Low Power Tri-Band UMTS LNA (2100, 1900, 800 MHz) Data Sheet Revision 1.1, 2011-03-16 RF & Protection Devices
Edition 2011-03-16 Published by Infineon Technologies AG 81726 Munich, Germany 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
BGA734L16 Low Power Tri-Band UMTS LNA (2100, 1900, 800 MHz) Revision History: 2011-03-16, Revision 1.1 Previous Revision: 2008-01-25, Revision 1.0 Page Subjects (major changes since last revision) 10 Updated Logic Level Limit Trademarks of Infineon Technologies AG AURIX, BlueMoon, C166, CanPAK, CIPOS, CIPURSE, COMNEON, EconoPACK, CoolMOS, CoolSET, CORECONTROL, CROSSAVE, DAVE, EasyPIM, EconoBRIDGE, EconoDUAL, EconoPIM, EiceDRIVER, eupec, FCOS, HITFET, HybridPACK, I²RF, ISOFACE, IsoPACK, MIPAQ, ModSTACK, my-d, NovalithIC, OmniTune, OptiMOS, ORIGA, PRIMARION, PrimePACK, PrimeSTACK, PRO-SIL, PROFET, RASIC, ReverSave, SatRIC, SIEGET, SINDRION, SIPMOS, SMARTi, SmartLEWIS, SOLID FLASH, TEMPFET, thinq!, TRENCHSTOP, TriCore, X-GOLD, X-PMU, XMM, XPOSYS. Other Trademarks Advance Design System (ADS) of Agilent Technologies, AMBA, ARM, MULTI-ICE, KEIL, PRIMECELL, REALVIEW, THUMB, µvision of ARM Limited, UK. AUTOSAR is licensed by AUTOSAR development partnership. Bluetooth of Bluetooth SIG Inc. CAT-iq of DECT Forum. COLOSSUS, FirstGPS of Trimble Navigation Ltd. EMV of EMVCo, LLC (Visa Holdings Inc.). EPCOS of Epcos AG. FLEXGO of Microsoft Corporation. FlexRay is licensed by FlexRay Consortium. HYPERTERMINAL of Hilgraeve Incorporated. IEC of Commission Electrotechnique Internationale. IrDA of Infrared Data Association Corporation. ISO of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB of MathWorks, Inc. MAXIM of Maxim Integrated Products, Inc. MICROTEC, NUCLEUS of Mentor Graphics Corporation. Mifare of NXP. MIPI of MIPI Alliance, Inc. MIPS of MIPS Technologies, Inc., USA. murata of MURATA MANUFACTURING CO., MICROWAVE OFFICE (MWO) of Applied Wave Research Inc., OmniVision of OmniVision Technologies, Inc. Openwave Openwave Systems Inc. RED HAT Red Hat, Inc. RFMD RF Micro Devices, Inc. SIRIUS of Sirius Satellite Radio Inc. SOLARIS of Sun Microsystems, Inc. SPANSION of Spansion LLC Ltd. Symbian of Symbian Software Limited. TAIYO YUDEN of Taiyo Yuden Co. TEAKLITE of CEVA, Inc. TEKTRONIX of Tektronix Inc. TOKO of TOKO KABUSHIKI KAISHA TA. UNIX of X/Open Company Limited. VERILOG, PALLADIUM of Cadence Design Systems, Inc. VLYNQ of Texas Instruments Incorporated. VXWORKS, WIND RIVER of WIND RIVER SYSTEMS, INC. ZETEX of Diodes Zetex Limited. Last Trademarks Update 2010-10-26 Data Sheet 3 Revision 1.1, 2011-03-16
Table of Contents Table of Contents Table of Contents................................................................ 4 1 Features........................................................................ 5 List of Figures................................................................... 7 List of Tables.................................................................... 8 2.......................................................... 9 2.1 Absolute Maximum Ratings......................................................... 9 2.2 Thermal Resistance............................................................... 