PD5515 PD5515S RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION P OUT = 15 W with 14 db gain @ / 12.5 V NEW RF PLASTIC PACKAGE DESCRIPTION The PD5515 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD5515 boasts the excellent gain, linearity and reliability of ST s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-RF. PD5515 s superior linearity performance makes it an ideal solution for car mobile radio. PowerSO-RF (formed lead) ORDER CODE PD5515 BRANDING PD5515 The PowerSO- plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. ORDER CODE PD5515S PowerSO-RF (straight lead) BRANDING PD5515S Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294) ABSOLUTE MAXIMUM RATINGS (T CASE = 25 C) Symbol Parameter Value Unit V (BR)DSS Drain-Source Voltage 4 V V GS Gate-Source Voltage ± 2 V I D Drain Current 5 A P DISS Power Dissipation (@ Tc = 7 C) 73 W Tj Max. Operating Junction Temperature 165 C T STG Storage Temperature -65 to +15 C THERMAL DATA R th(j-c) Junction -Case Thermal Resistance 1.2 C/W April, 17 23 1/18
ELECTRICAL SPECIFICATION (T CASE = 25 C) STATIC Symbol Test Conditions Min. Typ. Max. Unit I DSS V GS = V V DS = 28 V 1 µa I GSS V GS = 2 V V DS = V 1 µa V GS(Q) V DS = V I D = 15 ma 2. 5. V V DS(ON) V GS = V I D = 2.5 A.8 V g FS V DS = V I D = 2.5 A 2. 2.5 mho C ISS V GS = V V DS = 12.5 V f = 1 MHz 89 pf C OSS V GS = V V DS = 12.5 V f = 1 MHz 6 pf C RSS V GS = V V DS = 12.5 V f = 1 MHz 6.5 pf DYNAMIC Symbol Test Conditions Min. Typ. Max. Unit P 1dB V DD = 12.5 V I DQ = 15 ma f = 15 W G P V DD = 12.5 V I DQ = 15 ma P OUT = 15 W f = 12 14 db η D V DD = 12.5 V I DQ = 15 ma P OUT = 15 W f = 5 55 % Load V DD = 15.5 V I DQ = 15 ma mismatch ALL PHASE ANGLES P OUT = 15 W f = 2:1 VSWR PIN CONNECTION SOURCE D Z DL GATE DRAIN Typical Input Impedance Typical Drain Load Impedance G Zin S SC152 SC1314 IMPEDANCE DATA PD5515 PD5515S FREQ. MHz Z IN (Ω) Z DL (Ω) FREQ. MHz Z IN (Ω) Z DL (Ω) 48 1.58 + j.56 1.27 - j 1.36 48 1.3 - j.54 1.18 + j.4 5 1.53 + j.77 1.51 - j 1.81 5 1.26 - j.3 1.32 - j.22 52 1.7 + j 1.17 1.44 - j 2.13 52 1.34 - j.11 1.46 - j.22 876.33 + j.44 1.36 - j.21 9.33 + j.7 1.29 - j 1.3 915.33 + j.87 1.27 - j.37 2/18
TYPICAL PERFORMANCE Capacitance vs. Drain Voltage Drain Current vs. Gate Voltage PD5515 - PD5515S C (pf) 4 Ciss Coss Crss f=1 MHz 1 5 15 2 25 3 VDS (V) Id, DRAIN CURRENT (A) 3.5 3 2.5 2 1.5 1 VDS = V.5 2.5 3 3.5 4 4.5 5 Vgs, GATE-SOURCE VOLTAGE (V) Gate-Source Voltage vs. Case Temperature VGS, GATE-SOURCE VOLTAGE (NORMALIZED) 1.4 1.2 ID = 3A ID 1 = 2A ID = 1.5 A ID = 1A.98 VDS = V ID =.25 A.96-25 25 5 75 Tc, CASE TEMPERATURE ( C) 3/18
