F2972 Datasheet. High Linearity Broadband SP2T 5MHz to 10GHz. Description. Features (50Ω) Competitive Advantage. Typical Applications.

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High Linearity Broadband SP2T 5MHz to 1GHz F2972 Datasheet Description The F2972 is a single-pole double-throw (SP2T) reflective RF switch featuring high linearity and wide bandwidth. This device is optimized from 5MHz to 1.8GHz to support downstream cable modem future migration for DOCSIS 3.1 applications, and operates at up to 1GHz to support a multitude of wireless RF applications. Superb performance is achieved when used in either 5Ω or 75Ω terminating impedance applications. The F2972 uses a single positive supply voltage of either +3.3V or +5.V and is compatible with either 1.8V or 3.3V control logic. Competitive Advantage The F2972 provides extremely low insertion loss across the entire bandwidth while providing superb distortion performance. Optimized for DOCSIS 3.1 applications up to 1.8GHz Optimized for Wi-Fi applications up to 5.9GHz Low insertion loss High isolation Fast switching No external matching required Typical Applications Broadband cable DOCSIS 3. / 3.1 Set top box CATV filter bank switching Wi-Fi Cellular BTS General purpose Features (75Ω) Low insertion loss:.23db at 24MHz.34dB at 1.8GHz High Isolation: 4dB at 1.8GHz P.1dB compression of +37dBm at 24MHz Second Harmonic: dbc at 24MHz Third Harmonic: -12dBc at 24MHz Composite Second Order Distortion > 1dBc Composite Triple Beat Distortion > 1dBc Features (5Ω) Low insertion loss:.4db at 2.4GHz.55dB at 8GHz High Isolation: 34dB at 2.4GHz High Linearity: IIP2 +125dBm at 2.4GHz IIP3 +77dBm at 2.4GHz P.1dB compression of +4dBm at 2.4GHz Second Harmonic: dbc at 2.4GHz Third Harmonic: -11dBc at 2.4GHz Block Diagram Figure 1. Block Diagram General Features Supply voltage: +2.5V to +5.25V 1.8V and 3.3V compatible control logic 2mm x 2mm, 12-pin TQFN package 217 Integrated Device Technology, Inc. 1 Rev O April 19, 217

Pin Assignments Figure 2. Pin Assignments for 2mm x 2mm x.5mm 12-pin TQFN, NEG12 Top View GND RF2 GND 12 11 1 GND 1 9 VCC RFC 2 F2972 8 EN GND 3 EP 7 VCTL 4 5 6 GND RF1 GND Pin Descriptions Table 1. Pin Descriptions Number Name Description 1 GND Internally grounded. Connect pin directly to paddle ground or as close as possible to pin with thru vias. 2 RFC RF Common Port. If this pin is not V DC, then an external coupling capacitor must be used. 3 GND Internally grounded. Connect pin directly to paddle ground or as close as possible to pin with thru vias. 4 GND Internally grounded. Connect pin directly to paddle ground or as close as possible to pin with thru vias. 5 RF1 RF1 Port. If this pin is not V DC, then an external coupling capacitor must be used. 6 GND Internally grounded. Connect pin directly to paddle ground or as close as possible to pin with thru vias. 7 V CTL Logic control pin. 8 EN 9 V CC Active high enable pin. If low, neither RF1 nor RF2 are connected to RFC. Pin is internally pulled up to 2.5V through a 5kΩ resistor. Power supply. Bypass to GND with capacitors shown in the Typical Application Circuit as close as possible to pin. 1 GND Internally grounded. Connect pin directly to paddle ground or as close as possible to pin with thru vias. 11 RF2 RF2 Port. If this pin is not V DC, then an external coupling capacitor must be used. 12 GND Internally grounded. Connect pin directly to paddle ground or as close as possible to pin with thru vias. EP Exposed Pad. Internally connected to GND. Solder this exposed pad to a PCB pad that uses multiple ground vias to provide heat transfer out of the device into the PCB ground planes. These multiple ground vias are also required to achieve the specified RF performance. 217 Integrated Device Technology, Inc. 2 Rev O April 19, 217

