N/C GND LOIN GND N/C N/C N/C N/C. VLOA1 VLOA2 N/C N/C Vc1 Vc2 Vg2 VMPA. Product Description. Ordering Information

Similar documents
Absolute Maximum Ratings Parameter Rating Unit V D1, V D2, V D3 +8 V V G 0 V Junction Temperature C Continuous P DISS (T = ) C/W (derate 37 mw/ C abov

VCC1 GND IN GND LOP LON GND GND. Product Description. GaAs HBT GaAs MESFET InGaP HBT

RFFM V to 4.0V, 450MHz to 470MHz Transmit/Receive Front End Module

SGA2363ZDC to 5000MHz, Cascadable. SiGe HBT. MMIC Amplifier. Frequency (GHz) 5000 MHz >10dB

SBB MHz to 6000MHz InGaP HBT ACTIVE BIAS GAIN BLOCK. Features. Product Description. Applications

SGA3363Z. = 35 ma (Typ.) Frequency (GHz) T L MHz >10dB 255 C/W

Gain and Return Loss vs Frequency. s22. Frequency (GHz)

SGL0363Z. 5MHz to 2000MHz Low Noise Amplifier. Germanium. Simplified Device Schematic. Vpc. Narrow-band Matching Network. Gnd

RF V TO 4.0V, 915MHz TRANSMIT/RECEIVE MODULE

RFVC1800 Wideband MMIC VCO with Buffer Amplifier 8GHz to 12GHz

RF V TO 3.6V, 2.4GHz FRONT END MODULE

RFGA0024. InGaP HBT. 1000MHz. Product Description. Ordering Information

SGB-6433(Z) Vbias RFOUT

RFG1M MHZ to 1000MHZ 180W GaN RFG1M MHZ TO 1000MHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features Advanced

SGA2463Z. Frequency (GHz) 18.0 dbm 1950MHz. 7.2 dbm 1950 MHz 255 C/W

RF V to 4.2V, 2.4GHz Front End Module

Product Description. GaAs HBT GaAs MESFET InGaP HBT

RFPA GHz TO 5.9GHz 2W InGaP AMPLIFIER

RFVC GHz to 12.1GHz MMIC VCO with Fo/2 and Fo/4 Outputs

RFVC1843TR7. 9.8GHz to 11.3GHz MMIC VCO with Fo/2 and Fo/4 Outputs. Features. Applications. Ordering Information

DATA GND VCC GND RF1 GND GND GND. Product Description. Ordering Information. Sample bag with 25 pieces 7 Sample reel with 100 pieces

Product Description. Ordering Information. GaAs HBT GaAs MESFET InGaP HBT

GND GND GND. Product Description. Ordering Information. Sample bag with 25 pieces 7 Sample reel with 100 pieces. GaAs MESFET Si BiCMOS Si CMOS Si BJT

RFDA0035 DIGITAL CONTROLLED IF DUAL VGA 5 BIT 1dB LSB CONTROL

Absolute Maximum Ratings Parameter Rating Unit Drain Voltage (V D ) 150 V Gate Voltage (V G ) -8 to +2 V Gate Current (I G ) 39 ma Operational Voltage

RF V TO 4.2V, 2.4GHz FRONT END MODULE

CGA-6618Z Dual CATV 5MHz to 1000MHz High Linearity GaAs HBT Amplifier CGA-6618Z DUAL CATV 5MHz to 1000MHz HIGH LINEARITY GaAs HBT AMPLIFIER Package: E

SGA2386ZDC to 5000MHz, Cascadable. SiGe HBT. MMIC Amplifier. Frequency (GHz) 2800 MHz >10dB 97 C/W

Product Description. Ordering Information. GaAs MESFET Si BiCMOS

= 35 ma (Typ.) Frequency (GHz)

RFPA TO 5 V PROGRAMMABLE GAIN HIGH EFFICIENCY POWER AMPLIFIER

Gain and Return Loss versus Frequency (w/ BiasTees) 25 C 25 C 25 C. Frequency (GHz)

Frequency (GHz) 5000 MHz

Not For New Design FMS W GaAs phemt SPDT SWITCH. Product Description. Features. Applications

Amplifier Configuration

Product Description. Ordering Information. GaAs HBT GaAs MESFET InGaP HBT

RF W GaN WIDEBAND PULSED POWER AMPLIFIER

RF2436 TRANSMIT/RECEIVE SWITCH

Amplifier Configuration

RF5623 SINGLE 5.0V, 3.3 TO 3.8 GHZ LINEAR POWER AMPLIFIER

RF8889A SP10T ANTENNA SWITCH MODULE

RF2418 LOW CURRENT LNA/MIXER

RFDA3016 Digital Controlled Variable Gain Amplifier 3000MHz to 3800MHz, 6-Bit 0.5dB LSB Control

Specification Min. Typ. Max.

