N-Channel V (D-S) and P-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) MAX. I D (A) Q g (TYP.) N-Channel P-Channel -.33 at V GS =.5 V.5 a. nc.8 at V GS =.5 V.5 a. at V GS =.8 V.5 a.5 at V GS = -.5 V -.5 a.7 at V GS = -.5 V -.5 a. at V GS = -.8 V -.5 a.5 at V GS = -.5 V -.5 PowerPAK SC-7-L Dual S G 5 D D 9.5 nc FEATURES TrenchFET Power MOSFETs Typical ESD protection: N-channel V P-channel V % R g tested Material categorization: For definitions of compliance please see www.vishay.com/doc?999 APPLICATIONS Portable devices such as smart phones, tablet PCs and mobile computing - Load switches - Power management - DC/DC converters D S D.5 mm Top View.5 5 mm 3 D Bottom View G S G G Marking Code: EK Ordering Information: -T-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T A = 5 C, unless otherwise noted) PARAMETER SYMBOL N-CHANNEL P-CHANNEL UNIT Drain-Source Voltage V DS - V Gate-Source Voltage V GS ± 8 T C = 5 C.5 a -.5 a T C = 7 C.5 a -.5 a Continuous Drain Current (T J = 5 C) I D T A = 5 C.5 a,b,c -.5 a,b,c T A = 7 C.5 a,b,c -.5 a,b,c A Pulsed Drain Current (t = μs) I DM -5 T C = 5 C.5 a -.5 a Source Drain Current Diode Current I S T A = 5 C. b,c -. b,c T C = 5 C 7.8 7.8 T C = 7 C 5 5 Maximum Power Dissipation P D W T A = 5 C.9 b,c.9 b,c T A = 7 C. b,c. b,c Operating Junction and Storage Temperature Range T J, T stg -55 to 5 C Soldering Recommendations (Peak Temperature) d,e S3-35-Rev. A, 3-Dec-3 Document Number: 93 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
THERMAL RESISTANCE RATINGS N-CHANNEL P-CHANNEL PARAMETER SYMBOL TYP. MAX. TYP. MAX. Maximum Junction-to-Ambient b,f t 5 s R thja 5 5 5 5 Maximum Junction-to-Case (Drain) Steady State R thjc.5.5 Notes a. Package limited. b. Surface mounted on " x " FR board. c. t = 5 s. d. See solder profile (www.vishay.com/ppg?7357). The PowerPAK SC-7 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is C/W. UNIT C/W SPECIFICATIONS (T J = 5 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static V GS = V, I D = 5 μa N-Ch - - Drain-Source Breakdown Voltage V DS V GS = V, I D = -5 μa P-Ch - - - I D = 5 μa N-Ch - 8 - V DS Temperature Coefficient V DS /T J I D = -5 μa P-Ch - -5 - I D = 5 μa N-Ch - -.5 - V GS(th) Temperature Coefficient V GS(th) /T J I D = -5 μa P-Ch -.5 - V DS = V GS, I D = 5 μa N-Ch. - Gate Threshold Voltage V GS(th) V DS = V GS, I D = -5 μa P-Ch -. - - Gate-Source Leakage I GSS V DS = V, V GS = ±.5 V Zero Gate Voltage Drain Current On-State Drain Current b I DSS I D(on) V DS = V, V GS = ± 8 V N-Ch - - ±.5 P-Ch - - ± 3 N-Ch - - ± 5 P-Ch - - ± 3 V DS = V, V GS = V N-Ch - - V DS = - V, V GS = V P-Ch - - - V DS = V, V GS = V, T J = 55 C N-Ch - - V DS = - V, V GS = V, T J = 55 C P-Ch - - - V DS 5 V, V GS =.5 V N-Ch - - V DS -5 V, V GS = -.5 V P-Ch - - - V GS =.5 V, I D = 5. A N-Ch -.3.8 V GS = -.5 V, I D = -3.8 A P-Ch -..5 V GS =.5 V, I D =.8 A N-Ch -.7.33 Drain-Source On-State Resistance b R DS(on) V GS = -.5 V, I D = -3.3 A P-Ch -.57.7 V GS =.8 V, I D =.5 A N-Ch -.35. V GS = -.8 V, I D = - A P-Ch -.75. V GS = -.5 