9 2.3 ESD Integrity..................................................................... 9 2.4 DC Characteristics............................................................... 10 2.5 Band Select / Gain Control Truth Table............................................... 10 2.6 Logic Signal Characteristics; = 25 C.............................................. 11 2.7 Switching Times................................................................. 11 2.8 Measured RF Characteristics UMTS Band 5........................................... 12 2.9 Measured RF Characteristics UMTS Band 2........................................... 13 2.10 Measured RF Characteristics UMTS Band 1........................................... 14 2.11 Measured Performance Low Band High Gain Mode vs. Frequency.......................... 15 2.12 Measured Performance Low Band High Gain Mode vs. Temperature........................ 17 2.13 Measured Performance Low Band Low Gain Mode vs. Frequency.......................... 18 2.14 Measured Performance Low Band Low Gain Mode vs. Temperature........................ 20 2.15 Measured Performance Mid Band High Gain Mode vs. Frequency.......................... 21 2.16 Measured Performance Mid Band High Gain Mode vs. Temperature........................ 23 2.17 Measured Performance Mid Band Low Gain Mode vs. Frequency.......................... 24 2.18 Measured Performance Mid Band Low Gain Mode vs. Temperature......................... 26 2.19 Measured Performance High Band High Gain Mode vs. Frequency......................... 27 2.20 Measured Performance High Band High Gain Mode vs. Temperature....................... 29 2.21 Measured Performance High Band Low Gain Mode vs. Frequency.......................... 30 2.22 Measured Performance High Band Low Gain Mode vs. Temperature........................ 32 3 Application Circuit and Block Diagram............................................. 33 3.1 UMTS Bands 1, 2 and 5 Application Circuit Schematic................................... 33 3.2 Pin Description.................................................................. 34 3.3 Application Board................................................................ 35 4 Physical Characteristics......................................................... 37 4.1 Package Footprint................................................................ 37 4.2 Package Dimensions............................................................. 38 Data Sheet 4 Revision 1.1, 2011-03-16
Low Power Tri-Band UMTS LNA (2100, 1900, 800 MHz) BGA734L16 1 Features Main features: Gain: 15 / -8 db in high / low gain Noise figure: 1.2 db in high gain mode Low Band (5, 6, 8, FOMA800) Mid Band (2, 3, 9, FOMA1700) High Band (1, 4, 10) High and low gain modes support Supply current: 3.5 / 0.65 ma in high / low gain modes Standby mode (<10 μa typ) 1 kv HBM ESD protection Small leadless TSLP-16-1 package (2.3 x 2.3 x 0.39 mm) Pb-free (RoHS compliant) package Description The BGA734L16 is a highly flexible tri-band (2100, 1900, 850/800 MHz) low noise amplifier MMIC for worldwide use. Based on Infineon s proprietary and cost-effective SiGe:C technology, the BGA734L16 features