RF3857 DUAL CHANNEL LNA WITH BYPASS MODE

75 VOLTAGE CONTROLLED ATTENUATOR GND RFIN. Product Description. Ordering Information. GaAs MESFET Si BiCMOS Si CMOS Si BJT

RF V TO 5.0V, 3.3GHz TO 3.8GHz LINEAR POWER AMPLIFIER

SZM-5066Z 5.0V, 5GHz HIGH POWER LINEAR POWER AMPLIFIER

GND RFIN. Product Description. Ordering Information. GaAs MESFET Si BiCMOS Si CMOS

RF1136 BROADBAND LOW POWER SP3T SWITCH

RF5633 SINGLE 5.0V, 3.3 TO 3.8GHZ LINEAR POWER AMPLIFIER

RF2126 HIGH POWER LINEAR AMPLIFIER

Absolute Maximum Ratings Parameter Rating Unit Max Input Power, OFDM Modulated, 3:1 Load VSWR +39 dbm Max Input Power, 2:1 VSWR +41 dbm ESD HBM Rating

SDA-3000 GaAs Distributed Amplifier

RFSW6062 Low Insertion High Isolation SP6T Switch 5MHz to 6000MHz

RFFM8500Q. 4.9GHz to 5.85GHz a/n Front End Module. Features. Applications. Ordering Information

RF3375 GENERAL PURPOSE AMPLIFIER

RF V LOW NOISE AMPLIFIER/ 3V DRIVER AMPLIFIER

NOT FOR NEW DESIGNS SGA5386Z. Absolute Maximum Ratings MHz. Parameter Rating Unit. Typical Performance at Key Operating Frequencies

RF2044A GENERAL PURPOSE AMPLIFIER

Product Description. Ordering Information. GaAs MESFET Si BiCMOS Si CMOS Si BJT. DRAFT DRAFT1 of

LNA In. Input Match. LNA Vref. LNA Sel. RX Switch. TX Switch GND. PA Vcc2 GND GND. PA Out. Product Description. GaAs HBT GaAs MESFET InGaP HBT

Simplified Device Schematic. Pin 18. Pin 8. Pin 16. Stage 1 Bias. Stage 2 Bias. Pin 10

RF3376 General Purpose Amplifier

SGA4586Z DC to 4000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER

SZM-3066Z. 3.3GHz to 3.8GHz 2W POWER AMPLIFIER. Product Description. Features. Applications. Package: QFN, 6mmx6mm

Typical Gmax, OIP3, 5V,270mA 42 OIP3. 30 P1dB Frequency (GHz)

VCC RF IN. Input Match VREG. Product Description. Ordering Information. Standard 25 piece bag Standard 2500 piece reel. GaAs HBT GaAs MESFET InGaP HBT

RFSA3043TR7. 75Ω Voltage Controlled Attenuator 5MHz to 3000MHz. Features. Applications. Ordering Information RFSA3043

RDA1005L DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 50 MHZ TO 4000 MHZ, 6 BIT

RFFM V to 5.0V, 2.4GHz to 2.5GHz b/g/n/ac WiFi Front End Module. Features. Applications. Ordering Information

RF1226 BROADBAND MEDIUM POWER DIFFERENTIAL SPDT SWITCH

RF V TO 4.0V, 470MHz to 510MHz TRANSMIT/RECEIVE MODULE

RFVA0016 Application Note

SGA7489Z DC to 3000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK

RFFM3482Q 2.4GHz to 2.5GHz, Automotive WiFi Front End Module

RFVA1017 ANALOG CONTROLLED VARIABLE GAIN AMPLIFIER

SZA-5044(Z) 4.9GHz to 5.9GHz 5V POWER AMPLIFIER. Features. Product Description. Applications. Package: QFN, 4mmx4mm

