STH275N8F7-2AG, STH275N8F7-6AG

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Transcription:

STH275N8F7-2AG, STH275N8F7-6AG Automotive-grade N-channel 80 V, 1.7 mω typ., 180 A, STripFET F7 Power MOSFETs in H²PAK-2 and H²PAK-6 Datasheet - production data Features Order code VDS RDS(on) max. ID STH275N8F7-2AG STH275N8F7-6AG 80 V 2.1 mω 180 A AEC-Q101 qualified Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Figure 1: Internal schematic diagram Applications Switching applications Description These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packing STH275N8F7-2AG H²PAK-2 275N8F7 Tape and reel STH275N8F7-6AG H²PAK-6 January 2017 DocID027223 Rev 4 1/18 This is information on a product in full production. www.st.com

Contents STH275N8F7-2AG, STH275N8F7-6AG Contents 1 Electrical ratings... 3 2 Electrical characteristics... 4 2.1 Electrical characteristics (curves)... 6 3 Test circuits... 8 4 Package information... 9 4.1 H²PAK-2 package information... 10 4.2 H²PAK-6 package information... 12 4.3 H²PAK packing information... 15 5 Revision history... 17 2/18 DocID027223 Rev 4

STH275N8F7-2AG, STH275N8F7-6AG Electrical ratings 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 80 V VGS Gate-source voltage ±20 V ID (1) Drain current (continuous) at TC = 25 C 180 A Drain current (continuous) at TC = 100 C 180 IDM (2) Drain current (pulsed) 720 A PTOT Total dissipation at TC = 25 C 315 W EAS (3) Single pulse avalanche energy 0.775 J Tstg Tj Storage temperature range -55 to 175 C Operating junction temperature range Notes: (1) Limited by package. (2) Pulse width is limited by safe operating area. (3) Starting Tj = 25 C, Id = 65 A, Vdd = 50 V, T j < T j-max. Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 0.48 Rthj-pcb (1) Thermal resistance junction-pcb 35 C/W Notes: (1) When mounted on FR-4 board of 1 inch2, 2oz Cu. DocID027223 Rev 4 3/18

Electrical characteristics STH275N8F7-2AG, STH275N8F7-6AG 2 Electrical characteristics (TCASE = 25 C unless otherwise specified) Table 4: On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS IDSS Drain-source breakdown voltage Zero gate voltage drain current VGS = 0 V, ID = 1 ma 80 V VGS = 0 V, VDS = 80 V 1 VGS = 0 V, VDS = 80 V, TC = 125 C (1) IGSS Gate-body leakage current VDS = 0 V, VGS = +20 V 100 na VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µa 2.5 4.5 V RDS(on) Notes: Static drain-source on-resistance (1) Defined by design, not subject to production test. 100 VGS = 10 V, ID = 90 A 1.7 2.1 mω µa Table 5: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance - 13600 - Coss Output capacitance VDS = 50 V, f = 1 MHz, - 2050 - VGS = 0 V Reverse transfer Crss - 236 - capacitance Qg Total gate charge VDD = 40 V, ID = 180 A, - 193 - Qgs Gate-source charge VGS = 10 V (see Figure 14: "Test circuit - 96 - Qgd Gate-drain charge for gate charge behavior") - 46 - pf nc Table 6: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 40 V, ID = 90 A - 56 - tr Rise time RG = 4.7 Ω, VGS = 10 V - 180 - td(off) Turn-off delay time (see Figure 18: "Switching - 98 - ns tf Fall time time waveform") - 42-4/18 DocID027223 Rev 4

STH275N8F7-2AG, STH275N8F7-6AG Table 7: Source-drain diode Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 180 A ISDM (1) Source-drain current (pulsed) - 720 A VSD (2) Forward on voltage VGS = 0 V, ISD = 90 A - 1.2 V trr Reverse recovery time - 78 ns Qrr Reverse recovery charge ISD = 180 A, di/dt = 100 A/µs, VDD = 64 V, Tj = 150 C - 182 nc IRRM Reverse recovery current - 4.7 A Notes: (1) Pulse width limited by safe operating area. (2) Pulsed: pulse duration = 300 µs, duty cycle 1.5 %. DocID027223 Rev 4 5/18

Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2: Safe operating area STH275N8F7-2AG, STH275N8F7-6AG Figure 3: Thermal impedance Figure 4: Gate charge vs gate-source voltage Figure 5: Output characteristics Figure 6: Transfer characteristics Figure 7: Normalized V(BR)DSS vs temperature 6/18 DocID027223 Rev 4

