FERROXCUBE. RM10/I RM cores and accessories. Supersedes data of February Sep 01

Similar documents
FERROXCUBE DATA SHEET. RM8/I RM, RM/I, RM/ILP cores and accessories. Supersedes data of September Sep 01

FERROXCUBE DATA SHEET. E30/15/7 E cores and accessories. Supersedes data of November Feb 01

FERROXCUBE DATA SHEET. P11/7 P cores and accessories. Supersedes data of September Sep 01

FERROXCUBE DATA SHEET. E32/6/20/R Planar E cores and accessories. Supersedes data of September Sep 01

FERROXCUBE DATA SHEET. SMD common mode chokes EMI-suppression products. Supersedes data of September Sep 01

DISCRETE SEMICONDUCTORS DATA SHEET M3D176. BZV86 series Low-voltage stabistors Mar 21. Product specification Supersedes data of April 1992

DATA SHEET. 2N3553 Silicon planar epitaxial overlay transistor DISCRETE SEMICONDUCTORS Oct 27

EP5 - a new telecom core size

DISCRETE SEMICONDUCTORS DATA SHEET. handbook, 2 columns M3D118. BY328 Damper diode Sep 30. Product specification Supersedes data of May 1996

DATA SHEET. BAV23 General purpose double diode DISCRETE SEMICONDUCTORS Sep 17. Product specification Supersedes data of April 1996

DISCRETE SEMICONDUCTORS DATA SHEET. BLT70 UHF power transistor. Product specification 1996 Feb 06

DATA SHEET. BY614 Miniature high-voltage soft-recovery rectifier DISCRETE SEMICONDUCTORS Sep 26

DATA SHEET. BFR93AW NPN 5 GHz wideband transistor DISCRETE SEMICONDUCTORS Sep 18

DISCRETE SEMICONDUCTORS DATA SHEET. BLT53 UHF power transistor

DATA SHEET. 1N5225B to 1N5267B Voltage regulator diodes DISCRETE SEMICONDUCTORS Apr 26. Product specification Supersedes data of April 1992

DISCRETE SEMICONDUCTORS DATA SHEET. BFG135 NPN 7GHz wideband transistor. Product specification 1995 Sep 13

DATA SHEET. 2N5415; 2N5416 PNP high-voltage transistors DISCRETE SEMICONDUCTORS May 21

DISCRETE SEMICONDUCTORS DATA SHEET. BFG97 NPN 5 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14

DISCRETE SEMICONDUCTORS DATA SHEET

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

DISCRETE SEMICONDUCTORS DATA SHEET. BLV58 UHF linear push-pull power transistor

DATA SHEET. 2N5401 PNP high-voltage transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 08.

3D COIL 15x15 10mH ±5% 125 KHz SMD DROP RESISTANT TRANSPONDER 3D COIL 15.9x15.9 mm

DATA SHEET. BC868 NPN medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Data supersedes data of 1999 Apr 08

DISCRETE SEMICONDUCTORS DATA SHEET. BFG198 NPN 8 GHz wideband transistor. Product specification 1995 Sep 12

DISCRETE SEMICONDUCTORS DATA SHEET M3D319. BAP70-02 Silicon PIN diode. Product specification Supersedes data of 2002 Jul 02.

DISCRETE SEMICONDUCTORS DATA SHEET M3D319. BB145C Low-voltage variable capacitance diode. Preliminary specification 2001 Dec 11

DATA SHEET. BC618 NPN Darlington transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Oct Nov 05.

DATA SHEET. BC556; BC557 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 15.

DATA SHEET. PBSS4160T 60 V, 1 A NPN low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Jun 24

INTEGRATED CIRCUITS DATA SHEET. TBA120U Sound I.F. amplifier/demodulator for TV. Product specification File under Integrated Circuits, IC02

DATA SHEET. TDA8510J 26 W BTL and 2 13 W SE power amplifiers INTEGRATED CIRCUITS May 18

DATA SHEET. CR2424S Video driver hybrid amplifier DISCRETE SEMICONDUCTORS Oct 23

Topic 4 Practical Magnetic Design: Inductors and Coupled Inductors

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

DISCRETE SEMICONDUCTORS DATA SHEET. BFQ68 NPN 4 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14

DATA SHEET. TDA1553CQ 2 22 W stereo BTL car radio power amplifier with loudspeaker protection and 3-state mode switch INTEGRATED CIRCUITS.

DISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage M3D302. BZA418A Quadruple ESD transient voltage suppressor. Product specification 2002 Sep 02

DISCRETE SEMICONDUCTORS DATA SHEET. BFR94A NPN 3.5 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14

DISCRETE SEMICONDUCTORS DATA SHEET. BFT92 PNP 5 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14

PMEG3030EP. 1. Product profile. 3 A low V F MEGA Schottky barrier rectifier. 1.1 General description. 1.2 Features. 1.

PMEG3020BER. 1. Product profile. 2 A low V F MEGA Schottky barrier rectifier. 1.1 General description. 1.2 Features. 1.

DATA SHEET. PEMZ1 NPN/PNP general purpose transistors DISCRETE SEMICONDUCTORS Nov 07. Product specification Supersedes data of 2001 Sep 25

SMT Inductors SIMID 1812-T B82432-T. Data Sheet

DISCRETE SEMICONDUCTORS DATA SHEET. BFR520 NPN 9 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14

DATA SHEET. BC847BPN NPN/PNP general purpose transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 26.

DISCRETE SEMICONDUCTORS DATA SHEET. BAS321 General purpose diode. Product specification Supersedes data of 1999 Feb 09.

DISCRETE SEMICONDUCTORS DATA SHEET

DATA SHEET. BSR62 PNP Darlington transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr Nov 11.

DISCRETE SEMICONDUCTORS DATA SHEET. 1PS76SB10 Schottky barrier diode. Product specification Supersedes data of 1996 Oct 14.

Planar PIN diode in a SOD882 leadless ultra small SMD plastic package. Pin Description Simplified outline Symbol 1 cathode

DATA SHEET. PMBT5401 PNP high-voltage transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 15.

DISCRETE SEMICONDUCTORS DATA SHEET M3D319. BAS521 High voltage switching diode. Product specification 2003 Aug 12

DISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage M3D088. BB200 Low-voltage variable capacitance double diode. Product specification 2001 Oct 12

DATA SHEET. TDA2546A Quasi-split-sound circuit with 5,5 MHz demodulation INTEGRATED CIRCUITS

DISCRETE SEMICONDUCTORS DATA SHEET. PMBT2222; PMBT2222A NPN switching transistors. Product specification Supersedes data of 1999 Apr 27.

DATA SHEET. 2PC945 NPN general purpose transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 May 28.

DISCRETE SEMICONDUCTORS DATA SHEET. BF998WR N-channel dual-gate MOS-FET. Product specification Supersedes data of 1995 Apr 25.

BC846/BC546 series. 65 V, 100 ma NPN general-purpose transistors. Type number [1] Package PNP Philips JEITA JEDEC

DATA SHEET. BYD71 series Ultra fast low-loss controlled avalanche rectifiers DISCRETE SEMICONDUCTORS Sep 19

DISCRETE SEMICONDUCTORS DATA SHEET M3D743. BZA900A-series Quadruple ESD transient voltage suppressor. Product specification 2001 Sep 03

DATA SHEET. BF450 PNP medium frequency transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Jul 11.

EMC Components. RF Chokes High Current B82432-H. Data Book Supplement

DATA SHEET. BF324 PNP medium frequency transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Jul 07.

DATA SHEET. BAV70 High-speed double diode DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Oct Apr 03.

DISCRETE SEMICONDUCTORS DATA SHEET M3D319. BAS716 Low-leakage diode. Product specification 2003 Nov 07

DISCRETE SEMICONDUCTORS DATA SHEET M3D124. BGA2003 Silicon MMIC amplifier. Product specification Supersedes data of 1999 Jul 23.