RF1200 BROADBAND HIGH POWER SPDT SWITCH

I REF Q REF GND2 GND2 GND2 VCC1. Product Description. Ordering Information. GaAs HBT GaAs MESFET InGaP HBT

RFDA0056 Digital Controlled Variable Gain Amplifier 300MHz to 1100MHz, 6-Bit 0.5dB LSB Control

RF5632 SINGLE 5.0V, 2.3 TO 2.7 GHZ LINEAR POWER AMPLIFIER

RF2162 3V 900MHz LINEAR AMPLIFIER

RFFM8511TR7. 4.9GHz to 5.85GHz a/n/ac WiFi Front End Module. Features. Applications. Ordering Information

RFPA2013 Application Note

Preliminary C0.25 VDD N/C RF1 N/C N/C. Product Description. Ordering Information

LNA VCC RX OUT TX IN VREG. Product Description. Ordering Information. Standard 25 piece bag Standard 2500 piece reel. GaAs HBT GaAs MESFET InGaP HBT

RF V TO 4.0V,915MHz Transmit/Receive

V S. RF Out / V S. Specification (V S =3V) Specification (V S =4V) Min. Typ. Max. Min. Typ. Max.

RF3826TR13. 9W GaN Wide-Band Power Amplifier 30MHz to 2500MHz. Features. Applications. Ordering Information RF3826

CGB-1089Z. 50MHz to 1000MHz SINGLE ENDED InGaP/GaAs HBT MMIC CATV AMPLIFIER. Features. Product Description. Applications

SXA-3318B(Z) 400MHz to 2500MHz BALANCED ½ W MEDIUM POWER GaAs HBT AMPLIFIER. Product Description. Features. Applications

SAW BPF SW2_OUT GND GND 868/915 RFIO SW2 GND 450 RFIO GND CTL1 CTL2 CTL LOGIC CTL3 CTL4 CTL5 VDIG. Product Description. Ordering Information

VCC GND RF IN. Product Description. Ordering Information. GaAs HBT GaAs MESFET InGaP HBT

CHR3364-QEG RoHS COMPLIANT

RFFM MHz Transmit/Receive Module

Product Description. Ordering Information. GaAs HBT GaAs MESFET InGaP HBT

RFPA3805TR13. GaAs HBT 2-Stage Power Amplifier 700MHz to 2700MHz

21 GHz to 27 GHz, GaAs, MMIC, I/Q Upconverter HMC815B

5.5 GHz to 8.6 GHz, GaAs, MMIC, I/Q Upconverter HMC6505A

Transcription:

RFUV173 RFUV173 21GHz TO 26.GHz GaAs MMIC IQ UPCONVERTER Package: QFN, 32-Pin, mm x mm x.9mm N/C GND I N/C GND Q N/C Vg1 32 31 3 29 28 27 26 2 Features RF Frequency: 21GHz to 26.GHz LO Frequency (LSB): 1.GHz to 1.2GHz LO Frequency (USB): 8.GHz to 13.2GHz IF Frequency: DC to 4GHz Conversion Gain (Max): 21dB Conversion Gain (Min): -1dB NF (Max. Gain): 12dB OIP3 (Max. Gain): +27dBm Image Rejection: 1dBc Applications Point-to-Point VSAT N/C GND LOIN GND N/C N/C N/C N/C Product Description 1 2 3 4 6 7 8 x2 9 9 1 11 12 13 14 1 16 VLOA1 VLOA2 N/C N/C Vc1 Vc2 Vg2 VMPA Functional Block Diagram 24 23 N/C 22 N/C 21 N/C 2 GND 19 VLPA12 RFOUT 18 GND N/C 17 PACKAGE GND RFMD's RFUV173 is a 21GHz to 26.GHz GaAs phemt upconverter, incorporating an integrated doubler, LO buffer amplifier, a balanced single sideband (image rejection) mixer followed by Variable Gain Amplifier, DC decoupling capacitors. The combination of high performance part and low-cost packaging makes the RFUV173 a cost effective solution, ideally suited to both current and next generation point-topoint and VSAT applications. RFUV173 is packaged in a mm x mm QFN to simplify both system level board design and volume assembly. Ordering Information RFUV173S2 2-Piece Sample Bag RFUV173SB -Piece Bag RFUV173SQ 2-Piece Bag RFUV173SR 1 Pieces on 7 reel RFUV173TR7 7 Pieces on 7 reel RFUV173PCBA-41 Evaluation Board DS1841 RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 212, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 2749-9421 For sales or technical support, contact RFMD at (+1) 336-678-7 or customerservice@rfmd.com. 1 of 14

