MOSFET OptiMOS ª 2SmallSignalTransistor,30V SOT3636 Features DualNchannel Enhancementmode Logiclevel(4.5Vrated) Avalancherated QualifiedaccordingtoAECQ101 100%leadfree;RoHScompliant HalogenfreeaccordingtoIEC61249221 Table1KeyPerformanceParameters Parameter Value Unit VDS 30 V RDS(on),max,VGS=4.5V 600 mω RDS(on),max,VGS=10V 400 mω ID 0.88 A source (1) pin 1 gate (1) pin 2 drain (2) pin 3 drain (1) pin 6 gate (2) pin 5 source (2) pin 4 Type/OrderingCode Package Marking RelatedLinks PGSOT363 XGs 1 Rev.2.0,20160623
OptiMOS ª 2SmallSignalTransistor,30V TableofContents Description............................................................................. 1 Maximum ratings........................................................................ 3 Thermal characteristics.................................................................... 3 Electrical characteristics................................................................... 3 Electrical characteristics diagrams........................................................... 5 Package Outlines........................................................................ 9 Revision History........................................................................ 10 Trademarks........................................................................... 10 Disclaimer............................................................................ 10 2 Rev.2.0,20160623
OptiMOS ª 2SmallSignalTransistor,30V 1Maximumratings atta=25 C,unlessotherwisespecified,onlyoneofbothtransistorsinoperation. Table2Maximumratings Parameter Symbol Unit Note/TestCondition Continuous drain current ID 0.88 0.71 A TA=25 C TA=70 C Pulsed drain current ID,pulse 3.5 A TA=25 C Avalanche energy, single pulse EAS 1.6 mj ID=0.88A,RGS=16Ω Reversediodedv/dt dv/dt 6 kv/µs ID=0.88A,VDS=16V,di/dt=200A/µs, Tj,max=150 C Gate source voltage VGS 20 20 V Power dissipation Ptot 0.5 W TA=25 C Operating and storage temperature Tj,Tstg 55 150 C ESD Class 0 Soldering Temperature 260 C IEC climatic category; DIN IEC 681: 55/150/56 JESD22A114 HBM, ESD Class 0 = < 250V 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Unit Note/TestCondition Thermal resistance, junction ambient, minimal footprint 1) RthJA 250 K/W 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 30 V VGS=0V,ID=250µA Gate threshold voltage VGS(th) 1.2 1.6 2.0 V VDS=0V,ID=1.6µA Drainsource leakage current IDSS 0.01 5 A VDS=30V,VGS=0V,Tj=25 C VDS=30V,VGS=0V,Tj=150 C Gatesource leakage current IGSS 10 na VGS=20V,VDS=0V Drainsource onstate resistance RDS(on) 447 286 600 400 mω VGS=4.5V,ID=0.29A VGS=10V,ID=0.88A Transconductance gfs 1.2 S VDS >2 ID RDS(on)max,ID=0.71A 1) Performed on 40 mm x 40 mm FR4 PCB. The traces are 1mm wide, 70m thick and 20mm long; they are present on both sides of the PCB 3 Rev.2.0,20160623
OptiMOS ª 2SmallSignalTransistor,30V Table5Dynamiccharacteristics 1) Parameter Symbol Unit Note/TestCondition Input capacitance Ciss 31 41 pf VGS=0V,VDS=15V,f=1MHz Output capacitance Coss 12 16 pf VGS=0V,VDS=15V,f=1MHz Reverse transfer capacitance Crss 2.4 3.6 pf VGS=0V,VDS=15V,f=1MHz Turnon delay time td(on) 2.6 ns Rise time tr 6.3 ns Turnoff delay time td(off) 4.6 ns Fall time tf 2.5 ns VDD=15V,VGS=10V,ID=0.88A, RG,ext=6Ω VDD=15V,VGS=10V,ID=0.88A, RG,ext=6Ω VDD=15V,VGS=10V,ID=0.88A, RG,ext=6Ω VDD=15V,VGS=10V,ID=0.88A, RG,ext=6Ω Table6Gatechargecharacteristics 1) Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs 0.11 0.15 nc VDD=15V,ID=0.88A,VGS=0to10V Gate to drain charge Qgd 0.08 0.1 nc VDD=15V,ID=0.88A,VGS=0to10V Gate charge total Qg 0.46 0.7 nc VDD=15V,ID=0.88A,VGS=0to10V Gate plateau voltage Vplateau 3.6 V VDD=15V,ID=0.88A,VGS=0to10V Table7Reversediode Parameter Symbol Unit Note/TestCondition Diode continous forward current IS 0.45 A TA=25 C Diode pulse current IS,pulse 3.5 A TA=25 C Diode forward voltage VSD 0.89 1.1 V VGS=0V,IF=0.88A,Tj=25 C Reverse recovery time 1) trr 7.8 ns VR=15V,IF=0.88A,diF/dt=100A/µs Reverse recovery charge 1) Qrr 1.9 nc VR=15V,IF=0.88A,diF/dt=100A/µs 1) Defined by design. Not subjected to production test. 4 Rev.2.0,20160623