DATA SHEET. PBSS4140V 40 V low V CEsat NPN transistor DISCRETE SEMICONDUCTORS Jun 20. Product specification Supersedes data of 2001 Nov 05

Connector MACHINE PIN SOCKET EMS SERIES FEATURES SPECIFICATIONS KINDS OF BASE

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

DISCRETE SEMICONDUCTORS DATA SHEET M3D176. 1N914; 1N914A; 1N914B High-speed diodes. Product specification Supersedes data of 1999 May 26.

DISCRETE SEMICONDUCTORS DATA SHEET. BFG10W/X UHF power transistor. Product specification 1995 Sep 22

DATA SHEET. BGA2776 MMIC wideband amplifier DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Oct Aug 06.

DATA SHEET. BGA2771 MMIC wideband amplifier DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Oct Aug 06.

Ferrites and accessories

INTEGRATED CIRCUITS DATA SHEET. TDA1029 Signal-sources switch. Product specification File under Integrated Circuits, IC01

DISCRETE SEMICONDUCTORS DATA SHEET. BLW29 VHF power transistor

DATA SHEET. BAV23S General purpose double diode DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 May 05.

DATA SHEET. TDA1558Q 2 x 22 W or 4 x 11 W single-ended car radio power amplifier INTEGRATED CIRCUITS

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PMEG4010ER. 1. Product profile. 1 A low V F MEGA Schottky barrier rectifier. 1.1 General description. 1.2 Features and benefits. 1.

BF1100; BF1100R IMPORTANT NOTICE. use

PMLL4148L; PMLL4448. High-speed switching diodes. Type number Package Configuration. PMLL4148L SOD80C - single diode PMLL4448 SOD80C - single diode

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

DATA SHEET. BFS540 NPN 9 GHz wideband transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Dec 05.

DISCRETE SEMICONDUCTORS DATA SHEET

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

INTEGRATED CIRCUITS DATA SHEET. TEA5594 AM/FM radio receiver circuit. Product specification File under Integrated Circuits, IC01

DATA SHEET. BGD MHz, 17 db gain power doubler amplifier DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Oct 25

INTEGRATED CIRCUITS DATA SHEET. TDA8571J 4 40 W BTL quad car radio power amplifier. Product specification Supersedes data of 1998 Mar 13.

DATA SHEET. TDA1556Q 2 x 22 W stereo BTL differential amplifier with speaker protection and dynamic distortion detector INTEGRATED CIRCUITS

INTEGRATED CIRCUITS DATA SHEET. TDA3615J Multiple voltage regulator. Product specification Supersedes data of 1998 Jun 23.

DATA SHEET. BZA800AL series Quadruple ESD transient voltage suppressor DISCRETE SEMICONDUCTORS. Product specification 2002 Jan 11.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

DISCRETE SEMICONDUCTORS DATA SHEET M3D438. BLF1043 UHF power LDMOS transistor. Product specification Supersedes data of 2002 November 11.

DATA SHEET. BAV74 High-speed double diode DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 May Jan 14.

DISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage M3D109. BGA6489 MMIC wideband medium power amplifier. Product specification 2003 Sep 18

DISCRETE SEMICONDUCTORS DATA SHEET M3D058. BLF346 VHF power MOS transistor. Product specification Supersedes data of 1996 Oct 02.

HSTL bit to 18-bit HSTL to LVTTL memory address latch with 12 kohm pull-up resistor INTEGRATED CIRCUITS

Transcription:

FERROXCUBE DATA SHEET RM1/I Supersedes data of February 22 24 Sep 1

RM1/I CORE SETS Effective core parameters SYMBOL PARAMETER VALUE UNIT Σ(I/A) core factor (C1).462 mm 1 V e effective volume 431 mm 3 I e effective length 44.6 mm A e effective area 96.6 mm 2 A min minimum area 89.1 mm 2 m mass of set 22 g handbook, halfpage 13.5.5 16.2.25 5.1 ±.1 1.9 28.5 1.3 24.7 1.1 ;;; ;;;; ;;; O 1.9.4 O 21.2.9 12.4.6 MGC97 18.6.1 Dimensions in mm. Fig.1 RM1/I core set. Core sets for filter applications Clamping force for A L measurements, 6 ±2 N. GRADE A L (nh) µ e AIR GAP (µm) Core sets for general purpose transformers and power applications Clamping force for A L measurements, 6 ±2 N. 3D3 315 ±3% 116 38 RM1/I-3D3-A315 4 ±5% 147 28 RM1/I-3D3-A4 63 ±8% 232 14 RM1/I-3D3-A63 19 ±25% 7 RM1/I-3D3 3H3 4 ±3% 147 33 RM1/I-3H3-A4 63 ±3% 232 19 RM1/I-3H3-A63 1 ±1% 367 11 RM1/I-3H3-A1 44 ±25% 162 RM1/I-3H3 GRADE A L (nh) µ e AIR GAP (µm) 3C81 16 ±3% 59 98 RM1/I-3C81-E16 25 ±3% 92 57 RM1/I-3C81-A25 315 ±3% 116 43 RM1/I-3C81-A315 4 ±3% 147 33 RM1/I-3C81-A4 63 ±3% 232 19 RM1/I-3C81-A63 55 ±25% 22 RM1/I-3C81 24 Sep 1 2

RM1/I GRADE A L (nh) 3C9 16 ±3% 59 98 RM1/I-3C9-A16 25 ±3% 92 57 RM1/I-3C9-A25 315 ±3% 116 43 RM1/I-3C9-A315 4 ±3% 147 33 RM1/I-3C9-A4 63 ±3% 232 19 RM1/I-3C9-A63 45 ±25% 165 RM1/I-3C9 3C91 55 ±25% 22 RM1/I-3C91 3C94 16 ±3% 59 98 RM1/I-3C94-A16 25 ±3% 92 57 RM1/I-3C94-A25 315 ±3% 116 43 RM1/I-3C94-A315 4 ±3% 147 33 RM1/I-3C94-A4 63 ±3% 232 19 RM1/I-3C94-A63 45 ±25% 165 RM1/I-3C94 3C96 45 ±25% 168 RM1/I-3C96 3F3 16 ±3% 59 98 RM1/I-3F3-A16 25 ±3% 92 57 RM1/I-3F3-A25 315 ±3% 116 43 RM1/I-3F3-A315 4 ±3% 147 33 RM1/I-3F3-A4 63 ±3% 232 19 RM1/I-3F3-A63 45 ±25% 149 RM1/I-3F3 3F35 31 ±25% 119 RM1/I-3F35 Core sets of high permeability grades Clamping force for AL measurements, 6 ±2 N. µ e AIR GAP (µm) GRADE A L (nh) µ e 3E27 17 ± 25% 393 RM1/I-3E27 3E5 16 +4/ 3% 588 RM1/I-3E5 24 Sep 1 3

RM1/I Properties of core sets under power conditions B(mT)at Properties of core sets under power conditions (continued) Note 1. Measured at 6 C. CORELOSS(W)at GRADE H=25A/m; f = 25 khz; f=1khz; f=1khz; f = 4 khz; f = 25 khz; Bˆ = 2 mt; Bˆ =1mT; Bˆ = 2 mt; Bˆ =5mT; T = 1 C T = 1 C T=1 C T = 1 C T = 1 C 3C81 315 1. 3C9 32.52.55 3C91 315.3 (1) 1.8 (1) 3C94 32.41 2.3 3C96 34.3 1.8.77 3F3 315.48.82 3F35 315 B (mt) at CORE LOSS (W) at GRADE H=25A/m; f = 5 khz; f = 5 khz; f=1mhz; f=3 MHz; f = 25 khz; Bˆ =5mT; Bˆ = 1 mt; Bˆ =3mT; Bˆ =1mT; T = 1 C T = 1 C T=1 C T = 1 C T = 1 C 3C81 315 3C9 32 3C91 315 3C94 32 3C96 34 1.5 3F3 315 3F35 315.6 4.5 24 Sep 1 4

