Document: W314, Rev: C Transient Voltage Suppressor Features 4 Watts peak pulse power (t p =8/2μs) Protects Two Line Pairs (Four lines) Low capacitance Low leakage current Low operating and clamping voltage Solid-state Punch through Avalanche TVS process technology IEC COMPATIBILITY (EN61-4) SO-8 IEC 61-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC 61-4-4 (EFT) 4A (5/5ns) IEC 61-4-5 (Lightning) 24A (8/2μs) Mechanical Characteristics Applications JEDEC SO-8 package Molding compound flammability rating: UL 94V- Marking: Marking Code Packaging: Tape and Reel RoHS/WEEE Compliant Switching Systems WAN/LAN Equipment Desktops, Serves, Notebooks& Handhelds 1/1 Ethernet Base Stations Audio/Video Inputs Schematic & PIN Configuration SO-8 (Top View) 28 WAYON Corporation www.way-on.com 1 / 8
Absolute Maximum Rating Rating Sy mbol Value Units Peak Pulse Power(t p =8/2μs) see Figure1& Figure2 P PP 4 Watts Peak Pulse Current(t p =8/2μs) I PP 24 A Lead Soldering Temperature T L 26(1sec) C Operating Temperature T J -55 to + 125 C Storage Temperature T STG -55 to +15 C Electrical Parameters (T=25 ) Symbol IPP Parameter Maximum Reverse Peak Pulse Current VC VRWM Clamping Voltage @ IPP Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM VPT Punch-through Breakdown Voltage @ IT V SB I SB Snap-Back Voltage @ I SB Snap-Back Current IPT Test Current VPTF IPTF Forward Punch-through Breakdown Voltage @ I F Forward Test Current Electrical Characteristics(T=25 ) WS2.8-4LVU Parameter Sy mbol Conditions Minimum Typical Maximum Units Reverse Stand-Off Voltage V RWM 2.8 V Punch-through Vo ltage V PT I PT =2μA, 3. V Reverse Leakage Current I R V RWM =2.8V 1 μa Snap-Back Voltage V SB I SB =5mA, 2.8 V 28 WAYON Corporation www.way-on.com
Electrical Characteristics (Cont.) Parameter Sy mbol Conditions Minimum Typical Maximum Units Clamping Voltage ( Note1) V C I PP =2A, tp=8/2μs 6 V Clamping Voltage V C I PP =5A, tp=8/2μs 9.5 V Clamping Voltage V C I PP =24A, tp=8/2μs 17 V Junction Capacitance C j V R = V, f = 1MHz 3. pf Steer Diodes Reverse Breakdown Voltage V BR I T =1µA See Note4 5 V Reverse Leakage Current I R V RWM = 2.8V See Note4 1 μa Forward Voltage (Note 3) V F I F =1A See Note5 2 V NOTES: 1. Device measured between pin 1 to 2, pin 3 to 4, pin 5 to 6 and pin 7 to 8. 2. The 8/2μs test pulse wave is shown in figure3, and the clamping voltage vs. I PP is shown in figure4. 3. The Junction Capacitance vs. Reverse Voltage is shown in figure5. 4. Each Steer Diode integrated in the reversely connected with a TVS Diode in series 5. The Forward Voltage vs. Forward Current for Steer diode is shown in figure6. 28 WAYON Corporation www.way-on.com 3 / 8
Typical Characteristics Figure 1: Peak Pulse Power vs. Pulse Time Figure 2: Power Derating Curve Ppp Peak Pulse Power - Ppp(KW) 1 1.1.1 4w 8/2µs Waveform Percent of Rated Power for Ipp 11 1 9 8 7 6 5 4 3 2 1 t d Pulse Duration - µs Ambient Temperature - T A ( ) Figure3: Pulse Waveform Figure 4: Clamping Voltage vs. Peak Pulse Current Percent Ipp 11 1 9 8 7 6 5 4 3 2 1 e -1 td=ipp/2 Time (µs) Waveform Paramters tr=8µs td=2µs Clamping Voltage VC (V) 18 16 14 12 1 8 6 4 2 Test Waveform Paramters tr=8µs td=2µs 5 1 15 2 25 3 Peak Pulse Current I PP (A) Figure 5: Capacitance vs. Reverse Voltage Figure 6: Forward Voltage vs. Forward Current Capacitance Cj (pf) 3 25 2 15 1 5 f=1 MHz Forward Voltage VF(V) 16 14 12 1 8 6 4 2 Test Waveform Paramters tr=8µs td=2µs.5 1 1.5 2 2.5 3 Reverse Voltage V R (V) 5 1 15 2 25 3 Forward Current I F (A) 28 WAYON Corporation www.way-on.com 4 / 8
Application Information The is designed to pro viding p rotection for electronic equi pment that is susceptible to damage caused by Electrostatic Discharg e (ESD), Electrical Fast Transients (E FT) and tertiary light ning effects. This product is offered in a unidirectional configurati on and provides both common-mode and differential-mode protection. Unidirectional Common-mode Protection The protects four lines in a common-mo de configuration. Pin 1 is connected to Line1. Pin 3 is connected to Line2 Pin 5 is connected to Line3. Pin 7 is connected to Line4 Other Pins are connected to ground. Bidirectional Common-mode Protection The device provide two lines of bidirectional protection in a common-mode configuration. Pin1 &Pin8 are connected to Line1 Pin4&Pin5 are connected to Line2 Other Pins are connected to ground. Bidirectional Differential-mode Protection The device provide four lines of bidirectional protection in a differential-mode configuration. Pin1 & Pin8 is connected to Line1 Pin2 & Pin7 is connected to Line2 Pin3 & Pin6 is connected to Line3 Pin4 & Pin5 is connected to Line4 Line1&Line2 compose Line Pair1,Line3&Line4 compose Line Pair2 28 WAYON Corporation www.way-on.com 5 / 8
Main Application 1/1 Ethernet Protection Circuit 28 WAYON Corporation www.way-on.com 6 / 8
Main Application (Cont) quad Transformer Gigabit Ethernet Protection Circuit 28 WAYON Corporation www.way-on.com 7 / 8
Outline Drawing SO-8 PACKAGE OUTLINE DIMENSIONS SYMBOL INCHES MI LIMETER MIN MAX MIN MAX A. 54.68 1.35 1.75 a1. 4.8.1.25 a2. 5.6 1.25 1.5 D. 189.196 4.8 5. F. 15.157 3.8 4. E. 229.244 5.8 6.2 e. 5BSC.5BSC 1.27BSC 1.27BSC L. 16.49.4 1.25 θ 1 1 DIMENSIONS DIM INCHES MILLIMETERS C.25 5.2 G.16 4.6 P.5 1.26 X.15.38 Y.45 1.14 Z.291 7.4 Notes 1. This land pattern is for reference purposes only consult your manufacturing group to ensure your company's manufacturing guidelines are met. 2. Reference ipc-sm-782a.. Marking Codes Part Number Marking Code WS2.8-4LVU 28 WAYON Corporation www.way-on.com 8 / 8