V, I D = -.5 A P-Ch -.97.5 V DS = V, I D = 5. A N-Ch - 3 - Forward Transconductance b g fs V DS = - V, I D = -3. A P-Ch - - V mv/ C V μa A S S3-35-Rev. A, 3-Dec-3 Document Number: 93 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SPECIFICATIONS (T J = 5 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Dynamic a Input Capacitance C iss N-Ch - 55 - N-Channel P-Ch - 77 - Output Capacitance C oss V DS = V, V GS = V, f = MHz N-Ch - 9 - P-Channel P-Ch - 9 - pf Reverse Transfer Capacitance C rss V DS = - V, V GS = V, f = MHz N-Ch - 5 - P-Ch - 8 - V DS = V, V GS = 8 V, I D =.8 A N-Ch -.5 Total Gate Charge Q g V DS = - V, V GS = -8 V, I D = -.9 A P-Ch -.3 5 N-Ch -. 9.5 N-Channel P-Ch - 9.5.5 V DS = V, V GS =.5 V, I D =.8 A nc N-Ch -.8 - Gate-Source Charge Q gs P-Channel P-Ch -. - Gate-Drain Charge Q gd V DS = - V, V GS = -.5 V, I D = -.9 A N-Ch -. - P-Ch -.3 - Gate Resistance R g f = MHz N-Ch.8 8 P-Ch 5. Turn-On Delay Time Rise Time t d(on) t r V DD = V, R L =. N-Ch - I D 5. A, V GEN =.5 V, R g = P-Ch - 5 5 N-Ch - 5 N-Channel P-Ch - 5 5 Turn-Off Delay Time t d(off) P-Channel V DD = - V, R L =. I D -3.9 A, V GEN = -.5 V, R g = N-Ch - 5 P-Ch - 3 5 Fall Time t f N-Ch - P-Ch - 5 Turn-On Delay Time t d(on) N-Ch - 5 N-Channel P-Ch - 7 Rise Time t r V DD = V, R L =.3 N-Ch - 5 I D 5. A, V GEN = 8 V, R g = P-Ch - Turn-Off Delay Time t d(off) P-Channel V DD = - V, R L =. I D -3.9 A, V GEN = -8 V, R g = N-Ch - 3 P-Ch - 5 Fall Time t f N-Ch - 5 P-Ch - 5 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S T C = 5 C N-Ch - -.5 P-Ch - - -.5 Pulse Diode Forward Current a N-Ch - - I SM P-Ch - - -5 I S =.8 A, V GS = V N-Ch -.8. Body Diode Voltage V SD I S = -3.9 A, V GS = V P-Ch - -.9 -. Body Diode Reverse Recovery Time t rr N-Ch - 5 5 P-Ch - 3 5 Body Diode Reverse Recovery Charge Q rr N-Channel N-Ch - I F = 5. A, di/dt = A/μs, T J = 5 C P-Ch - 5.5 Reverse Recovery Fall Time t a P-Channel N-Ch - 3 - I F = -3.9 A, di/dt = - A/μs, T J = 5 C P-Ch - 7.5 - N-Ch - - Reverse Recovery Rise Time t b P-Ch - 5.5 - Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 3 μs, duty cycle %. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S3-35-Rev. A, 3-Dec-3 3 Document Number: 93 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9 ns A V ns nc ns
N-CHANNEL TYPICAL CHARACTERISTICS (5 C, unless otherwise noted) - T J = 5 C -3 - Gate Current (ma) 3 - Gate Current (A) - -5 - -7 T J = 5 C I GSS I GSS -8 T J = 5 C -9 3 9 5 Gate Current vs. Gate-Source Voltage - 3 9 5 Gate Current vs. Gate-Source Voltage V GS =5VthruV 8 8 V GS =.5V T C = 5 C V GS =V T C = 5 C..5..5..5 3. V DS - Drain-to-Source Voltage (V) Output Characteristics T C = - 55 C..3..9..5 Transfer Characteristics.8 8 - On-Resistance (Ω) R DS(on)... V GS =.8V V GS =.5V V GS =.5V C - Capacitance (pf) C rss C oss C iss. 5 5 On-Resistance vs. Drain Current and Gate Voltage 3 9 V DS - Drain-to-Source Voltage (V) Capacitance S3-35-Rev. A, 3-Dec-3 Document Number: 93 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
