BCR16PM-1L Triac Medium Power Use REJG6-1 Rev.1. ug.. Features I T (RMS) : 16 V DRM : 6 V I FGTI, I RGTI, I RGTⅢ : m ( m) Note Viso : 1 V Insulated Type Planar Passivation Type UL Recognized : Yellow Card No. E9 File No. E81 Outline TO-F 1 1. T 1 Terminal. T Terminal. Gate Terminal 1 pplications Contactless C switch, light dimmer, electronic flasher unit, hair drier, control of household equipment such as TV sets, refrigerator, washing machine, electric fan, and other general controlling devices Maximum Ratings Parameter Symbol Voltage class Repetitive peak off-state voltage Note1 V DRM 6 V Non-repetitive peak off-state voltage Note1 V DSM V 1 Unit Rev.1., ug.., page 1 of 1
BCR16PM-1L Parameter Symbol Ratings Unit Conditions RMS on-state current I T (RMS) 16 Commercial frequency, sine full wave 6 conduction, Tc = 1 C Surge on-state current I TSM 16 6Hz sinewave 1 full cycle, peak value, non-repetitive I t for fusing I t 16. s Value corresponding to 1 cycle of half wave 6Hz, surge on-state current Peak gate power dissipation P GM. W verage gate power dissipation P G (V). W Peak gate voltage V GM 1 V Peak gate current I GM Junction temperature Tj to +1 C Storage temperature Tstg to +1 C Mass. g Typical value Isolation voltage Viso 1 V Ta = C, C 1 minute, T 1 T G terminal to case Notes: 1. Gate open. Electrical Characteristics Parameter Symbol Min. Typ. Max. Unit Test conditions Repetitive peak off-state current I DRM. m Tj = 1 C, V DRM applied On-state voltage V TM 1. V Tc = C, I TM =, Instantaneous measurement Gate trigger voltage Note Gate trigger current Note Ι V FGTΙ 1. V ΙΙ V RGTΙ 1. V ΙΙΙ V RGTΙΙΙ 1. V Ι I FGTΙ Note m ΙΙ I RGTΙ Note m ΙΙΙ I RGTΙΙΙ Note m Tj = C, V D = 6 V, R L = 6 Ω, R G = Ω Tj = C, V D = 6 V, R L = 6 Ω, R G = Ω Gate non-trigger voltage V GD. V Tj = 1 C, V D = 1/ V DRM Thermal resistance R th (j-c). C/W Junction to case Note Critical-rate of rise of off-state (dv/dt)c 1 V/µs Tj = 1 C commutating voltage Note Notes:. Measurement using the gate trigger characteristics measurement circuit.. The contact thermal resistance R th (c-f) in case of greasing is. C/W.. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.. High sensitivity (I GT m) is also available. (I GT item: 1) Test conditions 1. Junction temperature Tj = 1 C. Rate of decay of on-state commutating current (di/dt)c = 8. /ms. Peak off-state voltage V D = V Commutating voltage and current waveforms (inductive load) Supply Voltage Main Current Main Voltage (dv/dt)c (di/dt)c V D Rev.1., ug.., page of 1
BCR16PM-1L Performance Curves Maximum On-State Characteristics Rated Surge On-State Current On-State Current () 1 1 1 1 Tj = 1 C Tj = C 1..8 1. 1.6...8..6.. Surge On-State Current () 18 16 1 1 1 8 6 1 1 1 1 On-State Voltage (V) Conduction (Cycles at 6Hz) Gate Voltage (V) Gate Characteristics (I, II and III) V GM = 1V PG(V) =.W 1 1 P GM = W I GM = V GT = 1.V 1 1 1 I FGT I, IRGT I, I RGT III V GD =.V 1 1 1 1 1 1 (%) Gate Trigger Current (Tj = t C) Gate Trigger Current (Tj = C) 1 1 Gate Trigger Current vs. I FGT I, I RGT I I RGT III 1 6 1 6 8 111 Gate Current (m) 1 (%) Gate Trigger Voltage (Tj = t C) Gate Trigger Voltage (Tj = C) 1 1 Gate Trigger Voltage vs. 1 6 1 6 8 111 Transient Thermal Impedance ( C/W) Maximum Transient Thermal Impedance Characteristics (Junction to case) 1. 1...... 1. 1.. 1 1 1 1 1 1 Conduction (Cycles at 6Hz) Rev.1., ug.., page of 1
