STGW60H65DFB STGWT60H65DFB 650 V, 60 A high speed trench gate field-stop IGBT Datasheet - production data Features TAB Maximum junction temperature: T J = 175 C High speed switching series Minimized tail current 1 2 3 1 2 3 Very low saturation voltage: V CE(sat) = 1.6 V (typ.) @ I C = 60 A Tight parameters distribution Safe paralleling TO-247 TO-3P Low thermal resistance Very fast soft recovery antiparallel diode Lead free package Figure 1. Internal schematic diagram C (2, TAB) Applications Photovoltaic inverters High frequency converters G (1) E (3) Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the improved "H" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high frequency converters. Furthermore, a slightly positive V CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Table 1. Device summary Order code Marking Package Packaging STGW60H65DFB GW60H65DFB TO-247 Tube STGWT60H65DFB GWT60H65DFB TO-3P Tube August 2013 DocID024365 Rev 2 1/17 This is information on a product in full production. www.st.com 17
Contents STGW60H65DFB, STGWT60H65DFB Contents 1 Electrical ratings............................................ 3 2 Electrical characteristics..................................... 4 2.1 Electrical characteristics (curve)................................. 6 3 Test circuits.............................................. 11 4 Package mechanical data.................................... 12 5 Revision history........................................... 16 2/17 DocID024365 Rev 2
STGW60H65DFB, STGWT60H65DFB Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V CES Collector-emitter voltage (V GE = 0) 650 V I C Continuous collector current at T C = 25 C 80 (1) A I C Continuous collector current at T C = C 60 A I (2) CP Pulsed collector current 240 A V GE Gate-emitter voltage ±20 V I F Continuous forward current at T C = 25 C 80 (1) A I F Continuous forward current at T C = C 60 A (2) I FP Pulsed forward current 240 A P TOT Total dissipation at T C = 25 C 375 W T STG Storage temperature range - 55 to 150 C T J Operating junction temperature - 40 to 175 C 1. Current level is limited by bond wires. 2. Pulse width limited by maximum junction temperature. Table 3. Thermal data Symbol Parameter Value Unit R thjc Thermal resistance junction-case IGBT 0.4 C/W R thjc Thermal resistance junction-case diode 1.14 C/W R thja Thermal resistance junction-ambient 50 C/W DocID024365 Rev 2 3/17
Electrical characteristics STGW60H65DFB, STGWT60H65DFB 2 Electrical characteristics T J = 25 C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)CES Collector-emitter breakdown voltage (V GE = 0) I C = 2 ma 650 V V GE = 15 V, I C = 60 A 1.60 2.30 V CE(sat) V F Collector-emitter saturation voltage Forward on-voltage V GE = 15 V, I C = 60 A T J = 125 C V GE = 15 V, I C = 60 A T J = 175 C 1.75 1.85 I F = 60 A 2 2.6 V I F = 60 A T J = 125 C 1.7 V I F = 60 A T J = 175 C 1.6 V V GE(th) Gate threshold voltage V CE = V GE, I C = 1 ma 6.0 V Collector cut-off current I CES V (V GE = 0) CE = 650 V 25 μa I GES Gate-emitter leakage current (V CE = 0) V GE = ± 20 V 250 na V Table 5. Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit C ies Input capacitance - 7792 - pf C oes Output capacitance V CE = 25 V, f = 1 MHz, - 262 - pf C res V GE = 0 Reverse transfer capacitance - 158 - pf Q g Total gate charge - 306 - nc Q ge Gate-emitter charge V CC = 520 V, I C = 60 A, V GE = 15 V, see Figure 28-126 - nc Q gc Gate-collector charge - 58 - nc 4/17 DocID024365 Rev 2
