General purpose transistor (dual transistors)

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General purpose transistor (dual transistors) EMZ1FHA / UMZ1N / UMZ1NFHA / IMZ1A / IMZ1AFRA EMZ1FHA / UMZ1NFHA EMZ1 / UMZ1N / IMZ1AFRA / AEC-Q1 Qualified Features 1) Both a SA37AKFRA chip and SC41KFRA chip in a EMT or UMT or SMT package. ) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. External dimensions (Unit : mm) EMZ1FHA.13 ROHM : EMT6 Abbreviated symbol : Z1 (4) (5) (3) () (6) (1) 1. 1.6 1. 1.6 Each lead has same dimensions Structure NPN / PNP epitaxial planar silicon transistor UMZ1NFHA (5) (4) (3) ().65 1.3. (6) 1.5 (1).65 Equivalent circuit EMZ1FHA / UMZ1N / UMZ1NFHA Tr (3) () (1) Tr1 (4) (5) (6) IMZ1A IMZ1AFRA Absolute maximum ratings (Ta = 5 C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power EMZ1FHA EMZ1, / UMZ1NFHA dissipation IMZ1AFRA Junction temperature Storage temperature 1 1mW per element must not be exceeded. mw per element must not be exceeded. Tr (4) (5) (6) Tr1 (3) () (1) Limits Symbol Unit Tr1 Tr CBO 6 6 CEO EBO 7 6 IC 1 1 ma 1 (TOTAL) 1 PC mw 3 (TOTAL) Tj 1 C Tstg 55 to +1 C Each lead has same dimensions ROHM : UMT6 EIAJ : SC-88 Abbreviated symbol : Z1 IMZ1AFRA.15.15.3 ROHM : SMT6 EIAJ : SC-74.1Min..3to.6 (6) (5) (4) to.1 1.6.8 to.1.1 (1) () (3).7.95.95.8.9 1.9.9 1.1 Each lead has same dimensions Abbreviated symbol : Z1 Rev.A 1/4

EMZ1FHA / UMZ1NFHA EMZ1 / UMZ1N / IMZ1AFRA / Electrical characteristics (Ta = 5 C) Tr1 (NPN) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BCBO 6 IC=µA Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency BCEO BEBO ICBO IEBO CE (sat) hfe ft 7 1 18.1.1.4 56 µa µa MHz IC=1mA IE=µA CB=6 EB=7 IC/IB=mA/5mA CE=6, IC=1mA CE=1, IE=mA, f=mhz Output capacitance Cob 3.5 PF CB=1, IE=A, f=1mhz Tr (PNP) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol Min. Typ. Max. Unit Conditions BCBO BCEO BEBO ICBO IEBO CE (sat) hfe 6 6 1.1.1 56 IC=µA IC=1mA IE=µA µa CB=6 µa EB=6 IC/IB=mA/5mA CE=6, IC=1mA ft 14 MHz CE=1, IE=mA, f=mhz Cob 4 5 PF CB=1, IE=A, f=1mhz Packaging specifications Package Taping Code TR TR T8 Basic ordering Type unit (pieces) 8 3 3 EMZ1FHA UMZ1NFHA IMZ1AFRA Electrical characteristic curves Tr1(NPN) 5 1.1 Ta= C 55 C CE=6.4.6.8 1. 1. 1.4 1.6 8 6 4.mA.45mA.4mA.35mA.3mA 5mA.mA.15mA.mA.5mA IB=A.4.8 1. 1.6. 8 6 4 3µA 7µA 4µA 1µA 18µA 15µA 1µA 9µA 6µA 3µA IB=A 4 8 1 16 BASE TO EMITTER OLTAGE : BE () COLLECTOR TO EMITTER OLTAGE : CE () COLLECTOR TO EMITTER OLTAGE : CE () Fig.1 Grounded emitter propagation characteristics Fig. Grounded emitter output characteristics ( I ) Fig.3 Grounded emitter output characteristics ( II ) Rev.A /4

EMZ1FHA / UMZ1NFHA EMZ1 / UMZ1N / IMZ1AFRA / DC CURRENT GAIN : hfe CE=5 3 1 1 5 DC CURRENT GAIN : hfe Ta= C CE=5 55 C 1 5.1.5..1 IC/IB= 1 5 Fig.4 DC current gain vs. collector current ( I ) Fig.5 DC current gain vs. collector current ( II ) Fig.6 Collector-emitter saturation voltage vs. collector current ( I ).1.5..1 Ta= C 55 C IC/IB= 1 5 Fig.7 Collector-emitter saturation voltage vs. collector current ( II ).1.5..1 Ta= C 55 C IC/IB= 1 5 Fig.8 Collector-emitter saturation voltage vs. collector current ( III ) TRANSITION FREQUENCY : ft (MHz) CE=6 1 5 EMITTER CURRENT : IE (ma) Fig.9 Gain bandwidth product vs. emitter current COLLECTOR OUTPUT CAPACITANCE : Cob (pf) EMITTER INPUT CAPACITANCE : Cib (pf) 5 1 Cib Cob f=1mhz IE=A IC=A 1 5 COLLECTOR TO BASE OLTAGE : CB () EMITTER TO BASE OLTAGE : EB () Fig. Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage BASE COLLECTOR TIME CONSTANT : Cc rbb' (ps) 1 5 EMITTER CURRENT : IE (ma) f=3mhz CB=6 Fig.11 Base-collector time constant vs. emitter current Rev.A 3/4

EMZ1FHA / UMZ1NFHA EMZ1 / UMZ1N / IMZ1AFRA / Tr (PNP) COLLECTOR CURRENT : Ic (ma) 5 1 Ta= C 4 C CE=6.1.4.6.8 1. 1. 1.4 1.6 BASE TO EMITTER OLTAGE : BE () Fig.1 Grounded emitter propagation characteristics 8 6 4.4 35. 31.5 8. 4.5 1. 17.5 14..5 7. 3.5µA IB=.8 1. 1.6. COLLECTOR TO EMITTER OLTAGE : CE () Fig.13 Grounded emitter output characteristics ( I ) 8 6 4 4 4 3 3 1 µa IB= 1 3 4 5 COLLECTOR TO EMITTER OLTAGE : CE () Fig.14 Grounded emitter output characteristics ( II ) DC CURRENT GAIN : hfe CE=5 3 1 1 5 DC CURRENT GAIN : hfe Ta= C 4 C CE=6 1 5 1 IC/IB=.1.5 1 5 Fig.15 DC current gain vs. collector current ( I ) Fig.16 DC current gain vs. collector current ( II ) Fig.17 Collector-emitter saturation voltage vs. collector current ( I ) 1.1.5 Ta= C 4 C lc/lb= 1 5 Fig.18 Collector-emitter saturation voltage vs. collector current ( II ) TRANSITION FREQUENCY : ft (MHz) 1 5 EMITTER CURRENT : IE (ma) CE=1 Fig.19 Gain bandwidth product vs. emitter current COLLECTOR OUTPUT CAPACITANCE : Cob (pf) EMITTER INPUT CAPACITANCE : Cib (pf) 5 Cib Cob f=1mhz IE=A IC=A - -1 - -5 - - COLLECTOR TO BASE OLTAGE : CB () EMITTER TO BASE OLTAGE : EB () Fig. Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Rev.A 4/4

Datasheet Notice Precaution on using ROHM Products 1. If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or serious damage to property ( Specific Applications ), please consult with the ROHM sales representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any ROHM s Products for Specific Applications. (Note1) Medical Equipment Classification of the Specific Applications JAPAN USA EU CHINA CLASSⅡb CLASSⅣ. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which a failure or malfunction of our Products may cause. The following are examples of safety measures: [a] Installation of protection circuits or other protective devices to improve system safety [b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure 3. Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the use of any ROHM s Products under any special or extraordinary environments or conditions. If you intend to use our Products under any special or extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of product performance, reliability, etc, prior to use, must be necessary: [a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents [b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust [c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl, HS, NH3, SO, and NO [d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves [e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items [f] Sealing or coating our Products with resin or other coating materials [g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning residue after soldering [h] Use of the Products in places subject to dew condensation 4. The Products are not subject to radiation-proof design. 5. Please verify and confirm characteristics of the final or mounted products in using the Products. 6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied, confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect product performance and reliability. 7. De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual ambient temperature. 8. Confirm that operation temperature is within the specified range described in the product specification. 9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in this document. Precaution for Mounting / Circuit board design 1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product performance and reliability.. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products, please consult with the ROHM representative in advance. For details, please refer to ROHM Mounting specification Notice-PAA-E 15 ROHM Co., Ltd. All rights reserved. Rev.1

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