PC364NJF Series Mini-Flat Package High CMR, AC Input, Low Input Current Type Photocoupler Description PC364NJF Series contains an IRED optically coupled to a phototransistor. AC input and Low input current type. It is packaged in a 4-pin mini-flat. Input-output isolation voltage(rms) is 3.75kV. Collector-emitter voltage is 8V and CTR is 5% to 4% at input current of ±.5mA. Features. 4-pin Mini-flat package 2. Double transfer mold package (Ideal for Flow Soldering) 3. AC input type 4. Low input current type (I F =±.5mA) 5. High collector-emitter voltage (V CEO : 8V) 6. High noise immunity due to high common mode rejection voltage (CMR : MIN. kv/µs) 7. High isolation voltage between input and output (V iso(rms) : 3.75kV) 8. RoHS directive compliant Agency approvals/compliance. Recognized by UL577 (Double protection isolation), file No. E6438 (as model No. PC364) 2. Package resin : UL flammability grade (94V-) Applications. Programmable controllers 2. Facsimiles 3. Telephones Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. Date Jun. 3. 25 SHARP Corporation
Internal Connection Diagram 2 4 3 2 3 4 Anode/Cathode Cathode/Anode Emitter Collector Outline Dimensions (Unit : mm) 3.6 ±.3 2.54 ±.25 SHARP mark "S" 4 3 Date code Primary side mark 364 4.4 ±.2 2.4 ±. Rank mark Factory identification mark Epoxy resin 5.3 ±.3 45 2.6 ±.2.2 ±.5. ±. 6 7. +.2.7.5 +.4.2 Product mass : approx..g Plating material : SnCu (Cu : TYP. 2%) 2
Date code (2 digit) st digit Year of production 2nd digit Month of production A.D. 99 99 992 993 994 995 996 997 998 999 2 2 Mark A B C D E F H J K L M N A.D 22 23 24 25 26 27 28 29 2 2 22 Mark P R S T U V W X A B C Month January February March April May June July August September October November December Mark 2 3 4 5 6 7 8 9 O N D repeats in a 2 year cycle Factory identification mark Factory identification Mark no mark Country of origin Japan Indonesia China * This factory marking is for identification purpose only. Please Contact the local SHARP sales reprsentative to see the actual status of the production. Rank mark Refer to the Model Line-up table 3
Absolute Maximum Ratings (T a =25 C) Parameter Symbol Rating Unit Forward current I F ± ma * Peak forward current I FM ±2 ma Power dissipation P 5 mw Collector-emitter voltage V CEO 8 V Emitter-collector voltage V ECO 6 V Collector current I C 5 ma Collector power dissipation P C 5 mw Total power dissipation P tot 7 mw Operating temperature T opr 3 to + C Storage temperature T stg 4 to +25 C *2 Isolation voltage V iso (rms) 3.75 kv *3 Soldering temperature 26 C Input Output * Pulse width µs, Duty ratio :. *2 4 to 6%RH, AC for minute, f=6hz *3 For s T sol Electro-optical Characteristics Parameter Forward voltage Input Terminal capacitance Collector dark current Output Transfer characteristics Collector-emitter breakdown voltage Emitter-collector breakdown voltage Collector current Collector-emitter saturation voltage Isolation resistance Response time Rise time Fall time Symbol V F C t I CEO BV CEO BV ECO I C V CE (sat) R ISO t r t f Conditions I F =±ma V=, f=khz V CE =5V, I F = I C =.ma, I F = I E =µa, I F = I F =±.5mA, V CE =5V I F =±ma, I C =ma DC5V, 4 to 6%RH V CE =2V, I C =2mA, R L =Ω MIN. 8 6.25 5 TYP..2 3 4 3 MAX..4 25 2..2 8 8 (T a =25 C) Unit V pf na V V ma V Ω Floating capacitance C f V=, f=mhz.6. pf Common mode rejection voltage CMR T a =25 C, R L =47Ω, V CM =.5kV(peak) I F =, V CC =9V, V np =mv µs µs kv/µs 4
Model Line-up Package Model No. Taping 3 pcs / reel 75 pcs / reel PC364NJF PC364NJF PC364NTJF PC364NTJF Rank mark with or without A I C [ma] (I F =±.5mA, V CE =5V, T a =25 C).25 to 2..5 to.5 Please contact a local SHARP sales representative to inquire about production status. 5
Fig. Test Circuit for Common Mode Rejection Voltae (dv/dt) R L V O V CC V CM ) V cp V np V CM V CM : High wave pulse R L =47Ω V CC =9V V O (V cp Nearly = dv/dt C f R L ) ) V cp : Voltage which is generated by displacement current in floating capacitance between primary and secondary side. Fig.2 Forward Current vs. Ambient Temperature 5 Fig.3 Diode Power Dissipation vs. Ambient Temperature Forward current IF (ma) 5 Diode power dissipation P (mw) 5 5 3 25 5 75 25 Ambient temperature T a ( C) 3 25 5 75 25 Ambient temperature T a ( C) Fig.4 Collector Power Dissipation vs. Ambient Temperature 25 Fig.5 Total Power Dissipation vs. Ambient Temperature 25 Collector power dissipation PC (mw) 2 5 5 Total power dissipation Ptot (mw) 2 7 5 5 3 25 5 75 25 Ambient temperature T a ( C) 3 25 5 75 25 Ambient temperature T a ( C) 6
Fig.6 Peak Forward Current vs. Duty Ratio Fig.7 Forward Current vs. Forward Voltage Pulse width µs T a =25 C Peak forward current IFM (ma) Forward current IF (ma) T a = C T a =75 C T a =5 C T a =25 C T a = C T a =25 C 3 2 Duty ratio..5.5 2 Forward voltage V F (V) Fig.8 Current Transfer Ratio vs. Forward Current Current transfer ratio CTR (%) 5 4 3 2. Forward current I F (ma) V CE =5V T a =25 C Fig.9 Collector Current vs. Collector-emitter Voltage Collector current IC (ma) 4 T a =25 C P C (MAX.) 3 I F =7mA 2 I F =5mA I F =3mA I F =2mA I F =ma I F =.5mA 2 4 6 8 Collector-emitter voltage V CE (V) Fig. Relative Current Transfer Ratio vs. Ambient Temperature Relative current transfer ratio (%) 5 5 3 2 2 3 4 5 6 7 8 9 Ambient temperature T a ( C) V CE =5V I F =.5mA Fig. Collector - emitter Saturation Voltage vs. Ambient Temperature Collector-emitter saturation voltage VCE (sat) (V).6.4.2..8.6.4.2 3 2 2 3 4 5 6 7 8 9 Ambient temperature T a ( C) I F =ma I C =ma 7
Fig.2 Collector Dark Current vs. Ambient Temperature 5 V CE =5V Fig.3 Response Time vs. Load Resistance (Active region) V CE =2V, I C =2mA 6 Collector dark current ICEO (A) 7 8 9 Responce time (µs) tf tr td ts 3 2 2 3 4 5 6 7 8 9 Ambient temperature T a ( C) Fig.4 Response Time vs. Load Resistance (Saturation region) Vcc=5V, I F =ma, Ta=25 C. Fig.5 Test Circuit for Response Time V CC Load resistance R L (kω) R D R L Output Input Responce time (µs) tf td tr ts Input Output V CE td t r Please refer to the conditions in Fig.3 and Fig. 4 t s t f % 9% Fig.6 Frequency Response Voltage gain AV (db) 5 5 5 2 R L =kω 25. Load resistance R L (kω) Frequency f (khz) V CE =2V I C =2mA T a =25 C kω Ω Fig.7 Collector-emitter Saturation Voltage vs. Forward Current Collector-emitter saturation voltage VCE (sat) (V) 5 4 3 2 I C =7mA I C =5mA I C =3mA I C =2mA I C =ma I C =.5mA 2 4 6 8 Forward current I F (ma) T a =25 C Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. 8
Design Considerations Design guide While operating at I F <.5mA, CTR variation may increase. Please make design considering this fact. In case that some sudden big noise caused by voltage variation is provided between primary and secondary terminals of photocoupler some current caused by it is fioating capacitance may be generated and result in false operation since current may go through IRED or current may change. If the photocoupler may be used under the circumstances where noise will be generated we recommend to use the bypass capacitors at the both ends of IRED. This product is not designed against irradiation and incorporates non-coherent IRED. Degradation In general, the emission of the IRED used in photocouplers will degrade over time. In the case of long term operation, please take the general IRED degradation (5% degradation over 5 years) into the design consideration. Recommended Foot Print (reference) 6.3.8 2.54.5 (Unit : mm) For additional design assistance, please review our corresponding Optoelectronic Application Notes. 9
Manufacturing Guidelines Soldering Method Reflow Soldering: Reflow soldering should follow the temperature profile shown below. Soldering should not exceed the curve of temperature profile and time. Please don't solder more than twice. ( C) 3 Terminal : 26 C peak ( package surface : 25 C peak) 2 Preheat 5 to 8 C, 2s or less Reflow 22 C or more, 6s or less 2 3 4 (min) Flow Soldering : Due to SHARP's double transfer mold construction submersion in flow solder bath is allowed under the below listed guidelines. Flow soldering should be completed below 26 C and within s. Preheating is within the bounds of to 5 C and 3 to 8s. Please don't solder more than twice. Hand soldering Hand soldering should be completed within 3s when the point of solder iron is below 4 C. Please don't solder more than twice. Other notices Please test the soldering method in actual condition and make sure the soldering works fine, since the impact on the junction between the device and PCB varies depending on the tooling and soldering conditions.