STH275N8F7-2AG, STH275N8F7-6AG Figure 8: Static drain-source on-resistance Electrical characteristics Figure 9: Capacitance variations Figure 10: Source-drain diode forward characteristics Figure 11: Normalized gate threshold voltage vs temperature Figure 12: Normalized on-resistance vs temperature DocID027223 Rev 4 7/18

Test circuits STH275N8F7-2AG, STH275N8F7-6AG 3 Test circuits Figure 13: Test circuit for resistive load switching times Figure 14: Test circuit for gate charge behavior Figure 15: Test circuit for inductive load switching and diode recovery times Figure 16: Unclamped inductive load test circuit Figure 17: Unclamped inductive waveform Figure 18: Switching time waveform 8/18 DocID027223 Rev 4

STH275N8F7-2AG, STH275N8F7-6AG Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. DocID027223 Rev 4 9/18

Package information STH275N8F7-2AG, STH275N8F7-6AG 4.1 H²PAK-2 package information Figure 19: H²PAK-2 package outline 10/18 DocID027223 Rev 4

STH275N8F7-2AG, STH275N8F7-6AG Package information Table 8: H²PAK-2 package mechanical data mm Dim. Min. Typ. Max. A 4.30 4.70 A1 0.03 0.20 C 1.17 1.37 e 4.98 5.18 E 0.50 0.90 F 0.78 0.85 H 10.00 10.40 H1 7.40 7.80 - L 15.30 15.80 L1 1.27 1.40 L2 4.93 5.23 L3 6.85 7.25 L4 1.5 1.7 M 2.6 2.9 R 0.20 0.60 V 0 8 Figure 20: H²PAK-2 recommended footprint DocID027223 Rev 4 11/18

Package information STH275N8F7-2AG, STH275N8F7-6AG 4.2 H²PAK-6 package information Figure 21: H²PAK-6 package outline 8159693_Rev_8 12/18 DocID027223 Rev 4

STH275N8F7-2AG, STH275N8F7-6AG Package information Table 9: H²PAK-6 package mechanical data mm Dim. Min. Typ. Max. A 4.30 4.70 A1 0.03 0.20 C 1.17 1.37 e 2.34 2.54 2.74 e1 4.88 5.28 e2 7.42 7.82 E 0.45 0.60 F 0.50 0.70 H 10.00 10.40 H1 7.40 7.80 L 14.75 15.25 L1 1.27 1.40 L2 4.35 4.95 L3 6.85 7.25 L4 1.50 1.75 M 1.90 2.50 R 0.20 0.60 V 0 8 DocID027223 Rev 4 13/18

Package information Figure 22: H²PAK-6 recommended footprint STH275N8F7-2AG, STH275N8F7-6AG footprint_rev_8 Dimensions are in mm. 14/18 DocID027223 Rev 4

STH275N8F7-2AG, STH275N8F7-6AG 4.3 H²PAK packing information Figure 23: Tape outline Package information Figure 24: Reel outline REE L DIMENS IONS T 40 mm min. Access hole At slot location B D C A N Full radius Tape slot In core for Tape start G measured At hub DocID027223 Rev 4 15/18

Package information STH275N8F7-2AG, STH275N8F7-6AG Table 10: Tape and reel mechanical data Tape Reel Dim. mm mm Dim. Min. Max. Min. Max. A0 10.5 10.7 A 330 B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 13.2 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 26.4 F 11.4 11.6 N 100 K0 4.8 5.0 T 30.4 P0 3.9 4.1 P1 11.9 12.1 Base quantity 1000 P2 1.9 2.1 Bulk quantity 1000 R 50 T 0.25 0.35 W 23.7 24.3 16/18 DocID027223 Rev 4

STH275N8F7-2AG, STH275N8F7-6AG Revision history 5 Revision history Table 11: Document revision history Date Revision Changes 27-Nov-2014 1 First release. 05-Mar-2015 2 Document status promoted from preliminary to production data. Updated title and feature in cover page. 10-Mar-2016 3 Updated Table 4. Minor text changes. 10-Jan-2017 4 Updated title and features in cover page. Updated Table 2: "Absolute maximum ratings", Table 4: "On/off states" and Table 6: "Switching times". Minor text changes. DocID027223 Rev 4 17/18

STH275N8F7-2AG, STH275N8F7-6AG IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 2017 STMicroelectronics All rights reserved 18/18 DocID027223 Rev 4