STGW4V6DF STGWT4V6DF 6 V, 4 A very high speed trench gate field-stop IGBT Datasheet - production data Features Maximum junction temperature: T J = 175 C Very high speed switching series Tail-less switching off 1 2 3 1 2 3 Low saturation voltage: V CE(sat) = 1.8 V (typ.) @ I C = 4 A Tight parameters distribution Safe paralleling TO-247 TO-3P Low thermal resistance Very fast soft recovery antiparallel diode Lead free package Figure 1. Internal schematic diagram Applications Photovoltaic inverters Uninterruptible power supply Welding Power factor correction Very high frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the "V" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive V CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Table 1. Device summary Order code Marking Package Packaging STGW4V6DF GW4V6DF TO-247 Tube STGWT4V6DF GWT4V6DF TO-3P Tube June 213 DocID2442 Rev 3 1/16 This is information on a product in full production. www.st.com 16
Electrical ratings STGW4V6DF, STGWT4V6DF 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V CES Collector-emitter voltage (V GE = ) 6 V I C Continuous collector current at T C = 25 C 8 A I C Continuous collector current at T C = 1 C 4 A I (1) CP Pulsed collector current 16 A V GE Gate-emitter voltage ±2 V I F Continuous forward current at T C = 25 C 8 A I F Continuous forward current at T C = 1 C 4 A (1) I FP Pulsed forward current 16 A P TOT Total dissipation at T C = 25 C 283 W T STG Storage temperature range - 55 to 15 C T J Operating junction temperature - 55 to 175 C 1. Pulse width limited by maximum junction temperature and turn-off within RBSOA Table 3. Thermal data Symbol Parameter Value Unit R thjc Thermal resistance junction-case IGBT.53 C/W R thjc Thermal resistance junction-case diode 1.14 C/W R thja Thermal resistance junction-ambient 5 C/W 2/16 DocID2442 Rev 3
STGW4V6DF, STGWT4V6DF Electrical characteristics 2 Electrical characteristics T J = 25 C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)CES Collector-emitter breakdown voltage (V GE = ) I C = 2 ma 6 V V GE = 15 V, I C = 4 A 1.8 2.3 V CE(sat) V F Collector-emitter saturation voltage Forward on-voltage V GE = 15 V, I C = 4 A T J = 125 C V GE = 15 V, I C = 4 A T J = 175 C 2.15 2.35 I F = 4 A 1.85 2.45 V I F = 4 A, T J = 125 C 1.5 V I F = 4 A, T J = 175 C 1.4 V V GE(th) Gate threshold voltage V CE = V GE, I C = 1 ma 5 6 7 V I CES Collector cut-off current (V GE = ) V CE = 6 V 25 μa I GES Gate-emitter leakage current (V CE = ) V GE = ± 2 V 25 na V Table 5. Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit C ies Input capacitance - 54 - pf C oes Output capacitance V CE = 25 V, f = 1 MHz, - 22 - pf C res V GE = Reverse transfer capacitance - 18 - pf Q g Total gate charge - 226 - nc Q ge Gate-emitter charge V CC = 48 V, I C = 4 A, V GE = 15 V, see Figure 29-38 - nc Q gc Gate-collector charge - 95 - nc DocID2442 Rev 3 3/16