BCR16PM-1L Maximum Transient Thermal Impedance Characteristics (Junction to ambient) Maximum On-State Power Dissipation Transient Thermal Impedance ( C/W) 1 No Fins 1 1 1 1 1 1 1 1 1 1 1 1 On-State Power Dissipation (W) 1 1 6 Conduction Resistive, inductive loads 6 8 1 1 1 16 18 Conduction (Cycles at 6Hz) RMS On-State Current () llowable Case Temperature vs. RMS On-State Current llowable mbient Temperature vs. RMS On-State Current Case Temperature ( C) 16 1 1 1 8 6 Curves apply regardless of conduction angle 6 Conduction Resistive, inductive loads 6 8 1 1 1 16 18 mbient Temperature ( C) 16 1 1 1 8 6 ll fins are black painted aluminum and greased Natural convection 1 1 t. 1 1 t. 6 6 t. 6 8 1 1 1 16 18 RMS On-State Current () RMS On-State Current () mbient Temperature ( C) 16 1 1 1 8 6 llowable mbient Temperature vs. RMS On-State Current Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads. 1. 1..... RMS On-State Current (). 1 (%) Repetitive Peak Off-State Current (Tj = t C) Repetitive Peak Off-State Current (Tj = C) 1 1 1 Repetitive Peak Off-State Current vs. 1 6 6 8 111 Rev.1., ug.., page of 1
BCR16PM-1L Holding Current vs. Latching Current vs. 1 (%) Holding Current (Tj = t C) Holding Current (Tj = C) 1 1 1 6 1 1 6 8 111 8 1 16 Latching Current (m) 1 1 1 1 Distribution T +, G T +, G+ T, G 1 (%) Breakover Voltage (Tj = t C) Breakover Voltage (Tj = C) 16 1 1 1 8 6 Breakover Voltage vs. 6 6 8 1 1 1 1 (%) Breakover Voltage (dv/dt = xv/µs) Breakover Voltage (dv/dt = 1V/µs) 16 1 1 1 8 6 Breakover Voltage vs. Rate of Rise of Off-State Voltage I Quadrant Tj = 1 C III Quadrant 1 1 1 1 1 Rate of Rise of Off-State Voltage (V/µs) Commutation Characteristics Gate Trigger Current vs. Gate Current Pulse Width Critical Rate of Rise of Off-State Commutating Voltage (V/µs) 1 1 Tj = 1 C I T = τ = µs V D = V f = Hz Minimum Characteristics Value Main Voltage (dv/dt)c V D Main Current IT (di/dt)c τ I Quadrant 1 III Quadrant 1 1 1 1 1 (%) Gate Trigger Current (tw) Gate Trigger Current (DC) 1 1 I FGT I I RGT I I RGT III 1 1 1 1 1 1 Rate of Decay of On-State Commutating Current (/ms) Gate Current Pulse Width (µs) Rev.1., ug.., page of 1
BCR16PM-1L Gate Trigger Characteristics Test Circuits 6Ω 6Ω 6V V Ω 6V V Ω Test Procedure I Test Procedure II 6Ω 6V V Ω Test Procedure III Rev.1., ug.., page 6 of 1
BCR16PM-1L Package Dimensions TO-F EIJ Package Code JEDEC Code Mass (g) (reference value) Lead Material Conforms. Cu alloy 1. max..8 1. 8. 1. φ. ±. 1. min.6 1. max.8....6 Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified.. Symbol 1 b D E e x y Dimension in Millimeters Min Typ Max y 1 ZD ZE Order Code Lead form Standard packing Quantity Standard order code Standard order code example Straight type Vinyl sack 1 Type name + BCR16PM-1L Lead form Plastic Magazine (Tube) Type name + Lead forming code BCR16PM-1L-8 Note : Please confirm the specification about the shipping in detail. Rev.1., ug.., page of 1