N-CHANNEL TYPICAL CHARACTERISTICS (5 C, unless otherwise noted) 8.5 - Gate-to-Source Voltage (V) V GS I D =.8A V DS =3V V DS =V V DS =9.V R DS(on) - On-Resistance (Normalized)..3....9.8 V GS =.8V;I D =.5A V GS =.5V,.5V;I D =5.5A 8 Q g - Total Gate Charge (nc) Gate Charge.7-5 - 5 5 5 75 5 5 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature.8 - Source Current (A) I S T J = 5 C T J = 5 C - On-Resistance (Ω) R DS(on)... I D =.5A; T J = 5 C I D = 5. A; T J = 5 C I D =.5A;T J = 5 C I D = 5. A; T J = 5 C......8.. V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage. 3 5 On-Resistance vs. Gate-to-Source Voltage.8.7. I D = 5 µa 5 (V) V GS(th).5 Power (W). 5.3. - 5-5 5 5 75 5 5 T J - Temperature ( C)... Pulse (s) Threshold Voltage Single Pulse Power (Junction-to-Ambient) S3-35-Rev. A, 3-Dec-3 5 Document Number: 93 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
N-CHANNEL TYPICAL CHARACTERISTICS (5 C, unless otherwise noted) Limited by R DS(on) * Limited by I DM - Drain Current (A) I D. T A = 5 C Single Pulse µs ms ms ms s,s DC BVDSS Limited.. V DS - Drain-to-Source Voltage (V) *V GS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient 5 8 9 3 Package Limited Power Dissipation (W) 5 5 75 5 5 T C - Case Temperature ( C) Current Derating* 5 5 75 5 5 T C - Case Temperature ( C) Power Derating * The power dissipation P D is based on T J(max.) = 5 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S3-35-Rev. A, 3-Dec-3 Document Number: 93 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
N-CHANNEL TYPICAL CHARACTERISTICS (5 C, unless otherwise noted) Duty Cycle =.5 Normalized Effective Transient Thermal Impedance.. Notes:..5. P DM t t t. Duty Cycle, D = t. Per Unit Base = R th JA = C/W Single Pulse 3. T JM - T A = P DM Z (t) th JA. Surface Mounted. - -3 - - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance Duty Cycle =.5...5. Single Pulse. - -3 - - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case S3-35-Rev. A, 3-Dec-3 7 Document Number: 93 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
P-CHANNEL TYPICAL CHARACTERISTICS (5 C, unless otherwise noted) 5 - I G - Gate Current (ma) 3 T J = 5 C I G - Gate Current (A) - -3 - -5 - -7 T J = 5 C T J = 5 C -8 3 9 5 Gate Current vs. Gate-to-Source Voltage -9 3 9 5 Gate Current vs. Gate-to-Source Voltage 5 V GS = 5 V thru.5 V 5 V GS =V 9 V GS =.5V 3 T C = 5 C 3 V GS =V..5..5..5 3. V DS - Drain-to-Source Voltage (V) Output Characteristics T C = 5 C T C = - 55 C..3..9..5 Transfer Characteristics. V GS =.5V 5 R DS(on) - On-Resistance (Ω)...8. V GS =.8V V GS =.5V V GS =.5V C - Capacitance (pf) 9 3 C oss C iss 3 9 5 On-Resistance vs. Drain Current and Gate Voltage C rss 8 V DS - Drain-to-Source Voltage (V) Capacitance S3-35-Rev. A, 3-Dec-3 8 Document Number: 93 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