Electrical characteristics STGW4V6DF, STGWT4V6DF Table 6. IGBT switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) Turn-on delay time - 52 - ns t r Current rise time - 17 - ns (di/dt) on Turn-on current slope - 185 - A/μs V CE = 4 V, I C = 4 A, t d ( off ) Turn-off delay time - 28 - ns R G = 1 Ω, V GE = 15 V, t f Current fall time - 2 - ns see Figure 28 E (1) on Turn-on switching losses - 456 - μj E (2) off Turn-off switching losses - 411 - μj E ts Total switching losses - 867 - μj t d(on) Turn-on delay time - 52 - ns t r Current rise time - 21 - ns (di/dt) on Turn-on current slope - 1538 - A/μs t d ( off ) Turn-off delay time V CE = 4 V, I C = 4 A, - 22 - ns t f Current fall time R G = 1 Ω, V GE = 15 V, T J = 175 C, see Figure 28-21 - ns (1) E on Turn-on switching losses - 133 - μj E (2) off Turn-off switching losses - 56 - μj E ts Total switching losses - 189 - μj 1. Energy losses include reverse recovery of the diode. 2. Turn-off losses include also the tail of the collector current. Table 7. Diode switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit t rr Reverse recovery time - 41 - ns Q rr Reverse recovery charge - 44 - nc I rrm Reverse recovery current I F = 4 A, V R = 4 V, V GE = 15 V, di/dt=1 A/μs - 21.6 - A di rr/ /dt Peak rate of fall of reverse see Figure 28 recovery current during t b - 1363 - A/μs E rr Reverse recovery energy - 151 - μj t rr Reverse recovery time - 19 - ns Q rr Reverse recovery charge - 24 - nc I rrm Reverse recovery current I F = 4 A, V R = 4 V, V GE = 15 V, di/dt=1 A/μs - 44.4 - A di rr/ /dt Peak rate of fall of reverse recovery current during t b T J = 175 C, see Figure 28-67 - A/μs E rr Reverse recovery energy - 718 - μj 4/16 DocID2442 Rev 3
STGW4V6DF, STGWT4V6DF Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Power dissipation vs. case temperature Figure 3. Collector current vs. case temperature Ptot (W) 25 AM17385v1 IC (A) 8 7 AM17386v1 2 6 15 5 4 1 3 5 2 1 25 5 75 1 125 15 175 TC( C) 25 5 75 1 125 15 175 TC( C) Figure 4. Output characteristics (T J =25 C) Figure 5. Output characteristics (T J =175 C) IC (A) 14 12 1 8 VGE=15V 11V 13V 9V AM17387v1 IC (A) 14 12 1 8 VGE=15V 13V 11V 9V AM17388v1 6 6 4 4 2 2 7V 1 2 3 4 VCE(V) 1 2 3 4 VCE(V) Figure 6. V CE(sat) vs. junction temperature Figure 7. V CE(sat) vs. collector current VCE(sat) (V) VGE=15V IC=8A AM17389v1 VCE(sat) (V) VGE=15V Tj=175 C AM1739v1 2.8 2.6 2.4 2.2 2. 1.8 1.6 1.4 IC=4A IC=2A 3. 2.8 2.6 2.4 2.2 2. 1.8 1.6 1.4 Tj=25 C Tj=-4 C 1.2-5 5 1 15 TC( C) 1.2 1 2 3 4 5 6 7 8 IC(A) DocID2442 Rev 3 5/16
Electrical characteristics STGW4V6DF, STGWT4V6DF Figure 8. Collector current vs. switching frequency Figure 9. Forward bias safe operating area IC (A) AM17391v1 IC (A) AM17392v1 9 8 TC=8 C 1 7 6 5 4 3 2 1 TC=1 C rectangular current shape, (duty cycle=.5, Vcc= 4V Rg=1Ω, Vge=/15V, Tj=175 C) 1 1.1 Single pulse, Tc=25 C Tj<175 C, VGE=15V 1μs 1μs 1ms 1 1 f(khz).1 1 1 1 VCE(V) Figure 1. Transfer characteristics Figure 11. Diode V F vs. forward current IC (A) 16 14 12 1 8 6 Tj=-4 C Tj=175 C Tj=25 C AM17393v1 VF (A) 2.4 2. 1.6 Tj=-4 C Tj=25 C Tj=175 C AM17394v1 4 1.2 2 6 8 1 VGE(V).8 1 2 3 4 5 6 7 8 IF(A) Figure 12. Normalized V GE(th) vs junction temperature Figure 13. Normalized V (BR)CES vs. junction temperature VGE(th) (norm) 1. VCE=VGE IC=1mA AM17395v1 V(BR)CES (norm) 1.1 IC=2mA AM17396v1.9 1.5.8 1..7.95.6-5 5 1 15 TC( C).9-5 5 1 15 TC( C) 6/16 DocID2442 Rev 3