TYPICAL PERFORMANCE Output Power vs. Input Power PD5515 Power Gain vs. Output Power 18 16 14 12 8 6 4 VDD = 12..5 V 2 IDQ = 15 ma.2.4.6.8 1 Pin, INPUT POWER (W) Gp, POWER GAIN (db) 18 16 14 12 Idq = 15 ma 2 4 6 8 12 14 16 18 Drain Efficiency vs. Output Power Return Loss vs. Output Power 6 Nd, DRAIN EFFICIENCY (%) 5 4 3 2 Idq = 15 ma 2 4 6 8 12 14 16 18 Rtl, RETURN LOSS (db) - -2-3 Idq = 15 ma -4 2 4 6 8 12 14 16 18 Output Power vs. Bias Current Drain Efficiency vs. Bias Current 22 7 2 18 16 14 Pin =.7 W Nd, DRAIN EFFICIENCY (%) 6 5 4 Pin =.7 W 12 2 4 6 8 Idq, BIAS CURRENT (ma) 3 2 4 6 8 Idq, BIAS CURRENT (ma) 4/18
TYPICAL PERFORMANCE Output Power vs. Drain Voltage Drain Efficiency vs. Drain Voltage PD5515 - PD5515S 25 7 2 15 5 Idq = 15mA Pin =.7 W Nd, DRAIN EFFICIENCY (%) 6 5 4 IDQ = 15mA Pin =.7 W 7 8 9 11 12 13 14 15 16 17 VDS, DRAIN-SOURCE VOLTAGE (V) 3 7 8 9 11 12 13 14 15 16 17 VDS, DRAIN-SOURCE VOLTAGE (V) Output Power vs. Gate Bias Voltage Output Power vs. Input Power PD5515S 2 18 15 5 VDD = 12.5 V Pin =.7 W 16 14 12 8 6 4 2 VDD = 12..5 V IDQ = 15 ma.5 1 1.5 2 2.5 3 3.5 VGS, GATE BIAS VOLTAGE (V).1.2.3.4.5.6.7 Pin, INPUT POWER (W) Power Gain vs. Output Power Drain Efficiency vs. Output Power 18 6 Gp, POWER GAIN (db) 16 14 12 Idq = 15 ma 2 4 6 8 12 14 16 18 Nd, DRAIN EFFICIENCY (%) 5 4 3 2 Idq = 15 ma 2 4 6 8 12 14 16 18 5/18
TYPICAL PERFORMANCE Return Loss vs. Output Power Output Power vs. Bias Current 22 Rtl, RETURN LOSS (db) - -2-3 Idq = 15 ma 2 18 16 14 Pin =.5 W -4 2 4 6 8 12 14 16 18 12 2 4 6 8 Idq, BIAS CURRENT (ma) Drain Efficiency vs. Bias Current Output Power vs. Drain Voltage 7 25 Nd, DRAIN EFFICIENCY (%) 6 5 4 Pin =.5 W 3 2 4 6 8 Idq, BIAS CURRENT (ma) 2 15 5 Idq = 15mA Pin =.5 W 7 8 9 11 12 13 14 15 16 17 VDS, DRAIN-SOURCE VOLTAGE (V) Drain Efficiency vs. Drain Voltage Output Power vs. Gate Bias Voltage 7 2 Nd, DRAIN EFFICIENCY (%) 6 5 4 Idq = 15mA Pin =.5 W 15 5 VDD = 12.5 V Pin =.5 W 3 7 8 9 11 12 13 14 15 16 17 VDS, DRAIN-SOURCE VOLTAGE (V).5 1 1.5 2 2.5 3 3.5 VGS, GATE BIAS VOLTAGE (V) 6/18
TYPICAL PERFORMANCE (876-915MHz) Power Gain vs. Output Power PD5515S Drain Efficiency vs Output Power PD5515 - PD5515S Gp (db) 16 Nd (%) 7 15 6 915 MHz 9 MHz 14 5 876 MHz 13 876 MHz 4 12 915 MHz 9 MHz 3 11 5 15 2 Pout (W) Vdd = 12.5V Idq = 15mA 2 5 15 2 Pout (W) Vdd = 12.5V Idq = 15mA Input Return Loss vs Output Power Rl (db) - 9 MHz 915 MHz 876 MHz -2-3 Vdd = 12.5V Idq = 15mA 5 15 2 Pout (W) 7/18