RFUV173 Absolute Maximum Ratings Parameter Rating Unit LPA Drain Voltage V D 6 V LOA Drain Voltage 6 V IF Input Power 1 dbm LO Input Power 1 dbm T OPER - to +8 C T STOR -6 to +1 C ESD Human Body Model Class 1A Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RFMD Green: RoHS compliant per EU Directive 22/9/EC, halogen free per IEC 61249-2-21, < 1ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. Nominal Operating Parameters Parameter Specification Min. Typ. Max. Unit Condition RF Frequency 21 26. GHz LO Frequency: LSB 1. 1.2 GHz LO Frequency: USB 8. 13.2 GHz IF Frequency DC 2. 4. GHz LO input Drive dbm Conversion Gain (Max.) (USB) 19 21 db LO=9.9 GHz & 11. GHz Conversion Gain (Min.) (USB) -. - db LO=9.9 GHz & 11. GHz OIP3 (max. Gain) (USB) 23. 29 dbm LO=9.9 GHz OIP3 (-db Gain) (USB). 6. dbm LO=9.9 GHz OIP3 (max. Gain) (USB) 2. 27 dbm LO=11. GHz OIP3 (-db Gain) (USB) 4 9 dbm LO=11. GHz Image Rejection (max. Gain) (USB) 1 2 dbc LO=9.9 GHz Image Rejection (max. Gain) (USB) 14 2 dbc LO=11. GHz LO Leakage @ RF-Port (max. Gain) (USB) -1 dbm LO=9.9 GHz LO Leakage @ RF-Port (max. Gain) (USB) 1 7. dbm LO=11. GHz NF (max. Gain) 12 db LO Return Loss 1 db RF Return Loss 1 db VLOA 4 V VLPA 3. V VMOA 4. V ILOA 2 ma ILOA12 12 ma IMPA 12 ma ITOTAL 44 ma VC1, VC2-4 V 2 of 14 7628 Thorndike Road, Greensboro, NC 2749-9421 For sales or technical support, contact RFMD at (+1) 336-678-7 or customerservice@rfmd.com. DS1841

RFUV173 Test Conditions and Bias Sequence Measurements performed with I and Q (IF) ports connected to an external 9 Hybrid, LO Power = dbm and IF = 2.GHz, -1dBm, unless otherwise stated. V LOA1 = V LOA2 = 4V, I LOA1, 2 = 2mA; V LPA12 = 3.V, Adjust V G1 around -.4V to get I LPA12 = 12mA; V MPA = 4.V, Adjust V G2 to get I MPA = 12mA; I TOTAL = 44mA, V C1 = V C2 = -4V Typical Bias Sequence G MAX G MIN V C1 (V) -4-2 -1 V C2 (V) -4-4 -4-4 -2-1 More dynamic range can be achieved using V G2 over (-.4 to -1V) and V G1 over (-.4 to -1V) Typical Electrical Performance Measurements performed with I and Q (IF) ports connected to an external 9 Hybrid, LO Power = dbm and IF = 2.GHz, -1dBm, unless otherwise stated. USB Conversion Gain, Image Rejection and OIP3 V LOA1 = V LOA2 = 4V, I LOA1, 2 = 2mA; V LPA12 = 3.V, Adjust V G1 around -.4V to get I LPA12 = 12mA; V MPA = 4.V, Adjust V G2 to get I MPA = 12mA; I TOTAL = 44mA, V C1 = V C2 = -4V USB Conversion Gain versus RF Frequency USB OIP3 at Gmax versus RF Frequency 3 3 2 3 Conversion Gain (db) 2 1 1 OIP3 at Gmax (dbm) 2 2 1 1 21 22 23 24 2 26 27 21 22 23 24 2 26 27 4 USB Image Rejection versus RF Frequency 3 Image Rejection (dbc) 3 2 2 1 1 21 22 23 24 2 26 27 DS1841 7628 Thorndike Road, Greensboro, NC 2749-9421 For sales or technical support, contact RFMD at (+1) 336-678-7 or customerservice@rfmd.com. 3 of 14