BCR16PM-1L (The product guaranteed maximum junction temperature of 1 C) BCR16PM-1L Triac Medium Power Use (The product guaranteed maximum junction temperature of 1 C) Features I T (RMS) : 16 V DRM : 6 V I FGTI, I RGTI, I RGTⅢ : m ( m) Note Viso : 1 V Insulated Type Planar Passivation Type Outline TO-F 1 1. T 1 Terminal. T Terminal. Gate Terminal 1 pplications Contactless C switch, light dimmer, electronic flasher unit, hair drier, control of household equipment such as TV sets, refrigerator, washing machine, electric fan, and other general controlling devices Warning 1. Refer to the recommended circuit values around the triac before using.. Be sure to exchange the specification before using. Otherwise, general triacs with the maximum junction temperature of 1 C will be supplied. Maximum Ratings Parameter Symbol Voltage class Repetitive peak off-state voltage Note1 V DRM 6 V Non-repetitive peak off-state voltage Note1 V DSM V 1 Unit Rev.1., ug.., page 8 of 1
BCR16PM-1L (The product guaranteed maximum junction temperature of 1 C) Parameter Symbol Ratings Unit Conditions RMS on-state current I T (RMS) 16 Commercial frequency, sine full wave 6 conduction, Tc = 96 C Surge on-state current I TSM 16 6Hz sinewave 1 full cycle, peak value, non-repetitive I t for fusing I t 16. s Value corresponding to 1 cycle of half wave 6Hz, surge on-state current Peak gate power dissipation P GM. W verage gate power dissipation P G (V). W Peak gate voltage V GM 1 V Peak gate current I GM Junction temperature Tj to +1 C Storage temperature Tstg to +1 C Mass. g Typical value Isolation voltage Viso 1 V Ta = C, C 1 minute, T 1 T G terminal to case Notes: 1. Gate open. Electrical Characteristics Parameter Symbol Min. Typ. Max. Unit Test conditions Repetitive peak off-state current I DRM. m Tj = 1 C, V DRM applied On-state voltage V TM 1. V Tc = C, I TM =, Instantaneous measurement Gate trigger voltage Note Ι V FGTΙ 1. V Tj = C, V D = 6 V, R L = 6 Ω, ΙΙ V RGTΙ 1. V R G = Ω Gate trigger current Note ΙΙΙ V RGTΙΙΙ 1. V Ι I FGTΙ Note m ΙΙ I RGTΙ Note m ΙΙΙ I RGTΙΙΙ Note m Tj = C, V D = 6 V, R L = 6 Ω, R G = Ω Gate non-trigger voltage V GD./.1 V Tj = 1 C/1 C, V D = 1/ V DRM Thermal resistance R th (j-c). C/W Junction to case Note Critical-rate of rise of off-state (dv/dt)c 1/1 V/µs Tj = 1 C/1 C commutating voltage Note Notes:. Measurement using the gate trigger characteristics measurement circuit.. The contact thermal resistance R th (c-f) in case of greasing is. C/W.. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.. High sensitivity (I GT m) is also available. (I GT item: 1) Test conditions 1. Junction temperature Tj = 1 C/1 C. Rate of decay of on-state commutating current (di/dt)c = 8. /ms. Peak off-state voltage V D = V Commutating voltage and current waveforms (inductive load) Supply Voltage Main Current Main Voltage (dv/dt)c (di/dt)c V D Rev.1., ug.., page 9 of 1
