Input Rectifier Diode, 8 A 8EPS16 High Voltage Series Vishay High Power Products TO-247AC PRODUCT SUMMARY V F at 8 A I FSM V RRM Base cathode 4, 2 1 3 Anode Anode 1.17 V 145 A 16 V DESCRIPTION/FEATURES The 8EPS16 rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 15 C junction temperature. Typical applications are in input rectification and these products are designed to be used with Vishay HPP switches and output rectifiers which are available in identical package outlines. This product has been designed and qualified for industrial level. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I F(AV) Sinusoidal waveform 8 A V RRM 16 V I FSM 145 A V F 8 A, T J = 25 C 1.17 V T J - 4 to 15 C VOLTAGE RATINGS PART NUMBER V RRM, MAXIMUM PEAK REVERSE VOLTAGE V V RSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V I RRM AT 15 C ma 8EPS16 16 17 1 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I F(AV) T C = 1 C, 18 conduction half sine wave 8 Maximum peak one cycle 1 ms sine pulse, rated V RRM applied 145 A I FSM non-repetitive surge current 1 ms sine pulse, no voltage reapplied 15 1 ms sine pulse, rated V RRM applied 1 5 Maximum I 2 t for fusing I 2 t 1 ms sine pulse, no voltage reapplied 14 A 2 s Maximum I 2 t for fusing I 2 t t =.1 to 1 ms, no voltage reapplied 15 A 2 s Document Number: 9392 For technical questions, contact: diodes-tech@vishay.com www.vishay.com Revision: 19-Jun-8 1
8EPS16 High Voltage Series Vishay High Power Products Input Rectifier Diode, 8 A ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum forward voltage drop V FM 8 A, T J = 25 C 1.17 V Forward slope resistance r t 3.17 mω T J = 15 C Threshold voltage V F(TO).73 V T J = 25 C.1 Maximum reverse leakage current I RM V R = Rated V RRM T J = 15 C 1. ma THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage temperature range T J, T Stg - 4 to 15 C Maximum thermal resistance, junction to case R thjc DC operation.35 Maximum thermal resistance, junction to ambient Typical thermal resistance, case to heatsink Approximate weight R thja 4 R thcs Mounting surface, smooth and greased.2 C/W 6 g.21 oz. minimum 6 (5) kgf cm Mounting torque maximum 12 (1) (lbf in) Marking device Case style TO-247AC (JEDEC) 8EPS16 www.vishay.com For technical questions, contact: diodes-tech@vishay.com Document Number: 9392 2 Revision: 19-Jun-8
Input Rectifier Diode, 8 A 8EPS16 High Voltage Series Vishay High Power Products Maximum Allowable Case Temperature ( C) 15 14 13 12 11 1 9 8 3 R thjc (DC) =.35 K/W 6 Conduction angle 9 12 18 1 2 3 4 5 6 7 8 9 Maximum Average Forward Power Loss (W) 16 14 12 1 8 6 4 2 DC 18 12 9 6 3 RMS limit Conduction period T J = 15 C 2 4 6 8 1 12 14 Fig. 1 - Current Rating Characteristics Fig. 4 - Forward Power Loss Characteristics Maximum Allowable Case Temperature ( C) 15 14 13 12 11 1 9 3 6 9 12 R thjc (DC) =.35 K/W Conduction period 18 DC 2 4 6 8 1 12 14 Fig. 2 - Current Rating Characteristics Peal Half Sine Wave Forward Current (A) 16 14 12 1 8 6 4 1 At any rated load condition and with rated V RRM applied following surge. Initial T J = 15 C at 6 Hz.83 s at 5 Hz.1 s 1 1 Number of Equal Amplitude Half Cycle Current Pulse (N) Fig. 5 - Maximum Non-Repetitive Surge Current Maximum Average Forward Power Loss (W) 12 1 8 6 4 2 18 12 9 6 3 1 2 3 4 5 6 7 8 9 RMS limit Conduction angle T J = 15 C Fig. 3 - Forward Power Loss Characteristics Peak Half Sine Wave Forward Current (A) 18 16 14 12 1 8 6 4.1 Maximum non-repetitive surge current versus pulse train duration. Initial T J = 15 C No voltage reapplied Rated V RRM reapplied.1 1 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Document Number: 9392 For technical questions, contact: diodes-tech@vishay.com www.vishay.com Revision: 19-Jun-8 3
8EPS16 High Voltage Series Vishay High Power Products Input Rectifier Diode, 8 A Instantaneous Forward Current (A) 1 1 1 1 T J = 25 C T J = 15 C.5 1. 1.5 2. 2.5 3. 3.5 4. Instantaneous Forward Characteristics Fig. 7 - Forward Voltage Drop Characteristics 1 Z thjc - Transient Thermal Impedance ( C/W).1 Single pulse D =.5 D =.33 D =.25 D =.17 D =.8 Steady state value (DC operation).1.1.1.1.1 1 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance Z thjc Characteristics 1 www.vishay.com For technical questions, contact: diodes-tech@vishay.com Document Number: 9392 4 Revision: 19-Jun-8
Input Rectifier Diode, 8 A 8EPS16 High Voltage Series Vishay High Power Products ORDERING INFORMATION TABLE Device code 8 E P S 16-1 2 3 4 5 6 1 - Current rating (8 = 8 A) 2 - Circuit configuration: 3 - E = Single diode Package: 4 - P = TO-247AC Type of silicon: S = Standard recovery rectifier 5 - Voltage rating (16 = 16 V) 6 - None = Standard production PbF = Lead (Pb)-free Dimensions Part marking information LINKS TO RELATED DOCUMENTS http://www.vishay.com/doc?95253 http://www.vishay.com/doc?95255 Document Number: 9392 For technical questions, contact: diodes-tech@vishay.com www.vishay.com Revision: 19-Jun-8 5
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