Series www.vishay.com Maximum llowable Case Temperature ( C) 15 145 14 135 13 R thjc (DC) = 1.5 C/W Ø Conduction angle 125 12 3 6 9 18 12 2 4 6 8 1 12 Maximum verage Forward Power Loss (W) 2 16 12 8 4 T J = 15 C RMS limit 3 4 8 6 9 18 12 12 DC Ø Conduction period 16 verage Forward Current () verage Forward Current () Fig. 1 - Current Rating Characteristics Fig. 4 - Forward Power Loss Characteristics Maximum llowable Case Temperature ( C) 15 145 14 135 13 125 12 3 6 R thjc (DC) = 1.5 C/W 9 12 Ø Conduction period 18 DC 2 4 6 8 1 12 14 16 Peak Half Sine Wave Forward Current () 13 12 11 1 9 8 7 6 5 4 t any rated load condition and with rated Vrrm applied following surge. Initial Tj = 15 C at 6 Hz.83s at 5 Hz.1s VS- 3 1 1 1 verage Forward Current () Fig. 2 - Current Rating Characteristics Number of Equal mplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Maximum verage Forward Power Loss (W) 16 14 12 1 8 6 4 2 RMS limit 2 3 4 6 6 12 9 T J = 15 C 8 18 Ø Conduction angle 1 Peak Half Sine Wave Forward Current () 15 13 11 9 7 5 3 Maximum non-repetitive surge current versus pulse train duration. Initial Tj = Tj max. No voltage reapplied Rated Vrrm reapplied VS- 1.1.1 1 1 verage Forward Current () Pulse Train Duration (s) Fig. 3 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 4-Jan-18 3 Document Number: 94884 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?91
VS-1ETF2S-M3, VS-1ETF4S-M3, VS-1ETF6S-M3 Series www.vishay.com Instantaneous Forward Current () 1 1 T J = 15 C T J = 25 C 1.5 1. 1.5 2. 2.5 3. Q rr - Typiacl Reverse Recovery Charge (µc) 1.4 1.2 T J = 25 C I FM = 2 1. I FM = 1.8.6.4 I FM = 5 I FM = 2.2 I FM = 1 4 8 12 16 2 Instantaneous Forward Voltage (V) di/dt - Rate of Fall of Forward Current (/µs) Fig. 7 - Forward Voltage Drop Characteristics Fig. 1 - Recovery Charge Characteristics, T J = 25 C t rr - Typiacl Reverse Recovery Time (µs).4.3.2.1 I FM = 2 I FM = 1 T J = 25 C I FM = 5 I FM = 1 I FM = 8 I FM = 2 4 8 12 16 2 di/dt - Rate of Fall of Forward Current (/µs) Fig. 8 - Recovery Time Characteristics, T J = 25 C Q rr - Typiacl Reverse Recovery Charge (µc) 2.5 2. 1.5 1..5 T J = 15 C I FM = 2 I FM = 1 I FM = 5 I FM = 2 I FM = 1 4 8 12 16 2 di/dt - Rate of Fall of Forward Current (/µs) Fig. 11 - Recovery Charge Characteristics, T J = 15 C t rr - Typiacl Reverse Recovery Time (µs).4.3.2.1 T J = 15 C I FM = 2 I FM = 1 I FM = 5 I FM = 2 I rr - Typiacl Reverse Recovery Current () 15 12 9 6 3 T J = 25 C I FM = 2 I FM = 1 I FM = 5 I FM = 2 I FM = 1 I FM = 1 4 8 12 16 2 di/dt - Rate of Fall of Forward Current (/µs) Fig. 9 - Recovery Time Characteristics, T J = 15 C 4 8 12 16 2 di/dt - Rate of Fall of Forward Current (/µs) Fig. 12 - Recovery Current Characteristics, T J = 25 C Revision: 4-Jan-18 4 Document Number: 94884 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?91
VS-1ETF2S-M3, VS-1ETF4S-M3, VS-1ETF6S-M3 Series www.vishay.com I rr - Typiacl Reverse Recovery Current () 2 16 12 8 4 T J = 15 C I FM = 2 I FM = 1 I FM = 5 I FM = 2 I FM = 1 4 8 12 16 2 di/dt - Rate of Fall of Forward Current (/µs) Fig. 13 - Recovery Current Characteristics, T J = 15 C Z thjc - Transient Thermal Impedance ( C/W) 1 1.1.1 Single pulse D =.5 D =.33 D =.25 D =.17 D =.8.1.1.1.1 1 Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance Z thjc Characteristics Steady state value (DC operation) 1 Revision: 4-Jan-18 5 Document Number: 94884 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?91
VS-1ETF2S-M3, VS-1ETF4S-M3, VS-1ETF6S-M3 Series www.vishay.com ORDERING INFORMTION TLE Device code VS- 1 E T F 6 S TRL -M3 1 2 3 4 5 6 7 8 9 1 - product 2 - Current rating (1 = 1 ) 3 - Circuit configuration: E = single 4 - Package: T = D 2 PK (TO-263) 5 - Type of silicon: F = fast soft recovery rectifier 6 - Voltage code x 1 = V RRM 7 - S = surface mountable 2 = 2 V 4 = 4 V 6 = 6 V 8 - None = tube TRR = tape and reel (right oriented) TRL = tape and reel (left oriented) 9 - -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMTION (Example) PREFERRED P/N QUNTITY PER T/R MINIMUM ORDER QUNTITY PCKGING DESCRIPTION VS-1ETF2S-M3 5 1 ntistatic plastic tubes VS-1ETF2STRR-M3 8 8 13" diameter reel VS-1ETF2STRL-M3 8 8 13" diameter reel VS-1ETF4S-M3 5 1 ntistatic plastic tubes VS-1ETF4STRR-M3 8 8 13" diameter reel VS-1ETF4STRL-M3 8 8 13" diameter reel VS-1ETF6S-M3 5 1 ntistatic plastic tubes VS-1ETF6STRR-M3 8 8 13" diameter reel VS-1ETF6STRL-M3 8 8 13" diameter reel Dimensions Part marking information Packaging information LINKS TO RELTED DOCUMENTS www.vishay.com/doc?96164 www.vishay.com/doc?95444 www.vishay.com/doc?96424 Revision: 4-Jan-18 6 Document Number: 94884 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?91
