Built-in SIF demodulator circuit eliminates need for adjustment. U.S TV sound multiplex demodulation IC AN582FJM Overview AN582FJM is the U.S. TV sound multiplex demodulation IC corresponding to both I 2 C bus and parallel control. SIF demodulator, STEREO demodulator, SAP demodulation, dbx noise reduction and sound AGC function are built-in. Adopting.4mm pitch QFN package and suitable for builtin micro tuner pack. Feature Supports I 2 C bus and parallel control. Built-in SIF demodulation circuit Adjustment-free (with SIF input). 2 adjustments required when with base band. Built-in sound AGC circuit Significant reduction of external parts. Low power consumption TYP:V CC =5V, I TOT =28mA Near pin compatible with AN58FJM(Japanese TV sound multiplexed demodulation IC) 6.2±. (6.) 2 4 22 -C.5 (.6) (6.) 6.2±. 44 2 R. (.6). SEATING PLANE.6±. 5.±. (.) 2 44 5.±. (.) (.48) 4 22 2.4 (.48).2±. (.5).8 max.6±.6.8 M QFN44-P-66A Unit : mm Applications TV,DVD,PC, STB for U.S. Products and specifications are subject to change without notice. Please ask for the latest Product Standards to guarantee the satisfaction of your product requirements. New publication, effective from 4 Jan. 25 M674AE Kotari-yakemachi, Nagaokakyo, Kyoto 67-852, Japan Tel. +8-75-95-85 http://panasonic.co.jp/semicon,
Block Diagram Vcc 5V Base Band Input 4.7µF SIF Input pf. kω.22µf.µf.µf Lout Rout 8 kω 24 26 8 7 9 28 5 6 2 Mode Control SW 4.7µF 25 I 2 C/PARA 4 AGC 5 MODE 6 FOMO 9 MUTE SIF Demod Input VCA SIF/BB SW Stereo SAP Noise Offset SAP Det SAP Demod Noise Det Pilot Det PLL Pilot SAP out L+R 75µs De-Emph L-R (L-R)/SAP Switch Offset Matrix & Mode SW Offset Wide Band Expand Spectral Expand dbx De-Emph AGC Wide Band RMS Det Spectral RMS Det I 2 C Decoder Wide Band Spectral SCL/STID kω 27 SDA/SAPID kω 29 8 4 4 2 PE.µF µf (Ta).µF.µF (Ta).22µF ( ) SIF/BB 4.µF 2.µF (Ta) ± Tantalum capacitor Note) License agreement with THAT corporation is required to use built-in dbx TV noise reduction IC. Pin Descriptions Pin No. Description Pin No. Description Pin No. Description Spectral Timing 6 SCL/STID 2 Spectral DET 7 Pilot DET 2 AGC DET Spectral 8 Stereo PLL Right-Channel Output 4 I 2 C / Parallel SW 9 V CC 4 5 AGC SW 2 5 6 Mode SW 2 6 Left-Channel Output 7 22 7 8 2 8 L-R REF 9 Force Monaural SW 24 INPUT 9 Mute SW 25 SIF REF 4 Wide Band Timing SIF/Base Band SW 26 Stereo REF 4 Wide Band DET 2 SAP Noise DET 27 SDA/SAPID 42 28 GND 4 4 SAP DET 29 GND2 44 5 L+R REF PE
Absolute maximum Ratings Parameter Symbol Rating Unit Note Storage temperature Tstg 55 to 25 C Operating ambient temperature Topr 2 to 85 C Supply voltage V CC 6. V Supply current I CC 8 ma Power dissipation Pd 4 mw Note) The values the condition not exceeding the above absolute maximum ratings and the power dissipation. Note2) Except for the power dissipation, operation ambient temperature and storage temperature, all ratings are for Ta=25 C. Note) The power dissipation shown is the value at Ta=85 C for the independent ( unmounted) IC package without a heat sink. Operating Supply Voltage Range Supply voltage range V CC 4.5 V to 5.5 V Standard signal input level [SIF Input Signal] Carrier frequency: 4.5 MHz, Carrier Level: 9 µv at Input Pin, FM Deviation:±25 khz on Monaural Hz modulation Pre-emphasis:OFF, ±5 khz on L-R Hz modulation dbx-nr:off, ±5 khz on Pilot signal only, ±5 khz on SAP carrier only [Base Band Input Signal] L+R : mvrms (mod,pre-emphasis:off) L-R :2 mvrms (mod,dbx-nr:off) Pilot signal :2 mvrms (f H =5.74 khz) SAP carrier:6 mvrms (5f H =78.67 khz)