Cleaning instructions Solvent cleaning: Solvent temperature should be 45 C or below Immersion time should be 3 minutes or less PC364NJF Series Ultrasonic cleaning: The impact on the device varies depending on the size of the cleaning bath, ultrasonic output, cleaning time, size of PCB and mounting method of the device. Therefore, please make sure the device withstands the ultrasonic cleaning in actual conditions in advance of mass production. Recommended solvent materials: Ethyl alcohol, Methyl alcohol and Isopropyl alcohol In case the other type of solvent materials are intended to be used, please make sure they work fine in actual using conditions since some materials may erode the packaging resin. Presence of ODC This product shall not contain the following materials. And they are not used in the production process for this product. Regulation substances : CFCs, Halon, Carbon tetrachloride,..-trichloroethane (Methylchloroform) Specific brominated flame retardants such as the PBBOs and PBBs are not used in this product at all. This product shall not contain the following materials banned in the RoHS Directive (22/95/EC). Lead, Mercury, Cadmium, Hexavalent chromium, Polybrominated biphenyls (PBB), Polybrominated diphenyl ethers (PBDE).
Package specification Tape and Reel package. 3 pcs/reel Package materials Carrier tape : A-PET (with anti-static material) Cover tape : PET (three layer system) Reel : PS Carrier tape structure and Dimensions F E D G I J H H A B C 5 MAX. K C D E Dimensions List A B 2. ±.3 5.5 ±..75 ±. 8. ±. H I J K 7.4 ±..3 ±.5 3. ±. 4. ±. 2. ±. (Unit : mm) F G 4. ±. φ.5 +. Reel structure and Dimensions e d g c a f b Dimensions List (Unit : mm) a 37 b 3.5 ±.5 c 8 ±. d 3 ±.5 e 2 ±. f 2. ±.5 g 2. ±.5 Direction of product insertion Pull-out direction [Packing : 3 pcs/reel] 2
Package materials 2. 75 pcs / reel Carrier tape : A-PET (with anti-static material) Cover tape : PET (three layer system) Reel : PS Carrier tape structure and Dimensions F E D G I J H H A B C C D E K Dimensions List A B 2. ±.3 5.5 ±..75 ±. 8. ±. H I J K 7.4 ±..3 ±.5 3. ±. 4. ±. 2. ±. 5 MAX. (Unit : mm) F G 4. ±. φ.5 +. Reel structure and Dimensions e d g c a f b Dimensions List (Unit : mm) a 8 b 3.5 ±.5 c 8 ±. d 3 ±.5 e 2 ±. f 2. ±.5 g 2. ±.5 Direction of product insertion Pull-out direction [Packing : 75pcs/reel] 3
Important Notices The circuit application examples in this publication are provided to explain representative applications of SHARP devices and are not intended to guarantee any circuit design or license any intellectual property rights. SHARP takes no responsibility for any problems related to any intellectual property right of a third party resulting from the use of SHARP's devices. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. SHARP reserves the right to make changes in the specifications, characteristics, data, materials, structure, and other contents described herein at any time without notice in order to improve design or reliability. Manufacturing locations are also subject to change without notice. Observe the following points when using any devices in this publication. SHARP takes no responsibility for damage caused by improper use of the devices which does not meet the conditions and absolute maximum ratings to be used specified in the relevant specification sheet nor meet the following conditions: (i) The devices in this publication are designed for use in general electronic equipment designs such as: --- Personal computers --- Office automation equipment --- Telecommunication equipment [terminal] --- Test and measurement equipment --- Industrial control --- Audio visual equipment --- Consumer electronics (ii) Measures such as fail-safe function and redundant design should be taken to ensure reliability and safety when SHARP devices are used for or in connection with equipment that requires higher reliability such as: --- Transportation control and safety equipment (i.e., aircraft, trains, automobiles, etc.) --- Traffic signals --- Gas leakage sensor breakers --- Alarm equipment --- Various safety devices, etc. (iii) SHARP devices shall not be used for or in connection with equipment that requires an extremely high level of reliability and safety such as: --- Space applications --- Telecommunication equipment [trunk lines] --- Nuclear power control equipment --- Medical and other life support equipment (e.g., scuba). If the SHARP devices listed in this publication fall within the scope of strategic products described in the Foreign Exchange and Foreign Trade Law of Japan, it is necessary to obtain approval to export such SHARP devices. This publication is the proprietary product of SHARP and is copyrighted, with all rights reserved. Under the copyright laws, no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose, in whole or in part, without the express written permission of SHARP. Express written permission is also required before any use of this publication may be made by a third party. Contact and consult with a SHARP representative if there are any questions about the contents of this publication. [E97] 4