VS-2ETS6PbF, VS-2ETS6-M3 High Voltage, Input Rectifier Diode, 2 2 TO-22C 3 Base cathode 2 3 Cathode node FETURES Very low forward voltage drop 5 C max. operating junction temperature Glass passivated pellet chip junction Designed and qualified according to JEDEC -JESD 47 Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 vailable PRODUCT SUMMRY Package TO-22C I F(V) 2 V R 6 V V F at I F. V I FSM 3 T J max. 5 C Diode variation Single die PPLICTIONS Input rectification switches and output rectifiers which are available in identical package outlines DESCRIPTION High voltage rectifiers optimized for very low forward voltage drop with moderate leakage. These devices are intended for use in main rectification (single or three phase bridge). OUTPUT CURRENT IN TYPICL PPLICTIONS PPLICTIONS SINGLE-PHSE BRIDGE THREE-PHSE BRIDGE UNITS Capacitive input filter T = 55 C, T J = 25 C common heatsink of C/W 6.3 2 MJOR RTINGS ND CHRCTERISTICS SYMBOL CHRCTERISTICS VLUES UNITS I F(V) Sinusoidal waveform 2 V RRM 6 V I FSM 3 V F, T J = 25 C. V T J -4 to +5 C VOLTGE RTINGS PRT NUMBER VS-2ETS6PbF VS-2ETS6-M3 V RRM, MXIMUM PEK REVERSE VOLTGE V V RSM, MXIMUM NON-REPETITIVE PEK REVERSE VOLTGE V I RRM T 5 C m 6 7 Revision: -Feb-6 Document Number: 9345 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?9
VS-2ETS6PbF, VS-2ETS6-M3 BSOLUTE MXIMUM RTINGS PRMETER SYMBOL TEST CONDITIONS VLUES UNITS Maximum average forward current I F(V) T C = 5 C, 8 conduction half sine wave 2 Maximum peak one cycle ms sine pulse, rated V RRM applied 25 I FSM non-repetitive surge current ms sine pulse, no voltage reapplied 3 ms sine pulse, rated V RRM applied 36 Maximum I 2 t for fusing I 2 t ms sine pulse, no voltage reapplied 442 2 s Maximum I 2 t for fusing I 2 t t =. ms to ms, no voltage reapplied 442 2 s ELECTRICL SPECIFICTIONS PRMETER SYMBOL TEST CONDITIONS VLUES UNITS Maximum forward voltage drop V FM 2, T J = 25 C. V Forward slope resistance r t.4 m T J = 5 C Threshold voltage V F(TO).85 V T J = 25 C. Maximum reverse leakage current I RM V R = Rated V RRM T J = 5 C. m THERML - MECHNICL SPECIFICTIONS PRMETER SYMBOL TEST CONDITIONS VLUES UNITS Maximum junction and storage temperature range T J, T Stg -4 to +5 C Maximum thermal resistance, junction to case R thjc DC operation.3 Typical thermal resistance, case to heatsink R thcs Mounting surface, smooth, and greased.5 C/W pproximate weight 2 g.7 oz. minimum 6 (5) kgf cm Mounting torque maximum 2 () (lbf in) Marking device Case style TO-22C 2ETS6 Maximum llowable Case Temperature ( C) 5 4 3 2 9 R thjc (DC) =.3 C/W 3 Conduction angle 6 9 2 8 2 4 6 8 2 4 6 8 2 22 Maximum llowable Case Temperature ( C) 5 4 3 2 9 3 R thjc (DC) =.3 C/W 6 9 2 8 Conduction period DC 5 5 2 25 3 35 verage Forward Current () verage Forward Current () Fig. - Current Rating Characteristics Fig. 2 - Current Rating Characteristics Revision: -Feb-6 2 Document Number: 9345 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?9
