LM219/LM319 Dual voltage comparator INTEGRATED CIRCUITS. Product data Supersedes data of 1994 Aug 31 File under Integrated Circuits, IC11 Handbook

Similar documents
LM193A/293/A/393/A/2903 Low power dual voltage comparator

NE/SA/SE532 LM258/358/A/2904 Low power dual operational amplifiers

NE/SA/SE5532/5532A Internally-compensated dual low noise operational amplifier

NE/SE5539 High frequency operational amplifier

NE/SA5234 Matched quad high-performance low-voltage operational amplifier

INTEGRATED CIRCUITS MC1408-8

CBTS3306 Dual bus switch with Schottky diode clamping

CBTD3257 Quad 1-of-2 multiplexer/demultiplexer with level shifting

DISCRETE SEMICONDUCTORS DATA SHEET

DATA SHEET. BC847BVN NPN/PNP general purpose transistor DISCRETE SEMICONDUCTORS Nov 07. Product specification Supersedes data of 2001 Aug 30

DATA SHEET. BC618 NPN Darlington transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Oct Nov 05.

DISCRETE SEMICONDUCTORS DATA SHEET

INTEGRATED CIRCUITS. PCA9515 I 2 C bus repeater. Product data Supersedes data of 2002 Mar May 13

DISCRETE SEMICONDUCTORS DATA SHEET. BAP50-03 General purpose PIN diode. Product specification Supersedes data of 1999 May 10.

HSTL bit to 18-bit HSTL to LVTTL memory address latch with 12 kohm pull-up resistor INTEGRATED CIRCUITS

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

DATA SHEET. 2PC945 NPN general purpose transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 May 28.

DATA SHEET. 2N5401 PNP high-voltage transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 08.

DATA SHEET. PEMZ1 NPN/PNP general purpose transistors DISCRETE SEMICONDUCTORS Nov 07. Product specification Supersedes data of 2001 Sep 25

DISCRETE SEMICONDUCTORS DATA SHEET M3D319. BAS521 High voltage switching diode. Product specification 2003 Aug 12

NE/SA5090 Addressable relay driver INTEGRATED CIRCUITS. Product data Supersedes data of 1994 Aug 31 File under Integrated Circuits; IC11 Data Handbook

DATA SHEET. BSR62 PNP Darlington transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr Nov 11.

DISCRETE SEMICONDUCTORS DATA SHEET M3D319. BAP70-02 Silicon PIN diode. Product specification Supersedes data of 2002 Jul 02.

DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW. PBSS3540M 40 V, 0.5 A PNP low V CEsat (BISS) transistor. Product specification 2003 Aug 12

CBTS3253 Dual 1-of-4 FET multiplexer/demultiplexer with Schottky diode clamping

DATA SHEET. BF450 PNP medium frequency transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Jul 11.

DATA SHEET. BC847BPN NPN/PNP general purpose transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 26.

DATA SHEET. BAV23S General purpose double diode DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 May 05.

DATA SHEET. BAV70 High-speed double diode DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Oct Apr 03.

DISCRETE SEMICONDUCTORS DATA SHEET. PMBT2222; PMBT2222A NPN switching transistors. Product specification Supersedes data of 1999 Apr 27.

INTEGRATED CIRCUITS. PCA channel I 2 C hub. Product data Supersedes data of 2000 Dec 04 File under Integrated Circuits ICL03.

DATA SHEET. BF324 PNP medium frequency transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Jul 07.

INTEGRATED CIRCUITS. HSTL bit to 18-bit HSTL-to-LVTTL memory address latch. Product data 2001 Jun 16

DISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage M3D088. BB200 Low-voltage variable capacitance double diode. Product specification 2001 Oct 12

DISCRETE SEMICONDUCTORS DATA SHEET M3D319. BB145C Low-voltage variable capacitance diode. Preliminary specification 2001 Dec 11

DATA SHEET. PBSS4140V 40 V low V CEsat NPN transistor DISCRETE SEMICONDUCTORS Jun 20. Product specification Supersedes data of 2001 Nov 05

DATA SHEET. BC556; BC557 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 15.

DATA SHEET. BC868 NPN medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Data supersedes data of 1999 Apr 08

DATA SHEET. PBSS4160T 60 V, 1 A NPN low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Jun 24

DATA SHEET. BAS216 High-speed switching diode DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 22.

