TVS (transient voltage suppressor) Bi-directional, 5.5 V,.2 pf, 5, RoHS and halogen free compliant Feature list ESD/transient protection of high speed data lines according to: - IEC6-4-2 (ESD): ±25 kv (air/contact discharge) - IEC6-4-4 (EFT): ±2.5 kv/±5 A (5/5 ns) - IEC6-4-5 (Surge): ±2.5 A (8/2 μs) Bi-directional working voltage up to: V RWM = ±5.5 V Line capacitance: C L =.2 pf (typical) at f = MHz Clamping voltage: V CL = 2 V (typical) at I TLP = 6 A with R DYN =.8 Ω (typical) Very low reverse current: I R < na (typical) Small form factor SMD size 5, low profile (.43 mm x.23 mm x.5 mm) [3] Bi-directional, symmetric I/V characteristic for optimized design and assembly, recommendations for PCB assembly see [2] Potential applications USB 2./3., Firewire, DVI, HDMI, S-ATA, DisplayPort Mobile HDMI link, MDDI, MIPI, SWP/NFC Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/2/22 Device information a ) Pin configuration b ) Schematic diagram Figure Table Pin configuration and schematic diagram Part information Type Package Configuration Marking code ESD9-B-W5 WLL-2-2 line, bi-directional C ) The device has no marking on the device backside. The marking code is on pad side. Datasheet Please read the Important Notice and Warnings at the end of this document Revision.4 www.infineon.com
Table of contents Table of contents Feature list............................................................................. Potential applications.................................................................. Product validation...................................................................... Device information..................................................................... Table of contents....................................................................... 2 Maximum ratings....................................................................... 3 2 Electrical characteristics................................................................ 4 3 Typical characteristic diagrams......................................................... 6 4 Package information.................................................................. 2 4. WLL-2-2 package....................................................................... 2 5 References............................................................................ 3 Revision history....................................................................... 3 Disclaimer............................................................................ 4 Datasheet 2 Revision.4
Maximum ratings Maximum ratings Note: T A = 25 C, unless otherwise specified. Table 2 Maximum ratings Parameter Symbol Values Unit Reverse working voltage V RWM ±5.5 V ESD (air/contact) discharge ) V ESD ±25 kv Peak pulse power 2) P PK 35 W Peak pulse current 2) I PP ±2.5 A Operating temperature range T OP -55 to 25 C Storage temperature T stg -65 to 5 C Attention: Stresses above the maximum values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings. Exceeding only one of these values may cause irreversible damage to the component. V ESD according to IEC6-4-2 (R = 33 Ω, C = 5 pf discharge network) 2 Stress pulse: 8/2 μs current waveform according to IEC6-4-5 Datasheet 3 Revision.4
Electrical characteristics 2 Electrical characteristics Note: T A = 25 C, unless otherwise specified. Device is electrically symmetrical. IF I PP VF... Forward voltage IF... Forward current VR... Reverse voltage IR... Reverse current I TLP R DYN ΔV ΔI ΔI ΔV VR V CL V TLP V t ΔV V h ΔI V RWM R DYN I R ΔV ΔI I T I R I T I PP I TLP V RWM V h V t V CL V TLP VF RDYN... Dynamic resistance VRWM... Reverse working voltage max. Vt... Trigger voltage Vh... Holding voltage VCL... Clamping voltage VTLP... TLP voltage IR... Reverse leakage current Ipp... Peak pulse current ITLP... TLP current IT... Test current Figure 2 Definitions of electrical characteristics IR Diode_Characteristic_Curve_with_snapback_Bi-directional.svg Datasheet 4 Revision.4