TEST CIRCUIT SCHEMATIC TEST CIRCUIT COMPONENT PART LIST COMPONENT DESCRIPTION B1,B2 FERRITE BEAD - Fair-rite Corp #274321447 C1,C12 3 pf, mil CHIP CAPACITOR C2,C3,C4,C11,C12,C13 1 to 2 pf TRIMMER CAPACITOR C6, C18 12 pf mil CHIP CAPACITOR C9, C15 µf, 5 V ELECTROLYTIC CAPACITOR C8, C16.1 mf, mil CHIP CAP C7, C17 1. pf mil CHIP CAP C5, C 33 pf, mil CHIP CAP L1 56 nh, 6 TURNS, 18 AWG MAGNET WIRE, Id =.14" HAND WOUND CHOKE N1, N2 TYPE N FLANGE MOUNT R1 15 Ω, 1 W CHIP RESISTOR R2 1 KΩ, 1 W CHIP RESISTOR R3 33 KΩ, 1 W CHIP RESISTOR Z1.471 X.8 MICROSTRIP Z2 1.82 X.8 MICROSTRIP Z3.372 X.8 MICROSTRIP Z4,Z5.26 X.223 MICROSTRIP Z6.5 X.8 MICROSTRIP Z7.551 X.8 MICROSTRIP Z8.825 X.8 MICROSTRIP Z9.489 X.8 MICROSTRIP BOARD ROGER, ULTRA LAM 2 THK.3, εr = 2.55 2oz. ED cu 2 SIDES. 8/18
TEST CIRCUIT TEST CIRCUIT PHOTOMASTER 4 inches 6.4 inches 9/18
COMMON SOURCE S-PARAMETER (PD5515S) (V DS = 12.5V I DS = 225mA) FREQ IS 11I S 11 Φ IS 21I S 21 Φ IS 12I S 12 Φ IS 22I S 22 Φ (MHz) 5.769-161 12.12 85.27-3.73-16.82-167 5.77 74.26-14.746-166 15.847-17 3.75 66.25-21.769-167 2.869-172 2.66 59.23-29.798-168 25.884-172 2. 51.22-34.851-168 3.9-173 1.56 45.19-39.849-169 35.914-174 1.25 4.18-43.872-171 4.925-175 1.2 35.16-47.89-171 45.936-176.84 31.14-5.95-172 5.944-176.71 28.13-51.919-173 55.95-177.61 24.11-53.927-174 6.955-178.52 22. -56.94-175 65.96-179.46 19.8-55.941-176 7.963-179.4 17.7-58.95-177 75.965-18.35 14.7-57.952-177 8.97 18.32 13.5-52.959-178 85.97 179.29 11.5-55.956-178 9.973 179.26 9.4-45.965-179 95.974 178.23 8.3-31.964-18.976 178.21 6.3-3.965 18 5.978 177.2 5.2-27.967 179 1.977 177.18 3.1-13.97 179 115.979 176.17 3.2 18.971 179 12.979 176.16 1.2 42.966 179 125.979 176.15.2 64.984 179 13.979 175.14-2.3 75.991 176 135.98 175.13-3.3 93.974 177 14.979 175.12-3.4 9.975 176 145.976 174.11-4.4 2.972 176 15.978 174. -4.6 112.976 175 /18
COMMON SOURCE S-PARAMETER (PD5515S) (V DS = 12.5V I DS = 1.2A) FREQ IS 11 I S 11 Φ IS 21 I S 21 Φ IS 12 I S 12 Φ IS 22 I S 22 Φ (MHz) 5.826-17 13.8 85.15.821-171.872-173 6.68 79.14-6.824-174 15.893-175 4.49 74.14-11.828-175 2.95-176 3.3 7.14-15.838-176 25.97-177 2.59 64.13-17.843-176 3.914-178 2.11 6.12-2.856-176 35.92-178 1.74 55.12-22.867-176 4.925-178 1.47 51.11-25.876-176 45.931-179 1.26 46. -28.884-177 5.937-179 1.9 43.9-3.895-177 55.94-18.95 39.8-29.94-177 6.945-18.84 36.7-31.915-177 65.949 18.75 33.7-26.915-178 7.953 179.67 31.6-27.926-178 75.955 179.6 28.5-25.929-179 8.959 178.54 26.5-2.936-179 85.961 178.49 24.4-14.934-18 9.962 178.45 22.4-4.944 18 95.964 177.42 2.4 1.943 18.967 177.38 18.4 6.945 179 5.968 176.35 16.3 16.948 179 1.965 176.33 14.3 4.952 178 115.97 176.31 13.3 36.955 179 12.971 175.29 11.3 59.954 179 125.971 175.27 9.4 6.971 178 13.97 175.25 7.4 63.975 176 135.972 174.24 5.4 67.959 176 14.971 174.22 4.5 76.96 176 145.97 174.2 3.5 88.961 175 15.97 174.19 2.6 3.963 175 11/18