RFUV173 USB OIP3 versus Conversion Gain V LOA1 = V LOA2 = 4V, I LOA1, 2 = 2mA; V LPA12 = 3.V, Adjust V G1 around -.4V to get I LPA12 = 12mA; V MPA = 4.V, Adjust V G2 to get I MPA = 12mA; I TOTAL = 44mA, V C1 = V C2 = -4V Typical Bias Sequence G MAX G MIN V C1 (V) -4-2 -1 V C2 (V) -4-4 -4-4 -2-1 More dynamic range can be achieved using V G2 over (-.4 to -1V) 3 OIP3 versus Conversion Gain at 2 C (USB 26GHz Band) 3 OIP3 versus Conversion Gain at 2 C (USB 23GHz Band) 3 3 OIP3 (dbm) 2 2 1 1 26.GHz 2.GHz 24.GHz OIP3 (dbm) 2 2 1 1 23.6GHz 22.4GHz 21.2GHz 1 1 1 2 2 Conversion Gain (db) 1 1 1 2 2 Conversion Gain (db) 4 of 14 7628 Thorndike Road, Greensboro, NC 2749-9421 For sales or technical support, contact RFMD at (+1) 336-678-7 or customerservice@rfmd.com. DS1841

RFUV173 USB LO Leakage V LOA1 = V LOA2 = 4V, I LOA1, 2 = 2mA; V LPA12 = 3.V, Adjust V G1 around -.4V to get I LPA12 = 12mA; V MPA = 4.V, Adjust V G2 to get I MPA = 12mA; I TOTAL = 44mA, V C1 = V C2 = -4V USB x2 LO at Gmax versus x2 LO Frequency (26GHz Band) USB x2 LO at Gmax versus x2 LO Frequency (23GHz Band) x2 LO Leakage at Gmax (dbm) 1 x2 LO Leakage at Gmax (dbm) 1 1 22 22. 23 23. 24 1 18. 19 19. 2 2. 21 21. x2 LO Frequency (GHz) x2 LO Frequency (GHz) DS1841 7628 Thorndike Road, Greensboro, NC 2749-9421 For sales or technical support, contact RFMD at (+1) 336-678-7 or customerservice@rfmd.com. of 14

RFUV173 Over Temperature Performance (USB) V LOA1 = V LOA2 = 4V, I LOA1, 2 = 2mA; V LPA12 = 3.V, Adjust V G1 around -.4V to get I LPA12 = 12mA; V MPA = 4.V, Adjust V G2 to get I MPA = 12mA; I TOTAL = 44mA 3 Max Conversion Gain versus RF Frequency Over Temperature (USB) 3 OIP3 at Gmax versus RF Frequency Over Temperature (USB) 2 3 Conversion Gain (db) 2 1 1 2 C 4 C 8 C 21 22 23 24 2 26 27 Vc1= 4V Vc2= 4V OIP3 (dbm) 2 2 1 1 2 C 4 C 8 C 21 22 23 24 2 26 27 Vc1= 4V Vc2= 4V Conversion Gain (db) 1 8 6 4 2 2 4 6 8 Conversion Gain versus RF Frequency Over Temperature at db CG set point (USB) 2 C 4 C 8 C Vc1=V Vc2=V 1 21 22 23 24 2 26 27 OIP3 (dbm) 3 3 2 2 1 1 OIP3 at db CG versus RF Frequency Over Temperature (USB) 2 C 4 C 8 C 21 22 23 24 2 26 27 Vc1=V Vc2=V 6 of 14 7628 Thorndike Road, Greensboro, NC 2749-9421 For sales or technical support, contact RFMD at (+1) 336-678-7 or customerservice@rfmd.com. DS1841

RFUV173 LSB Conversion Gain, Image Rejection, and OIP3 V LOA1 = V LOA2 = 4V, I LOA1, 2 = 2mA; V LPA12 = 3.V, Adjust V G1 around -.4V to get I LPA12 = 12mA; V MPA = 4.V, Adjust V G2 to get I MPA = 12mA; I TOTAL = 44mA, V C1 = V C2 = -4V LSB Conversion Gain versus RF Frequency LSB OIP3 at Gmax versus RF Frequency 3 3 2 3 Conversion Gain (db) 2 1 1 OIP3 at Gmax (dbm) 2 2 1 1 21 22 23 24 2 26 27 21 22 23 24 2 26 27 4 LSB Image Rejection versus RF Frequency 3 Image Rejection (dbc) 3 2 2 1 1 21 22 23 24 2 26 27 DS1841 7628 Thorndike Road, Greensboro, NC 2749-9421 For sales or technical support, contact RFMD at (+1) 336-678-7 or customerservice@rfmd.com. 7 of 14

