UNISONIC TECHNOLOGIES CO., LTD DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL) DESCRIPTION The UTC UD466 provides excellent R DS(ON) and low gate charge by using advanced trench technology MOSFETs. The complementary MOSFETs may be help to form a level shifted high side switch and also for lots of other applications. FEATURES * N-Channel: 3V/6.9A R DS(ON) = 22.5 mω (typ.) @V GS =V R DS(ON) = 34.5 mω (typ.) @V GS =4.5V * P-Channel: -3V/-6A R DS(ON) = 28 mω (typ.) @V GS = -V R DS(ON) = 44 mω (typ.) @V GS = -4.5V * Reliable and rugged SYMBOL DIP-8 SOP-8 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 4 5 6 7 8 UD466L-D8-T UD466G-D8-T DIP-8 S1 G1 S2 G2 D2 D2 D1 D1 Tube UD466L-S8-R UD466G-S8-R SOP-8 S1 G1 S2 G2 D2 D2 D1 D1 Tape Reel 1 of 8 Copyright 2 Unisonic Technologies Co., Ltd
PIN CONFIGURATION UNISONIC TECHNOLOGIES CO., LTD 2 of 9
ABSOLUTE MAXIMUM RATINGS (T A = 25 С, unless otherwise specified) N-CHANNEL PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 3 V Gate-Source Voltage V GSS ±2 V Continuous Drain Current (Note2) I D 6.9 A Pulsed Drain Current (Note2) I DM 3 A Power Dissipation DIP-8 2.5 W P D SOP-8 2 W Junction Temperature T J +15 С Storage Temperature T STG -55 ~ +15 С P-CHANNEL PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS -3 V Gate-Source Voltage V GSS ±2 V Continuous Drain Current (Note 2) I D -6 A Pulsed Drain Current (Note 2) I DM -3 A Power Dissipation DIP-8 2.5 W P D SOP-8 2 W Junction Temperature T J +15 С Storage Temperature T STG -55 ~ +15 С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Surface Mounted on 1in 2 pad area, t sec THERMAL DATA PARAMETER SYMBOL MIN TYP MAX UNIT DIP-8 74 1 С/W Junction to Ambient (Note) θ JA SOP-8 67 8 С/W Note: Surface Mounted on 1in 2 pad area, t sec UNISONIC TECHNOLOGIES CO., LTD 3 of 9
ELECTRICAL CHARACTERISTICS (T A =25 C, unless otherwise specified) N-CHANNEL PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS =V, I D =25uA 3 V Drain-Source Leakage Current I DSS V DS =24V, V GS =V 1 ua Gate-Source Leakage Current I GSS V DS =V, V GS =±2V na ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS =V GS, I D =25uA 1 1.9 3 V Drain-Source On-State Resistance R DS(ON) V GS =V, I D =6.9A 22.5 28 mω V GS =4.5V, I D =5A 34.5 42 mω DYNAMIC CHARACTERISTICS Input Capacitance C ISS 68 pf Output Capacitance C OSS V GS =V,V DS =15V,f=1.MHz 2 pf Reverse Transfer Capacitance C RSS 77 pf SWITCHING CHARACTERISTICS Turn-ON Delay Time (Note2) t D(ON) 4.6 ns Turn-ON Rise Time t R V DS =15V, V GS =V, R G =3Ω, 4.1 ns Turn-OFF Delay Time t D(OFF) R L =2.2Ω 2.6 ns Turn-OFF Fall Time t F 5.2 ns Total Gate Charge (Note2) Q G 13.8 nc Gate-Source Charge Q GS V DS =15V, V GS =V, I D =6.9A 1.82 nc Gate-Drain Charge Q GD 3.2 nc SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage(Note2) V SD I S =1A, V GS =V.76 1 V Diode Continuous Forward Current (Note3) I S 3 A Reverse Recovery Time t RR 16.5 ns I DS =6.9A, di/dt=a/μs Reverse Recovery Charge 7.8 nc Q RR P-CHANNEL PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS =V, I D =-25uA -3 V Drain-Source Leakage Current I DSS V DS =-24V, V GS =V -1 ua Gate-Source Leakage Current I GSS V DS =V, V GS =±2V ± na ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS =V GS, I D =-25uA -1.2-2 -2.4 V Drain-Source