STGW60H65DFB, STGWT60H65DFB Electrical characteristics Table 6. IGBT switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) Turn-on delay time - 51 ns t r Current rise time - 22 - ns (di/dt) on Turn-on current slope - 2218 A/μs V CE = 400 V, I C = 60 A, t d(off) Turn-off delay time 160 ns R G = 5 Ω, V GE = 15 V, t f Current fall time - 18 - ns see Figure 27 E (1) on Turn-on switching losses - 1086 - μj E (2) off Turn-off switching losses - 626 - μj E ts Total switching losses - 1712 - μj t d(on) Turn-on delay time - 50 ns t r Current rise time - 30 - ns (di/dt) on Turn-on current slope - 2050 A/μs t d(off) Turn-off delay time V CE = 400 V, I C = 60 A, 184 ns t f Current fall time R G = 5 Ω, V GE = 15 V, T J = 175 C, see Figure 27-117 - ns (1) E on Turn-on switching losses - 2350 - μj E (2) off Turn-off switching losses - 1017 - μj E ts Total switching losses - 3367 - μj 1. Energy losses include reverse recovery of the diode. 2. Turn-off losses include also the tail of the collector current. Table 7. Diode switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit t rr Reverse recovery time - 60 - ns Q rr Reverse recovery charge - 99 - nc I rrm Reverse recovery current I F = 60 A, V R = 400 V, di/dt = A/μs, V GE = 15 V, - 3.3 - A di rr/ /dt Peak rate of fall of reverse see Figure 27 recovery current during t b - 187 - A/μs E rr Reverse recovery energy - 68 - μj t rr Reverse recovery time - 310 - ns Q rr Reverse recovery charge - 1550 - nc I rrm Reverse recovery current I F = 60 A, V R = 400 V, di/dt = A/μs, V GE = 15 V, - 10 - A di rr/ /dt Peak rate of fall of reverse recovery current during t b T J = 175 C, see Figure 27-59 - A/μs E rr Reverse recovery energy - 674 - μj DocID024365 Rev 2 5/17
Electrical characteristics STGW60H65DFB, STGWT60H65DFB 2.1 Electrical characteristics (curve) Figure 2. Output characteristics (T J = 25 C) Figure 3. Output characteristics (T J = 175 C) IC (A) VGE =15V 11V GIPD230820131147FSR IC (A) VGE =15V GIPD230820131205FSR 80 80 11V 9V 60 9V 60 40 40 20 20 7V 0 0 1 2 3 4 VCE(V) Figure 4. Transfer characteristics 0 0 1 2 3 4 VCE(V) Figure 5. Collector current vs. case temperature IC (A) TJ =175 C -40 C GIPD270820131335FSR IC (A) 80 GIPD270820131347FSR 80 25 C 60 60 40 VCE= 10V 40 20 20 0 7 8 9 10 11 VGE(V) Figure 6. Power dissipation vs. case temperature 0 0 25 50 75 125 150 TC( C) Figure 7. V CE(sat) vs. junction temperature Ptot (W) GIPD270820131401FSR VCE(sat) (V) 2.6 VGE= 15V GIPD270820131410FSR IC= 120A 300 2.4 2.2 200 2.0 IC= 60A 1.8 1.6 1.4 IC= 30A 0 0 25 50 75 125 150 TC( C) 1.2-50 0 50 150 TJ( C) 6/17 DocID024365 Rev 2
STGW60H65DFB, STGWT60H65DFB Electrical characteristics Figure 8. V CE(sat) vs. collector current Figure 9. Forward bias safe operating area VCE(sat) (V) 2.4 2.2 GIPD270820131423FSR VGE= 15V TJ= 175 C IC (A) GIPD270820131505FSR 2.0 TJ= 25 C 1.8 1.6 1.4 1.2 1.0 TJ= -40 C 10 1 10 µs µs 1 ms (single pulse T C =25 C, TJ<=175 C; VGE=15V) 0.8 0 20 40 60 80 IC(A) Figure 10. Thermal impedance 0.1 1 10 VCE(V) Figure 11. Thermal impedance for diode K d=0.5 ZthTO2T_A 0.2 0.1 10-1 0.05 0.02 0.01 10-2 Single pulse 10-5 10-4 10-3 10-2 10-1 tp (s) Figure 12. Diode V F vs. forward current Figure 13. Normalized BV CES vs. junction temperature IC (A) 2.8 TJ= -40 C GIPD270820131550FSR BVCES (norm) 1.1 GIPD280820131415FSR 2.4 TJ= 25 C IC= 2mA 2 1.6 TJ= 175 C 1.0 1.2 0.8 20 40 60 80 IF(A) 0.9-50 0 50 150 TJ( C) DocID024365 Rev 2 7/17