dynamic gain control, temperature stabilization, standby mode, and 1 kv ESD protection on-chip and matching off chip. Because the matching is off chip, the 1900 MHz path can be converted into a 2100 MHz path and vice versa by optimizing the input and output matching network. This document specifies device performance for the most common band combination - UMTS bands I, II, and V. Product Name Package Chip Marking BGA734L16 TSLP-16-1 T1520 BGA734 Data Sheet 5 Revision 1.1, 2011-03-16
Features 5 n/c 4 RFGNDH 3 VCC 2 VGS n/c 1 6 RFINM 16 RFOUTM 7 RFINH 15 RFOUTH 8 RFGNDM Biasing & Logic Circuitry 14 RFOUTL 9 n/c 10 RFINL 11 VEN2 12 VEN1 n/c 13 BGA734L16_Chip.vsd Figure 1 Block Diagram of Triple-Band LNA Data Sheet 6 Revision 1.1, 2011-03-16
List of Figures List of Figures Figure 1 Block Diagram of Triple-Band LNA.................................................. 6 Figure 2 Application Circuit with Chip Outline (Top View)...................................... 33 Figure 3 Application Board Layout on 3-layer FR4............................................ 35 Figure 4 Cross-Section View of Application Board............................................ 35 Figure 5 Detail of Application Board Layout................................................. 36 Figure 6 Recommended Footprint and Stencil Layout for the TSLP-16-1 Package................... 37 Figure 7 Package Outline (Top, Side and Bottom View)....................................... 38 Data Sheet 7 Revision 1.1, 2011-03-16
List of Tables List of Tables Table 1 Absolute Maximum Ratings....................................................... 9 Table 2 Thermal Resistance............................................................. 9 Table 3 ESD Integrity.................................................................. 9 Table 4 DC Characteristics, = -30... 85 C.............................................. 10 Table 5 Band Select Truth Table, V CC = 2.8 V.............................................. 10 Table 6 Gain Control Truth Table, V CC = 2.8 V.............................................. 10 Table 7 Typical Switching Times; = -30... 85 C.......................................... 11 Table 8 Typical Characteristics 800 MHz Band, = 25 C, VCC = 2.8 V......................... 12 Table 9 Typical Characteristics 1900 MHz Band, = 25 C, VCC = 2.8 V........................ 13 Table 10 Typical Characteristics 2100 MHz Band, = 25 C, VCC = 2.8 V........................ 14 Table 11 Bill of Materials............................................................... 33 Table 12 Pin Definition and Function...................................................... 34 Data Sheet 8 Revision 1.1, 2011-03-16
2 2.1 Absolute Maximum Ratings Table 1 Absolute Maximum Ratings Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Supply voltage V CC -0.3 3.6 V Supply current I CC 5 ma Pin voltage V PIN -0.3 V CC +0.3 V All pins except RF input pins. Pin voltage RF input pins V RFIN -0.3 0.9 V RF input power P RFIN 4 dbm Junction temperature T j 150 C Ambient temperature range -30 85 C Storage temperature range T STG -65 150 C 2.2 Thermal Resistance Table 2 Thermal Resistance Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Thermal resistance junction to soldering point R thjs 110 K/W 2.3 ESD Integrity Table 3 ESD Integrity Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. ESD hardness HBM 1) V ESD-HBM 1000 V All pins 1) According to JESD22-A114 Data Sheet 9 Revision 1.1, 2011-03-16
