DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS µpa1712 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. PACKAGE DIMENSIONS (in millimeter) 8 5 FEATURES Low On-Resistance RDS(on)1 = 2 mω MAX. (VGS = V, ID = 4. A) 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain RDS(on)2 = 48 mω MAX. (VGS = 4 V, ID = 4. A) Low Ciss Ciss = 27 pf TYP. Built-in G-S Protection Diode Small and Surface Mount Package (Power SOP8) 1.8 MAX. 1.44.5 MIN. 1 4 5.37 MAX. 1.27.4 +..5.15 +..5.78 MAX..12 M 6. ±.3 4.4.5 ±.2.8. ABSOLUTE MAXIMUM RATINGS (TA = 25 C, all terminals are connected) Drain to Source Voltage VDSS 3 V Gate to Source Voltage VGSS +2 V Drain Current (DC) ID(DC) +8. A Drain Current (pulse) Notes1 ID(pulse) +32 A Total Power Dissipation (TA = 25 C) Notes2 PT 2. W Channel Temperature Tch 15 C Storage Temperature Tstg 55 to +15 C Notes 1. PW µs, Duty Cycle 1 % 2. Mounted on ceramic substrate of 12 mm 2.7 mm Gate Gate Protection Diode Drain Source Body Diode The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device acutally used, an addtional protection circuit is externally required if voltage exceeding the rated voltage may be applied to this device. Document No. D11495EJ1VDS (1st edition) Date Published December 1996 N Printed in Japan 1996
ELECTRICAL CHARACTERISTICS (TA = 25 C, all terminals are connected) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain to Source On-state Resistance RDS(on)1 VGS = V, ID = 4. A 15 2 mω RDS(on)2 VGS = 4 V, ID = 4. A 27 48 mω Gate to Source Cutoff Voltage VGS(off) VDS = V, ID = 1 ma 1. 1.7 2.5 V Forward Transfer Admittance yfs VDS = V, ID = 4. A 6 13 S Drain Leakage Current IDSS VDS = 3 V, VGS = µa Gate to Source Leakage Current IGSS VGS = +2 V, VDS = + µa Input Capacitance Ciss VDS = V 27 pf Output Capacitance Coss VGS = pf Reverse Transfer Capacitance Crss f = 1 MHz 38 pf Turn-On Delay Time td(on) ID = 4. A 3 ns Rise Time tr VGS(on) = V 15 ns Turn-Off Delay Time td(off) VDD = 15 V 25 ns Fall Time tf RG = Ω 2 ns Total Gate Charge QG ID = 8. A 55 nc Gate to Source Charge QGS VDD = 24 V 7.5 nc Gate to Drain Charge QGD VGS = V 14.5 nc Body Diode Forward Voltage VF(S-D) IF = 8. A, VGS =.8 V Reverse Recovery Time trr IF = 8. A, VGS = 6 ns Reverse Recovery Charge Qrr di/dt = 5 A/µs 4 nc Test Circuit 1 Switching Time Test Circuit 2 Gate Charge VGS PG. RG D.U.T. RG = Ω RL VDD VGS VGS Wave Form ID Wave Form ID % % 9 % VGS (on) ID 9 % 9 % % PG. IG = 2 ma 5 Ω D.U.T. RL VDD t td (on) tr td (off) tf t = 1 µ s Duty Cycle = < 1 % ton toff 2
dt - Percentage of Rated Power - % 8 6 4 2 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 2 4 6 8 12 14 16 TA - Ambient Temperature - C PT - Total Power Dissipation - W 2.8 2.4 2. 1.6 1.2.8.4 2 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Mounted on ceramic substrate of 1 2 mm 2.7 mm 4 6 8 12 14 16 TA - Ambient Temperature - C FORWARD BIAS SAFE OPERATING AREA RDS(on) Limited (at VGS = V) ID(DC) ID(pulse) ms ms DC Power Dissipation Limited 1 ms Note: Mounted on ceramic substrate of 1 2 mm 2.7 mm TA = 25 C Single Pulse.1.1 VDS - Drain to Source Voltage - V 1 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - C/W 1.1.1.1 µ µ Mounted on ceramic substrate of 1 2 mm 2.7 mm Single Pulse Channel to Ambient 1 m m m 1 1 PW - Pulse Width - s 3
FORWARD TRANSFER CHARACTERISTICS 5 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE.1 Tch = 25 C 25 C 75 C 125 C VDS = V 4 3 2 VGS = V 4.5 V 4 V 2 3 4 VGS - Gate to Source Voltage - V.4.8.2.6 VDS - Drain to Source Voltage - V yfs - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT Tch = 25 C 25 C 75 C 125 C.1 VDS = V RDS(on) - Drain to Source On-State Resistance - mω DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 6 4 2 5 ID = 4. A 5 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-State Resistance - mω 4 3 2 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS = 4 V VGS = 4.5 V VGS = V VGS(off) - Gate to Source Cutoff Voltage - V 2..5..5 GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE VDS = V ID = ma 5 5 15 Tch - Channel Temperature - C 4
RDS(on) - Drain to Source On-State Resistance - mω 4 VGS = 4 V 3 2 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE ID = 4. A - 5 5 15 Tch - Channel Temperature - C 4.5 V V ISD - Diode Forward Current - A 1.1 VGS = 4 V SOURCE TO DRAIN DIODE FORWARD VOLTAGE.5 VGS = VSD - Source to Drain Voltage - V 1. 1.5 Ciss, Coss, Crss - Capacitance - pf 1.1 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE VGS = f = 1 MHz Ciss Coss Crss td(on), tr, td(off), tf - Switching Time - ns 1 1.1 SWITCHING CHARACTERISTICS td(off) tf tr td(on) VDD = 5 V VGS(on) = V RG = Ω VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns 1.1.1 REVERSE RECOVERY TIME vs. DRAIN CURRENT IF - Diode Current - A di/dt = 5 A/ µ s VGS = 1 VDS - Drain to Source Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS 4 ID = 8 A 4 3 2 VDD = 24 V 5 V 7 V VDS 2 4 6 8 QG - Gate Charge - nc VGS 2 8 6 4 2 VGS - Gate to Source Voltage - V 5
REFERENCE Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Semiconductor device package manual Guide to quality assurance for semiconductor devices Application circuits using Power MOS FET Safe operating area of Power MOS FET Document No. TEI-122 C11531E C535E M943X MEI-122 TEA-35 TEA-37 6
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No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5