Electrical characteristics STGW60H65DFB, STGWT60H65DFB Figure 14. Normalized V GE(th) vs. junction temperature Figure 15. Gate charge vs. gate-emitter voltage VGE(th) (norm) 1.0 IC= 1mA GIPD280820131503FSR VGE (V) 14 12 VCC= 520V, IC= 60A Ig= 1mA GIPD280820131507FSR 0.9 10 8 0.8 6 0.7 4 2 0.6-50 0 50 150 TJ( C) Figure 16. Switching losses vs temperature 0 0 50 150 200 250 300 350 Qg(nC) Figure 17. Switching losses vs gate resistance E (μj) GIPD290820131623FSR C(pF) GIPD280820131527FSR VCC= 400V, VGE= 15V Rg= 10Ω, IC= 60A EON EON 2600 2900 1800 2 EOFF EOFF 0 1300 VCC = 400V, VGE = 15V IC = 60A, TJ = 175 C 200 25 50 75 125 150 TJ( C) 500 2 6 10 14 18 RG(Ω) Figure 18. Switching losses vs collector current Figure 19. Switching losses vs collector emitter voltage E (μj) 7000 VCC= 400V, VGE= 15V Rg= 10Ω, TJ= 175 C GIPD280820131538FSR E (μj) 4300 TJ= 175 C, VGE= 15V Rg= 10Ω, IC= 60A GIPD280820131554FSR EON 6000 3300 5000 4000 3000 EON EOFF 2300 EOFF 2000 1300 0 0 0 20 40 60 80 IC(A) 300 150 VCE(V) 250 350 450 8/17 DocID024365 Rev 2
STGW60H65DFB, STGWT60H65DFB Electrical characteristics Figure 20. Switching times vs collector current Figure 21. Switching times vs gate resistance (ns) tdoff GIPD280820131613FSR (ns) TJ= 175 C, VGE= 15V IC= 60A, VCC= 400V GIPD280820131622FSR tdon 0 tf tdoff 10 tr tdon tr TJ= 175 C, VGE= 15V Rg= 10Ω, VCC= 400V 1 0 20 40 60 80 120 140 IC(A) Figure 22. Reverse recovery current vs. diode current slope 10 2 4 6 8 10 12 14 16 18 20 Rg(Ω) Figure 23. Reverse recovery time vs. diode current slope tf Irm (A) 80 70 60 Vr= 400V, IF= 60A TJ= 175 C GIPD280820131635FSR Trr (μs) 300 250 Vr= 400V, IF= 60A GIPD280820131643FSR 50 40 30 20 10 TJ= 25 C 200 150 50 TJ= 175 C TJ= 25 C 0 0 500 0 1500 2000 2500 di/dt(a/μs Figure 24. Reverse recovery charge vs. diode current slope 0 0 500 0 1500 2000 2500 di/dt(a/μs) Figure 25. Reverse recovery energy vs. diode current slope Qrr (nc) Vr= 400V, IF= 60A GIPD280820131650FSR Err (μj) GIPD280820131656FSR 4000 3500 3000 TJ= 175 C 800 700 600 TJ= 175 C 2500 500 Vr= 400V, IF= 60A 2000 400 1500 300 0 500 TJ= 25 C 200 TJ= 25 C 0 0 500 0 1500 2000 2500 di/dt(a/μs) 0 0 500 0 1500 2000 2500 di/dt(a/μs) DocID024365 Rev 2 9/17
Electrical characteristics STGW60H65DFB, STGWT60H65DFB Figure 26. Capacitance variations C(pF) 00 GIPD280820131518FSR Cies 0 Coes Cres 10 0.1 VCE(V) 1 10 10/17 DocID024365 Rev 2
STGW60H65DFB, STGWT60H65DFB Test circuits 3 Test circuits Figure 27. Test circuit for inductive load switching Figure 28. Gate charge test circuit Figure 29. Switching waveform AM01504v1 AM01505v1 Figure 30. Diode recovery time waveform 90% di/dt Qrr VCE VG IC Td(on) Ton Tr(Ion) Tr(Voff) Tcross Td(off) Tf Toff 10% 90% 10% 90% 10% IF IRRM ta trr tb IRRM t VF dv/dt AM01506v1 AM01507v1 DocID024365 Rev 2 11/17
Package mechanical data STGW60H65DFB, STGWT60H65DFB 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 8. TO-247 mechanical data Dim. mm. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 5.45 5.60 L 14.20 14.80 L1 3.70 4.30 L2 18.50 P 3.55 3.65 R 4.50 5.50 S 5.30 5.50 5.70 12/17 DocID024365 Rev 2
STGW60H65DFB, STGWT60H65DFB Package mechanical data Figure 31. TO-247 drawing 0075325_G DocID024365 Rev 2 13/17
Package mechanical data STGW60H65DFB, STGWT60H65DFB Table 9. TO-3P mechanical data Dim. mm Min. Typ. Max. A 4.60 5 A1 1.45 1.50 1.65 A2 1.20 1.40 1.60 b 0.80 1 1.20 b1 1.80 2.20 b2 2.80 3.20 c 0.55 0.60 0.75 D 19.70 19.90 20.10 D1 13.90 E 15.40 15.80 E1 13.60 E2 9.60 e 5.15 5.45 5.75 L 19.50 20 20.50 L1 3.50 L2 18.20 18.40 18.60 øp 3.10 3.30 Q 5 Q1 3.80 14/17 DocID024365 Rev 2
STGW60H65DFB, STGWT60H65DFB Package mechanical data Figure 32. TO-3P drawing 8045950_A DocID024365 Rev 2 15/17
Revision history STGW60H65DFB, STGWT60H65DFB 5 Revision history Table 10. Document revision history Date Revision Changes 12-Mar-2013 1 Initial release. 30-Aug-2013 2 Document status promoted from preliminary to production data. Added Section 2.1: Electrical characteristics (curve). 16/17 DocID024365 Rev 2
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