RFUV173 LSB LO Leakage V LOA1 = V LOA2 = 4V, I LOA1, 2 = 2mA; V LPA12 = 3.V, Adjust V G1 around -.4V to get I LPA12 = 12mA; V MPA = 4.V, Adjust V G2 to get I MPA = 12mA; I TOTAL = 44mA, V C1 = V C2 = -4V LSB x2 LO at Gmax versus x2 LO Frequency (26GHz Band) LSB x2 LO at Gmax versus x2 LO Frequency (23GHz Band) x2 LO Leakage at Gmax (dbm) 1 1 2 2 27 27. 28 28. 29 x2 LO Leakage at Gmax (dbm) 1 1 2 2 23. 24 24. 2 2. 26 26. x2 LO Frequency (GHz) I BIAS = -42mV Q BIAS = mv x2 LO Frequency (GHz) I BIAS = -6mV Q BIAS = mv 8 of 14 7628 Thorndike Road, Greensboro, NC 2749-9421 For sales or technical support, contact RFMD at (+1) 336-678-7 or customerservice@rfmd.com. DS1841

RFUV173 Performance Using Single Control Line (without IQ bias)_1 V MPA = 4.V, V LPA12 = 3.V, V LOA1 = V LOA2 = 4V, I total = 44mA, V G1 = V G2 = -.4V V C1 and V C2 are connected together off chip and changes over (-4V to V) USB Conversion Gain versus Frequency USB OIP3 versus Frequency 2 VC1 VC2 (V) 3 VC1 VC2 (V) Conversion Gain (db) 2 1 1 4 4 3 3 2. 2. 2 2 1. 1. 1 1.8.8.6.6.4.4.2.2 OIP3 (dbm) 3 2 2 1 1 4 4 3 3 2. 2. 2 2 1. 1. 1 1.8.8.6.6.4.4.2.2 21.2 21.8 22. 23.1 23.8 24.4 2.1 2.7 26.4 27. 21.2 21.8 22. 23.1 23.8 24.4 2.1 2.7 26.4 27. Performance Using Double Control Line (without IQ bias)_2 V MPA = 4.V, V LPA12 = 3.V, V LOA1 = V LOA2 = 4V, I total = 44mA, V G1 = V G2 = -.4V V C1 and V C2 are separately controlled and changes over (-4V to V) USB Conversion Gain versus Frequency VC1,VC2 (V) USB OIP3 versus Frequency VC1,VC2 (V) 2. 3. 2. 4 4 3 4 3. 4 4 3 4 Conversion Gain (db) 1. 1... 2 4 1 4 1 3 1 2 1 1 1.3 1 4 3 2 1 OIP3 (dbm) 2. 2. 1. 1.. 2 4 1 4 1 3 1 2 1 1 1.3 1 4 3 2 1. 21.2 21.8 22. 23.1 23.8 24.4 2.1 2.7 26.4 27.. 21.2 21.8 22. 23.1 23.8 24.4 2.1 2.7 26.4 27. DS1841 7628 Thorndike Road, Greensboro, NC 2749-9421 For sales or technical support, contact RFMD at (+1) 336-678-7 or customerservice@rfmd.com. 9 of 14

