General Description The MDI5N / MDD5N use advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDI5N is suitable device for SMPS, HID and general purpose applications. MDI5N/MDD5N N-Channel MOSFET V, 3. A,.6Ω Features V DS = V = 3.A R DS(ON).6Ω Applications Power Supply PFC Ballast @V GS = V @V GS = V D G D S I-PAK (TO-5) G S Absolute Maximum Ratings (Ta = 5 o C) Characteristics Symbol Rating Unit Drain-Source Voltage V DSS V Gate-Source Voltage V GSS ±3 V Continuous Drain Current T C =5 o C 3. A T C = o C.5 A Pulsed Drain Current () M 3.6 A Power Dissipation T C =5 o C 5 W P D Derate above 5 o C.36 W/ o C Peak Diode Recovery dv/dt (3) Dv/dt.5 V/ns Repetitive Pulse Avalanche Energy () E AR.5 mj Single Pulse Avalanche Energy () E AS 7 mj Junction and Storage Range T J, T stg -55~5 o C Thermal Characteristics Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient () R θja Thermal Resistance, Junction-to-Case () R θjc.75 o C/W
Ordering Information Part Number Temp. Range Package Packing RoHS Status MDI5NTH -55~5 o C TO-5(I-PAK) Tube Halogen Free MDD5NRH -55~5 o C D-PAK Reel Halogen Free Electrical Characteristics (Ta =5 o C) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BV DSS = 5µA, V GS = V - - Gate Threshold Voltage V GS(th) V DS = V GS, = 5µA 3. - 5. Drain Cut-Off Current SS V DS = V, V GS = V - - µa Gate Leakage Current I GSS V GS = ±3V, V DS = V - - na Drain-Source ON Resistance R DS(ON) V GS = V, =.7A..6 Ω Forward Transconductance g fs V DS = 3V, =.7A -. - S Dynamic Characteristics Total Gate Charge Q g - 9 Gate-Source Charge Q gs V DS = 3V, = 3.A, V GS = V (3) -.5 Gate-Drain Charge Q gd - Input Capacitance C iss - 9 Reverse Transfer Capacitance C rss V DS = 5V, V GS = V, f =.MHz - 3 Output Capacitance C oss - 6 Turn-On Delay Time t d(on) - Rise Time t r V GS = V, V DS = V, = 3.A, - 5 Turn-Off Delay Time t d(off) R G = 5Ω (3) - Fall Time t f - 3 Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge I S - 3. - A V SD I S = 3.A, V GS = V -. V t rr - ns I F = 3.A, di/dt = A/µs Q rr -. µc V nc pf ns Note :. Pulse width is based on R θjc & R θja and the maximum allowed junction temperature of 5 C.. Pulse test: pulse width 3us, duty cycle %, pulse width limited by junction temperature TJ(MAX)=5 C. 3. I SD 3.A, di/dt A/us, V DD =5V, R g =5Ω, Starting TJ=5 C. L=6.mH, I AS =3.A, V DD =5V, R g =5Ω, Starting TJ=5 C
,Drain Current [A] 9 8 7 6 5 3 V gs =5.5V =6.V =6.5V =7.V =8.V =.V =5.V Notes. 5 μs Pulse Test. T C =5 5 5 V DS,Drain-Source Voltage [V] Fig. On-Region Characteristics R DS(ON) [Ω ] 3. 3. 3..8.6....8.6.. V GS =.V. 5,Drain Current [A] V GS =V Fig. On-Resistance Variation with Drain Current and Gate Voltage 3.. R DS(ON), (Normalized) Drain-Source On-Resistance.5..5..5. V GS = V. =.7 A BV DSS, (Normalized) Drain-Source Breakdown Voltage...9. V GS = V. = 5 μa. -5 5 5 T J, Junction [ o C] Fig.3 On-Resistance Variation with.8-5 5 5 T J, Junction [ o C] Fig. Breakdown Voltage Variation vs. * Notes ;. V DS =3V. V GS = V. 5us pulse [A] 5 5 R Reverse Drain Current [A] 5 5 6 8 V GS [V] Fig.5 Transfer Characteristics.....6.8.. V SD, Source-Drain Voltage [V] Fig.6 Body Diode Forward Voltage Variation with Source Current and 3
V GS, Gate-Source Voltage [V] 8 6 Note : I = 5A D 6 8 Q G, Total Gate Charge [nc] 8V V 3V Capacitance [pf] 6 5 3 C oss C iss C rss V DS, Drain-Source Voltage [V] C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd Notes ;. V GS = V. f = MHz Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics Operation in This Area is Limited by R DS(on) 5 µs, Drain Current [A] - Single Pulse T J =Max rated T C =5 DC µs ms ms ms, Drain Current [A] 3 - - V DS, Drain-Source Voltage [V] 5 5 75 5 5 T C, Case [ ] Fig.9 Maximum Safe Operating Area Fig. Maximum Drain Current vs. Case 5 D=.5. single Pulse R thjc =.75 /W T C = 5 Z θ JC (t), Thermal Response -..5.. Duty Factor, D=t /t Power (W) 3 - single pulse PEAK T J = P DM * Z θ JC * R θ JC (t) + T C R Θ JC =.75 /W -5 - -3 - - t, Rectangular Pulse Duration [sec] Fig. Transient Thermal Response Curve E-5 E- E-3.. Pulse Width (s) Fig. Single Pulse Maximum Power Dissipation
Physical Dimension TO-5 (I-PAK) Dimensions are in millimeters, unless otherwise specified 5
Physical Dimension D-PAK, 3L Dimensions are in millimeters, unless otherwise specified 6
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