New Product 8S2TH6I-M 2L TO-22 PRODUCT SUMMARY t rr (AV) 2 ns 8 A 6 V FEATURES Hyperfast recovery time Low forward voltage drop Low leakage current 75 C operating junction temperature Compliant to RoHS directive 22/95/EC Halogen-free according to IEC 6249-2-2 definition Designed and qualified for industrial level DESCRIPTION 8S2TH6I-M 6 V series are the state of the art tandem hyperfast recovery rectifiers: the new insulated 2 pin TO-22 package provide benchmark thermal resistance that coupled with excellent switching performance and low forward voltage drop allow this device to provide 8 A DC at 2 C case temperature. Specially designed for CCM PFC application, these devices show incomparable performance in every current intensive hard switching application. Optimized reverse recovery stored charge enables downsizing of boosting switch and cooling system. Increased operating frequency make possible use of smaller reactive elements. Cost effective PFC application is then possible with high efficiency over wide input voltage range and loading factor. The new ceramic insulated package warranty insulation up to 2 kv and features easy mounting together with not insulated parts, with minimum effect on R thjc. ABSOLUTE MAXIMUM RATINGS FOR BOTH DIODES PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Repetitive peak reverse voltage RM 6 V DC forward current 5 % duty cycle, rect. waveforms, T C = 2 C 8 Non-repetitive peak surge current SM T C = 25 C 4 A Operating junction and storage temperatures, T Stg - 55 to 75 C ELECTRICAL SPECIFICATIONS FOR BOTH DIODES ( = 25 C unless otherwise specified) Breakdown voltage, blocking voltage V BR, I R = µa 6 - - Forward voltage V F = 8 A, = 25 C - 2. 2.3 = 8 A - 2.7 3. = 8 A, = 5 C -.9 2. Reverse leakage current I R = 25 C, = rated - 7 5 µa = rated - < = 5 C, = rated - 27 8 Junction capacitance C T = 6 V -.5 - pf V Document Number: 9349 For technical questions, contact: diodestech@vishay.com www.vishay.com Revision: 26-Aug-9
8S2TH6I-M New Product DYNAMIC RECOVERY CHARACTERISTICS FOR BOTH DIODES ( = 25 C unless otherwise specified) Reverse recovery time t rr = 25 C - 6 ns =. A, d /dt = - 5 A/µs, = 3 V - 3 2 = 25 C - 23 3 Peak recovery current I RRM T = 8 A J = 25 C -.5 2.5 d /dt = - 2 A/µs = 25 C = 39 V - 2.8 3.7 A = 25 C - 7 5 Reverse recovery charge Q rr = 25 C - 35 5 nc THERMAL - MECHANICAL SPECIFICATIONS FOR BOTH DIODES Maximum junction and storage temperature range, T Stg - 55-75 C Thermal resistance, R thjc - 2.3 2.85 junction to case Thermal resistance, Mounting surface, flat, smooth R thcs -. - case to heatsink and greased C/W Approximate weight Mounting torque - 2. - g -.7 - oz. Marking device Case style 2L TO-22 8S2TH6I 6. (5.) - 2 () kgf cm (lbf in) www.vishay.com For technical questions, contact: diodestech@vishay.com Document Number: 9349 2 Revision: 26-Aug-9
New Product 8S2TH6I-M - Instantaneous Forward Current (A) = 75 C = 5 C = 25 C = 25 C.5.5 2.5 3.5 4.5 5.5 6.5 I R - Reverse Current (µa).. 75 C 5 C 25 C 75 C C 25 C. 2 3 4 5 6 V F - Forward Voltage Drop (V) - Reverse Voltage (V) Fig. - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage C T - Junction Capacitance (pf) 2 3 4 5 6 - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Z thjc - Thermal Impedance ( C/W). Single pulse (thermal resistance) D =.5 D =.2 D =. D =.5 D =.2 D =....... t - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics Document Number: 9349 For technical questions, contact: diodestech@vishay.com www.vishay.com Revision: 26-Aug-9 3
8S2TH6I-M New Product Allowable Case Temperature ( C) 2 5 5 Square wave (D = 5) 5 % rated applied See note () DC 2 4 6 8 2 4 t rr (ns) = 39 V = 8 A, 25 C = 8 A, 25 C (AV) - Average Forward Current (A) d /dt (A/µs) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 7 - Typical Reverse Recovery Time vs. d /dt 3 = 39 V Average Power Loss (W) 25 2 5 5 DC RMS limit D =. D =.2 D =.5 D =. D =.2 D =.5 Q rr (nc) = 8 A, 25 C = 8 A, 25 C 2 4 6 8 2 4 (AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics d /dt (A/µs) Fig. 8 - Typical Stored Charge vs. d /dt Note () Formula used: T C = - (Pd +Pd REV ) x R thjc ; Pd = Forward power loss = (AV) x V FM at ((AV) /D) (see fig. 6); Pd REV = Inverse power loss = x I R ( - D); I R at = 5 % rated Dimensions Part marking information LINKS TO RELATED DOCUMENTS www.vishay.com/doc?957 www.vishay.com/doc?957 www.vishay.com For technical questions, contact: diodestech@vishay.com Document Number: 9349 4 Revision: 26-Aug-9
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