Electrical characteristics Table 3 DC characteristics Parameter Symbol Values Unit Note or test condition Min. Typ. Max. Trigger voltage )2) V t 6. 9.5 V Holding voltage 3) V h 6. 7.5 9.5 V I T = ma Reverse current I R < 2 na V R = 5.5 V Table 4 AC characteristics Parameter Symbol Values Unit Note or test condition Min. Typ. Max. Line capacitance C L.2.3 pf V R = V, f = MHz.5 V R = V, f = GHz Table 5 ESD and Surge characteristics Parameter Symbol Values Unit Note or test condition Min. Typ. Max. Clamping voltage 4) V CL 2 23 V I TLP = 6 A, t p = ns 3 34 I TLP = 3 A, t p = ns Clamping voltage 5) 8 I PP = A, t p = 8/2 µs 4 I PP = 2.5 A, t p = 8/2 µs Dynamic resistance 4) R DYN.8 Ω t p = ns Verified by design 2 Voltage forced 3 Current forced 4 Please refer to application note AN2 [], TLP parameters: Z = 5 Ω, t p = ns, t r =.6 ns 5 Stress pulse: 8/2 μs current waveform according to IEC6-4-5 Datasheet 5 Revision.4
Typical characteristic diagrams 3 Typical characteristic diagrams Note: T A = 25 C, unless otherwise specified. -6-7 -8 I R [A] -9 - - -2-3 -5-4 -3-2 - 2 3 4 5 V R [V] Figure 3 Reverse leakage current: I R = f(v R ) C L [ff] 4 375 35 325 3 275 25 225 2 75 5 25 MHz GHz -5-4 -3-2 - 2 3 4 5 V R [V] Figure 4 Line capacitance: C L = f(v R ), f = MHz, GHz Datasheet 6 Revision.4
Typical characteristic diagrams 75 5 Scope: 6 GHz, 2 GS/s V CL [V] 25 75 5 25 V CL-max-peak = 42 V V CL-3ns-peak = 6 V -25-5 5 5 2 25 3 35 4 45 t p [ns] Figure 5 Clamping voltage (ESD): V CL = f(t), 8 kv positive pulse (according to IEC6-4-2) 25 Scope: 6 GHz, 2 GS/s V CL [V] -25-5 -75 - -25-5 V CL-max-peak = -39 V V CL-3ns-peak = -6 V -75-5 5 5 2 25 3 35 4 45 t p [ns] Figure 6 Clamping voltage (ESD): V CL = f(t), 8 kv negative pulse (according to IEC6-4-2) Datasheet 7 Revision.4
Typical characteristic diagrams 75 5 Scope: 6 GHz, 2 GS/s V CL [V] 25 75 5 25 V CL-max-peak = 7 V V CL-3ns-peak = 25 V -25-5 5 5 2 25 3 35 4 45 t p [ns] Figure 7 Clamping voltage (ESD): V CL = f(t), 5 kv positive pulse (according to IEC6-4-2) 25 Scope: 6 GHz, 2 GS/s V CL [V] -25-5 -75 - -25-5 V CL-max-peak = -65 V V CL-3ns-peak = -25 V -75-5 5 5 2 25 3 35 4 45 t p [ns] Figure 8 Clamping voltage (ESD): V CL = f(t), 5 kv negative pulse (according to IEC6-4-2) Datasheet 8 Revision.4
Typical characteristic diagrams 5 4 ESD9-B Series R DYN 25 2 3 R DYN =.8 Ω 5 2 I TLP [A] - 5-5 Equivalent V IEC [kv] -2 - -3 R DYN =.8 Ω -5-4 -2-5 -25-5 -4-3 -2-2 3 4 5 V TLP [V] Figure 9 Clamping voltage (TLP): I TLP = f(v TLP ) [] Datasheet 9 Revision.4
Typical characteristic diagrams 3 2.5 2.5.5 I PP [A] -.5 - -.5-2 -2.5-3 -5 - -5 5 5 V CL [V] Figure Clamping voltage (Surge): I PP = f(v CL ) (according to IEC6-4-5) [] Datasheet Revision.4
Typical characteristic diagrams Insertion Loss ( S 2 ) [db] 2 3 4 5 6 7 8 9 ESD9-B-W5-2. Frequency [GHz] Figure Insertion loss vs. frequency in a 5 Ω system Datasheet Revision.4
Package information 4 Package information 4. WLL-2-2 package Note: Dimensions in mm. Top view Bottom view.5±..23±.3.28 (.5) 2.2 ±.2.3 ±.2.43 ±.3 SG-WLL-2-2-PO V Figure 2 WLL-2-2 package outline.23.23.3.3.5.5 Copper Solder mask Stencil apertures SG-WLL-2-2-FP V Figure 3 WLL-2-2 footprint.2.5 8 2.28.2 SG-WLL-2-2-TP V Figure 4 WLL-2-2 packing Marking on pad-side Type code Type code 2 2 Figure 5 WLL-2-2 marking example (marking code see Device information) Datasheet 2 Revision.4
References 5 References [] Infineon AG - Application note AN2: Effective ESD protection design at system level using VF-TLP characterization methodology [2] Infineon AG - Recommendations for Printed Circuit Board Assembly of Infineon WLL Packages http://www.infineon.com/packageinformation_wll [3] Infineon AG - Application note AN392: TVS diodes in ChipScalePackage reduce size and save cost Revision history Revision history: Rev.3, 27--7 Page or Item Subjects (major changes since previous revision) Revision.4, Chapter 2 Max value of electrical parameter Vt added All Minor editorial changes Datasheet 3 Revision.4
Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition Published by Infineon Technologies AG 8726 Munich, Germany 28 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-hbd524242845 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury