PD-96958B RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 2N7582T IRHMS6764 5V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHMS6764 K Rads (Si).9Ω 45A* IRHMS6364 3K Rads (Si).9Ω 45A* International Rectifier s R6 TM technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 9MeV/(mg/cm 2 ). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today s high speed switching applications such as DC-DC converters and motor controllers. These devices retain all of the well established advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters. Features: n Low RDS(on) n Fast Switching Low-Ohmic TO-254AA n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 2V, TC = 25 C Continuous Drain Current 45* ID @ VGS = 2V, TC = C Continuous Drain Current 44 IDM Pulsed Drain Current À 8 PD @ TC = 25 C Max. Power Dissipation 28 W Units Linear Derating Factor.67 W/ C VGS Gate-to-Source Voltage ±2 V EAS Single Pulse Avalanche Energy Á 353 mj IAR Avalanche Current À 45 A EAR Repetitive Avalanche Energy À 2.8 mj dv/dt Peak Diode Recovery dv/dt  8.2 V/ns TJ Operating Junction -55 to 5 TSTG Storage Temperature Range Lead Temperature 3 (.63 in. /.6 mm from case for s) C Weight 9.3 (Typical) g * Current is limited by package For footnotes refer to the last page www.irf.com A //4
IRHMS6764, 2N7582T Electrical Characteristics @ Tj = 25 C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 5 V VGS = V, ID =.ma BVDSS/ TJ Temperature Coefficient of Breakdown.8 V/ C Reference to 25 C, ID =.ma Voltage RDS(on) Static Drain-to-Source On-State.9 Ω VGS = 2V, ID = 44A Ã Resistance VGS(th) Gate Threshold Voltage 2. 4. V VDS = VGS, ID =.ma VGS(th)/ TJ Gate Threshold Voltage Coefficient -.92 mv/ C gfs Forward Transconductance 49 S VDS = 5V, IDS = 44A Ã IDSS Zero Gate Voltage Drain Current VDS= 2V, VGS = V 25 µa VDS = 2V, VGS = V, TJ = 25 C IGSS Gate-to-Source Leakage Forward na VGS = 2V IGSS Gate-to-Source Leakage Reverse - VGS = -2V Qg Total Gate Charge 23 VGS = 2V, ID = 45A Qgs Gate-to-Source Charge 55 nc VDS = 75V Qgd Gate-to-Drain ( Miller ) Charge 9 td(on) Turn-On Delay Time 35 VDD = 75V, ID = 45A, tr Rise Time 2 VGS = 2V, RG = 2.35Ω ns td(off) Turn-Off Delay Time 85 tf Fall Time 25 LS + LD Total Inductance 6.8 nh Measured from Drain lead ( 6mm /.25 in from package ) to Source lead ( 6mm/.25 in from package ) Ciss Input Capacitance 738 VGS = V, VDS = 25V Coss Output Capacitance 4 pf f =.MHz Crss Reverse Transfer Capacitance 28 Rg Gate Resistance.52 Ω f =.MHz, open drain Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) 45* ISM Pulse Source Current (Body Diode) À 8 A VSD Diode Forward Voltage.2 V Tj = 25 C, IS = 45A, VGS = V Ã trr Reverse Recovery Time 37 ns Tj = 25 C, IF = 45A, di/dt A/µs QRR Reverse Recovery Charge 3.8 µc VDD 25V Ã ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter Min Typ Max Units Test Conditions RthJC Junction-to-Case.6 RthCS Case-to-Sink.2 C/W RthJA Junction-to-Ambient 48 Typical socket mount Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page 2 www.irf.com
