TSM38N3PQ33 N-Channel Power MOSFET 3V, 78A, 3.8mΩ FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU and in accordance to WEEE 22/96/EC Halogen-free according to IEC 6249-2-2 KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT V DS 3 V R DS(on) V GS = V 3.8 (max) V GS = 4.5V 5.5 mω Q g 24 nc APPLICATIONS DC-DC Converters Battery Power Management ORing FET/Load Switching PDFN33 Note: MSL (Moisture Sensitivity Level) per J-STD-2 ABSOLUTE MAXIMUM RATINGS (T A = 25 C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 3 V Gate-Source Voltage V GS ±2 V Continuous Drain Current (Note ) T C = 25 C 78 I D T A = 25 C 9 Pulsed Drain Current I DM 32 A Single Pulse Avalanche Current (Note 2) I AS 26 A Single Pulse Avalanche Energy (Note 2) E AS mj Total Power Dissipation Total Power Dissipation T C = 25 C P D 39 T C = 25 C 7.8 T A = 25 C P D 2.4 T A = 25 C.5 Operating Junction and Storage Temperature Range T J, T STG - 55 to +5 C THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Case Thermal Resistance R ӨJC 3.2 C/W Junction to Ambient Thermal Resistance R ӨJA 53 C/W Thermal Performance Note: R ӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. R ӨJA is guaranteed by design while R ӨCA is determined by the user s board design. A W W Version: B6
TSM38N3PQ33 ELECTRICAL SPECIFICATIONS (T A = 25 C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage V GS = V, I D = 25µA BV DSS 3 -- -- V Gate Threshold Voltage V GS = V DS, I D = 25µA V GS(TH).2.6 2.5 V Gate-Source Leakage Current V GS = ±2V, V DS = V I GSS -- -- ± na Drain-Source Leakage Current Drain-Source On-State Resistance (Note 3) V GS = V, V DS = 3V V GS = V, V DS = 3V T J = 25 C V GS = V, I D = 9A I DSS R DS(on) -- -- -- -- -- 3 3.8 V GS = 4.5V, I D = 6A -- 4 5.5 Forward Transconductance (Note 3) V DS = 5V, I D = 9A g fs -- 48 -- S (Note 4) Dynamic Total Gate Charge V GS = V, V DS = 5V, I D = 9A Q g -- 48 -- Total Gate Charge Q g -- 24 -- V GS = 4.5V, V DS = 5V, Gate-Source Charge Q gs -- 6.9 -- I D = 6A Gate-Drain Charge Q gd -- -- Input Capacitance C iss -- 2557 -- V GS = V, V DS = 5V Output Capacitance C oss -- 38 -- f =.MHz Reverse Transfer Capacitance C rss -- 276 -- Gate Resistance f =.MHz R g.5.5 3 Ω Switching (Note 4) Turn-On Delay Time t d(on) -- -- Turn-On Rise Time V GS = V, V DS = 5V, t r -- 8 -- Turn-Off Delay Time I D = 9A, R G = 2Ω, t d(off) -- 33 -- Turn-Off Fall Time t f -- 65 -- Source-Drain Diode Forward Voltage (Note 3) V GS = V, I S = 9A V SD -- -- V Reverse Recovery Time I S = 9A, t rr -- 33 -- ns Reverse Recovery Charge di/dt = A/μs Q rr -- 9 -- nc Notes:. Silicon limited current only. 2. L =.3mH, V GS = V, V DD = 25V, R G = 25Ω, I AS = 26A, Starting T J = 25 C 3. Pulse test: Pulse Width 3µs, duty cycle 2%. 4. Switching time is essentially independent of operating temperature. µa mω nc pf ns ORDERING INFORMATION PART NO. PACKAGE PACKING TSM38N3PQ33 RGG PDFN33 5,pcs / 3 Reel 2 Version: B6
(Normalized) ID, Drain Current (A) ID, Drain Current (A) TSM38N3PQ33 CHARACTERISTICS CURVES (T A = 25 C unless otherwise noted) 4 Output Characteristics 4 Transfer Characteristics 32 24 V GS =V V GS =7V V GS =5V V GS =4.5V V GS =4V V GS =3.5V V GS =3V 32 24 25 6 6 RDS(ON), Drain-Source On-Resistance (Ω) RDS(on), Drain-Source On-Resistance 8.8.7.6.5.4.3.2. 2 3 4 V DS, Drain to Source Voltage (V) On-Resistance vs. Drain Current 8 6 24 32 4 I D, Drain Current (A) On-Resistance vs. Junction Temperature.8.6.4.2.8 V GS =V I D =9A V GS =4.5V V GS =V.6-75 -5-25 25 5 75 25 5 T J, Junction Temperature ( C) VGS, Gate to Source Voltage (V) RDS(on), Drain-Source On-Resistance (Ω) 8 5-55 2 3 4 V GS, Gate to Source Voltage (V) 8 6 4 2.2.5..5 Gate-Source Voltage vs. Gate Charge V DS =5V I D =9A 2 3 4 5 Q g, Gate Charge (nc) On-Resistance vs. Gate-Source Voltage I D =9A 2 4 6 8 V GS, Gate to Source Voltage (V) 3 Version: B6
ID, Drain Current (A) IS, Reverse Drain Current (A) C, Capacitance (pf) Drain-Source Breakdown Voltage TSM38N3PQ33 CHARACTERISTICS CURVES (T A = 25 C unless otherwise noted) 35 Capacitance vs. Drain-Source Voltage.2 BV DSS vs. Junction Temperature 3 25 2 5 5 COSS CISS BVDSS (Normalized)..9 I D =ma CRSS.8 5 5 2 25 3-75 -5-25 25 5 75 25 5 V DS, Drain to Source Voltage (V) T J, Junction Temperature ( C) Maximum Safe Operating Area, Junction-to-Case Source-Drain Diode Forward Current vs. Voltage R DS(ON) us us 5 25-55 SINGLE PULSE R ӨJC =3.2 C/W ms T C =25 C ms DC. V DS, Drain to Source Voltage (V)..2.4.6.8.2 V SD, Body Diode Forward Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance, ZӨJC. Duty=.5 Duty=.2 Duty=. Duty=.5 Duty=.2 Duty=. Single SINGLE PULSE R ӨJC =3.2 C/W Notes: Duty = t / t 2 T J = T C + P DM x Z ӨJC x R ӨJC...... t, Square Wave Pulse Duration (sec) 4 Version: B6
TSM38N3PQ33 PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) PDFN33 SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM 38N3 YML Y = Year Code M = Month Code O =Jan P =Feb Q =Mar R =Apr ` S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec L = Lot Code (~9, A~Z) 5 Version: B6
TSM38N3PQ33 Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: B6