OptiMOS ª 2SmallSignalTransistor,30V 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation 0.6 Diagram2:Draincurrent 1.0 0.5 0.8 0.4 0.6 Ptot[W] 0.3 0.4 0.2 0.1 0.2 0.0 0 40 80 120 TA[ C] Ptot=f(TA) 0.0 0 40 80 120 160 TA[ C] ID=f(TA);VGS 10V Diagram3:Safeoperatingarea 10 1 Diagram4:Max.transientthermalimpedance 10 3 1 µs 10 µs 10 0 10 1 DC 100 µs 1 ms 10 ms ZthJA[K/W] 10 2 0.5 0.2 0.1 0.05 0.01 10 2 10 1 single pulse 10 3 10 1 10 0 10 1 10 2 VDS[V] ID=f(VDS);TA=25 C;D=0;parameter:tp 10 0 10 5 10 4 10 3 10 2 10 1 10 0 10 1 10 2 tp[s] ZthJA=f(tp);parameter:D=tp/T 5 Rev.2.0,20160623
OptiMOS ª 2SmallSignalTransistor,30V Diagram5:Typ.outputcharacteristics 5 Diagram6:Typ.drainsourceonresistance 1200 10 V 6 V 1100 4 1000 900 3 2 5 V 4.5 V RDS(on)[mΩ] 800 700 600 500 3.5V 4 V 4.5 V 5 V 400 6 V 1 4V 3.5V 300 200 100 10 V 0 0 1 2 3 4 VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS 0 0 1 2 3 4 RDS(on)=f(ID);Tj=25 C;parameter:VGS Diagram7:Typ.transfercharacteristics 2.0 Diagram8:Typ.forwardtransconductance 2.5 1.6 2.0 1.2 1.5 gfs[s] 0.8 1.0 0.4 150 C 25 C 0.5 0.0 0 2 4 6 VGS[V] ID=f(VGS); VDS >2 ID RDS(on)max 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 gfs=f(id);tj=25 C 6 Rev.2.0,20160623
OptiMOS ª 2SmallSignalTransistor,30V Diagram9:Drainsourceonstateresistance 1000 Diagram10:Typ.gatethresholdvoltage 2.4 900 800 2.0 max 700 1.6 typ 600 RDS(on)[mΩ] 500 400 max VGS(th)[V] 1.2 min 300 200 100 typ 0.8 0.4 0 60 20 20 60 100 140 Tj[ C] RDS(on)=f(Tj);ID=0.88A;VGS=10V 0.0 60 20 20 60 100 140 Tj[ C] VGS(th)=f(Tj);VDS=VGS;ID=1.6µA;parameter:ID Diagram11:Typ.capacitances 10 2 Ciss Diagram12:Forwardcharacteristicsofreversediode 10 1 25 C 150 C 25 C, max 150 C, max 10 0 C[pF] 10 1 Coss IF[A] 10 1 Crss 10 2 10 0 0 10 20 30 VDS[V] C=f(VDS);VGS=0V;f=1MHz;Tj=25 C 10 3 0.0 0.4 0.8 1.2 1.6 VSD[V] IF=f(VSD);parameter:Tj 7 Rev.2.0,20160623
OptiMOS ª 2SmallSignalTransistor,30V Diagram13:Avalanchecharacteristics 10 1 Diagram14:Typ.gatecharge 10 9 8 15 V 6 V 24 V 10 0 7 IAV[A] 100 C 25 C VGS[V] 6 5 125 C 4 10 1 3 2 1 10 2 10 0 10 1 10 2 10 3 10 4 tav[µs] IAS=f(tAV);RGS=16Ω;parameter:Tj(start) 0 0.0 0.1 0.2 0.3 0.4 0.5 Qgate[nC] VGS=f(Qgate);ID=0.88Apulsed;parameter:VDD Diagram15:Drainsourcebreakdownvoltage 37 Gate charge waveforms 35 33 VBR(DSS)[V] 31 29 27 25 60 20 20 60 100 140 180 Tj[ C] VBR(DSS)=f(Tj);ID=250µA 8 Rev.2.0,20160623
OptiMOS ª 2SmallSignalTransistor,30V 5PackageOutlines Figure1OutlinePGSOT363,dimensionsinmm 9 Rev.2.0,20160623
OptiMOS ª 2SmallSignalTransistor,30V RevisionHistory Revision:20160623,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 20160623 Release of final version TrademarksofInfineonTechnologiesAG AURIX,C166,CanPAK,CIPOS,CoolGaN,CoolMOS,CoolSET,CoolSiC,CORECONTROL,CROSSAVE,DAVE,DIPOL,DrBlade, EasyPIM,EconoBRIDGE,EconoDUAL,EconoPACK,EconoPIM,EiceDRIVER,eupec,FCOS,HITFET,HybridPACK,Infineon, ISOFACE,IsoPACK,iWafer,MIPAQ,ModSTACK,myd,NovalithIC,OmniTune,OPTIGA,OptiMOS,ORIGA,POWERCODE, PRIMARION,PrimePACK,PrimeSTACK,PROFET,PROSIL,RASIC,REAL3,ReverSave,SatRIC,SIEGET,SIPMOS,SmartLEWIS, SOLIDFLASH,SPOC,TEMPFET,thinQ,TRENCHSTOP,TriCore. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany 2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnoninfringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlifesupportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlifesupport,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 10 Rev.2.0,20160623