Radiation Characteristics IRHMS6764, 2N7582T International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table. Electrical Characteristics @ Tj = 25 C, Post Total Dose Irradiation ÄÅ Parameter Up to 3K Rads (Si) Units Test Conditions Min Max BV DSS Drain-to-Source Breakdown Voltage 5 V V GS = V, I D =.ma VGS(th) Gate Threshold Voltage 2. 4. VGS = V DS, I D =.ma I GSS Gate-to-Source Leakage Forward na V GS = 2V I GSS Gate-to-Source Leakage Reverse - V GS = -2V I DSS Zero Gate Voltage Drain Current µa V DS = 2V, V GS = V R DS(on) Static Drain-to-Source On-State Resistance (TO-3).9 Ω VGS = 2V, I D = 44A R DS(on) Static Drain-to-Sourcee On-State Resistance (Low Ohmic TO-254AA).9 Ω VGS = 2V, I D = 44A V SD Diode Forward Voltage.2 V VGS = V, I D = 45A. Part numbers IRHMS6764 and IRHMS6364 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Typical Single Event Effect Safe Operating Area LET Energy Range VDS (V) (MeV/(mg/cm 2 )) (MeV) (µm) @VGS= @VGS= @VGS= @VGS= @VGS= V -5V -V -5V -2V 39 ± 5% 4 ± 5% 5 ± 5% 5 5 5 5 5 6 ± 5% 825 ± 5% 66 ± 7.5% 5 5 5 4-9 ± 5% 47 ± 5% 8 ± 5% 5 5 3 - - Bias VDS (V) 75 5 25 75 5 25-5 - Bias VGS (V) -5-2 LET=39 ± 5% LET=6 ± 5% LET=9 ± 5% For footnotes refer to the last page Fig a. Single Event Effect, Safe Operating Area www.irf.com 3
R DS(on), Drain-to-Source On Resistance (Normalized) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) IRHMS6764, 2N7582T VGS TOP 5V 2V V 9.V 8.V 7.V 6.V BOTTOM 5.V VGS TOP 5V 2V V 9.V 8.V 7.V 6.V BOTTOM 5.V 5.V 5.V 6µs PULSE WIDTH Tj = 25 C. V DS, Drain-to-Source Voltage (V) 6µs PULSE WIDTH Tj = 5 C. V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics 3. I D = 45A I D, Drain-to-Source Current (A) T J = 5 C T J = 25 C V DS = 5V 6µs PULSE 5 WIDTH 5 5.5 6 6.5 7 7.5 8 2.5 2..5..5 V GS = 2V. -6-4 -2 2 4 6 8 2 4 6 V GS, Gate-to-Source Voltage (V) T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com
V (BR)DSS, Drain-to-Source Breakdown Voltage (V) V GS(th) Gate threshold Voltage (V) R DS(on), Drain-to -Source On Resistance (m Ω) R DS (on), Drain-to -Source On Resistance (m Ω) IRHMS6764, 2N7582T 6 5 55 5 45 I D = 45A 4 4 35 3 T J = 5 C 3 25 2 5 5 T J = 5 C T J = 25 C 2 T J = 25 C V GS = 2V 4 8 2 6 2 2 4 6 8 2 4 6 8 2 V GS, Gate -to -Source Voltage (V) I D, Drain Current (A) Fig 5. Typical On-Resistance Vs Gate Voltage Fig 6. Typical On-Resistance Vs Drain Current 2 2 I D =.ma 6. 5.5 5. 9 4.5 4. 8 3.5 7 6 3. 2.5 2..5 I D = 5µA I D = 25µA I D =.ma I D = 5mA 5-6 -4-2 2 4 6 8 2 4 6 T J, Temperature ( C ). -6-4 -2 2 4 6 8 2 4 6 T J, Temperature ( C ) Fig 7. Typical Drain-to-Source Breakdown Voltage Vs Temperature Fig 8. Typical Threshold Voltage Vs Temperature www.irf.com 5