BCR16PM-1L (The product guaranteed maximum junction temperature of 1 C) Performance Curves Maximum On-State Characteristics Rated Surge On-State Current On-State Current () 1 1 1 1 Tj = C Tj = 1 C 1. 1. 1...... Surge On-State Current () 18 16 1 1 1 8 6 1 1 1 1 On-State Voltage (V) Conduction (Cycles at 6Hz) Gate Voltage (V) 1 1 Gate Characteristics (I, II and III) V GM = 1V V GT = 1.V P G(V) =.W P GM = W I GM = 1 1 1 I FGT I, IRGT I, IRGT III V GD =.1V 1 1 1 1 1 1 (%) Gate Trigger Current (Tj = t C) Gate Trigger Current (Tj = C) 1 1 Gate Trigger Current vs. I FGT I, I RGT I I RGT III 1 1 6 6 8 111 16 Gate Current (m) 1 (%) Gate Trigger Voltage (Tj = t C) Gate Trigger Voltage (Tj = C) 1 1 Gate Trigger Voltage vs. 1 1 6 6 8 11116 Transient Thermal Impedance ( C/W) Maximum Transient Thermal Impedance Characteristics (Junction to case) 1. 1...... 1. 1.. 1 1 1 1 1 1 Conduction (Cycles at 6Hz) Rev.1., ug.., page 1 of 1
BCR16PM-1L (The product guaranteed maximum junction temperature of 1 C) Maximum Transient Thermal Impedance Characteristics (Junction to ambient) Maximum On-State Power Dissipation Transient Thermal Impedance ( C/W) 1 No Fins 1 1 1 1 1 1 1 1 1 1 1 1 On-State Power Dissipation (W) 1 1 6 Conduction Resistive, inductive loads 6 8 1 1 1 16 18 Conduction (Cycles at 6Hz) RMS On-State Current () llowable Case Temperature vs. RMS On-State Current llowable mbient Temperature vs. RMS On-State Current Case Temperature ( C) 16 1 1 1 8 6 Curves apply regardless of conduction angle 6 Conduction Resistive, inductive loads 6 8 1 1 1 16 18 mbient Temperature ( C) 16 1 1 1 8 6 Curves apply regardless of conduction angle Resistive, inductive loads Natural convection ll fins are black painted aluminum and greased 1 1 t. 1 1 t. 6 6 t. 6 8 1 1 1 16 18 RMS On-State Current () RMS On-State Current () mbient Temperature ( C) 16 1 1 1 8 6 llowable mbient Temperature vs. RMS On-State Current Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads. 1. 1..... RMS On-State Current (). 1 (%) Repetitive Peak Off-State Current (Tj = t C) Repetitive Peak Off-State Current (Tj = C) Repetitive Peak Off-State Current vs. 1 1 1 1 6 6 8 11116 Rev.1., ug.., page 11 of 1
BCR16PM-1L (The product guaranteed maximum junction temperature of 1 C) Holding Current vs. Latching Current vs. 1 (%) Holding Current (Tj = t C) Holding Current (Tj = C) 1 1 Latching Current (m) 1 1 1 1 Distribution T +, G T +, G+ T, G 11 1 6 6 8 11116 8 1 16 1 (%) Breakover Voltage (Tj = t C) Breakover Voltage (Tj = C) 16 1 1 1 8 6 Breakover Voltage vs. 6 6 8 11116 1 (%) Breakover Voltage (dv/dt = xv/µs) Breakover Voltage (dv/dt = 1V/µs) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=1 C) 16 1 1 1 8 6 I Quadrant Tj = 1 C III Quadrant 1 1 1 1 1 Rate of Rise of Off-State Voltage (V/µs) 1 (%) Breakover Voltage (dv/dt = xv/µs) Breakover Voltage (dv/dt = 1V/µs) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=1 C) 1 8 6 1 1 1 1 1 Rate of Rise of Off-State Voltage (V/µs) Critical Rate of Rise of Off-State Commutating Voltage (V/µs) Commutation Characteristics (Tj=1 C) 16 1 Main Voltage 1 Tj = 1 C (dv/dt)c V D Main Current IT (di/dt)c 1 τ I Quadrant III Quadrant 1 1 1 Minimum Characteristics Value Tj = 1 C I T = τ = µs V D = V f = Hz III Quadrant I Quadrant 1 1 1 Rate of Decay of On-State Commutating Current (/ms) Rev.1., ug.., page 1 of 1
