Doc No. TT4-ZZ-0200 Revision. Established : 206-0-07 Revised : 206-2-07 Gate resistor installed Dual N-channel For lithium-ion secondary battery protection circuits Unit: mm Features Source-source On-state Resistance:RSS(on) typ. = 8.3 mw ( VGS = 3.8 V ) CSP ( Chip Size Package ) Halogen-free / RoHS compliant ( EU RoHS / UL-94 V-0 / MSL : Level ) Marking Symbol: 3S Packaging Embossed type ( Thermo-compression sealing ) : 0000 pcs / reel (standard ) Absolute Maximum Ratings Parameter Symbol Rating Unit Source-source Voltage Gate-source Voltage VSS VGS 20 2 V V DC * IS 6.2 A Source Current DC *2 IS2. A DC *3 IS3 4. A Pulsed *4 ISp 62 A DC * PD 0.44 W Total Power Dissipation DC *2 PD2. W DC *3 PD3 2.4 W Channel Temperature Storage Temperature Range Tch Tstg 0 - to +0 C C. Source- (FET) 4. Gate2 (FET2) 2. Source-2 (FET). Source2-2 (FET2) 3. Gate (FET) 6. Source2- (FET2) Panasonic MLGA006-W-320-RA JEITA - Code - Equivalent circuit FET2 FET,6(S2) 4(G2) Thermal Characteristics Thermal Resistance (ch-a) Rth * 284 C / W Rth *2 83 C / W Rth *3 2 C / W,2(S) 3(G) Note * Mounted on FR4 board ( 2.4 mm 2.4 mm t.0 mm ). FR4 board partially covered with copper pad ( 30 mm 2 area, 36 mm thickness ). *2 Mounted on FR4 board ( 2.4 mm 2.4 mm t.0 mm ). FR4 board fully covered with copper pad ( 60 mm 2 area, 3 mm thickness ). *3 Mounted on Ceramic board ( 70 mm 70 mm t.0 mm ). *4 t = 0 ms, Duty Cycle % of
Doc No. TT4-ZZ-0200 Revision. Established : 206-0-07 Revised : 206-2-07 Electrical Characteristics 3 C Parameter Symbol Conditions Min Typ Max Unit Source-source Breakdown Voltage VSSS IS = ma, VGS = 0 V 20 V Zero Gate Voltage Source Current ISSS VSS = 20 V, VGS = 0 V.0 ma Gate-source Leakage Current IGSS VGS = 8 V, VSS = 0 V 0 IGSS2 VGS = V, VSS = 0 V.0 ma Gate-source Threshold Voltage Vth IS = 0.7 ma, VSS = 0 V 0.3 0.9.4 V RSS(on) IS = 3. A, VGS = 4. V.2 7.9 0.3 Source-source On-state Resistance RSS(on)2 IS = 3. A, VGS = 3.8 V. 8.3 0.8 RSS(on)3 IS = 3. A, VGS = 3. V.8 9.2 4.7 mw RSS(on)4 IS = 3. A, VGS = 2. V 6.3. 2.8 Body Diode Forward Voltage VF(s-s) IF = 3. A, VGS = 0 V 0.7.2 V Input Capacitance * Ciss 600 Output Capacitance * Coss VSS = 0 V, VGS = 0 V, f = khz 6 pf Reverse Transfer Capacitance * Crss 30 Turn-on Delay Time *,*2 td(on) VDD = 0 V, VGS = 0 to 4.0 V 0.4 Rise Time *,*2 tr IS = 3. A 0.9 ms Turn-off Delay Time *,*2 td(off) VDD = 0 V, VGS = 4.0 to 0 V 2. Fall Time *,*2 tf IS = 3. A.4 ms Total Gate Charge * Qg VDD = 0 V 3 Gate-source Charge * Qgs VGS = 0 to 4.0 V.2 nc Gate-drain Charge * Qgd IS = 6.2 A 4.0 Note Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. * Guaranteed by design, not subject to production testing. *2 Measurement circuit for Turn-on Delay Time / Rise Time / Turn-off Delay Time / Fall Time. VDD = 0 V IS = 3. A RL = 3.2 W S2 Vout Vin 90 % Rg 0 % G2 Vin 0 W G Rg Vout 90 % 0 % 0 % 90 % 4 V 0 V PW = 0 ms D.C. % 0 W S td(on) tr td(off) tf 2 of
Doc No. TT4-ZZ-0200 Revision. Established : 206-0-07 Revised : 206-2-07 6 4 3 2 0 VGS = 4. V Technical Data ( reference ) IS - VSS * RSS(on) - IS * 2. V 3. V 3.8 V 0 0.02 0.04 0.06 0.08 0. Source-source Voltage, VSS ( V ) Source-source On-state Resistance RSS (on) ( mw ) 4 2 0 8 6 VGS = 4. V 3.8 V 3. V 2. V 2 3 4 6 0. IS - VGS * RSS(on) - VGS * 30 0.0 0. 0.7 0.9..3. VSS = 0 V Source-source On-state Resistance RSS (on) ( mw ) 2 20 0 0 IS = 3. A 2 3 4 Diode Forward Current, IF ( A ) 0. 0.0 IF - VF(s-s) * IGS - VGS * 0 0.2 0.4 0.6 0.8.2 Body Diode Forward Voltage, VF(s-s) ( V ) Gate-source Leakage Current, IGS ( A ).E-04.E-0.E-06.E-07.E-08.E-09.E-0 0 0 3 of
Doc No. TT4-ZZ-0200 Revision. Established : 206-0-07 Revised : 206-2-07 Zero Gate Voltage Source Current, ISS ( A ).E-04.E-0.E-06.E-07.E-08.E-09.E-0.E- ISS - VSS * 0 20 2 30 Technical Data ( reference ) Source-source Voltage, VSS ( V ) 6 4 3 2 0 Dynamic Input / Output Characteristics VDD = 0 V IS = 6.2 A 0 0 20 Gate Charge, Qg ( nc ) Thermal Resistance, Rth ( C / W ) Normalized Effective Transient Thermal Impedance 000 00 0 Rth - tsw 0.00 0.0 0. 0 00 000 0 0. 0.0 Duty Cycle = 0. 0. 0.02 Single Pulse Thermal Response *2 0.0 (*4) 0.00 0.00 0.0 0. 0 00 000 (*2) Pulse Width, tsw ( s ) (*3) Square Wave Pulse Duration ( s ) 00 0 Limited by RSS(on) ( VGS = 3.8 V ) Safe Operating Area *2 Absolute Maximum Rating 00 ms ms 3 ms ms 00 ms s 0. DC 0.0 0. 0 00 Source-source Voltage, VSS ( V ) Note * Pulse measurement. *2 Mounted on FR4 board ( 2.4 mm 2.4 mm t.0 mm ). FR4 board partially covered with copper pad ( 30 mm 2 area, 36 mm thickness ). *3 Mounted on FR4 board ( 2.4 mm 2.4 mm t.0 mm ). FR4 board fully covered with copper pad ( 60 mm 2 area, 3 mm thickness ). *4 Mounted on Ceramic board ( 70 mm 70 mm t.0 mm ). 4 of
Doc No. TT4-ZZ-0200 Revision. Established : 206-0-07 Revised : 206-2-07 Outline Unit: mm Land & Stencil Pattern ( reference ) Unit: mm of
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