Absolute Maximum Ratings Stresses beyond those listed below may cause permanent damage to the device. Functional operation of the device at these or any other conditions beyond those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Table 2. Absolute Maximum Ratings Parameter Symbol Minimum Maximum Units V CC to GND V CC -.3 +5.5 V V CTL, EN V LOGIC -.3 Lower of (V CC +.3, 3.9) RF1, RF2, RFC V RF -.3 +.3 V Maximum Input CW Power, 5Ω, T EP = 25 C, Vcc = 5.25V (any port, insertion loss state) [a,b] Maximum Peak Power, 5Ω, T EP = 25 C, Vcc = 5.25V (any port, insertion loss state) [a, b, c] 5MHz f RF 1MHz P ABSCW1 3 1MHz < f RF 25MHz P ABSCW2 32 25MHz < f RF 2MHz P ABSCW3 33 2MHz < f RF 6MHz P ABSCW4 34 f RF > 6MHz P ABSCW5 33 5MHz f RF 1MHz P ABSPK1 35 1MHz < f RF 25MHz P ABSPK2 37 25MHz < f RF 2MHz P ABSPK3 38 2MHz < f RF 6MHz P ABSPK4 39 f RF > 6MHz P ABSPK5 38 Maximum Junction Temperature T JMAX +14 C Storage Temperature Range T ST -65 +15 C Lead Temperature (soldering, 1s) T LEAD +26 C Electrostatic Discharge HBM (JEDEC/ESDA JS-112) Electrostatic Discharge CDM (JEDEC 22-C11F) a. In a 5 system, dbmv = dbm [5Ω] + 47. In a 75 system, dbmv = dbm [75Ω] + 48.75. b. T EP = Temperature of the exposed paddle. c. 5% duty cycle of a 4.6ms period. V ESDHBM V ESDCDM 25 (Class 2) 1 (Class C3) V dbm dbm V V 217 Integrated Device Technology, Inc. 3 Rev O April 19, 217

Recommended Operating Conditions Table 3. Recommended Operating Conditions Parameter Symbol Condition Minimum Typical Maximum Units Supply Voltage V CC 2.5 3.3 5.25 V Operating Temperature Range T EP Exposed Paddle -4 +15 C RF Frequency Range Maximum Operating Input Power Port Impedance (RFC, RF1, RF2) f RF P MAX Z RF 75Ω.5 1.8 5Ω.5 1 Insertion Loss State Z S = Z L = 5Ω 75Ω System 75 5Ω System 5 a. In a 5Ω system, dbmv = dbm [5Ω] + 47. In a 75Ω system, dbmv = dbm [75Ω] + 48.75. See Figure 3 [a] GHz dbm Ω Figure 3. Maximum Operating RF Input Power (ZS = ZL = 5Ω) 217 Integrated Device Technology, Inc. 4 Rev O April 19, 217

General Specifications Table 4. General Specifications See F2972 Typical Application Circuit. Specifications apply when operated with V CC = +3.3V, T EP = +25 C, EN = HIGH, single tone signal applied at RF1 or RF2 and measured at RFC, unless otherwise noted. Parameter Symbol Condition Minimum Typical Maximum Units Logic Input High Threshold V IH V CTL, EN pins 1.17 [b] Lower of ( V CC, 3.6 ) Logic Input Low Threshold V IL V CTL, EN pins -.3.6 V Logic Current I IH, I IL V CTL, EN pins (each pin) [a] +1 µa DC Current (V CC) I CC Normal Operation 8 15 Standby (EN = LOW) 2 35 Switching Rate SW RATE 25 khz Startup Time Maximum Video Feed-Through, RFC Port T STRTUP VID FT From Standby State, 5% EN to 9% RF No Change in RF Path Change in RF Path Peak transient during switching. Z S = Z L = 75Ω. Measured with 2ns rise time, V to 3.3V (3.3V to V) control pulse applied to V CTL. 1. 1.6 V µa µs 5 mvp-p Switching Time [c] SW TIME 5% V CTL to 9% or 1% RF 1.5 3 µs a. Items in min/max columns in bold italics are guaranteed by test. b. Items in min/max columns that are not bold italics are guaranteed by design characterization. c. Measured at f RF = 1GHz. 217 Integrated Device Technology, Inc. 5 Rev O April 19, 217

Electrical Characteristics Table 5. Electrical Characteristics - 75Ω SPECIFICATION See F2972 75Ω Application Circuit. Specifications apply when operated with V CC = +3.3V, T EP = +25 C. Z S = Z L = 75Ω, EN = HIGH, single tone signal applied at RF1 or RF2 and measured at RFC, EVKit trace and connector losses are de-embedded, unless otherwise noted. Parameter Symbol Condition Minimum Typical Maximum Units Insertion Loss (RFC to RF1, RF2) Isolation (All Paths) Return Loss (RFC, RF1, RF2) (Insertion Loss States) IL ISO1 RL 2 nd Harmonic H2 3 rd Harmonic H3 Input.1dB Compression Point [d] (RFC to RF1, RF2) P.1dB f RF = 5MHz.2 5MHz < f RF 24MHz.23.43 [b] 24MHz < f RF 1.2GHz.32.52 1.2GHz < f RF 1.8GHz.34.54 f RF = 5MHz 77 5MHz < f RF 24MHz 6 24MHz < f RF 1.2GHz 44 1.2GHz < f RF 1.8GHz 4 f RF = 5MHz 35 5MHz < f RF 24MHz 3 24MHz < F RF 1.2GHz 17 1.2GHz < F RF 1.8GHz 16 f IN = 27MHz P OUT = 2dBm [c] -8-7 f IN = 24MHz P OUT = 2dBm -9 f IN = 8MHz P OUT = 2dBm -12-11 f IN = 17MHz P OUT = 2dBm -95-8 f IN = 24MHz P OUT = 2dBm -12 5 f IN = 8MHz P OUT = 2dBm -115 f RF = 5MHz 37 f RF =24MHz 37 f RF =1.8GHz 38 Composite Second Order CSO 41 dbmv / channel >1 Composite Triple Beat CTB 137 channels [e] >1 a. Items in min/max columns in bold italics are guaranteed by test. b. Items in min/max columns that are not bold italics are guaranteed by design characterization. c. dbmv = dbm [75Ω] + 48.75. d. The input.1db compression point is a linearity figure of merit. Refer to Figure 3 for the maximum operating RF input power levels. e. Total power = -7.75dBm [75Ω] + 1*log (137) = +13.62dBm [75Ω]. db db db dbc dbc dbm dbc 217 Integrated Device Technology, Inc. 6 Rev O April 19, 217

Electrical Characteristics Table 6. Electrical Characteristics - 5Ω SPECIFICATION See F2972 5 Application Circuit. Specifications apply when operated with V CC = +3.3V, T EP = +25 C. Z S = Z L = 5Ω, EN = HIGH, single tone signal applied at RF1 or RF2 and measured at RFC, EVKit trace and connector losses are de-embedded, unless otherwise noted. Parameter Symbol Condition Minimum Typical Maximum Units Insertion Loss (RFC to RF1, RF2) Isolation (RFC to RF1, RF2) Isolation (RF1 to RF2, RF2 to RF1) Return Loss (RFC, RF1, RF2) (Insertion loss states) IL ISO1 ISO2 RL f RF = 5MHz.25.45 [b] 5MHz < f RF 1GHz.33.53 1GHz < f RF 2GHz [c].36.56 [a] 2GHz < f RF 3GHz.4 3GHz < f RF 6GHz.45 6GHz < f RF 8GHz.55 8GHz < f RF 9GHz.65 9GHz < f RF 1GHz.8 5MHz < f RF 1GHz 43 48 1GHz < f RF 2GHz 36 42 2GHz < f RF 3GHz 31 37 3GHz < f RF 6GHz 27 6GHz < f RF 8GHz 22 8GHz < f RF 1GHz 18 5MHz < f RF 1GHz 4 45 1GHz < f RF 2GHz 33 38 2GHz < f RF 3GHz 29 34 3GHz < f RF 6GHz 26 6GHz < f RF 8GHz 21 8GHz < f RF 1GHz 18 5MHz < f RF 1GHz 28 1GHz < f RF 2GHz 26 2GHz < f RF 3GHz 26 3GHz < f RF 6GHz 25 6GHz < f RF 8GHz 23 8GHz < f RF 9GHz 18 9GHz < f RF 1GHz 16 a. Items in min/max columns in bold italics are guaranteed by test. b. Items in min/max columns that are not bold italics are guaranteed by design characterization. c. Minimum or maximum specification guaranteed by test at 2GHz and by design characterization over the whole frequency range. db db db db 217 Integrated Device Technology, Inc. 7 Rev O April 19, 217

Electrical Characteristics Table 7. Electrical Characteristics - 5Ω SPECIFICATION See F2972 5 Application Circuit. Specifications apply when operated with V CC = +3.3V, T EP = +25 C. Z S = Z L = 5Ω, EN = HIGH, single tone signal applied at RF1 or RF2 and measured at RFC, EVKit trace and connector losses are de-embedded, unless otherwise noted. Parameter Symbol Condition Minimum Typical Maximum Units Input.1dB Compression [c] Input IP3 (RF1, RF2 to RFC) Input IP2 (RF1, RF2 to RFC) Second Harmonic (RF1, RF2 to RFC) Third Harmonic (RF1, RF2 to RFC) Spurious Output (No RF Applied) P.1dB IIP3 IIP2 H2 H3 P SPUR1 P SPUR2 f RF = 2.4GHz 4 f RF = 6.GHz 4 f RF = 8.GHz 4 f RF = 2.4GHz P IN = +24dBm/tone 1MHz spacing f 1 = 7MHz f 2 = 1.7GHz P IN = +24dBm/tone Measure 2.4GHz product f 1 = 2.4GHz f 2 = 3.5GHz P IN = +24dBm/tone Measure 5.9GHz product dbm 77 dbm 125 12 f IN = 2.4GHz, P IN = +24dBm -9 [b] f IN = 5.9GHz, P IN = +24dBm -9-8 f IN = 2.4GHz, P IN = +24dBm -11-95 f IN = 5.9GHz, P IN = +24dBm -85 f OUT 5MHz All unused ports terminated f OUT < 5MHz All unused ports terminated a. Items in min/max columns in bold italics are guaranteed by test. b. Items in min/max columns that are not bold italics are guaranteed by design characterization. c. The input.1db compression point is a linearity figure of merit. Refer to Figure 3 for the maximum RF operating input power levels. -133-12 dbm dbc dbc dbm 217 Integrated Device Technology, Inc. 8 Rev O April 19, 217

Thermal Characteristics Table 8. Package Thermal Characteristics Parameter Symbol Value Units Junction to Ambient Thermal Resistance θ JA 12 C/W Junction to Case Thermal Resistance (Case is defined as the exposed paddle) θ JC_BOT 56 C/W Moisture Sensitivity Rating (Per J-STD-2) MSL 1 Typical Operating Conditions (TOCs) Unless otherwise noted: V CC = +3.3V EN = HIGH Z L = Z S = 75Ω Z L = Z S = 5Ω All temperatures are referenced to the exposed paddle Evaluation Kit traces and connector losses are de-embedded 217 Integrated Device Technology, Inc. 9 Rev O April 19, 217

Typical Performance Characteristics - 75Ω Performance Figure 4. RF1 to RFC Insertion Loss Figure 5. RF2 to RFC Insertion Loss.. -.5 -.1 -.5 -.1 Insertion Loss (db) -.15 -.2 -.25 -.3 -.35 Insertion Loss (db) -.15 -.2 -.25 -.3 -.35 -.4 -.4 -.45 -.45 -.5..5 1. 1.5 2. 2.5 3. Figure 6. RF1 to RFC Isolation [RF2 On State] -.5..5 1. 1.5 2. 2.5 3. Figure 7. RF2 to RFC Isolation [RF1 On State] Isolation (db) -3-4 -5-6 Isolation (db) -3-4 -5-6 -7-7 -8-8 -9..5 1. 1.5 2. 2.5 3. Figure 8. RF1 to RF2 Isolation [RF1 On State] -9..5 1. 1.5 2. 2.5 3. Figure 9. RF1 to RF2 Isolation [RF2 On State] Isolation (db) -3-4 -5-6 Isolation (db) -3-4 -5-6 -7-7 -8-8 -9..5 1. 1.5 2. 2.5 3. -9..5 1. 1.5 2. 2.5 3. 217 Integrated Device Technology, Inc. 1 Rev O April 19, 217

Typical Performance Characteristics - 75Ω Performance Figure 1. RFC Return Loss [RF1 On State] Figure 11. RFC Return Loss [RF2 On State] -5-5 Match (db) -15-25 Match (db) -15-25 -3-3 -35-35 -4..5 1. 1.5 2. 2.5 3. Figure 12. RF1 Return Loss [RF1 On State] -4..5 1. 1.5 2. 2.5 3. Figure 13. RF2 Return Loss [RF2 On State] -5-5 Match (db) -15-25 Match (db) -15-25 -3-3 -35-35 -4..5 1. 1.5 2. 2.5 3. -4..5 1. 1.5 2. 2.5 3. 217 Integrated Device Technology, Inc. 11 Rev O April 19, 217

Typical Performance Characteristics - 5Ω Performance Figure 14. RF1 to RFC Insertion Loss Figure 15. RF2 to RFC Insertion Loss.. -.1 -.2 -.1 -.2-4C / 2.5V -4C / 3.3V -4C / 5.25V 25C / 2.5V 25C / 3.3V 25C / 5.25V 15C / 2.5V 15C / 3.3V 15C / 5.25V Insertion Loss (db) -.3 -.4 -.5 -.6 -.7 Insertion Loss (db) -.3 -.4 -.5 -.6 -.7 -.8 -.8 -.9 -.9-1. 1 2 3 4 5 6 7 8 9 1 Figure 16. RF1 to RFC Isolation [RF2 On State] -1. 1 2 3 4 5 6 7 8 9 1 Figure 17. RF2 to RFC Isolation [RF1 On State] Isolation (db) -3-4 -5-6 Isolation (db) -3-4 -5-6 -7-7 -8-8 -9 1 2 3 4 5 6 7 8 9 1 Figure 18. RF1 to RF2 Isolation [RF1 On State] -9 1 2 3 4 5 6 7 8 9 1 Figure 19. RF1 to RF2 Isolation [RF2 On State] Isolation (db) -3-4 -5-6 Isolation (db) -3-4 -5-6 -7-7 -8-8 -9 1 2 3 4 5 6 7 8 9 1-9 1 2 3 4 5 6 7 8 9 1 217 Integrated Device Technology, Inc. 12 Rev O April 19, 217

Typical Performance Characteristics - 5Ω Performance Figure 2. RFC Return Loss [RF1 On State] Figure 21. RFC Return Loss [RF2 On State] -5-5 -15-15 Match (db) -25-3 Match (db) -25-3 -35-35 -4-4 -45-45 -5 1 2 3 4 5 6 7 8 9 1 Figure 22. RF1 Return Loss [RF1 On State] -5 1 2 3 4 5 6 7 8 9 1 Figure 23. RF2 Return Loss [RF2 On State] -5-5 -15-15 Match (db) -25-3 Match (db) -25-3 -35-35 -4-4 -45-45 -5 1 2 3 4 5 6 7 8 9 1 Figure 24. Switching Time [Isolation to Insertion Loss State] -5 1 2 3 4 5 6 7 8 9 1 Figure 25. Switching Time [Insertion Loss to Isolation State] 217 Integrated Device Technology, Inc. 13 Rev O April 19, 217

Control Mode Table 9. Switch Control Truth Table V CTL (pin 7) EN (pin 8) Switch State LOW HIGH RFC to RF1 Insertion Loss State HIGH HIGH RFC to RF2 Insertion Loss State Don t Care LOW Standby Application Information Power Supplies A common V CC power supply should be used for all pins requiring DC power. All supply pins should be bypassed with external capacitors to minimize noise and fast transients. Supply noise can degrade noise figure and fast transients can trigger ESD clamps and cause them to fail. Supply voltage change or transients should have a slew rate smaller than 1V / 2µs. In addition, all control pins should remain at V (+/-.3V) while the supply voltage ramps up or while it returns to zero. Control Pin Interface If control signal integrity is a concern and clean signals cannot be guaranteed due to overshoot, undershoot, ringing, etc., the following circuit at the input of each control pin is recommended. This applies to control pins 7 and 8 as shown below. Figure 26. Control Pin Interface Schematic GND RF2 GND 12 11 1 GND 1 9 VCC RFC GND 2 3 EP F2972 8 7 2 pf 5kΩ EN 4 5 6 5kΩ GND RF1 GND 2 pf VCTL 217 Integrated Device Technology, Inc. 14 Rev O April 19, 217

75Ω Evaluation Kit Picture Figure 27. Top View (75Ω) Figure 28. Bottom View (75Ω) 217 Integrated Device Technology, Inc. 15 Rev O April 19, 217

5Ω Evaluation Kit Picture Figure 29. Top View (5Ω) Figure 3. Bottom View (5Ω) 217 Integrated Device Technology, Inc. 16 Rev O April 19, 217

75Ω Evaluation Kit / Applications Circuit Figure 31. Electrical Schematic (75Ω) 217 Integrated Device Technology, Inc. 17 Rev O April 19, 217

5Ω Evaluation Kit / Applications Circuit Figure 32. Electrical Schematic (5Ω) 217 Integrated Device Technology, Inc. 18 Rev O April 19, 217

Table 1. 75Ω Bill of Material (BOM) Part Reference QTY Description Manufacturer Part # Manufacturer C1 1.1µF ±1%, 16V, X7R, Ceramic Capacitor (42) GRM155R71C14KA88D Murata C2, C4 2 1pF ±5% 5V, CG, Ceramic Capacitor (42) GRM1555C1H11JA1D Murata C3 1.1µF ±5% 5V, X7R, Ceramic Capacitor (63) GRM188R71H13JA1D Murata R2, R3 2 1 1/1W, Resistor (42) ERJ-2RKF1X Panasonic J1 J5 5 F-Type Edge Mount 222181 Amphenol RF J6 1 Conn Header Vert 5x1 Pos Gold 6825HLF Amphenol FCI U1 1 SP2T Switch 2mm x 2mm 12-pin TQFN F2972NEGK IDT 1 Printed Circuit Board F2972 75 PCB IDT Table 11. 5Ω Bill of Material (BOM) Part Reference QTY Description Manufacturer Part # Manufacturer C1 C7 Not Installed (42) R1 R3 3 1/1W, Resistor (42) ERJ-2GERX Panasonic J1 J5 5 SMA Edge Mount 142-761-881 Cinch Connectivity J6 1 Conn Header 1 Pos.1 Str 15 Au 6862-21HLF Amphenol FCI TP1, TP2, TP3, TP4, TP5 Not Installed Test Point Loop U1 1 SP2T Switch 2mm x 2mm 12-pin TQFN F2972NEGK IDT 1 Printed Circuit Board F2972 5 PCB IDT 217 Integrated Device Technology, Inc. 19 Rev O April 19, 217

