April V Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description The combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SSOT-6 package. This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Features MOSFET:. A, V. R DS(ON) = mω @ V GS =.V R DS(ON) = mω @ V GS =.V Low Gate Charge (.7nC typ) Compact industry standard SuperSOT -6 package Schottky: V F <. V @ A S D D 6 TM SuperSOT -6 Pin SuperSOT -6 G S G Absolute Maximum Ratings TA= o C unless otherwise noted Symbol Parameter Ratings Units V DSS MOSFET Drain-Source Voltage V V GSS MOSFET Gate-Source Voltage ± V I D Drain Current Continuous (Note a). A P D Pulsed 6 Power Dissipation for Single Operation (Note a).96 W (Note b).9 (Note c).7 T J, T STG Operating and Storage Junction Temperature Range to + C V RRM Schottky Repetitive Peak Reverse Voltage V I O Schottky Average Forward Current (Note a) A Thermal Characteristics R θja Thermal Resistance, Junction-to-Ambient (Note a) C/W R θjc Thermal Resistance, Junction-to-Case (Note ) 6 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity.9 7 8mm units Fairchild Semiconductor Corporation Rev C(W)
Electrical Characteristics T A = C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain Source Breakdown Voltage V GS = V, I D = µa V BVDSS T J Breakdown Voltage Temperature Coefficient I D = µa, Referenced to C 6 mv/ C I DSS Zero Gate Voltage Drain Current V DS = 6 V, V GS = V µa I GSSF Gate Body Leakage, Forward V GS = V, V DS = V na I GSSR Gate Body Leakage, Reverse V GS = V, V DS = V na On Characteristics (Note ) V GS(th) Gate Threshold Voltage V DS = V GS, I D = µa.6.. V VGS(th) T J R DS(on) Gate Threshold Voltage Temperature Coefficient Static Drain Source On Resistance I D = µa, Referenced to C mv/ C V GS =. V, I D =. A V GS =. V, I D =.8 A V GS=. V, I D =. A, T J= C I D(on) On State Drain Current V GS =. V, V DS = V 6 A g FS Forward Transconductance V DS = V, I D =. A 6 S Dynamic Characteristics C iss Input Capacitance V DS = V, V GS = V, 69 pf C oss Output Capacitance f =. MHz 8 pf C rss Reverse Transfer Capacitance 9 pf R G Gate Resistance V GS = mv, f =. MHz 7.6 Ω Switching Characteristics (Note ) t d(on) Turn On Delay Time V DD = V, I D = A, 8 6 ns t r Turn On Rise Time V GS =. V, R GEN = 6 Ω ns t d(off) Turn Off Delay Time ns t f Turn Off Fall Time mω 8 ns Q g Total Gate Charge V DS = V, I D =. A,.7. nc Q gs Gate Source Charge V GS =. V nc Q gd Gate Drain Charge nc Drain Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain Source Diode Forward Current.8 A V SD Drain Source Diode Forward V GS = V, I S =.8 A(Note ).8. V Voltage t rr Diode Reverse Recovery Time I F =. A,. ns Diode Reverse Recovery Charge d if/d t = A/µs. nc Q rr Schottky Diode Characteristics I R Reverse Leakage V R = V T J = C 8 µa T J = C ma V R = V T J = C µa T J = C. ma V F Forward Voltage I F = ma T J = C.. V T J = C.6. I F = A T J = C.. V T J = C.. Rev C(W)
Electrical Characteristics T A = C unless otherwise noted Notes:. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. a) C/W when mounted on a. in pad of oz. copper. b) C/W when mounted on a. in pad of oz copper c) 8 C/W when mounted on a minimum pad. Scale : on letter size paper. Pulse Test: Pulse Width < µs, Duty Cycle <.% Rev C(W)
Typical Characteristics -I D, DRAIN-SOURCE CURRENT (A) 6 V GS = -.V -.V -.V -.V -.V R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE.6...8.6.. V GS = -.V -.V -.V -.V -.V... -V DS, DRAIN-SOURCE VOLTAGE (V).8 6 - I D, DRAIN CURRENT (A) Figure. On-Region Characteristics. Figure. On-Resistance Variation with Drain Current and Gate Voltage. R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE.6...8 I D = -.A V GS = -.V R DS(ON), ON-RESISTANCE (OHM)...... T A = o C T A = o C I D = -.A.6 - - 7 T J, JUNCTION TEMPERATURE ( o C). -V GS, GATE TO SOURCE VOLTAGE (V) Figure. On-Resistance Variation with Temperature. Figure. On-Resistance Variation with Gate-to-Source Voltage. -I D, DRAIN CURRENT (A) o C V DS = -V T A = - o C o C... -V GS, GATE TO SOURCE VOLTAGE (V) -I S, REVERSE DRAIN CURRENT (A) V GS = V T A = o C. o C. - o C.....6.8. -V SD, BODY DIODE FORWARD VOLTAGE (V) Figure. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. Rev C(W)
Typical Characteristics -V GS, GATE-SOURCE VOLTAGE (V) I D = -.A V DS = -V -V -V Q g, GATE CHARGE (nc) CAPACITANCE (pf) 6 C ISS f = MHz V GS = V C OSS C RSS -V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. I F, FORWARD LEAKAGE CURRENT (A)... T J = o C T J = o C..... V F, FORWARD VOLTAGE (V) I R, REVERSE LEAKAGE CURRENT (A).E- T J = o C.E-.E- T J = o C.E-.E- V R, REVERSE VOLTAGE (V) Figure 9. Schottky Diode Forward Voltage. Figure. Schottky Diode Reverse Current. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE.. D =...... SINGLE PULSE R θja (t) = r(t) + R θja R θja = 8 C/W t t T J - T A = P * R θja (t) Duty Cycle, D = t / t...... Figure. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note c. Transient thermal response will change depending on the circuit board design. P(pk) Rev C(W)
TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks ACEx Bottomless CoolFET CROSSVOLT DenseTrench DOME EcoSPARK E CMOS TM EnSigna TM FACT FACT Quiet Series STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION As used herein: Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user PRODUCT STATUS DEFINITIONS Definition of Terms FAST â FASTr FRFET GlobalOptoisolator GTO HiSeC I C ISOPLANAR LittleFET MicroFET MicroPak MICROWIRE OPTOLOGIC â OPTOPLANAR PACMAN POP Power7 PowerTrench QFET QS A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness Datasheet Identification Product Status Definition â QT Optoelectronics Quiet Series SILENT SWITCHER â SMART START SPM STAR*POWER Stealth SuperSOT - SuperSOT -6 SuperSOT -8 SyncFET TinyLogic TruTranslation UHC UltraFET â VCX Advance Information Preliminary No Identification Needed Formative or In Design First Production Full Production This datasheet contains the design specifications for product development Specifications may change in any manner without notice This datasheet contains preliminary data, and supplementary data will be published at a later date Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design This datasheet contains final specifications Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor The datasheet is printed for reference information only Rev H
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