NTB6P, NTBV6 Power OSFET -6 V, -8. A P Channel, D PAK Features Designed for Low R DS(on) Withstands High Energy in Avalanche and Commutation odes AEC Q Qualified NTBV6 These Devices are Pb Free and are RoHS Compliant Applications Power Supplies PW otor Control Converters Power anagement V (BR)DSS 6 V R DS(on) TYP m @. V P Channel D G I D AX 8. A AXIU RATINGS ( unless otherwise noted) S Parameter Symbol Value Unit Drain to Source Voltage V DSS 6 V Gate to Source Voltage V GS V Continuous Drain Current (Note ) Power Dissipation (Note ) Steady State Steady State T A = C I D 8. A T A = C P D 88 W Pulsed Drain Current t p = s I D A Operating Junction and Storage Temperature T J, T STG Single Pulse Drain to Source Avalanche Energy (V DD = V, V GS =. V, I PK = A, L =. mh, R G = ) Lead Temperature for Soldering Purposes (/8 in from case for s) THERAL RESISTANCE RATINGS to 7 C E AS 8 mj T L 6 C Parameter Symbol ax Unit Junction to Case (Drain) Steady State R JC.7 C/W Stresses exceeding aximum Ratings may damage the device. aximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. When surface mounted to an FR board using pad size (Cu Area.7 in ).. When surface mounted to an FR board using the minimum recommended pad size (Cu Area. in ). D PAK CASE 8B STYLE x A Y WW G ARKING DIAGRA & PIN ASSIGNENT = P or blank = Assembly Location = Year = Work Week = Pb Free Package ORDERING INFORATION Device Package Shipping NTB6PTG NTBV6TG Gate D PAK (Pb Free) D PAK (Pb Free) Drain NTB6xG AYWW Drain Source 8 / Tape & Reel 8 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8/D. Semiconductor Components Industries, LLC, August, Rev. Publication Order Number: NTB6P/D
NTB6P, NTBV6 ELECTRICAL CHARACTERISTICS ( unless otherwise noted) Characteristic Symbol Test Condition in Typ ax Unit OFF CHARACTERISTICS Drain to Source Breakdown Voltage V (Br)DSS V GS = V, I D = A 6 V Drain to Source Breakdown Voltage Temperature Coefficient V (Br)DSS /T J 6 mv/ C Zero Gate Voltage Drain Current I DSS V GS = V. A V DS = 6 V Gate to Source Leakage Current I GSS V DS = V, V GS = V na ON CHARACTERISTICS (Note ) Gate Threshold Voltage V GS(th) V GS = V DS, I D = A... V Drain to Source On Resistance R DS(on) V GS =. V, I D = 8. A V GS =. V, I D = 7 A m Forward Transconductance g FS V DS = V, I D = 8. A S Drain to Source On Voltage V DS(on) V GS =. V, I D = 8. A. V CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C iss 7 9 Output Capacitance C oss V GS = V, f =. Hz, V DS = V Reverse Transfer Capacitance C rss 67 Total Gate Charge Q G(TOT) Gate to Source Charge Q GS V GS =. V, V DS = 8 V, I D = 7 A. Gate to Drain Charge Q GD 7. SWITCHING CHARACTERISTICS (Note ) Turn On Delay Time t d(on). Rise Time t r V GS =. V, V DD = V, 8 Turn Off Delay Time t d(off) I D = 7 A, R G = 9. 9 8 Fall Time t f 7 DRAIN SOURCE DIODE CHARACTERISTICS Forward Diode Voltage V SD VGS = V I S = 7 A Reverse Recovery Time t rr.. V. Charge Time t a V GS = V, di S /dt = A/ s, 9 Discharge Time t b I S = 7 A Reverse Recovery Charge Q RR. nc. Pulse Test: Pulse Width s, Duty Cycle %.. Switching characteristics are independent of operating junction temperatures. 6 pf nc ns ns
