MMBZ15VDLT3G MMBZ27VCLT1G. 40 Watt Peak Power Zener Transient Voltage Suppressors. SOT-23 Dual Common Cathode Zeners for ESD Protection

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MMBZ5VDLT, MMBZ7VCLT Preferred s 40 Watt Peak Power Zener Transient Voltage Suppressors SOT- Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common cathode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium. The MMBZ7VCLT can be used to protect a single wire communication network form EMI and ESD transient surge voltages. The MMBZ7VCLT is recommended by the Society of Automotive Engineers (SAE), February 000, J4 Single Wire Can Network for Vehicle Applications specification as a solution for transient voltage problems. Specification Features: SOT- Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration Working Peak Reverse Voltage Range -.8 V, V Standard Zener Breakdown Voltage Range - 5 V, 7 V Peak Power - 40 W @.0 ms (Bidirectional), per Figure 5 Waveform ESD Rating of Class N (exceeding 6 kv) per the Human Body Model Low Leakage < 00 na Flammability Rating: UL 94 V-O Pb-Free Packages are Available Mechanical Characteristics: CASE: Void free, transfer molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 60 C for 0 Seconds SOT- CASE 8 STYLE 9 PIN. ANODE. ANODE. CATHODE ORDERING INFORMATION Package Shipping MMBZ5VDLT SOT- 000/Tape & Reel MMBZ5VDLTG MMBZ5VDLT SOT- 0,000/Tape & Reel MMBZ5VDLTG MMBZ7VCLT SOT- 000/Tape & Reel MMBZ7VCLTG MARKING DIAGRAM XXX M XXX = 5D or 7C M = Date Code = Pb-Free Package (Note: Microdot may be in either location) SOT- SOT- SOT- 000/Tape & Reel 0,000/Tape & Reel 000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD80/D. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 007 November, 007 - Rev. 8 Publication Order Number: MMBZ5VDLT/D

MMBZ5VDLT, MMBZ7VCLT MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation @.0 ms (Note ) @ T L 5 C P pk 40 Watts Total Power Dissipation on FR-5 Board (Note ) @ T A = 5 C Derate above 5 C P D 5.8 mw mw/ C Thermal Resistance Junction-to-Ambient R JA 556 C/W Total Power Dissipation on Alumina Substrate (Note ) @ T A = 5 C Derate above 5 C P D 00.4 mw mw/ C Thermal Resistance Junction-to-Ambient R JA 47 C/W Junction and Storage Temperature Range T J, T stg - 55 to + C Lead Solder Temperature - Maximum (0 Second Duration) T L 60 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. Nonrepetitive current pulse per Figure 5 and derate above T A = 5 C per Figure 6.. FR-5 =.0 x 0.75 x 0.6 in.. Alumina = 0.4 x 0. x 0.04 in., 99.5% alumina ELECTRICAL CHARACTERISTICS (T A = 5 C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins and or and ) I F I Symbol Parameter Maximum Reverse Peak Pulse Current V C V RWM Clamping Voltage @ Working Peak Reverse Voltage V RWM V C V BR I R I T V F V I R Maximum Reverse Leakage Current @ V RWM V BR Breakdown Voltage @ I T I T Test Current V BR Maximum Temperature Coefficient of V BR I F Forward Current Uni-Directional TVS V F Forward Voltage @ I F ELECTRICAL CHARACTERISTICS (T A = 5 C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins and or Pins and ) (V F = 0.9 V Max @ I F = 0 ma) Marking Breakdown Voltage V C @ (Note 5) V RWM I R @ V RWM V BR (Note 4) (V) @ I T V C V BR Volts na Min Nom Max ma V A mv/ C MMBZ5VDLT, G* 5D.8 00 4. 5 5.8.0..9 (V F =. V Max @ I F = 00 ma) Marking Breakdown Voltage V C @ (Note 5) V RWM I R @ V RWM V BR (Note 4) (V) @ I T V C V BR Volts na Min Nom Max ma V A mv/ C MMBZ7VCLT, G* 7C 5.65 7 8.5.0 8.0 6 *The G suffix indicates Pb-Free package available. 4. V BR measured at pulse test current I T at an ambient temperature of 5 C. 5. Surge current waveform per Figure 5 and derate per Figure 6