P-CHANNEL TYPICAL CHARACTERISTICS (5 C, unless otherwise noted) 8.5 I D =.9A V DS =V V DS =5V V DS =V (Normalized) R DS(on) - On-Resistance..3....9.8 V GS =.5V;.5V;I D =3.8A V GS =.8V;I D =A V GS =.5V;I D =.5A 3 9 5 8 Q g - Total Gate Charge (nc) Gate Charge.7-5 - 5 5 5 75 5 5 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature.8.5 I S - Source Current (A) T J = 5 C T J = 5 C R DS(on) - On-Resistance (Ω)..9. I D = 3.8 A; T J = 5 C I D = A; T J = 5 C I D = 3.8 A; T J = 5 C I D = A; T J = 5 C.3.....8.. V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage. 3 5 On-Resistance vs. Gate-to-Source Voltage.75.5 5 V GS(th) (V).55.5 I D = 5 μa Power (W).35 5.5-5 - 5 5 5 75 5 5... T J - Temperature ( C) Threshold Voltage Pulse (s) Single Pulse Power, Junction-to-Ambient S3-35-Rev. A, 3-Dec-3 9 Document Number: 93 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
P-CHANNEL TYPICAL CHARACTERISTICS (5 C, unless otherwise noted). Limited by R DS(on)* T A = 5 C Single Pulse Limited by I DM BVDSS Limited μs ms ms ms s, s DC.. V DS - Drain-to-Source Voltage (V) * V GS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient 8 8 Package Limited Power Dissipation (W) 5 5 75 5 5 T C - Case Temperature ( C) Current Derating* 5 5 75 5 5 T C - Case Temperature ( C) Power Derating * The power dissipation P D is based on T J(max.) = 5 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S3-35-Rev. A, 3-Dec-3 Document Number: 93 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
P-CHANNEL TYPICAL CHARACTERISTICS (5 C, unless otherwise noted) Duty Cycle =.5 Normalized Effective Transient Thermal Impedance....5. Single Pulse t t t. Duty Cycle, D = t. Per Unit Base = R th JA = C/W 3. T JM - T A = P DM Z (t) th JA. Surface Mounted. - -3 - - Square Wave Pulse Duration (s) Notes: P DM Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance Duty Cycle =.5...5. Single Pulse. - -3 - - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?93. S3-35-Rev. A, 3-Dec-3 Document Number: 93 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
Package Information PowerPAK SC7-L e b e b PIN PIN PIN3 PIN PIN PIN3 E E PIN PIN5 PIN PIN PIN5 PIN K3 K K K K K BACKSIDE VIEW OF SINGLE D A BACKSIDE VIEW OF DUAL Notes:. All dimensions are in millimeters. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating C A E K K L L D E D D D K K E E3 z Z DETAIL Z SINGLE PAD DUAL PAD DIM MILLIMETERS INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max A.75.75.8.7.3.3.75.75.8.7.3.3 A -.5 -. -.5 -. b.3.3.38.9..5.3.3.38.9..5 C.5..5..8..5..5..8. D.98.5.5.78.8.85.98.5.5.78.8.85 D.85.95.5.33.37..53.3.73...8 D.35.35.335.5.9.3 E.98.5.5.78.8.85.98.5.5.78.8.85 E..5..55.59.3.85.95.5.33.37. E.35.395.5...8 E3.5.75.55.7.9. e.5 BSC. BSC.5 BSC. BSC K.75 TYP. TYP.75 TYP. TYP K. TYP. TYP.3 TYP.3 TYP K. TYP.9 TYP.5 TYP. TYP K3.5 TYP.9 TYP K.355 TYP. TYP L.75.75.375.7..5.75.75.375.7..5 T.5..5... ECN: C-73 Rev. C, -Aug-7 DWG: 593 Document Number: 73 -Aug-7 www.vishay.com
Application Note 8 RECOMMENDED PAD LAYOUT FOR PowerPAK SC7-L Dual.5 (.98).3 (.).35 (.).35 (.3).75 (.).3 (.).5 (.98).95 (.37).75 (.9). (.).75 (.).5 (.). (.3) Dimensions in mm (inches) APPLICATION NOTE Return to Index www.vishay.com Document Number: 787 Revision: 8-Oct-3
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