2.4 DC Characteristics Table 4 DC Characteristics, = -30... 85 C Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Supply voltage V CC 2.7 2.8 3.0 V Supply current high gain I CCHG 3.5 ma All bands mode Supply current low gain I CCLG 650 μa All bands mode Supply current standby I CCOFF 0.1 2 μa mode Logic level high V HI 1.4 2.8 V VEN1 and VEN2 Logic level low V LOW 0.0 0.5 V Logic currents VEN I ENL 0.2 μa VEN1 and VEN2 I ENH 10.0 μa Logic currents VGS I GSL 0.1 μa VGS I GSH 5.0 μa 2.5 Band Select / Gain Control Truth Table Table 5 Band Select Truth Table, V CC =2.8V Band I Band II Band V Power Down VCC H H H H VEN1 H H L L VEN2 H L H L Table 6 Gain Control Truth Table, V CC =2.8V High Gain Low Gain VGS H L Data Sheet 10 Revision 1.1, 2011-03-16
2.6 Logic Signal Characteristics; = 25 C Current consumption of logic inputs VEN1, VEN2, VGS Logic currents I EN1,2 = f(v EN1,2 ) V CC = 2.8 V 12 Logic currents I GS = f(v GS ) V CC = 2.8 V 6 10 8 4 I EN1,2 [µa] 6 I GS [µa] 4 2 2 0 0 0.5 1 1.5 2 2.5 3 V EN1,2 [V] 0 0 0.5 1 1.5 2 2.5 3 V GS [V] 2.7 Switching Times Table 7 Typical Switching Times; = -30... 85 C Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Gainstep settling time t GS 1.2 μs Switching LG HG all bands Bandselect settling time t BS 1.2 μs Switching from any band to a different band Data Sheet 11 Revision 1.1, 2011-03-16
2.8 Measured RF Characteristics UMTS Band 5 Table 8 Typical Characteristics 800 MHz Band, = 25 C, VCC = 2.8 V 1) Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Pass band range 869 894 MHz Input power range -100 0 dbm Current consumption I CCHG 3.5 ma High gain mode I CCLG 0.65 ma Low gain mode Gain S 21HG 15.2 db High gain mode S 21LG -6.8 db Low gain mode Reverse Isolation 2) S 12HG -34 db High gain mode S 12LG -6.8 db Low gain mode Noise figure NF HG 1.2 db High gain mode NF LG 6.9 db Low gain mode Input return loss 2) S 11HG -13 db 50 Ω, high gain mode S 11LG -18 db 50 Ω, low gain mode Output return loss 2) S 22HG -24 db 50 Ω, high gain mode 1) Performance based on application circuit in Figure 2 on Page 33 2) Verification based on AQL; random production test. 3) Guaranteed by device design; not tested in production. S 22LG -11 db 50 Ω, low gain mode Stability factor 3) k >2.1 DC to 10 GHz; all gain modes Input compression point 2) IP 1dBHG -12 dbm High gain mode IP 1dBLG -6 dbm Low gain mode Inband IIP3 2) f 1 - f 2 = 1 MHz P f1 = P f2 = -25 dbm IIP3 HG -6 IIP3 LG 5 dbm High gain mode Low gain mode Data Sheet 12 Revision 1.1, 2011-03-16