COMMON SOURCE S-PARAMETER (PD5515S) (V DS = 12.5V I DS = 2.25A) FREQ IS 11 I S 11 Φ IS 21 I S 21 Φ IS 12 I S 12 Φ IS 22 I S 22 Φ (MHz) 5.838-171 13.85 85.13.837-173.882-174 6.71 8.12-7.839-175 15.93-176 4.53 76.12-7.841-176 2.914-177 3.35 72.12-11.849-176 25.915-178 2.64 66.12-13.853-177 3.92-178 2.16 62.11-17.861-177 35.925-179 1.79 57. -17.871-177 4.929-179 1.53 53. -21.877-177 45.934-179 1.31 49.9-22.887-177 5.937-18 1.14 46.8-23.894-177 55.94 18 1. 42.8-22.93-178 6.947 18.89 39.7-2.913-178 65.95 179.79 36.6-19.913-178 7.951 179.71 34.6-19.921-179 75.954 179.64 31.5-15.927-179 8.958 178.58 29.5-8.932-179 85.959 178.53 26.4-3.93 18 9.962 177.48 24.4.94 179 95.964 177.45 22.4 7.941 179.966 177.41 2.4 16.939 179 5.967 176.38 18.4 23.946 178 1.965 176.36 17.3 4.95 178 115.967 176.33 15.3 41.952 179 12.97 175.32 13.4 58.95 178 125.971 175.3 11.4 59.966 178 13.693 175.27 8.4 57.973 176 135.972 174.26 7.5 68.957 176 14.971 174.24 6.5 76.958 176 145.969 174.22 5.5 88.957 175 15.969 173.21 4.7 99.961 175 12/18
COMMON SOURCE S-PARAMETER (PD5515) (V DS = 12.5V I DS = 225mA) FREQ IS 11I S 11 Φ IS 21I S 21 Φ IS 12I S 12 Φ IS 22I S 22 Φ (MHz) 5.783-164.63 89.27-2.762-164.831-17 5.23 77.27-12.775-17 15.857-173 3.36 68.26-18.784-171 2.873-174 2.4 6.24-24.8-172 25.886-175 1.82 54.22-3.827-172 3.899-176 1.43 47.2-34.852-173 35.99-177 1.15 42.18-37.87-174 4.921-178.95 37.16-41.882-175 45.928-179.8 33.15-44.896-175 5.937-18.67 28.13-45.911-177 55.943 179.58 25.11-45.92-177 6.947 178.5 22. -48.929-178 65.954 177.44 19.8-45.935-179 7.956 177.39 16.8-45.941 18 75.959 176.34 14.6-42.945 179 8.96 175.31 11.5-35.947 18 85.964 174.28 9.5-26.954 177 9.965 173.25 7.4-7.955 177 95.968 173.23 6.3-6.958 176.969 172.21 4.3 16.959 175 5.968 171.19 2.3 27.965 175 1.969 171.18 1.4 42.963 174 115.968 17.16.4 52.961 174 12.97 169.15-2.5 61.962 173 125.969 169.14-3.6 65.965 172 13.969 168.13-5.6 67.969 172 135.968 167.12-6.7 69.963 171 14.967 167.11-7.7 76.964 17 145.966 166.11-8.9 78.962 17 15.962 166. -8.9 91.961 169 13/18
COMMON SOURCE S-PARAMETER (PD5515) (V DS = 12.5V I DS = 1.2A) FREQ IS 11 I S 11 Φ IS 21 I S 21 Φ IS 12 I S 12 Φ IS 22 I S 22 Φ (MHz) 5.837-171 11.65 85.15.845-173.882-174 5.65 79.14-6.848-176 15.94-177 3.81 75.14-7.848-177 2.913-178 2.82 71.14 -.858-178 25.915-179 2.22 66.14-12.859-178 3.919-173 1.82 61.12-13.869-179 35.924 179 1.52 56.12-16.875-179 4.928 179 1.3 52.11-17.88-179 45.931 178 1.11 48.11-17.89-18 5.934 178.97 44. -16.897 18 55.938 177.86 4.9-15.92 179 6.943 176.75 37.8-15.911 179 65.945 176.68 34.7 -.916 178 7.948 175.61 31.7-5.919 178 75.95 174.55 28.6.924 177 8.953 174.5 26.6 6.925 177 85.954 173.46 23.6 12.932 176 9.954 172.42 21.6 22.937 176 95.959 172.39 19.6 26.939 175.959 171.36 17.6 36.938 174 5.959 17.33 14.7 36.947 174 1.96 17.31 12.6 43.948 173 115.96 169.29 11.6 48.946 173 12.962 169.27 9.7 53.947 172 125.961 168.25 6.8 59.95 172 13.961 167.24 4.9 63.954 171 135.961 167.22 2.9 62.949 17 14.959 166.21 1.9 67.952 17 145.959 166.19-1. 72.949 169 15.955 165.18-1. 8.947 169 14/18
