1MHz,30V/1.5A High Performance, Boost Converter

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1MHz,30V/1.A High Performance, Boost Converter General Description The is a current mode boost DC-DC converter. Its PWM circuitry with built-in 1.A current power MOSFET makes this converter highly power efficiently. The implements a constant frequency 1MHz PWM control scheme. The high frequency PWM operation also saves board space by reducing external component sizes. The features automatic shifting to pulse frequency modulation mode at light loads.highly integration and internal compensation Features High Efficiency: 90% 1MHzFixed-Frequency PWM Operation Maximum Output Voltage up to 30V Guaranteed 13V/200mA Output with V input Operating Range : 2.2V to.v Shutdown Supply Current:<1uA Available in SOT23- Package Minimize the External Component RoHS Compliant and 100% Lead (Pb)-Free network minimizes as 6 external component counts. Optimized operation frequency can meet the requirement of small LC filters value and low operation current with high efficiency. The includes under-voltage lockout, current limiting, and thermal overload protection to prevent damage in the event of an output overload. The is available in a small -pin SOT23-package. Order Information Typical Application Circuit Vin C1 10uF 4.7uH 4 1 LX VIN SHDN GND 2 FB 3 C2 10uF Vout R1 R2 F: Pb-Free Package Type B: SOT23- Marking information Device Marking Package Shipping SOT23-3K/REEL Applications Y: Year code. W: Weeks code. X: Series number code. Panel Bais Voltage supply OLED Backlight driver Notebook Computers Portable Applications MID/PTV -01 Jun.-201 Email: marketing@lowpowersemi.com www.lowpowersemi.com Page 1 of 7

Functional Pin Description Package Type Pin Configurations IN SHDN 4 SOT23- Marking 1 2 3 LX GND FB (TSOT23-) Pin Description Pin Name Description 1 LX Switch Pin. Connect this Pin to inductor and catch diode. Minimize the track area to reduce EMI. 2 GND Ground Pin 3 FB Feedback Reference Voltage Pin. Series connect a resistor between Vout and ground as a voltage sense. 4 /SHDN Chip Enable (Active High). Voltage sensing input to trigger the function of over voltage protection. Note that this pin is high impedance. There should be a pull low 100kΩ resistor connected to GND when the control signal is floating. VIN Supply Input Voltage Pin. Bypass 10uF capacitor to GND to reduce the input noise. -01 Jun.-201 Email: marketing@lowpowersemi.com www.lowpowersemi.com Page 2 of 7

Function Block Diagram PWM/PFM CONTROL SHDN VIN 1.2V VREF ERROR AMP. PWM COMPARATION + - CONTROL LOGIC DRIVER M1 LX FB + - RC CC M SLOPE COMPENSATION 1.2MHz OSCILLATOR CURRENT AMP. + - RS GND Absolute Maximum Ratings Supply Input Voltage --------------------------------------------------------------------------------------- -0.3V to 6.V LX Input Voltage ---------------------------------------------------------------------------------------------- -0.3V to 36V The Other Pins ----------------------------------------------------------------------------------------------- -0.3V to.v Power Dissipation, PD @ TA = 2 C TSOT-23- ------------------------------------------------------------ 0.4W SOT23-, θja ------------------------------------------------------------------------------------------------------ 20 C/W Lead Temperature (Soldering, 10 sec.) ------------------------------------------------------------------------- 260 C Operation Temperature Range ------------------------------------------------------------------------- -40 C to 8 C Storage Temperature Range --------------------------------------------------------------------------- -6 C to 10 C -01 Jun.-201 Email: marketing@lowpowersemi.com www.lowpowersemi.com Page 3 of 7

Electrical Characteristics Parameter Symbol Test Condition Min Typ. Max Units System Supply Input Operation voltage Range VDD 2.2 6 V Under Voltage Lock Out VDD 1. 1.8 2.1 V Supply Current IDD FB=1.3V 430 0 ua Shut Down Current IDD VEN=0V 0.1 1 ua Line Regulation VIN : 3.0~4.3V 0.2 % Oscillator Operation Frequency FOSC 1.2 MHz Maximum Duty Cycle 93 % Feedback Voltage 1.21 1.23 1.2 V MOSFET On Resistance of MOSFET RDS(ON) 0.4 Ω SW Current Limit ILM 1. A Protection Shut Down Voltage VEN 0.4 V Enable on Voltage VEN 1.4 V Thermal Shutdown Temperature T SD 10 C -01 Jun.-201 Email: marketing@lowpowersemi.com www.lowpowersemi.com Page 4 of 7

1 10 0 100 10 200 20 300 30 400 40 00 0 8 600 Vo(V) Imax(mA) Preliminary Datasheet Typical Operating Characteristics. 4. Vin=3.3V 4 3. 3 2. 2 Io(mA) Load Regulation(Vo=V) 702 602 02 402 302 202 Vo=V 102 Vo=10V 2 2. 2.7 3 3.3 3.7 4 4.2 4.. Supply Voltage Maximum Output Current VS. Supply Voltage -01 Jun.-201 Email: marketing@lowpowersemi.com www.lowpowersemi.com Page of 7

Applications Information Inductor Selection The recommended value of inductor for 30V applications are 4.7 to 22μH. Small size and better efficiency are the major concerns for portable device, such as used for mobile phone. The inductor should have low core loss at 1MHz and low DCR for better efficiency. To avoid inductor saturation current rating should be considered. Constant Output Voltage Control The output voltage of the can be adjusted by the divider circuit on the FB pin. Typical FB voltage is 120mV. The output voltage can be calculated by the following Equations. Vout=(R1+R2)/R2*VFB Power Sequence In order to assure the normal soft start function for suppressing the inrush current, the input voltage should be ready before EN pulls high. Current Limiting The current flow through inductor as charging period is detected by a current sensing circuit. As the value comes across the current limiting threshold, the N-MOSFET will be turned off so that the inductor will be forced to leave charging stage and enter discharging stage. Therefore, the inductor current will not increase over the current limiting threshold. Thermal Considerations For continuous operation, do not exceed absolute maximum operation junction temperature. The maximum power dissipation depends on the thermal resistance of IC package, PCB layout, the rate of surroundings airflow and temperature difference between junction and ambient. The maximum power dissipation can be calculated by following formula: PD=(TJ-TA)/ θja Layout Consideration For best performance of the, the following guidelines must be strictly followed. - Input and Output capacitors should be placed close to the IC and connected to ground plane to reduce noise coupling. - Keep the main current traces as possible as short and wide. - LX node of DC-DC converter is with high frequency voltage swing. It should be kept at a small area. - Place the feedback components as close as possible to the IC and keep away from the noisy devices. UVLO/OTP The input voltage is lower than a specified value, the chip will enter protection mode to prevent abnormal function. As the die temperature is higher than 10 C, the chip also will enter protection mode. The power MOSFET will be turned off during protection mode to prevent abnormal operation. -01 Jun.-201 Email: marketing@lowpowersemi.com www.lowpowersemi.com Page 6 of 7

Packaging Information -01 Jun.-201 Email: marketing@lowpowersemi.com www.lowpowersemi.com Page 7 of 7