NTB6P, NTBV6 V GS = V V GS = 9 V V GS = 6 V V GS = 8 V V V GS = 7 V GS =. V V GS = V V GS =. V V GS = V V GS =. V V GS = V V DS = V T J = C 6 7 8 9 6 7 8 9 V GS, GATE TO SOURCE VOLTAGE (VOLTS) Figure. On Region Characteristics Figure. Transfer Characteristics R DS(on), DRAIN TO SOURCE RESISTANCE ( ).......... V GS =. V T J = C R DS(on), DRAIN TO SOURCE RESISTANCE ( )....7. V GS =. V...7 V GS = V.. 6 9 8 Figure. On Resistance vs. Drain Current and Temperature Figure. On Resistance vs. Drain Current and Gate Voltage R DS(on), DRAIN TO SOURCE RESISTANCE (NORALIZED).8.6...8.6.. I D = 8. A V GS =. V 7 T J, JUNCTION TEPERATURE ( C) Figure. On Resistance Variation with Temperature I DSS, LEAKAGE (na) V GS = V T J = C 6 Figure 6. Drain to Source Leakage Current vs. Voltage
NTB6P, NTBV6 C, CAPACITANCE (pf) t, TIE (ns) 8 6 8 6 GATE TO SOURCE OR DRAIN TO SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation V GS = V V DS = V C iss C rss V GS V DS t r t f t d(off) R G, GATE RESISTANCE ( ) V GS, GATE TO SOURCE VOLTAGE (VOLTS) I S, SOURCE CURRENT (APS) E AS, SINGLE PULSE DRAIN TO SOURCE AVALANCHE ENERGY (mj) Q g, TOTAL GATE CHARGE (nc) t d(on) V DD = V I D = 7 A V GS =. V...7...7 Figure 9. Resistive Switching Time Variation vs. Gate Resistance V GS = V SINGLE PULSE T C = C C rss dc ms ms s C iss C oss Figure. aximum Rated Forward Biased Safe Operating Area 8 6 8 V GS I D = 7 A Figure 8. Gate to Source and Drain to Source Voltage vs. Total Charge V GS = V V SD, SOURCE TO DRAIN VOLTAGE (VOLTS) Figure. Diode Forward Voltage vs. Current I D = A R DS(on) Limit Thermal Limit s Package Limit.. 7 7 V DS Q GS Q T Q DS T J, STARTING JUNCTION TEPERATURE ( C) Figure. aximum Avalanche Energy vs. Starting Junction Temperature 6 6
NTB6P, NTBV6 r(t), EFFECTIVE TRANSIENT THERAL RESISTANCE (NORALIZED) D =... SINGLE PULSE...... t, TIE (s). Figure. Thermal Response di/dt I S t rr t a t b TIE t p. I S I S Figure. Diode Reverse Recovery Waveform
NTB6P, NTBV6 PACKAGE DIENSIONS T SEATING PLANE B G S D PL. (.) T B K C H D PAK CASE 8B ISSUE K A E V W J W NOTES:. DIENSIONING AND TOLERANCING PER ANSI Y., 98.. CONTROLLING DIENSION: INCH.. 8B THRU 8B OBSOLETE, NEW STANDARD 8B. INCHES ILLIETERS DI IN AX IN AX A..8 8.6 9.6 B.8. 9.6.9 C.6.9.6.8 D....89 E.... F.. 7.87 8.89 G. BSC. BSC H.8...79 J.8..6.6 K.9..9.79 L..7..8.8. 7. 8. N.97 REF. REF P.79 REF. REF R.9 REF.99 REF S.7.6.6.88 V.... VARIABLE CONFIGURATION ZONE R N U STYLE : PIN. GATE. DRAIN. SOURCE. DRAIN P L L L F F F VIEW W W VIEW W W VIEW W W SOLDERING FOOTPRINT*.9 8.8 6. X. X.6.8 PITCH DIENSIONS: ILLIETERS *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and ounting Techniques Reference anual, SOLDERR/D. 6
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