2.9 Measured RF Characteristics UMTS Band 2 Table 9 Typical Characteristics 1900 MHz Band, = 25 C, VCC = 2.8 V 1) Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Pass band range 1930 1990 MHz Input power range -100 0 dbm Current consumption I CCHG 3.4 ma High gain mode I CCLG 0.65 ma Low gain mode Gain S 21HG 16.5 db High gain mode S 21LG -6.9 db Low gain mode Reverse Isolation 2) S 12HG -35 db High gain mode S 12LG -7 db Low gain mode Noise figure NF HG 1.0 db High gain mode NF LG 6.8 db Low gain mode Input return loss 2) S 11HG -13 db 50 Ω, high gain mode S 11LG -12 db 50 Ω, low gain mode Output return loss 2) S 22HG -20 db 50 Ω, high gain mode 1) Performance based on application circuit in Figure 2 on Page 33 2) Verification based on AQL; random production test. 3) Guaranteed by device design; not tested in production. S 22LG -17 db 50 Ω, low gain mode Stability factor 3) k >2.0 DC to 10 GHz; all gain modes Input compression point 2) IP 1dBHG -10 dbm High gain mode IP 1dBLG -4 dbm Low gain mode Inband IIP3 2) f 1 - f 2 = 1 MHz P f1 = P f2 = -26 dbm IIP3 HG -5 IIP3 LG 6 dbm High gain mode Low gain mode Data Sheet 13 Revision 1.1, 2011-03-16
2.10 Measured RF Characteristics UMTS Band 1 Table 10 Typical Characteristics 2100 MHz Band, = 25 C, VCC = 2.8 V 1) Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Pass band range 2110 2170 MHz Input power range -100 0 dbm Current consumption I CCHG 3.5 ma High gain mode I CCLG 0.65 ma Low gain mode Gain S 21HG 16.5 db High gain mode S 21LG -7.7 db Low gain mode Reverse Isolation 2) S 12HG -36 db High gain mode S 12LG -8 db Low gain mode Noise figure NF HG 1.1 db High gain mode NF LG 7.4 db Low gain mode Input return loss 2) S 11HG -13 db 50 Ω, high gain mode S 11LG -27 db 50 Ω, low gain mode Output return loss 2) S 22HG -18 db 50 Ω, high gain mode 1) Performance based on application circuit in Figure 2 on Page 33 2) Verification based on AQL; random production test. 3) Guaranteed by device design; not tested in production. S 22LG -9 db 50 Ω, low gain mode Stability factor 3) k >1.8 DC to 10 GHz; all gain modes Input compression point 2) IP 1dBHG -11 dbm High gain mode IP 1dBLG -4 dbm Low gain mode Inband IIP3 2) f 1 - f 2 = 1 MHz P f1 = P f2 = -26 dbm IIP3 HG -6 IIP3 LG 7 dbm High gain mode Low gain mode Data Sheet 14 Revision 1.1, 2011-03-16
2.11 Measured Performance Low Band High Gain Mode vs. Frequency =25 C, V CC = 2.8 V, V GS = 2.8 V, V EN1 = 0 V, V EN2 = 2.8 V Power Gain S 21 = f ( f ) Power Gain Wideband S 21 = f ( f ) 18 20 17.5 17 10 Power Gain [db] 16.5 16 15.5 15 14.5 30 C 25 C 85 C Power Gain [db] 0 20 14 13.5 30 13 0.86 0.87 0.88 0.89 0.9 40 0 2 4 6 8 Matching S 11 = f ( f ), S 22 = f ( f ) Gainstep HG - LG ΔS 21 = f ( f ) 0 24 5 23.5 23 S 11 S 11, S 22 [db] 15 20 25 S 22 Delta Gain [db] 22.5 22 21.5 30 C 25 C 85 C 30 21 35 20.5 40 0.86 0.87 0.88 0.89 0.9 20 0.86 0.87 0.88 0.89 0.9 Data Sheet 15 Revision 1.1, 2011-03-16
Noise Figure NF = f ( f ) Input Compression P 1dB = f ( f ) NF [db] 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 0.86 0.87 0.88 0.89 0.9 P1dB [dbm] 8 9 11 12 13 14 0.86 0.87 0.88 0.89 0.9 Data Sheet 16 Revision 1.1, 2011-03-16
2.12 Measured Performance Low Band High Gain Mode vs. Temperature V CC = 2.8 V, V GS = 2.8 V, V EN1 = 0 V, V EN2 = 2.8 V Power Gain S 21 = f ( ) Supply Current I CC = f ( ) Power Gain [db] 19 18 17 16 15 14 13 I CC [ma] 4 3.9 3.8 3.7 3.6 3.5 3.4 3.3 3.2 3.1 3 Noise Figure NF = f ( ) Input Compression P 1dB = f ( ) 1.8 4 NF [db] 1.6 1.4 1.2 1 0.8 0.6 P1dB [dbm] 6 8 12 14 0.4 16 Data Sheet 17 Revision 1.1, 2011-03-16