Electrical Characteristics (unless otherwise specified, ambient temperature is 25 C± 2 C,V CC =5.V,NR:ON) Parameter Symbol Condition Min. Typ. Max. Unit Circuit current I CC Vi(SIF)=9µV,f=4.5MHz 7 28 8 ma Monaural output level V O(Mon) (Monaural)kHz,mod 45 5 55 mvr ms Monaural frequency characteristic () V (mon) (Monaural)Hz/kHz, mod - Monaural frequency characteristic (2) V 2(mon) (Monaural)kHz/kHz, mod - Monaural total harmonic distortion THD (Mon) (Monaural)kHz,mod.2 Monaural S/N V n(mon) S:(Monaural)kHz,mod N:No signal CCIR filter,q-peak response 4 4 L/R channel balance V LR(mon) (Monaural)kHz,mod -.5.5 Stereo output level V o(st) (L(R)-only)kHz,mod 4 5 6 mvr ms Stereo frequency response () V (st) (L(R)-only)Hz/kHz, mod, - Stereo frequency response (2) V 2(st) (L(R)-only)kHz/kHz, mod, - - Stereo total harmonic distortion THD (st) (L(R)-only)kHz,mod.. Stereo S/N V n(st) S:L(R)-only,kHz,mod N:Pilot signal CCIR filter,q-peak response 9 42 Stereo detection sensibility V TH(st) Pilot signal,=2mvrms 5 7 Stereo Detection hysteresis V HY(st) Pilot signal 6 Stereo separation () SEP (L(R)-only)4Hz,mod 2 5 Stereo separation (2) SEP2 (L(R)-only)2kHz,mod 2 5 SAP output level V O(SAP) (SAP)kHz,mod 7 5 68 mvr ms SAP frequency response () V (SAP) (SAP)Hz/kHz,mod -2 2 SAP frequency response (2) V 2(SAP) (SAP)8kHz/kHz,mod - - SAP total harmonic distortion THD (SAP) (SAP)kHz,mod.7.5
Electrical Characteristics (unless otherwise specified, ambient temperature is 25 C± 2 C,VCC=5.V,NR:ON) Parameter Symbol Condition Min. Typ. Max. Unit SAP S/N V n(sap) S:(SAP)kHz,mod N:SAP carrier CCIR filter Q-PEAK response 42 5 SAP detection hysteresis V TH(SAP) SAP carrier signal mod=6mvrms 2 45 SAP detection hysteresis V HY(SAP) SAP carrier signal 6 SAP demodulation dynamic range () DSAPL (SAP)fm=kHz,fc=72kHz Distortion of modulation ratio is more than 2 mod. SAP demodulation dynamic range (2) DSAPH (SAP)fm=kHz,fc=85kHz Distortion of modulation ratio is more than 2 mod. SAP to Stereo CT (SAP)kHz,mod (Stereo)Pilot signal 5 6 Stereo to SAP CT 2 (Stereo)kHz,mod (SAP) carrier signal 5 72 SAP to Monaural CT (SAP)kHz,mod 5 64 Monaural to SAP CT 4 (Monaural)kHz,mod (SAP) carrier signal 5 72 AGC gain * V AGC (Monaural)kHz,mod 6 55 mvrm s AGC gain 2* V AGC2 (Monaural)kHz,mod 6 27 4 mvrm s Unless otherwise specified, acceptable value is when AGC function is OFF. * AGC function is ON
Request for your special attention and precautions in using the technical information and semiconductors described in this material () An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. () We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2 SEP