C, Capacitance (pf) I SD, Reverse Drain Current (A) V GS, Gate-to-Source Voltage (V) IRHMS6764, 2N7582T 4 2 V GS = V, f = MHz C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 2 6 I D = 45A V DS = 2V V DS = 75V V DS = 3V 8 C iss 2 6 C oss 8 4 2 C rss 4 FOR TEST CIRCUIT SEE FIGURE 7 4 8 2 6 2 24 28 V DS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nc) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig. Typical Gate Charge Vs. Gate-to-Source Voltage 7 6 LIMITED BY PACKAGE T J = 5 C T J = 25 C I D, Drain Current (A) 5 4 3 2 V GS = V...5..5 2. 2.5 3. V SD, Source-to-Drain Voltage (V) 25 5 75 25 5 T C, Case Temperature ( C) Fig. Typical Source-Drain Diode Forward Voltage Fig 2. Maximum Drain Current Vs. Case Temperature 6 www.irf.com
I D, Drain-to-Source Current (A) E AS, Single Pulse Avalanche Energy (mj) IRHMS6764, 2N7582T OPERATION IN THIS AREA LIMITED BY R DS (on) 7 6 5 TOP BOTTOM I D 2A 28.5A 45A µs ms 4 3. Tc = 25 C Tj = 5 C Single Pulse ms DC 2 25 5 75 25 5 V DS, Drain-to-Source Voltage (V) Starting T J, Junction Temperature ( C) Fig 3. Maximum Safe Operating Area Fig 4. Maximum Avalanche Energy Vs. Drain Current Thermal Response ( Z thjc ). D =.5.2..5 P DM.2. t. t 2 SINGLE PULSE ( THERMAL RESPONSE ). Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc. E-6 E-5.... t, Rectangular Pulse Duration (sec) Fig 5. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 7
IRHMS6764, 2N7582T V (BR)DSS 5V tp VDS L DRIVER R G 2V V GS tp. D.U.T I AS.Ω + - V DD A I AS Fig 6a. Unclamped Inductive Test Circuit Fig 6b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 2V Q G 2V.2µF 5KΩ.3µF Q GS Q GD D.U.T. + V - DS V G V GS 3mA Charge Fig 7a. Basic Gate Charge Waveform I G I D Current Sampling Resistors Fig 7b. Gate Charge Test Circuit V GS V DS R D V DS 9% R G D.U.T. + - V DD V GS Pulse Width µs Duty Factor. % % V GS t d(on) t r t d(off) t f Fig 8a. Switching Time Test Circuit Fig 8b. Switching Time Waveforms 8 www.irf.com
Footnotes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á VDD = 25V, starting TJ = 25 C, L =.35 mh Peak IL = 45A, VGS = 2V Â ISD 45A, di/dt 94A/µs, VDD 5V, TJ 5 C Case Outline and Dimensions Low-Ohmic TO-254AA IRHMS6764, 2N7582T Ã Pulse width 3 µs; Duty Cycle 2% Ä Total Dose Irradiation with VGS Bias. 2 volt VGS applied and VDS = during irradiation per MIL-STD-75, method 9, condition A. Å Total Dose Irradiation with VDS Bias. 2 volt VDS applied and VGS = during irradiation per MlL-STD-75, method 9, condition A. 3.78 [.49] 3.53 [.39] A 3.84 [.545] 3.59 [.535] 6.6 [.26] 6.32 [.249].2 [.5].27 [.5].2 [.4] 7.4 [.685] 6.89 [.665] 2.32 [.8] 2.7 [.79] 3.84 [.545] 3.59 [.535] B 2 3 C 4.48 [.57] 2.95 [.5].84 [.33] MAX. 3.8 [.5] 2X 3X.4 [.45].89 [.35].36 [.4] B A 3.8 [.5] NOTES:. DIMENSIONING & TOLERANCING PER ASME Y4.5M-994. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 3. CONTROLLING DIMENSION: INCH. 4. CONFORMS TO JEDEC OUTLINE TO-254AA. PIN ASSIGNMENTS = DRAIN 2 = SOURCE 3 = GATE CAUTION BERYLLIA WARNING PER MIL-PRF-95 Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR WORLD HEADQUARTERS: N Sepulveda Blvd, El Segundo, California 9245, USA Tel: (3) 252-75 IR LEOMINSTER : 25 Crawford St., Leominster, Massachusetts 453, USA Tel: (978) 534-5776 TAC Fax: (3) 252-793 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. /24 www.irf.com 9