STGW4V6DF, STGWT4V6DF Electrical characteristics Figure 14. Capacitance variations Figure 15. Gate charge vs. gate-emitter voltage C(pF) AM17397v1 VGE(V) AM17398v1 1 Cies 16 14 1 12 1 1 Cres Coes 8 6 4 2 1.1 1 1 VCE(V) Figure 16. Switching losses vs. collector current 5 1 15 2 25 Qg(nC) Figure 17. Switching losses vs. gate resistance E(μJ) 28 VCC=4V, VGE=15V Rg=1Ω, Tj=175 C Eon AM17399v1 E(μJ) 23 VCC=4V, VGE=15V IC=4A, Tj=175 C Eon AM174v1 24 19 2 16 12 Eoff 15 11 Eoff 8 4 7 2 4 6 8 IC(A) Figure 18. Switching losses vs. junction temperature 3 1 2 3 4 Rg(Ω) Figure 19. Switching losses vs. collector emitter voltage E(μJ) 13 VCC=4V, VGE=15V IC=4A, Rg=1Ω Eon AM1741v1 E(μJ) 16 VGE=15V, Tj=175 C IC=4A, Rg=1Ω Eon AM1742v1 11 14 9 12 1 7 Eoff 5 3 25 5 75 1 125 15 TJ( C) 8 Eoff 6 4 2 15 2 25 3 35 4 45 VCE(V) DocID2442 Rev 3 7/16
Electrical characteristics STGW4V6DF, STGWT4V6DF Figure 2. Switching times vs. collector current Figure 21. Switching times vs. gate resistance t(ns) VCC=4V, VGE=15V Tj=175 C, Rg=1Ω tdoff AM1743v1 t(ns) 1 VCC=4V VGE=15V Tj=175 C IC=4A AM1744v1 1 tdon 1 tdoff tdon tr tr tf tf 1 2 4 6 8 IC(A) Figure 22. Reverse recovery current vs. diode current slope Irm(A) 9 8 7 6 5 4 3 2 1 Vr=4V IF=4A Tj=175 C Tj=25 C AM1745v1 5 1 15 2 25 di/dt (A/μs) Figure 24. Reverse recovery charge vs. diode current slope 1 1 2 3 4 Rg(Ω) Figure 23. Reverse recovery time vs. diode current slope trr(μs) 25 2 15 1 5 Tj=25 C Vr=4V IF=4A Tj=175 C AM1746v1 5 1 15 2 25 di/dt (A/μs) Figure 25. Reverse recovery energy vs. diode current slope Qrr(nC) 3 25 Vr=4V IF=4A Tj=175 C AM1747v1 Err(μJ) 16 14 12 Vr=4V IF=4A Tj=175 C AM1748v1 2 1 15 1 Tj=25 C 5 5 1 15 2 25 di/dt (A/μs) 8 6 Tj=25 C 4 2 5 1 15 2 25 di/dt (A/μs) 8/16 DocID2442 Rev 3
STGW4V6DF, STGWT4V6DF Electrical characteristics Figure 26. Thermal data for IGBT K δ=.5 ZthTO2T_B.2.1.5 1-1.1.2 Zth=k Rthj-c δ=tp/t Single pulse 1-2 1-5 1-4 1-3 1-2 1-1 tp(s) Figure 27. Thermal data for diode tp t DocID2442 Rev 3 9/16
Test circuits STGW4V6DF, STGWT4V6DF 3 Test circuits Figure 28. Test circuit for inductive load switching Figure 29. Gate charge test circuit Figure 3. Switching waveform AM154v1 AM155v1 Figure 31. Diode recovery time waveform 9% di/dt Qrr VCE VG IC Td(on) Ton Tr(Ion) Tr(Voff) Tcross Td(off) Tf Toff 1% 9% 1% 9% 1% IF IRRM ta trr tb IRRM t VF dv/dt AM156v1 AM157v1 1/16 DocID2442 Rev 3
STGW4V6DF, STGWT4V6DF Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 8. TO-247 mechanical data Dim. mm. Min. Typ. Max. A 4.85 5.15 A1 2.2 2.6 b 1. 1.4 b1 2. 2.4 b2 3. 3.4 c.4.8 D 19.85 2.15 E 15.45 15.75 e 5.3 5.45 5.6 L 14.2 14.8 L1 3.7 4.3 L2 18.5 P 3.55 3.65 R 4.5 5.5 S 5.3 5.5 5.7 DocID2442 Rev 3 11/16
Package mechanical data STGW4V6DF, STGWT4V6DF Figure 32. TO-247 drawing 75325_G 12/16 DocID2442 Rev 3
STGW4V6DF, STGWT4V6DF Package mechanical data Table 9. TO-3P mechanical data Dim. mm Min. Typ. Max. A 4.6 5 A1 1.45 1.5 1.65 A2 1.2 1.4 1.6 b.8 1 1.2 b1 1.8 2.2 b2 2.8 3.2 c.55.6.75 D 19.7 19.9 2.1 D1 13.9 E 15.4 15.8 E1 13.6 E2 9.6 e 5.15 5.45 5.75 L 19.5 2 2.5 L1 3.5 L2 18.2 18.4 18.6 øp 3.1 3.3 Q 5 Q1 3.8 DocID2442 Rev 3 13/16
Package mechanical data STGW4V6DF, STGWT4V6DF Figure 33. TO-3P drawing 84595_A 14/16 DocID2442 Rev 3
STGW4V6DF, STGWT4V6DF Revision history 5 Revision history Table 1. Document revision history Date Revision Changes 2-Mar-213 1 Initial release. 17-Apr-213 2 4-Jun-213 3 Document status promoted from preliminary data to production data. Added: Section 2.1: Electrical characteristics (curves) Added minimum and maximum values for V GE(th) in Table 4: Static characteristics. DocID2442 Rev 3 15/16
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