Planar PIN diode in a SOD882 leadless ultra small SMD plastic package. Pin Description Simplified outline Symbol 1 cathode

2N Product profile. 2. Pinning information. N-channel TrenchMOS FET. 1.1 General description. 1.2 Features. 1.

DISCRETE SEMICONDUCTORS DATA SHEET

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

DISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage M3D302. PBSS4140DPN 40 V low V CEsat NPN/PNP transistor. Product specification 2001 Dec 13

DATA SHEET. PUMF12 PNP general purpose transistor; NPN resistor-equipped transistor DISCRETE SEMICONDUCTORS. Product specification 2002 Nov 07

DATA SHEET. PUMZ1 NPN/PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2002 May 6.

DISCRETE SEMICONDUCTORS DATA SHEET. BAS321 General purpose diode. Product specification Supersedes data of 1999 Feb 09.

DATA SHEET. PBSS5350T 50 V, 3 A PNP low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2002 Aug 08

DISCRETE SEMICONDUCTORS DATA SHEET M3D319. BAS716 Low-leakage diode. Product specification 2003 Nov 07

2N Product profile. 2. Pinning information. N-channel TrenchMOS FET. 1.1 General description. 1.2 Features. 1.

DATA SHEET. BAV74 High-speed double diode DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 May Jan 14.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

INTEGRATED CIRCUITS SSTV16857

DATA SHEET. BGA2771 MMIC wideband amplifier DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Oct Aug 06.

DATA SHEET. BGA2776 MMIC wideband amplifier DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Oct Aug 06.

NXP 74AVC16835A Register datasheet

PEMB18; PUMB18. PNP/PNP resistor-equipped transistors; R1 = 4.7 kω, R2 = 10 kω. Type number Package NPN/PNP NPN/NPN complement complement

DATA SHEET. 74LVT V 32-bit edge-triggered D-type flip-flop; 3-state INTEGRATED CIRCUITS. Product specification Supersedes data of 2002 Mar 20

INTEGRATED CIRCUITS. 74F00 Quad 2-input NAND gate. Product specification Oct 04. IC15 Data Handbook

PEMH17; PUMH17. NPN/NPN resistor-equipped transistors; R1 = 47 kω, R2 = 22 kω. NPN/NPN Resistor-Equipped Transistors (RET).

74F38 Quad 2-input NAND buffer (open collector)

DISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage M3D302. BZA418A Quadruple ESD transient voltage suppressor. Product specification 2002 Sep 02

NPN 5 GHz wideband transistor. The transistor is encapsulated in a 3-pin plastic SOT23 envelope.

DISCRETE SEMICONDUCTORS DATA SHEET M3D743. BZA900A-series Quadruple ESD transient voltage suppressor. Product specification 2001 Sep 03

INTEGRATED CIRCUITS. 74F14 Hex inverter Schmitt trigger. Product specification Nov 26. IC15 Data Handbook

DISCRETE SEMICONDUCTORS DATA SHEET. 1PS76SB10 Schottky barrier diode. Product specification Supersedes data of 1996 Oct 14.

INTEGRATED CIRCUITS. 74F175A Quad D flip-flop. Product specification Supersedes data of 1996 Mar 12 IC15 Data Handbook.

PMBFJ111; PMBFJ112; PMBFJ113

DISCRETE SEMICONDUCTORS DATA SHEET M3D319. PMEG3002AEB Low V F MEGA Schottky barrier diode. Product specification 2002 May 06

PEMD16; PUMD16. NPN/PNP resistor-equipped transistors; R1 = 22 kω, R2 = 47 kω. Type number Package PNP/PNP NPN/NPN complement complement

PDTD113E series. NPN 500 ma, 50 V resistor-equipped transistors; R1 = 1 kω, R2 = 1 kω. 500 ma NPN Resistor-Equipped Transistors (RET) family.

DATA SHEET. BZA800AL series Quadruple ESD transient voltage suppressor DISCRETE SEMICONDUCTORS. Product specification 2002 Jan 11.

DISCRETE SEMICONDUCTORS DATA SHEET M3D176. 1N914; 1N914A; 1N914B High-speed diodes. Product specification Supersedes data of 1999 May 26.

INTEGRATED CIRCUITS. 74LVC00A Quad 2-input NAND gate. Product specification Supersedes data of 1997 Aug 11 IC24 Data Handbook.