On-State Resistance (Note2) R DS(ON) V GS =-V, I D =-6A 28 35 mω V GS =-4.5V, I D =-5A 44 58 mω DYNAMIC CHARACTERISTICS Input Capacitance C ISS 92 pf Output Capacitance C OSS V GS =V,V DS =-15V,f=1.MHz 19 pf Reverse Transfer Capacitance C RSS 122 pf SWITCHING CHARACTERISTICS Turn-ON Delay Time (Note2) t D(ON) 7.7 ns Turn-ON Rise Time t R V DS =-15V, V GS =-V, 5.7 ns Turn-OFF Delay Time t D(OFF) R G =3Ω, R L =2.7Ω 2.2 ns Turn-OFF Fall Time t F 9.5 ns Total Gate Charge (Note2) Q G 18.5 nc V DS =-15V, V GS =-V, Gate-Source Charge Q GS 2.7 nc I D =-6A Gate-Drain Charge 4.5 nc Q GD UNISONIC TECHNOLOGIES CO., LTD 4 of 9
ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage(Note2) V SD I S =-1A, V GS =V -.76-1 V Diode Continuous Forward Current (Note3) I S -4.2 A Reverse Recovery Time t RR 2 ns I DS =-6A, di/dt=a/μs Reverse Recovery Charge Q RR 8.8 nc Notes: 1. Pulse width limited by T J(MAX) 2. Pulse width 3µs, duty cycle 2%. 3. Surface Mounted on 1in 2 pad area, t sec. UNISONIC TECHNOLOGIES CO., LTD 5 of 9
TYPICAL CHARACTERISTICS N-CHANNEL Drain Current,ID (A) Drain Current,ID (A) 6 5 4 3 2 On-Resistance vs. Drain Current and Gate Voltage V GS =4.5V V GS =V 5 15 2 Drain Current,I D (A) 9 8 7 6 5 4 3 2 Capacitance Characteristics C ISS C OSS f=1mh Z V GS =V C RSS 5 15 2 25 3 Drain to Source Voltage,V DS (V) Drain to Source On- Resistance,RDS(ON) (mω) Reverse Drain Current,IS (A) UNISONIC TECHNOLOGIES CO., LTD 6 of 9
TYPICAL CHARACTERISTICS(Cont.) Gate to Source Voltage,VGS (V) 8 6 4 2 Gate- Charge Characteristics V DS =15V I D =6.9A Power (W) 4 3 2 Single Pulse Power Rating Junctionto-Ambient T J(Max) =15 T A =25 2 4 6 8 12 14 Gate Charge,Q G (nc).1.1.1 1 Pulse Width (s) Drain Current,ID (A) Normalized Transient Thermal Resistance,ZθJA UNISONIC TECHNOLOGIES CO., LTD 7 of 9
TYPICAL CHARACTERISTICS(Cont.) P-CHANNEL 3 25 -V On-Region Characteristics -6V -4.5V -5V 3 25 Transfer Characteristics V DS =-5V Drain Current,-ID (A) 2 15 5-4V -3.5V V GS =-3V Drain Current,-ID (A) 2 15 5 125 25 1 2 3 4 5 Drain to Source Voltage,-V DS (V).5 1 1.5 2 2.5 3 3.5 4 4.5 5 Gate to Source Voltage,-V GS (V) 6 55 5 45 4 35 3 25 2 15 On-Resistance vs. Drain Current and Gate Voltage V GS =-4.5V V GS =-V 5 15 2 25 Drain Current,-I D (A) Capacitance (pf) 15 125 75 5 25 C RSS Capacitance Characteristics C ISS C OSS 5 15 2 25 3 Drain to Source Voltage,-V DS (V) Drain to Source On- Resistance,RDS(ON) (mω) Reverse Drain Current,-IS (A) Drain to Source On- Resistance,RDS(ON) (mω) UNISONIC TECHNOLOGIES CO., LTD 8 of 9
TYPICAL CHARACTERISTICS(Cont.) Gate to Source Voltage,-VGS (V) 8 6 4 2 Gate-Charge Characteristics V DS =-15V I D =-6A Power (W) 4 3 2 Single Pulse Power Rating Junctionto-Ambient T J(Max) =15 T A =25 4 8 12 16 2 Gate Charge,-Q G (nc).1.1.1 1 Pulse Width (s) Drain Current,-ID (A).. 1. Maximum Forward Biased Safe Operating Area R DS(ON) Limited μs 1ms ms.1s μs DC s.1.1 1 Drain to Source Voltage,-V DS (V) 1s T J(Max) =15 T A =25 Normalized Transient Thermal Resistance,ZθJA 1.1.1 Normalized Maximum Transient Thermal Impedance D=T ON /T T J,PK =T A +P DM.Z θja.r θja R θja =62.5 /W Single Pulse In descending order D=.5,.3,.1,.5,. 2,.1,single pulse...1.1.1 1 Pulse Width (s) P D T ON T UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD 9 of 9