Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FA Class medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
May 998 NT55 N-Channel Enhancement Mode Field Effect Transistor General escription These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, MOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as C motor control and C/C conversion where fast switching, low in-line power loss, and resistance to transients are needed. Features 4 A, 6 V. R S(ON) =. Ω @ V GS = V. High density cell design for extremely low R S(ON). High power and current handling capability in a widely used surface mount package. SuperSOT TM - SuperSOT TM -6 SuperSOT TM -8 SO-8 SOT-22 SOIC-6 SOT-22 G S G S SOT-22* (J2Z) G S G S Absolute Maximum Ratings T A = 25 o C unless otherwise noted Symbol Parameter NT55 Units V SS rain-source Voltage 6 V V GSS Gate-Source Voltage - Continuous ±2 V I Maximum rain Current - Continuous (Note a) 4 A - Pulsed 25 P Maximum Power issipation (Note a) W (Note b). (Note c). T J,T STG Operating and Storage Temperature Range -65 to 5 C THERMAL CHARACTERISTICS R θja Thermal Resistance, Junction-to-Ambient (Note a) 42 C/W R θjc Thermal Resistance, Junction-to-Case (Note ) 2 C/W * Order option J2Z for cropped center drain lead. 998 Fairchild Semiconductor Corporation NT55 Rev.B
Electrical Characteristics (T A = 25 O C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BV SS rain-source Breakdown Voltage V GS = V, I = 25 µa 6 V BV SS / T J Breakdown Voltage Temp. Coefficient I = 25 µa, Referenced to 25 o C 6 mv/ o C I SS Zero Gate Voltage rain Current V S = 48 V, V GS = V µa T J =25 C µa I GSSF Gate - Body Leakage, Forward V GS = 2 V, V S = V na I GSSR Gate - Body Leakage, Reverse V GS = -2 V, V S = V - na ON CHARACTERISTICS (Note 2) V GS(th) Gate Threshold Voltage V S = V GS, I = 25 µa 2 4 V T J =25 C.5 2.4 R S(ON) Static rain-source On-Resistance V GS = V, I = 4 A.84. Ω T J =25 C.4.8 I (ON) On-State rain Current V GS = V, V S = V 5 A g FS Forward Transconductance V S = 5 V, I = 4 A 6 S YNAMIC CHARACTERISTICS C iss Input Capacitance V S = V, V GS = V, 25 pf C oss Output Capacitance f =. MHz pf C rss Reverse Transfer Capacitance pf SWITCHING CHARACTERISTICS (Note 2) t (on) Turn - On elay Time V = 25 V, I =.2 A, 25 ns t r Turn - On Rise Time V GS = V, R GEN = 5 Ω 8 5 ns t (off) Turn - Off elay Time 7 65 ns t f Turn - Off Fall Time 6 ns Q g Total Gate Charge V S = 4 V, I = 4 A, 9 5 nc Q gs Gate-Source Charge V GS = V 2. nc Q gd Gate-rain Charge 2.6 nc RAIN-SOURCE IOE CHARACTERISTICS AN MAXIMUM RATINGS I S Maximum Continuous rain-source iode Forward Current 2.5 A V S rain-source iode Forward Voltage V GS = V, I S = 2.5 A (Note 2).85.2 V Notes:. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. Typical R θja using the board layouts shown below on FR-4 PCB in a still air environment: a. 42 o C/W when mounted on a in 2 pad of 2oz Cu. b. 95 o C/W when mounted on a.66 in 2 pad of 2oz Cu. c. o C/W when mounted on a.2 in 2 pad of 2oz Cu. Scale : on letter size paper 2. Pulse Test: Pulse Width < µs, uty Cycle < 2.% NT55 Rev.B
S Typical Electrical Characteristics I, RAIN-SOURCE CURRENT (A) 5 2 9 6 V GS =V 8.V 7.V 6.V 5.5V 5.V 2 4 5 V S, RAIN-SOURCE VOLTAGE (V) 4.5V R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE 2.5 2.5 V = 5.5V GS 6.V 6.5V 7.V.5 4 8 2 6 2 I, RAIN CURRENT (A) 8.V V Figure. On-Region Characteristics. Figure 2. On-Resistance Variation with rain Current and Gate Voltage. R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE 2.6.2.8 I = 4A V GS =V R S(ON), ON-RESISTANCE (OHM).4..2. T = 25 C A T = 25 C A I = 2A.4-5 -25 25 5 75 25 5 T J, JUNCTION TEMPERATURE ( C) 4 6 8 V GS, GATE TO SOURCE VOLTAGE (V) Figure. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to- Source Voltage. I, RAIN CURRENT (A) 8 6 4 2 V S = V T J = -55 C 25 C 25 C I, REVERSE RAIN CURRENT (A)... V GS = V T = 25 C A 25 C -55 C 2 4 6 8 V GS, GATE TO SOURCE VOLTAGE (V)..2.4.6.8.2 V S, BOY IOE FORWAR VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body iode Forward Voltage Variation with Current and Temperature. NT55 Rev.B
Typical Electrical Characteristics (continued) V GS, GATE-SOURCE VOLTAGE (V) 5 2 9 6 I = 4A V S = V 2V 4V 6 9 2 5 Q g, GATE CHARGE (nc) Figure 7. Gate Charge Characteristics. CAPACITANCE (pf) 5 2 5 2 f = MHz V GS = V C iss C oss C rss.. 4 6 V S, RAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance Characteristics. I, RAIN CURRENT (A) 5. RS(ON) LIMIT s C ms s us ms ms. V GS = V SINGLE PULSE o. R θja= C/W T A = 25 C...2.5 2 5 6 V S, RAIN-SOURCE VOLTAGE (V) POWER (W) 8 6 4 2... SINGLE PULSE TIME (SEC) SINGLE PULSE R θja = C/W T A= 25 C Figure 9. Maximum Safe Operating Area. Figure. Single Pulse Maximum Power issipation. r(t), NORMALIZE EFFECTIVE TRANSIENT THERMAL RESISTANCE.5.2..5 =.5.2..5.2.2 P(pk).. t.5 t 2 Single Pulse T J - T = P * R (t).2 A θja uty Cycle, = t / t 2..... t, TIME (sec) R (t) = r(t) * R θja θja R θja = C/W Figure. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in note c. Transient thermal response will change depending on the circuit board design. NT55 Rev.B
6.7 6.2 B. C B. 2.9.25 4 A.9.7. 6. 2..84.6.9.95 2. 4.6. C B LAN PATTERN RECOMMENATION SEE ETAIL A.8 MAX C...8 C 7. 6.7 GAGE PLANE 5 R.5±.5 R.5±.5 TYP.5.2 NOTES: UNLESS OTHERWISE SPECIFIE A) RAWING BASE ON JEEC REGISTRATION TO-26C, VARIATION AA. B) ALL IMENSIONS ARE IN MILLIMETERS. C) IMENSIONS O NOT INCLUE BURRS OR MOL FLASH. MOL FLASH OR BURRS OES NOT EXCEE.MM. ) IMENSIONING AN TOLERANCING PER ASME Y4.5M-29. E) LANPATTERN NAME: SOT2P7X8-4BN F) RAWING FILENAME: MKT-MA4AREV.25 5.6 MIN SEATING PLANE.7 ETAIL A SCALE: 2:
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