BCR16PM-1L (The product guaranteed maximum junction temperature of 1 C) Commutation Characteristics (Tj=1 C) Gate Trigger Current vs. Gate Current Pulse Width Critical Rate of Rise of Off-State Commutating Voltage (V/µs) 1 Main Voltage (dv/dt)c V D Main Current IT (di/dt)c τ 1 1 1 I Quadrant Tj = 1 C I T = τ = µs V D = V f = Hz III Quadrant Minimum Characteristics Value 1 1 1 1 (%) Gate Trigger Current (tw) Gate Trigger Current (DC) 1 1 I FGT I I RGT I I RGT III 1 1 1 1 1 1 Rate of Decay of On-State Commutating Current (/ms) Gate Current Pulse Width (µs) Gate Trigger Characteristics Test Circuits Recommended Circuit Values round The Triac 6Ω 6Ω Load C 1 6V Ω V Test Procedure I 6V V Test Procedure II Ω R 1 C 1 =.1 to.µf R 1 = to 1Ω C R C =.1µF R = 1Ω 6Ω 6V V Ω Test Procedure III Rev.1., ug.., page 1 of 1
BCR16PM-1L (The product guaranteed maximum junction temperature of 1 C) Package Dimensions TO-F EIJ Package Code JEDEC Code Mass (g) (reference value) Lead Material Conforms. Cu alloy 1. max..8 1. 8. 1. φ. ±. 1. min.6 1. max.8....6 Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified.. Symbol 1 b D E e x y Dimension in Millimeters Min Typ Max y 1 ZD ZE Order Code Lead form Standard packing Quantity Standard order code Standard order code example Straight type Vinyl sack 1 Type name +B BCR16PM-1LB Lead form Plastic Magazine (Tube) Type name +B Lead forming code BCR16PM-1LB-8 Note : Please confirm the specification about the shipping in detail. Rev.1., ug.., page 1 of 1
Sales Strategic Planning Div. Nippon Bldg., -6-, Ohte-machi, Chiyoda-ku, Tokyo 1-, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.. ll information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com).. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein.. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. ny diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESS SLES OFFICES http://www.renesas.com Renesas Technology merica, Inc. Holger Way, San Jose, C 91-168, U.S. Tel: <1> (8) 8- Fax: <1> (8) 8-1 Renesas Technology Europe Limited. Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 FH, United Kingdom Tel: <> (168) 8 1, Fax: <> (168) 8 9 Renesas Technology Europe GmbH Dornacher Str., D-86 Feldkirchen, Germany Tel: <9> (89) 8, Fax: <9> (89) 99 11 Renesas Technology Hong Kong Ltd. /F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong Tel: <8> 6-6688, Fax: <8> -686 Renesas Technology Taiwan Co., Ltd. FL 1, #99, Fu-Hsing N. Rd., Taipei, Taiwan Tel: <886> () 1-888, Fax: <886> () 1-999 Renesas Technology (Shanghai) Co., Ltd. 6/F., Ruijin Building, No. Maoming Road (S), Shanghai, China Tel: <86> (1) 6-11, Fax: <86> (1) 61-9 Renesas Technology Singapore Pte. Ltd. 1, Harbour Front venue, #6-1, Keppel Bay Tower, Singapore 986 Tel: <6> 61-, Fax: <6> 68-81. Renesas Technology Corp., ll rights reserved. Printed in Japan. Colophon.1.