2.13 Measured Performance Low Band Low Gain Mode vs. Frequency = 25 C, V CC = 2.8 V, V GS = 0 V, V EN1 = 0 V, V EN2 = 2.8 V Power Gain S 21 = f ( f ) Power Gain Wideband S 21 = f ( f ) 5 0 Power Gain [db] 5.5 6 6.5 7 7.5 8 8.5 30 C 25 C 85 C Power Gain [db] 20 30 40 50 9 0.86 0.87 0.88 0.89 0.9 60 0 2 4 6 8 Matching S 11 = f ( f ), S 22 = f ( f ) Noise Figure NF = f ( f ) 0 9 5 8.5 S 22 8 S 11, S 22 [db] 15 20 25 S 11 NF [db] 7.5 7 6.5 30 6 35 5.5 40 0.86 0.87 0.88 0.89 0.9 5 0.86 0.87 0.88 0.89 0.9 Data Sheet 18 Revision 1.1, 2011-03-16
Input Compression P 1dB = f ( f ) 2 3 P1dB [dbm] 4 5 6 7 8 0.86 0.87 0.88 0.89 0.9 Data Sheet 19 Revision 1.1, 2011-03-16
2.14 Measured Performance Low Band Low Gain Mode vs. Temperature V CC = 2.8 V, V GS = 0 V, V EN1 = 0 V, V EN2 = 2.8 V Power Gain S 21 = f ( ) Supply Current I CC = f ( ) Power Gain [db] 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 I CC [ma] 0.8 0.75 0.7 0.65 0.6 0.55 0.5 Noise Figure NF = f ( ) Input Compression P 1dB = f ( ) NF [db] 10 9.5 9 8.5 8 7.5 7 6.5 6 5.5 5 P1dB [dbm] 0 1 2 3 4 5 6 7 8 9 Data Sheet 20 Revision 1.1, 2011-03-16
2.15 Measured Performance Mid Band High Gain Mode vs. Frequency = 25 C, V CC = 2.8 V, V GS = 2.8 V, V EN1 = 2.8 V, V EN2 = 0 V Power Gain S 21 = f ( f ) Power Gain Wideband S 21 = f ( f ) 18 17.5 17 30 C 20 10 Power Gain [db] 16.5 16 15.5 15 14.5 25 C 85 C Power Gain [db] 0 20 14 13.5 30 13 1.93 1.94 1.95 1.96 1.97 1.98 1.99 40 0 2 4 6 8 Matching S 11 = f ( f ), S 22 = f ( f ) Gainstep HG - LG ΔS 21 = f ( f ) 0 26 5 25.5 25 S 11, S 22 [db] 15 20 25 S 11 S 22 Delta Gain [db] 24.5 24 23.5 30 C 25 C 30 23 35 22.5 85 C 40 1.93 1.94 1.95 1.96 1.97 1.98 1.99 22 1.93 1.94 1.95 1.96 1.97 1.98 1.99 Data Sheet 21 Revision 1.1, 2011-03-16
Noise Figure NF = f ( f ) Input Compression P 1dB = f ( f ) NF [db] 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 1.93 1.94 1.95 1.96 1.97 1.98 1.99 P1dB [dbm] 8 9 11 12 13 14 1.93 1.94 1.95 1.96 1.97 1.98 1.99 Data Sheet 22 Revision 1.1, 2011-03-16
2.16 Measured Performance Mid Band High Gain Mode vs. Temperature V CC = 2.8 V, V GS = 2.8 V, V EN1 = 2.8 V, V EN2 = 0 V Power Gain S 21 = f ( ) Supply Current I CC = f ( ) Power Gain [db] 19 18 17 16 15 14 13 I CC [ma] 4 3.9 3.8 3.7 3.6 3.5 3.4 3.3 3.2 3.1 3 Noise Figure NF = f ( ) Input Compression P 1dB = f ( ) 1.8 4 NF [db] 1.6 1.4 1.2 1 0.8 0.6 P1dB [dbm] 6 8 12 14 0.4 16 Data Sheet 23 Revision 1.1, 2011-03-16
2.17 Measured Performance Mid Band Low Gain Mode vs. Frequency = 25 C, V CC = 2.8 V, V GS = 0 V, V EN1 = 2.8 V, V EN2 = 0 V Power Gain S 21 = f ( f ) Power Gain Wideband S 21 = f ( f ) 5 0 Power Gain [db] 5.5 6 6.5 7 7.5 8 8.5 30 C 25 C 85 C Power Gain [db] 20 30 40 50 9 1.93 1.94 1.95 1.96 1.97 1.98 1.99 60 0 2 4 6 8 Matching S 11 = f ( f ), S 22 = f ( f ) Noise Figure NF = f ( f ) 0 9 5 8.5 S 11 8 S 11, S 22 [db] 15 20 25 S 22 NF [db] 7.5 7 6.5 30 6 35 5.5 40 1.93 1.94 1.95 1.96 1.97 1.98 1.99 5 1.93 1.94 1.95 1.96 1.97 1.98 1.99 Data Sheet 24 Revision 1.1, 2011-03-16
Input Compression P 1dB = f ( f ) 2 3 P1dB [dbm] 4 5 6 7 8 1.93 1.94 1.95 1.96 1.97 1.98 1.99 Data Sheet 25 Revision 1.1, 2011-03-16
2.18 Measured Performance Mid Band Low Gain Mode vs. Temperature V CC = 2.8 V, V GS = 0 V, V EN1 = 2.8 V, V EN2 = 0 V Noise Figure NF = f ( ) Input Compression P 1dB = f ( ) NF [db] 10 9.5 9 8.5 8 7.5 7 6.5 6 5.5 5 P1dB [dbm] 0 1 2 3 4 5 6 7 8 9 Data Sheet 26 Revision 1.1, 2011-03-16
2.19 Measured Performance High Band High Gain Mode vs. Frequency = 25 C, V CC = 2.8 V, V GS = 2.8 V, V EN1 = 2.8 V, V EN2 = 2.8 V Power Gain S 21 = f ( f ) Power Gain Wideband S 21 = f ( f ) 18 20 17.5 17 30 C 10 Power Gain [db] 16.5 16 15.5 15 14.5 25 C 85 C Power Gain [db] 0 20 14 13.5 30 13 2.11 2.12 2.13 2.14 2.15 2.16 2.17 40 0 2 4 6 8 Matching S 11 = f ( f ), S 22 = f ( f ) Gainstep HG - LG ΔS 21 = f ( f ) S 11, S 22 [db] 0 5 15 20 25 30 35 S 11 S 22 40 2.11 2.12 2.13 2.14 2.15 2.16 2.17 Delta Gain [db] 28 27.5 27 26.5 26 25.5 25 24.5 24 23.5 23 22.5 30 C 25 C 85 C 22 2.11 2.12 2.13 2.14 2.15 2.16 2.17 Data Sheet 27 Revision 1.1, 2011-03-16
Noise Figure NF = f ( f ) Input Compression P 1dB = f ( f ) NF [db] 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 2.11 2.12 2.13 2.14 2.15 2.16 2.17 P1dB [dbm] 8 9 11 12 13 14 2.11 2.12 2.13 2.14 2.15 2.16 2.17 Data Sheet 28 Revision 1.1, 2011-03-16
2.20 Measured Performance High Band High Gain Mode vs. Temperature V CC = 2.8 V, V GS = 2.8 V, V EN1 = 2.8 V, V EN2 = 2.8 V Power Gain S 21 = f ( ) Supply Current I CC = f ( ) Power Gain [db] 19 18 17 16 15 14 13 I CC [ma] 4 3.9 3.8 3.7 3.6 3.5 3.4 3.3 3.2 3.1 3 Noise Figure NF = f ( ) Input Compression P 1dB = f ( ) 1.8 4 NF [db] 1.6 1.4 1.2 1 0.8 0.6 P1dB [dbm] 6 8 12 14 0.4 16 Data Sheet 29 Revision 1.1, 2011-03-16
2.21 Measured Performance High Band Low Gain Mode vs. Frequency = 25 C, V CC = 2.8 V, V GS = 0 V, V EN1 = 2.8 V, V EN2 = 2.8 V Power Gain S 21 = f ( f ) Power Gain Wideband S 21 = f ( f ) 5 0 Power Gain [db] 5.5 6 6.5 7 7.5 8 8.5 30 C 25 C 85 C Power Gain [db] 20 30 40 50 9 2.11 2.12 2.13 2.14 2.15 2.16 2.17 60 0 2 4 6 8 Matching S 11 = f ( f ), S 22 = f ( f ) Noise Figure NF = f ( f ) 0 9 5 8.5 S 22 8 S 11, S 22 [db] 15 20 25 S 11 NF [db] 7.5 7 6.5 30 6 35 5.5 40 2.11 2.12 2.13 2.14 2.15 2.16 2.17 5 2.11 2.12 2.13 2.14 2.15 2.16 2.17 Data Sheet 30 Revision 1.1, 2011-03-16
Input Compression P 1dB = f ( f ) 2 3 P1dB [dbm] 4 5 6 7 8 2.11 2.12 2.13 2.14 2.15 2.16 2.17 Data Sheet 31 Revision 1.1, 2011-03-16
2.22 Measured Performance High Band Low Gain Mode vs. Temperature V CC = 2.8 V, V GS = 0 V, V EN1 = 2.8 V, V EN2 = 2.8 V Power Gain S 21 = f ( ) Supply Current I CC = f ( ) Power Gain [db] 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 I CC [ma] 0.8 0.75 0.7 0.65 0.6 0.55 0.5 Noise Figure NF = f ( ) Input Compression P 1dB = f ( ) NF [db] 10 9.5 9 8.5 8 7.5 7 6.5 6 5.5 5 P1dB [dbm] 0 1 2 3 4 5 6 7 8 9 Data Sheet 32 Revision 1.1, 2011-03-16
Application Circuit and Block Diagram 3 Application Circuit and Block Diagram 3.1 UMTS Bands 1, 2 and 5 Application Circuit Schematic V CC= 2.8 V C7 10nF V GS= 0 / 2.8 V 0 GND 5 n/c 4 RFGNDH 3 VCC 2 VGS n/c 1 RFIN 1900 MHz RFIN 2100 MHz C1 10pF C2 22pF C3 10pF C4 22pF 6 L1 RFINM 3.9nH L1 3.9nH L2 2.7nH 7 RFINH 16 RFOUTM 15 RFOUTH RFOUT 1900 MHz RFOUT 2100 MHz 8 RFGNDM Biasing & Logic Circuitry 14 RFOUTL RFOUT 800 MHz 9 n/c 10 RFINL 11 VEN2 12 VEN1 n/c 13 RFIN 800 MHz C5 3.0pF C6 22pF L3 9.1nH V EN= 0 / 2.8 V V EN= 0 / 2.8 V BGA734L16_Appl.vsd Figure 2 Application Circuit with Chip Outline (Top View) Note: Package paddle (Pin 0) has to be RF grounded. Table 11 Bill of Materials Part Number Part Type Manufacturer Size Comment L1... L3 Chip inductor Various 0402 Wirewound, Q 50 C1... C7 Chip capacitor Various 0402 Data Sheet 33 Revision 1.1, 2011-03-16