VS-2ETS6PbF, VS-2ETS6-M3 Maxiumum verage Forward Power Loss (W) 3 25 2 5 5 8 2 9 6 3 RMS limit Conduction angle T J = 5 C Peak Half Sine Wave Forward Current () 3 25 2 5 t any rated load condition and with rated V RRM applied following surge. Initial T J = 5 C at 6 Hz.83 s at 5 Hz. s 4 8 2 6 2 24 verage Forward Current () Fig. 3 - Forward Power Loss Characteristics 5 Number of Equal mplitude Half Cycle Current Pulse (N) Fig. 5 - Maximum Non-Repetitive Surge Current Maxiumum verage Forward Power Loss (W) 35 3 25 2 5 5 DC 8 2 9 6 3 T J = 5 C RMS limit Conduction period 5 5 2 25 Peak Half Sine Wave Forward Current () 3 25 2 5 5 Maximum non-repetitive surge current versus pulse train duration. Initial T J = 5 C No voltage reapplied Rated V RRM reapplied.. verage Forward Current () Pulse Train Duration (s) Fig. 4 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous Forward Current () T J = 25 C T J = 5 C.5..5 2. 2.5 3. 3.5 4. Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics Revision: -Feb-6 3 Document Number: 9345 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?9
VS-2ETS6PbF, VS-2ETS6-M3 Z thjc - Transient Thermal Impedance ( C/W). Single pulse D =.5 D =.33 D =.25 D =.7 D =.8 Steady state value (DC operation)..... Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance Z thjc Characteristics ORDERING INFORMTION TBLE Device code VS- 2 E T S 6 PbF 2 3 4 5 6 7 - product 2 - Current rating (2 = 2 ) 3 - Circuit configuration: E = TO-22C 4 - Package: T = TO-22 5 - Type of silicon: S = standard recovery rectifier 6 - Voltage rating (6 = 6 V) 7 - Environmental digit: PbF = lead (Pb)-free and RoHS-compliant -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMTION (Example) PREFERRED P/N QUNTITY PER T/R MINIMUM ORDER QUNTITY PCKGING DESCRIPTION VS-4ETS8PbF 25 5 ntistatic plastic tubes VS-4ETS8-M3 25 5 ntistatic plastic tubes VS-4ETS2PbF 25 5 ntistatic plastic tubes VS-4ETS2-M3 25 5 ntistatic plastic tubes Dimensions Part marking information LINKS TO RELTED DOCUMENTS TO-22C modified PbF TO-22C modified -M3 www.vishay.com/doc?95253 www.vishay.com/doc?95255 www.vishay.com/doc?95442 Revision: -Feb-6 4 Document Number: 9345 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?9
Outline Dimensions TO-22C DIMENSIONS in millimeters and inches (6) E E2 (7) P.4 M B M B Seating plane E Thermal pad 2 3 D D C C L (6) D Q D Detail B (6) H (7) H θ D2 (6) 2 x b2 2 x b Detail B L3 L4 3 2 L C E (6) Lead assignments Diodes + 2 - Cathode 3 - node Lead tip e.5 M B M c 2 View - Conforms to JEDEC outline TO-22C SYMBOL MILLIMETERS INCHES MILLIMETERS INCHES NOTES SYMBOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES 4.25 4.65.67.83 E 6.86 8.89.27.35 6.4.4.45.55 E2 -.76 -.3 7 2 2.56 2.92..5 e 2.4 2.67.95.5 b.69..27.4 e 4.88 5.28.92.28 b.38.97.5.38 4 H 6.9 6.48.24.255 6, 7 b2.2.73.47.68 L 3.52 4.2.532.552 b3.4.73.45.68 4 L 3.32 3.82.3.5 2 c.36.6.4.24 L3.78 2.3.7.84 c.36.56.4.22 4 L4.76.27.3.5 2 D 4.85 5.25.585.6 3 P 3.54 3.73.39.47 D 8.38 9.2.33.355 Q 2.6 3..2.8 D2.68 2.88.46.57 6 9 to 93 9 to 93 E..5.398.44 3, 6 Notes () Dimensioning and tolerancing as per SME Y4.5M-994 (2) Lead dimension and finish uncontrolled in L (3) Dimension D, D and E do not include mold flash. Mold flash shall not exceed.27 mm (.5") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b, b3 and c apply to base metal only (5) Controlling dimension: inches (6) Thermal pad contour optional within dimensions E, H, D2 and E (7) Dimension E2 x H define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC TO-22, D2 (minimum) where dimensions are derived from the actual package outline Document Number: 9522 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 7-Mar- Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com
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