MMBZ5VDLT, MMBZ7VCLT TYPICAL CHARACTERISTICS (VBR @ I T) BREAKDOWN VOLTAGE (VOLTS) 7 6 5 4-40 MMBZ5VDLT BIDIRECTIONAL UNIDIRECTIONAL + 5 + 85 + 5 (VBR @ I T) BREAKDOWN VOLTAGE (VOLTS) 9 8 7 6 5-55 MMBZ7VCLT BIDIRECTIONAL + 5 + 85 + 5 Figure. Typical Breakdown Voltage Figure. Typical Breakdown Voltage 0000 00 IR (na) 00 0 0. P D, POWER DISSIPATION (mw) 00 00 FR-5 BOARD ALUMINA SUBSTRATE 0.0 0-40 + 5 + 85 + 5 0 5 75 00 5 75 Figure. Typical Leakage Current Figure 4. Steady State Power Derating Curve VALUE (%) 00 t P t r 0 s PEAK VALUE HALF VALUE PULSE WIDTH (t P ) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO % OF. 0 0 4 PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ TA = 5 C 00 90 80 70 60 40 0 0 0 0 0 5 75 00 5 75 00 t, TIME (ms) Figure 5. Pulse Waveform T A, AMBIENT Figure 6. Pulse Derating Curve

MMBZ5VDLT, MMBZ7VCLT TYPICAL APPLICATIONS V Batt ECU Connector * 47 H Bus Single Wire CAN Transceiver Loss of R Load Ground 9.09 k % Protection Circuit C Load Load 0 pf 0% GND *ESD Protection - MMBZ7VCLT or equivalent. May be located in each ECU (C Load needs to be reduced accordingly) or at a central point near the DLC. Figure 7. Single Wire CAN Network Figure is the recommended solution for transient EMI/ESD protection. This circuit is shown in the Society of Automotive Engineers February, 000 J4 Single Wire CAN Network for Vehicle Applications specification (Figure 6, page ). Note: the dual common anode zener configuration shown above is electrically equivalent to a dual common cathode zener configuration. 4

MMBZ5VDLT, MMBZ7VCLT PACKAGE DIMENSIONS SOT- (TO-6) CASE 8-08 ISSUE AN A E A D e b HE SEE VIEW C L L VIEW C c 0.5 NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 98.. CONTROLLING DIMENSION: INCH.. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 8-0 THRU -07 AND -09 OBSOLETE, NEW STANDARD 8-08. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A 0.89.00. 0.05 0.040 0.044 A 0.0 0.06 0.0 0.00 0.00 0.004 b 0.7 0.44 0. 0.05 0.08 0.00 c 0.09 0. 0.8 0.00 0.005 0.007 D.80.90.04 0.0 0.4 0.0 E.0.0.40 0.047 0.05 0.055 e.78.90.04 0.070 0.075 0.08 L 0.0 0.0 0.0 0.004 0.008 0.0 L 0.5 0.54 0.69 0.04 0.0 0.09 H E.0.40.64 0.08 0.094 0.04 STYLE 9: PIN. ANODE. ANODE. CATHODE SOLDERING FOOTPRINT* 0.95 0.07 0.95 0.07.0 0.079 0.9 0.05 0.8 0.0 SCALE 0: mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 56, Denver, Colorado 807 USA Phone: 0-675-75 or 800-44-860 Toll Free USA/Canada Fax: 0-675-76 or 800-44-867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-8-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 4 790 90 Japan Customer Focus Center Phone: 8--577-8 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MMBZ5VDLT/D