www.vishay.com Part Marking Information D 2 PK xxxxxx (1) Part number Example: This is a xxxxxx (1) with assembly lot code C, assembled on WW 2, 21 ssembly lot code V ZYWWX C Product version (optional): Z (replaced according below table) Date code: Year = 21 Week 2 Line X Note (1) If part number contain H as last digit, product is EC-Q11 qualified ENVIRONMENTL NMING CODE (Z) E F M N G PRODUCT DEFINITION Termination lead (Pb)-free Totally lead (Pb)-free RoHS-compliant and termination lead (Pb)-free RoHS-compliant and totally lead (Pb)-free Halogen-free, RoHS-compliant, and termination lead (Pb)-free Halogen-free, RoHS-compliant, and totally lead (Pb)-free Green Revision: 21-Jun-17 1 Document Number: 95444 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?91
www.vishay.com DIMENSIONS in millimeters and inches D 2 PK Outline Dimensions Conforms to JEDEC outline D 2 PK (SMD-22) (3) L1 D L2 2 x e (2)(3) E 1 2 3 4 Lead tip H (2) 2 x b2 2 x b C Detail.1 M M to 8 Gauge plane L3 c c2 ±.4 M L L4 Detail Rotated 9 CW Scale: 8:1 (E) E1 View - H 1 (3) Seating plane (D1) (3) 17.9 (.7) 15. (.625) 2.32 MIN. (.8) Plating 2.64 (.13) 2.41 (.96) (c) Pad layout 11. MIN. (.43) (4) b1, b3 (b, b2) Section - and C - C Scale: None 9.65 MIN. (.38) 3.81 MIN. (.15) ase Metal c1 (4) SYMOL MILLIMETERS INCHES MILLIMETERS INCHES NOTES SYMOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES 4.6 4.83.16.19 D1 6.86 8..27.315 3 1..254..1 E 9.65 1.67.38.42 2, 3 b.51.99.2.39 E1 7.9 8.8.311.346 3 b1.51.89.2.35 4 e 2.54 SC.1 SC b2 1.14 1.78.45.7 H 14.61 15.88.575.625 b3 1.14 1.73.45.68 4 L 1.78 2.79.7.11 c.38.74.15.29 L1-1.65 -.66 3 c1.38.58.15.23 4 L2 1.27 1.78.5.7 c2 1.14 1.65.45.65 L3.25 SC.1 SC D 8.51 9.65.335.38 2 L4 4.78 5.28.188.28 Notes (1) Dimensioning and tolerancing per SME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed.127 mm (.5") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum and to be determined at datum plane H (6) Controlling dimension: inches (7) Outline conforms to JEDEC outline TO-263 Revision: 13-Jul-17 1 Document Number: 96164 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?91
www.vishay.com Packaging Information D 2 PK (TO-263) CRRIER TPE FOR TPE ND REEL LEFT in millimeters 16 ±.1 1.35 ±.1 Ø 1.55 ±.5 4 ±.1 2 ±.1 1.75 ±.1 11.5 ±.1 5.25 ±.2.4 ±.1 24 ±.3 1.3 ±.1 16.13 ±.1 Section - Ø 1.5 +.25 -.1 Ø 4.9 +.2 -.5 Cover tape (1) 5 ±.2 Ø 1.8 +.2 -.1 Section - 1.5 ±.2 Note (1) For dimensions, see next pages CRRIER TPE FOR TPE ND REEL RIGHT in millimeters 16 ±.1 Ø 1.55 ±.5 4 ±.1 2 ±.1 1.75 ±.1 Ø 4.9 +.2 -.5.4 ±.1 1.35 ±.1 11.5 ±.1 24 ±.3 1.3 ±.1 16.13 ±.1 Section - Ø 1.5 +.25 Cover tape (1) -.1 5.25 ±.2 5 ±.2 Ø 1.8 +.2 -.1 1.5 ±.2 Section - Note (1) For dimensions, see next pages Revision: 13-Oct-17 1 Document Number: 96424 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?91
www.vishay.com Packaging Information REEL FOR CRRIER TPE in millimeters 29 ± 1 Ø 33 ± 2. 24.4 ±.3 Ø 1 ± 1 2.3 ±.2 12 12 6.2 ±.2 Ø 13.2 ±.2 Ø 21±.4 CRRIER TPE ND REEL PCKGING D 2 PK (TO-263) Top Cover Tape Embossed Carrier Tape Component Cavity Revision: 13-Oct-17 2 Document Number: 96424 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?91
www.vishay.com Packaging Information COVER TPE FOR CRRIER TPE in millimeters Top view: W Section view: Y Y T Section Y - Y PPLICTION D 2 PK (TO-263) COVER TPE WIDTH W COVER TPE THICKNESS T CRRIER TPE WIDTH MTERIL 21.3 ±.1.6 ±.1 24 ntistatic/treated/transparent/polyester Revision: 13-Oct-17 3 Document Number: 96424 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?91
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