50A, 600V Hyperfast Rectifier

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RHRG56F85 5A, 6V Hyperfast Rectifier Features High Speed Switching ( t rr =45(Typ.) @ I F =5A ) Low Forward Voltage( V F =.67V(Typ.) @ I F =5A ) Avalanche Energy Rated AECQ Qualified Applicatio Switching Power Supply Power Switching Circuits General Purpose Max Ratings (6V, 5A) The RHRG56F85 is an Hyperfast diode with soft recovery characteristics (trr < 45). It has half the recovery time of ultrafast diode and is of silicon nitride passivated ionimplanted epitaxial planar cotruction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of automotive switching power supplies and other power switching automotive applicatio. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching traistors. RHRG56F85 5A, 6V Hyperfast Rectifier Automotive and General Purpose Pin Assignments TO2472L. Cathode 2. Anode 2. Cathode 2. Anode Absolute Maximum Ratings = 25 C unless otherwise noted Symbol Parameter Ratings Units V RRM Peak Repetitive Reverse Voltage 6 V V RWM Working Peak Reverse Voltage 6 V V R DC Blocking Voltage 6 V I F(AV) Average Rectified Forward Current @ = 25 C 5 A I FSM Nonrepetitive Peak Surge Current (Halfwave Phase 5Hz) 5 A E AVL Avalanche Energy (.4A, 4mH) 4 mj T J, T STG Operating Junction and Storage Temperature 55 to +75 C Thermal Characteristics = 25 C unless otherwise noted Symbol Parameter Max Units R θjc Maximum Thermal Resistance, Junction to Case.42 C/W R θja Maximum Thermal Resistance, Junction to Ambient 45 C/W Package Marking and Ordering Information Device Marking Device Package Tube Quantity RHRG56 RHRG56F85 TO247 3 24 Semiconductor Components Industries, LLC. September27, Rev. 3 Publication Order Number: RHRG56F85/D

Electrical Characteristics = 25 C unless otherwise noted Symbol Parameter Conditio Min. Typ. Max Units I R Itantaneous Reverse Current V R = 6V = 25 C 25 ua = 75 C.5 ma V FM Itantaneous Forward Voltage I F = 5A = 25 C = 75 C 2 t rr Reverse Recovery Time I F =A, di/dt = A/μs, V CC = 39V t a t b Q rr Reverse Recovery Time Reverse Recovery Charge Notes:. Pulse : Test Pulse width = 3μs, Duty Cycle = 2% 2. Guaranteed by design Test Circuit and Waveforms I F =5A, di/dt = A/μs, V CC = 39V I F =5A, di/dt = A/μs, V CC = 39V.67.29 2..7 V V = 25 C 37 45 = 25 C = 75 C = 25 C 45 2 25 2 45 6 nc RHRG56F85 5A, 6V Hyperfast Rectifier 2

Typical Performance Characteristics Figure. Typical Forward Voltage Drop vs. Forward Current Forward Current, I F [A] = 75 o C = 25 o C...5..5 2. 2.5 Forward Voltage, V F [V] Figure 3.Typical Junction Capacitance Capacitances, Cj [pf] 25 5 4 3 2 = 25 o C Typical Capacitance at V = 54pF Figure 2. Typical Reverse Current vs. Reverse Voltage Reverse Current, I R [μa].. E3 = 75 o C = 25 o C = 25 o C E4 2 3 4 5 6 Reverse Voltage, V R [V] Figure 4. Typical Reverse Recovery Time vs. di/dt Reverse Recovery Time, t rr [] 2 5 5 = 25 o C = 25 o C = 75 o C I F = 5A RHRG56F85 5A, 6V Hyperfast Rectifier. Reverse Voltage, V R [V] Figure 5. Typical Reverse Recovery Current vs. di/dt Reverse Recovery Current, I rr [A] 3 25 2 5 5 I F = 5A = 75 o C = 25 o C = 25 o C 2 3 4 5 di/dt [A/μs] 2 3 4 5 di/dt [A/μs] Figure 6. Forward Current Derating Curve Average Forward Current, I F(AV) [A] 2 5 5 25 5 75 25 5 75 Case temperature, [ o C] 3

Typical Performance Characteristics (Continued) Reverse Recovery Charge, Q rr [nc] Figure 7. Reverse Recovery Charge 8 2 6 I F = 5A = 75 o C = 25 o C = 25 o C 2 3 4 5 di/dt [A/μs] Figure 8. Traient Thermal Respoe Curve RHRG56F85 5A, 6V Hyperfast Rectifier Z thjc (t), Thermal Respoe D=.5..2..5 P DM t t 2 * Notes :. Z (t) =.42 o C/W Typ. thjc.2. 2. Duty Factor, D=t /t 2 single pulse 3. T T = P * Z (t) JM C DM thjc. 5 4 3 2 2 t, Square Wave Pulse Duration [sec] 4

Mechanical Dimeio TO2472L RHRG56F85 5A, 6V Hyperfast Rectifier Dimeio in Millimeters 5

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