COMMON SOURCE S-PARAMETER (PD5515) (V DS = 12.5V I DS = 2.25A) FREQ IS 11 I S 11 Φ IS 21 I S 21 Φ IS 12 I S 12 Φ IS 22 I S 22 Φ (MHz) 5.845-172 11.69 85.13.858-174.891-175 5.68 8.12-3.862-177 15.913-177 3.84 76.12-4.86-178 2.923-179 2.85 73.12-6.866-179 25.924-18 2.25 67.12-8.87-179 3.927 18 1.86 63.11-9.876-179 35.93 179 1.55 59.11 -.879-18 4.933 178 1.33 55. -.885-18 45.935 178 1.15 5. -.892 18 5.938 177 1.1 47.9-9.898 179 55.94 176.89 43.8-8.94 179 6.945 176.79 4.8-5.912 178 65.948 175.71 37.73-3.915 178 7.95 174.64 34.7 3.917 177 75.951 174.58 31.6 9.923 177 8.953 173.53 29.6 11.925 176 85.954 173.48 26.6 18.931 176 9.954 172.45 23.6 24.934 175 95.957 171.41 21.7 25.936 174.959 171.38 19.7 36.939 174 5.959 17.36 17.7 43.942 174 1.96 17.33 15.7 47.943 173 115.959 169.31 12.7 52.943 173 12.961 168.29 11.7 53.943 172 125.96 168.27 8.8 59.949 171 13.961 167.26 6.9 6.95 171 135.96 167.24 4.9 61.947 17 14.592 166.22 2.9 64.945 17 145.584 166.21 1. 71.947 169 15.954 165.19. 82.945 168 15/18
PowerSO-RF Formed Lead (Gull Wing) MECHANICAL DATA DIM. mm Inch MIN. TYP. MAX MIN. TYP. MAX A1.5.1..19.38 A2 3.4 3.5 3.6.134.137.142 A3 1.2 1.3 1.4.46.5.54 A4.15.2.25.5.7.9 a.2.7 b 5.4 5.53 5.65.212.217.221 c.23.27.32.8.1.12 D 9.4 9.5 9.6.37.374.377 D1 7.4 7.5 7.6.29.295.298 E 13.85 14.1 14.35.544.555.565 E1 9.3 9.4 9.5.365.37.375 E2 7.3 7.4 7.5.286.292.294 E3 5.9 6.1 6.3.231.24.247 F.5.19 G 1.2.47 L.8 1 1.1.3.39.42 R1.25.1 R2.8.31 T 2 deg 5 deg 8 deg 2 deg 5 deg 8 deg T1 6 deg 6 deg T2 deg deg Note (1): Resin protrusions not included (max value:.15 mm per side) CRITICAL DIMENSIONS: - Stand-off (A1) - Overall width (L) 16/18
PowerSO-RF Straight Lead MECHANICAL DATA DIM. mm Inch MIN. TYP. MAX MIN. TYP. MAX A1 1.62 1.67 1.72.64.65.68 A2 3.4 3.5 3.6.134.137.142 A3 1.2 1.3 1.4.46.5.54 A4.15.2.25.5.7.9 a.2.7 b 5.4 5.53 5.65.212.217.221 c.23.27.32.8.1.12 D 9.4 9.5 9.6.37.374.377 D1 7.4 7.5 7.6.29.295.298 E 15.15 15.4 15.65.595.66.615 E1 9.3 9.4 9.5.365.37.375 E2 7.3 7.4 7.5.286.292.294 E3 5.9 6.1 6.3.231.24.247 F.5.19 G 1.2.47 R1.25.1 R2.8.31 T1 6 deg 6 deg T2 deg deg Note (1): Resin protrusions not included (max value:.15 mm per side) CRITICAL DIMENSIONS: - Overall width (L) 17/18
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