RFUV173 Conversion Gain (db) 3. 2. 2. 1. 1.... 1. 1. Performance Using Single Control on V G1 = V G2 (without IQ bias)_3 V MPA = 4.V, V LPA12 = 3.V, V LOA1 = V LOA2 = 4V, V C1 = V C2 = -4V V G1 and V G2 are connected together off chip and changes over (-.3V to -1V) USB Conversion Gain versus RFFrequency With (V G1 + V G2 ) Variation 2. 21.2 21.8 22. 23.1 23.8 24.4 2.1 2.7 26.4 27 I_Total (ma) 218 226 239 23 27 29 39 331 32 37 399 424 448 473 499 OIP3 (dbm) 4. 3. 3. 2. 2. 1. 1.... 1. USB OIP3 versus RFFrequency With (V G1 + V G2 ) Variation 1. 21.2 21.8 22. 23.1 23.8 24.4 2.1 2.7 26.4 27 I_Total (ma) 218 226 239 23 27 29 39 331 32 37 399 424 448 473 499 LO Leakage (dbm) 1 1 2 2 3 3 USB X2 LOLeakageversus X2LO Frequency With (V G1 + V G2 ) Variation No IQ BIAS 4 18.7 19.3 2 2.6 21.3 21.9 22.6 23.2 23.9 24. X2LOFrequency (GHz) I_Total (ma) 218 226 239 23 27 29 39 331 32 37 399 424 448 473 499 1 of 14 7628 Thorndike Road, Greensboro, NC 2749-9421 For sales or technical support, contact RFMD at (+1) 336-678-7 or customerservice@rfmd.com. DS1841

RFUV173 Package Outline Drawing QFN, 32-Pin, mm x mm x.9mm.±.1.9±.1.13.±..32±.1.3±.1.±.1 4.4±.1 3.±.1 3.±.1 4.4±.1 DS1841 7628 Thorndike Road, Greensboro, NC 2749-9421 For sales or technical support, contact RFMD at (+1) 336-678-7 or customerservice@rfmd.com. 11 of 14

RFUV173 Pin Names and Description Pin Name Description 1 N/C Not Connected 2 GND Ground 3 LO Local Oscillator Input. AC Coupled and Matched to 4 GND Ground N/C Not Connected 6 N/C Not Connected 7 N/C Not Connected 8 N/C Not Connected 9 VLOA1 LOA Stage1 Drain Bias 1 VLOA2 LOA Stage2 Drain Bias 11 N/C Not Connected 12 N/C Not Connected 13 VC1 Control Line Number 1 (See Bias Sequence Description) 14 VC2 Control Line Number 2 (See Bias Sequence Description) 1 VG2 MPA Gate Bias 16 VMPA MPA Drain Bias 17 N/C Not Connected 18 GND Ground 19 RFOUT RF Output. AC Coupled and Matched to 2 GND Ground 21 N/C Not Connected 22 N/C Not Connected 23 N/C Not Connected 24 VLPA1, VLPA2 LPA Stage 1, 2 Drain Bias 2 VG1 LPA Stage 1, 2 Gate Bias 26 N/C Not Connected 27 Q IF Q Input 28 GND Ground 29 N/C Not Connected 3 I IF I Input 31 GND Ground 32 N/C Not Connected 12 of 14 7628 Thorndike Road, Greensboro, NC 2749-9421 For sales or technical support, contact RFMD at (+1) 336-678-7 or customerservice@rfmd.com. DS1841

RFUV173 Application Circuit Block Diagram IF IN I bias 2pF 1 nh 1 nh 2pF Q bias 32 31 3 29 28 27 26 2 1pF 1nF Vg1 1uF LO IN 1 2 3 9 24 23 22 VLPA1,2 1pF 1nF 1uF 4 x2 21 2 6 7 8 19 18 17 RF OUT VLOA1 1uF 1nF 1pF 9 1 11 12 13 14 1 16 1pF 1nF 1uF VMPA VLOA2 1uF 1nF 1pF PACKAGE GND 1pF 1nF 1uF Vg2 VC1 1uF 1nF 1pF 1pF 1nF 1uF VC2 2*LO - IF = RF (LSB), LO = 1. to 1.2GHz 2*LO + IF = RF (USB), LO = 8.GHz to 13.2GHz Notes: 1. External components for IQ biases are required. 2. External hybrid coupler is required. DS1841 7628 Thorndike Road, Greensboro, NC 2749-9421 For sales or technical support, contact RFMD at (+1) 336-678-7 or customerservice@rfmd.com. 13 of 14

RFUV173 Evaluation Board Layout VLOA1 VLOA2 NC VC1 VC2 VG2 GND GND GND VG1 VLPA2VMPA Sub-Band Frequency Ranges Band Frequency Range 23GHz 21.2GHz to 23.6GHz 26GHz 24.GHz to 26.GHz 14 of 14 7628 Thorndike Road, Greensboro, NC 2749-9421 For sales or technical support, contact RFMD at (+1) 336-678-7 or customerservice@rfmd.com. DS1841