RM1/I COIL FORMER General data PARAMETER SPECIFICATION Coil former material polybutyleneterephtalate (PBT), glass-reinforced, flame retardant in accordance with UL 94V-; UL file number E45329(R) Pin material copper-tin alloy (CuSn), tin-lead alloy (SnPb) plated, transition to lead-free (Sn) ongoing Maximum operating temperature 155 C, IEC 685, class F Resistance to soldering heat IEC 668-2-2, Part 2, Test Tb, method 1B, 35 C, 3.5 s Solderability IEC 668-2-2, Part 2, Test Ta, method 1 3.81 3.81 5.8 3.81 3.81.7 12.2.2 (1 min. ) 3.1 1.2 3.45.1.3 2.54 handbook, full pagewidth 27.94 13.8 11.1 +.2 21.9 33 21.2 12.5.2 1.3 +.15 1 3 23.3 3.2 4.3 1.6 +.15 CBW528 Dimensions in mm. Fig.2 RM1/I coil former (DIL). Winding data for RM1 coil former (DIL) NUMBER OF SECTIONS AVERAGE LENGTH OF TURN (mm) WINDING AREA (mm 2 ) WINDING WIDTH (mm) 1 52 44.2 1. CPV-RM1-1S-12PD 24 Sep 1 5

RM1/I COIL FORMER General data PARAMETER SPECIFICATION Coil former material polyester (UP), glass-reinforced, flame retardant in accordance with UL 94V- ; UL file number E614(M) Pin material copper-tin alloy (CuSn), tin (Sn) plated Maximum operating temperature 18 C, IEC 685, class H Resistance to soldering heat IEC 668-2-2, Part 2, Test Tb, method 1B, 35 C, 3.5 s Solderability IEC 668-2-2, Part 2, Test Ta, method 1 2.32 12.25.1 (1.4 min.) 13.8 min. 15.24 1.16.65 1 1.3.6 handbook, full pagewidth 1.4 min. 11.2 +.1 21.2 12.5.2 1.3 +.15 1.8 max..55 5.5 2.54 CBW613 Dimensions in mm. Fig.3 RM1/I coil former. Winding data for RM1/I coil former NUMBER OF SECTIONS NUMBER OF PINS PIN POSITIONS USED AVERAGE LENGTH OF TURN (mm) WINDING AREA (mm 2 ) WINDING WIDTH (mm) 1 12 all 52.3 42.7 1.3 CSV-RM1-1S-12P 24 Sep 1 6

RM1/I MOUNTING PARTS General data ITEM Clamping force Clip material Clip plating SPECIFICATION 3 N stainless steel tin-lead alloy (SnPb), transition to lead-free (Sn) ongoing Solderability IEC 668-2-2, Part 2, Test Ta, method 1 Type number CLI/P-RM1/I handbook, halfpage 4.5 17.5 15.1 R4.7 5 MGC9 Dimensions in mm. Fig.4 Mounting clip for RM1/I. 24 Sep 1 7

RM1/I DATA SHEET STATUS DEFINITIONS DATA SHEET STATUS Preliminary specification PRODUCT STATUS Development DEFINITIONS This data sheet contains preliminary data. Ferroxcube reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product specification Production This data sheet contains final specifications. Ferroxcube reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. DISCLAIMER Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Ferroxcube customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Ferroxcube for any damages resulting from such application. PRODUCT STATUS DEFINITIONS STATUS INDICATION DEFINITION Prototype Design-in Preferred Support These are products that have been made as development samples for the purposes of technical evaluation only. The data for these types is provisional and is subject to change. These products are recommended for new designs. These products are recommended for use in current designs and are available via our sales channels. These products are not recommended for new designs and may not be available through all of our sales channels. Customers are advised to check for availability. 24 Sep 1 8