Evaluation Kit (EVKit) Operation External Supply Setup Set up a V CC power supply in the voltage range of 2.5V to 5.25V with the power supply output disabled. For the 75 EVKit, connect the disabled Vcc supply connection to J6 pin 2 and GND to J6 pins 1 or 5. For the 5 EVKit, connect the disabled Vcc supply connection to J6 pin 3 and GND to J6 pin 1, 2, 4, 6, 8, 9, or 1. Logic Control Setup With the logic control lines disabled set the HIGH and LOW logic levels to satisfy the levels stated in the electrical specifications table. For the 75 EVKit, connect the disabled logic control lines to J6 EN (pin 3) and V CTL (pin 4). For the 5 EVKit, connect the disabled logic control lines to J6 EN / LS (pin 5) and V CTL (pin 7). See Table 9 for the logic truth table. Turn On Procedure Setup the supplies and EVKit as noted in the External Supply Setup and Logic Control Setup sections above. Enable the V CC supply. Enable the logic control signals. Set the logic setting to achieve the desired Table 9 configuration. Note that external control logic should not be applied without V CC being present. Turn Off Procedure Set the logic control pins to a logic LOW. Disable the V CC supply. 217 Integrated Device Technology, Inc. 2 Rev O April 19, 217

Package Drawings Figure 33. Package Outline Drawing NEG12 PSC-4642 217 Integrated Device Technology, Inc. 21 Rev O April 19, 217

Recommended Land Pattern Figure 34. Recommended Land Pattern NEG12 PSC-4642 217 Integrated Device Technology, Inc. 22 Rev O April 19, 217

Marking Diagram 2972 YW** Line 1-2972 = Abbreviated part number. Line 2 - Y = Year code. Line 2 - W = Work week code. Line 2 - ** = Sequential alpha for lot traceability. Ordering Information Orderable Part Number Package MSL Rating Shipping Packaging Temperature F2972NEGK 2mm x 2mm x.5mm 12-VFQFP-N MSL1 Cut Reel -4 C to +15 C F2972NEGK8 2mm x 2mm x.5mm 12-VFQFP-N MSL1 Tape and Reel -4 C to +15 C F2972EVBI-75OHM 75Ω Evaluation Board F2972EVBI-5OHM 5Ω Evaluation Board 217 Integrated Device Technology, Inc. 23 Rev O April 19, 217

Revision History Revision Revision Date Description of Change Rev O 217-Apr-19 Initial Release Corporate Headquarters 624 Silver Creek Valley Road San Jose, CA 95138 www.idt.com Sales 1-8-345-715 or 48-284-82 Fax: 48-284-2775 www.idt.com/go/sales Tech Support www.idt.com/go/support DISCLAIMER Integrated Device Technology, Inc. (IDT) and its affiliated companies (herein referred to as IDT ) reserve the right to modify the products and/or specifications described herein at any time, without notice, at IDT's sole discretion. Performance specifications and operating parameters of the described products are determined in an independent state and are not guaranteed to perform the same way when installed in customer products. The information contained herein is provided without representation or warranty of any kind, whether express or implied, including, but not limited to, the suitability of IDT's products for any particular purpose, an implied warranty of merchantability, or non-infringement of the intellectual property rights of others. This document is presented only as a guide and does not convey any license under intellectual property rights of IDT or any third parties. IDT's products are not intended for use in applications involving extreme environmental conditions or in life support systems or similar devices where the failure or malfunction of an IDT product can be reasonably expected to significantly affect the health or safety of users. Anyone using an IDT product in such a manner does so at their own risk, absent an express, written agreement by IDT. Integrated Device Technology, IDT and the IDT logo are trademarks or registered trademarks of IDT and its subsidiaries in the United States and other countries. Other trademarks used herein are the property of IDT or their respective third party owners. For datasheet type definitions and a glossary of common terms, visit www.idt.com/go/glossary. All contents of this document are copyright of Integrated Device Technology, Inc. All rights reserved 217 Integrated Device Technology, Inc. 24 Rev O April 19, 217

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