UNISONIC TECHNOLOGIES CO., LTD 4 Amps, 3 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UT4N3 power MOSFET provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness FEATURES * R DS(ON) = 7mΩ @V GS = V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain.Gate 3.Source ORDERING INFORMATION Ordering Number Pin Assignment Package Lead Free Halogen Free 2 3 Packing UT4N3L-TN3-R UT4N3G-TN3-R G D S Tape Reel UT4N3L-TM3-T UT4N3G-TM3-T TO-25 G D S Tube of 5 Copyright 2 Unisonic Technologies Co., Ltd
ABSOLUTE MAXIMUM RATINGS (T J =25 C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 3 V Gate-Source Voltage V GSS ±2 V Continuous Drain Current I D 4 A Pulsed Drain Current (Note ) I DM 69 A Total Power Dissipation TO-25 5 W P D 5 W Junction Temperature T J +5 C Storage Temperature T STG -55 ~ +5 C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA Junction to Ambient Junction to Case PARAMETER SYMBOL RATINGS UNIT TO-25 62 /W θ JA 62 /W TO-25 2.5 /W θ JC 2.5 /W ELECTRICAL CHARACTERISTICS (T A =25 C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS = V, I D =25 µa 3 V Drain-Source Leakage Current I DSS V DS =3 V, V GS = V, T J =25 µa Gate- Source Leakage Current I GSS V GS = ±2V ± na ON CHARACTERISTICS Gate-Threshold Voltage V GS(TH) V DS =V GS, I D =25 µa 3 V Drain-Source On-State Resistance R DS(ON) V GS = V, I D =2 A 4 7 V GS =4.5 V, I D =6 A 2 23 mω DYNAMIC PARAMETERS Input Capacitance C ISS 8 Reverse Transfer Capacitance C RSS 33 Output Capacitance C OSS V DS =25 V, V GS =V, f=.mhz 38 pf SWITCHING PARAMETERS Turn-ON Delay Time t D(ON) 7.2 Turn-ON Rise Time t R V DS =5 V, I D =2 A, V GS =V, 6 Turn-OFF Delay Time t D(OFF) R G =3.3 Ω, R L =.75 Ω 22.5 ns Turn-OFF Fall-Time t F Total Gate Charge Q G 7 Gate-Source Charge Q GS V DS =24V,V GS =5 V,I D =2 A 3 nc Gate-Drain Charge Q GD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage V SD T J =25, I S =4A, V GS =V.3 V Maximum Continuous Drain-Source Diode Forward Current I S V D =V G =V, V S =.3V 4 Maximum Pulsed Drain-Source Diode Forward Current I SM 69 A Notes:. Pulse width limited by T J(MAX) 2. Pulse width 3us, duty cycle 2%. UNISONIC TECHNOLOGIES CO., LTD 2 of 5
TYPICAL CHARACTERISTICS 5 5 Typical Output Characteristics Typical Output Characteristics 5 T C =25 V G =V T C =5 V G =V V G =8.V V G =8.V V G =6.V V G =4.V 5 V G =6.V V G =4.V V G =3.V V G =3.V 2 3 4 5 6 7 8 9 2 3 4 5 6 7 8 9 Drain-to-Source Voltage,V DS (V) Drain-to-Source Voltage,V DS (V) 28 26 24 22 2 8 6 4 On-Resistance vs. Gate Voltage I D =2A T C =25 2 3 4 5 6 7 8 9 Gate-to-Source Voltage,V GS (V) Normalized On-Resistance,RDS(ON).8.6.4.2.8 Normalized On-Resistance vs. Junction Temperature I D =2A V G =V.6-5 5 5 Junction Temperature,T J ( ) Power,PD (W) On-Resistance,RDS(ON) (mω) UNISONIC TECHNOLOGIES CO., LTD 3 of 5
TYPICAL CHARACTERISTICS(Cont.) Forward Characteristics of Reverse Diode 3 Gate Threshold Voltage vs. Junction Temperature Reverse Drain Current,IS (A). T J =5 T J =25...3.5.7.9..3.5 Body Diode Forward Voltage,V SD (V) Gate Threshold Voltage,VGS(TH) (V) 2-5 5 Junction Temperature,T J ( ) 5 Normalized Thermal Response,RthJC Gate to Source Voltage,VGS (V) Capacitance,C (pf) UNISONIC TECHNOLOGIES CO., LTD 4 of 5
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD 5 of 5