Application Circuit and Block Diagram 3.2 Pin Description Table 12 Pin Definition and Function Pin No. Name Function 0 GND Ground connection for low band (800 MHz) LNA and control circuity (package paddle) 1 n/c Not connected 2 VGS Gain step control 3 VCC Supply voltage 4 RFGNDH High band (2100 MHz) LNA emitter ground 5 n/c Not connected 6 RFINM Mid band (1900 MHz) LNA input 7 RFINH High band (2100 MHz) LNA input 8 RFGNDM Mid band (1900 MHz) LNA emitter ground 9 n/c Not connected 10 RFINL Low band (800 MHz) LNA input 11 VEN2 Band select control 12 VEN1 Band select control 13 n/c Not connected 14 RFOUTL Low band (800 MHz) LNA output 15 RFOUTH High band (2100 MHz) LNA output 16 RFOUTM Mid band (1900 MHz) LNA output Data Sheet 34 Revision 1.1, 2011-03-16
Application Circuit and Block Diagram 3.3 Application Board BGA734L16_App_Board.vsd Figure 3 Top layer (top view) Middle layer (top view) Bottom layer (top view) Application Board Layout on 3-layer FR4. Note: Top layer thickness: 0.2 mm, bottom layer thickness: 0.8 mm, 17 μm Cu metallization, gold plated. Board size: 21 x 50 mm Copper 17µm Vias Vias Prepreg FR4, 0.2mm FR4, 0.8mm BGA734L16_Cross_Section_View.vsd Figure 4 Cross-Section View of Application Board Data Sheet 35 Revision 1.1, 2011-03-16
Application Circuit and Block Diagram 5 4 3 RFINM 2 1 6 16 RFOUTM RFINH 7 15 RFOUTH 8 14 RFOUTL 9 10 11 12 13 RFINL EN2 EN1 RFGNDH VCC GS GND RFGNDM Figure 5 Detail of Application Board Layout BGA734L16_App_Board_detail.vsd Note: In order to achieve the same performance as given in this datasheet please follow the suggested PCB-layout as closely as possible. The position of the GND vias is critical for RF performance. Data Sheet 36 Revision 1.1, 2011-03-16
Physical Characteristics 4 Physical Characteristics 4.1 Package Footprint NSMD 0.075 0.225 0.225 0.275 2.3 1.25 2.3 0.55 1.25 0.3 0.2 0.3 0.2 0.3 0.2 0.3 0.3 0.2 Copper Solder mask 0.3 0.2 0.3 0.2 0.3 0.2 0.3 0.3 0.2 Stencil apertures SMD - V1 0.35 0.55 0.225 SMD - V2 (e.g. BGA734L16) 0.35 0.55 0.225 0.15 0.15 2.3 1.25 2.3 1.25 0.3 0.2 0.3 0.2 0.3 0.2 0.3 0.3 0.2 Copper Solder mask Vias top to first inner layer 0.3 0.2 0.3 0.2 0.3 0.2 0.3 0.3 0.2 TSLP-16-1-FP V01 Figure 6 Recommended Footprint and Stencil Layout for the TSLP-16-1 Package Data Sheet 37 Revision 1.1, 2011-03-16
Physical Characteristics 4.2 Package Dimensions Top view Bottom view 0.05 MAX. 0.39 +0.01-0.03 2.3 ±0.05 2 ±0.05 1±0.05 9 10 11 12 13 2 ±0.05 1.4 ±0.035 1±0.05 8 7 6 1) 1.4 ±0.035 14 15 16 0.05x45 16x0.2±0.035 2.3 ±0.05 Pin 1 marking 1) Dimension applies to plated terminals 5 4 3 2 16x0.2±0.035 1 TSLP-16-1-PO V02 Figure 7 Package Outline (Top, Side and Bottom View) Data Sheet 38 Revision 1.1, 2011-03-16
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