DATA SHEET. 74LVCH32244A 32-bit buffer/line driver; 5 V input/output tolerant; 3-state INTEGRATED CIRCUITS

PMLL4148L; PMLL4448. High-speed switching diodes. Type number Package Configuration. PMLL4148L SOD80C - single diode PMLL4448 SOD80C - single diode

PESDxV4UG series. 1. Product profile. Very low capacitance quadruple ESD protection diode arrays in SOT353 package. 1.1 General description

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

74F3038 Quad 2-input NAND 30 Ω line driver (open collector)

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

DATA SHEET. PDZ-B series Voltage regulator diodes DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1998 Apr 23.

PESD1LIN. 1. Product profile. LIN bus ESD protection diode in SOD General description. 1.2 Features. 1.3 Applications. Quick reference data

SSTV V 13-bit to 26-bit SSTL_2 registered buffer for stacked DDR DIMM

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

DISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage MBD128. BGA2709 MMIC wideband amplifier. Preliminary specification 2002 Jan 31

74F175*, 74F175A Quad D flip-flop INTEGRATED CIRCUITS. Product specification Mar 12. IC15 Data Handbook

DISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage M3D109. BGA6489 MMIC wideband medium power amplifier. Product specification 2003 Sep 18

SSTVN bit 1:2 SSTL_2 registered buffer for DDR

DATA SHEET. PESDxS2UQ series Double ESD protection diodes in SOT663 package DISCRETE SEMICONDUCTORS Apr 27

LINEAR PRODUCTS. NE592 Video amplifier. Product specification April 15, Philips Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET M3D176. BZX79 series Voltage regulator diodes. Product specification Supersedes data of 1999 May 25.

DISCRETE SEMICONDUCTORS DATA SHEET. PMBT2369 NPN switching transistor. Product specification Supersedes data of 1999 Apr 27.

74ABT2244 Octal buffer/line driver with 30Ω series termination resistors (3-State)

SA620 Low voltage LNA, mixer and VCO 1GHz

DATA SHEET. TDA1517; TDA1517P 2 6 W stereo power amplifier INTEGRATED CIRCUITS

SA601 Low voltage LNA and mixer 1 GHz

INTEGRATED CIRCUITS. 74ALS10A Triple 3-Input NAND gate. Product specification 1991 Feb 08 IC05 Data Handbook

Transcription:

INTEGRATED CIRCUITS Supersedes data of 1994 Aug 31 File under Integrated Circuits, IC11 Handbook 21 Aug 3

DESCRIPTION The series are precision high-speed dual comparators fabricated on a single monolithic chip. They are designed to operate over a wide range of supply voltages down to a single 5 V logic supply and ground. Further, they have higher gain and lower input currents than devices like the µa71. The uncommitted collector of the output stage makes the compatible with RTL, DTL, and TTL as well as capable of driving lamps and relays at currents up to 25 ma. Although designed primarily for applications requiring operation from digital logic supplies, the series are fully specified for power supplies up to ±15 V. It features faster response than the LM111 at the expense of higher power dissipation. However, the high-speed, wide operating voltage range and low package count make the much more versatile than older devices like the µa711. PIN CONFIGURATION D, N Packages NC NC GND 1 INPUT 1 INPUT 1 V OUTPUT 2 1 2 3 4 5 6 7 14 13 12 11 1 9 8 NC NC OUTPUT 1 V INPUT 2 INPUT 2 GND 2 FEATURES Two independent comparators Operates from a single 5 V supply Typically 8 ns response time at ±15 V Minimum fanout of 3 (each side) Maximum input current of 1 µa over temperature Inputs and outputs can be isolated from system ground High common-mode slew rate TOP VIEW SL114 Figure 1. Pin Configuration EQUIVALENT SCHEMATIC R2 4K R3 4K R1 3.5K R6 3K R7 3K Q9 V Q4 Q8 INPUTS Q1 Q2 R4 3K Q3 R5 3K Q6 Q7 C1 18pF R1 17 R11 13K R12 13K R8 2K Q5 Q15 Q22 Q21 R23 4K Q2 R22 6 R2 3.6K R9 18K R18 1.9K R19 25 Q11 R13 6 Q1 R14 2K Q12 Q13 C14 R15 3 R16 6 Q16 OUTPUT R25 6 TO OTHER HALF R24 25 Q19 R2 9 Q18 Q12 R17 3 V GND SL115 Figure 2. Equivalent Schematic 21 Aug 3 2 853-928 26835

ORDERING INFORMATION DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG # 14-Pin Plastic Small Outline (SO) Package 25 C to 85 C LM219D SOT18-1 14-Pin Plastic Small Outline (SO) Package C to 7 C D SOT18-1 14-Pin Plastic Dual In-Line Package (DIP) C to 7 C N SOT27-1 ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER RATING UNIT V S Total supply voltage 36 V Output to negative supply voltage 36 V Ground to negative supply voltage 25 V Ground to positive supply voltage 18 V Differential input voltage ±5 V V IN Input voltage 1 ±15 V Maximum power dissipation, T amb = 25 C (still-air) 2 N package 142 mw D package 14 mw Output short-circuit duration 1 s T amb Operating temperature range LM219-25 to 85 to 7 T stg Storage temperature range -65 to 15 C T sld Lead soldering temperature (1 sec max) 23 C NOTES: 1. For supply voltages less than ±15 V, the absolute maximum rating is equal to the supply voltage. 2. Derate above 25 C, at the following rates: N package at 11.4 mw/ C D package at 8.3 mw/ C DC ELECTRICAL CHARACTERISTICS V S = ±15 V; 25 C T amb 85 C for LM219, C T amb 7 C for, unless otherwise specified. SYMBOL PARAMETER TEST CONDITIONS LM219 Min Typ Max Min Typ Max Input 1, 2 R S 5 kω; T amb = 25 C.7 4. 2. 8. V OS offset voltage Over temp. 7 1 Input 1, 2 T amb = 25 C 3 75 8 2 I OS offset current Over temp. 1 3 I B Input bias current 1 T amb = 25 C 15 5 25 1 na Over temp. 1 12 na A V Voltage gain T amb = 25 C 8 4 8 4 V/mV V OL Saturation voltage V IN 1 mv; I OUT = 25 ma; T amb = 25 C; V 4.5 V; V = V.75 1.5.75 1.5 V IN 1 mv; I OUT = 3.2 ma.3.6.3.4 I OH Output leakage current V = V; V IN 1 mv V OUT = 35 V; T amb = 25 C.2 1.2 1 µa V IN Input voltage range V S = ±15 V ±13 ±13 V = 5V, V = V 1 3 1 3 V ID Differential input voltage ±5 ±5 V I Positive supply current V=5V; V = V; T amb = 25 C 4.3 4.3 ma I Positive supply current V S = ±15 V; T amb = 25 C 8. 12.5 8. 12.5 ma I Negative supply current V S = ±15 V; T amb = 25 C 3. 5. 3. 5. ma NOTES: 1. V OS, I OS and I B specifications apply for a supply voltage range of V S = ±15 V down to a single 5 V supply. 2. The offset voltages and offset currents given are the maximum values required to drive the output to within 1 V of either supply with a 1 ma load. Thus these parameters define an error band and take into account the worst case effects of voltage gain and input impedance. C UNIT mv na V V 21 Aug 3 3

AC ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER TEST CONDITIONS t R Response time 1 V S = ±15 V; T amb = 25 C R L = 5 Ω (see test figure) NOTE: 1. The response time specified is for a 1 mv step with 5 mv overdrive. LIMITS Min Typ Max UNIT 8 ns TEST CIRCUIT 15V 5V R L PULSE GENERATOR D.U.T. V OUT 15V Response Time Measurement Figure 3. Test Circuit SL116 21 Aug 3 4

TYPICAL PERFORMANCE CHARACTERISTICS OUTPUT VOLTAGE HIGH V 4 35 3 25 2 15 1 5 Transfer Function V S = 15V R L = 1.4KΩ V = 36V V = 5.V 8. 7. 6. 5. 4. 3. 2. 1. OUTPUT VOLTAGE LOW V OUTPUT VOLTAGE V INPUT VOLTAGE mv 6. 5. 4. 3. 2. 1. -5-1 Response Time for Various Input Overdrives V S = 5.V R L = 5KΩ V = 5.V 2mV 5.mV 2.mV OUTPUT VOLTAGE V INPUT VOLTAGE mv 6. 5. 4. 3. 2. 1. 1 5 Response Time for Various Input Overdrives 2mV 2.mV 5.mV V S = 15V R L = 5KΩ V = 5.V -1. -.6 -.2.2.6 1. 5 1 15 2 25 3 35 5 1 15 2 25 3 35 DIFFERENTIAL INPUT VOLTAGE V TIME ns TIME ns INPUT BIAS CURRENT na 4 3 2 1-1 Input Characteristics V S = 15V MAXIMUM DIFFERENTIAL INPUT VOLTAGE OUTPUT VOLTAGE V INPUT VOLTAGE mv 6. 5. 4. 3. 2. 1. -5-1 Response Time for Various Input Overdrives 2mV V S = 15V R L = 5KΩ V = 5.V 5.mV 2.mV OUTPUT VOLTAGE V INPUT VOLTAGE mv 6. 5. 4. 3. 2. 1. 1 5 Response Time for Various Input Overdrives 2mV 2.mV 5.mV V S = 5.V R L = 5KΩ V = 5.V -1-6. -2. 2. 6. 1 5 1 15 2 25 3 35 5 1 15 2 25 3 35 DIFFERENTIAL INPUT VOLTAGE V TIME ns TIME ns OUTPUT CURRENT ma 25 2 15 1 5 Output Saturation Voltage V S = 15V INPUT OVERDRIVE = 5.mV.2.4.6.8 1. SUPPLY CURRENT ma 12 1 8 6 4 2 Supply Current POSITIVE SUPPLY NEGATIVE SUPPLY 5 1 15 2 SHORT CIRCUIT CURRENT ma 12 1 8 6 4 2 Output Limitiung Characteristics SHORT CIRCUIT CURRENT POWER DISSIPATION 5 1 15 1.2 1..8.6.4.2 POWER DISSIPATION W OUTPUT VOLTAGE V SUPPLY VOLTAGE V OUTPUT VOLTAGE V SL117 Figure 4. Typical Performance Characteristics 21 Aug 3 5

TYPICAL PERFORMANCE CHARACTERISTICS (Continued) INPUT CURRENT na Input Currents 25 V S = 15V 2 BIAS 15 1 5 OFFSET -55-15 5 45 85 125 COMMON MODE LIMITS V V -.4 -.8-1.2-1.6-2. 1.2.8.4 V - Common-Mode Limits V S = 5.V, V S - = V S = 15V REFERRED TO SUPPLY VOLTAGES V S = 15V, V S = 5.V, V - = -55-15 5 45 85 125 SUPPLY CURRENT ma 12 1 8 6 4 2 Supply Current POSITIVE SUPPLY, V S = 15V POSITIVE SUPPLY, V S = 5.V, V S - = NEGATIVE SUPPLY, V S = 15V -55-15 5 45 85 125 TEMPERATURE o C TEMPERATURE o C TEMPERATURE o C SL118 Figure 5. Typical Performance Characteristics TYPICAL APPLICATIONS 5V 28V 19 Ω INPUTS 1 / 2-3V 1N914 2.7k 1N914 1k Relay Driver 5V 7.5M 5V 3k 5 V UT V IN 1 / 2-5 TTL 1.2V 1 / 2-1N914 2N2222 SQUARE WAVE OUTPUT 1kHz to 1MHz TRIANGLE WAVE OUTPUT V LT 1 / 2-1 / 2-5pF 3k 1k 1N914 Window Detector NOTES: V OUT = 5V for V LT < V IN < V UT V OUT = V for V IN < V LT or V IN > V UT NOTE: -5V Frequency adjust must be buffered for R L < 1Ω Wide Range Variable Oscillator Figure 6. Typical Applications SL119 21 Aug 3 6

SO14: plastic small outline package; 14 leads; body width 3.9 mm SOT18-1 21 Aug 3 7

DIP14: plastic dual in-line package; 14 leads (3 mil) SOT27-1 21 Aug 3 8

NOTES 21 Aug 3 9

Data sheet status Data sheet status [1] Product status [2] Definitions Objective data Preliminary data Development Qualification This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Production Definitions Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 6134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Disclaimers Life support These products are not designed for use in life support appliances, devices or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: 31 4 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-65A. [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. Koninklijke Philips Electronics N.V. 21 All rights reserved. Printed in U.S.A. Date of release: 12-1 Document order number: 9397 75 9221 21 Aug 3 1

This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.