Comparison of SiC and Si Power Semiconductor Devices to Be Used in 2.5 kw DC/DC Converter
|
|
- Toby Bailey
- 5 years ago
- Views:
Transcription
1 Comparison of SiC and Si Power Semiconductor Devices to Be Used in 2.5 kw DC/DC Converter M. G. Hosseini Aghdam Division of Electric Power Engineering Department of Energy and Environment Chalmers University of Technology Gothenburg, Sweden T. Thiringer Division of Electric Power Engineering Department of Energy and Environment Chalmers University of Technology Gothenburg, Sweden Abstract With the fast development of silicon carbide (SiC) technology, SiC-based power semiconductor devices have started to complete Si components in transportation applications. In this paper, two dc/dc converters for hybrid electric vehicles (HEs) application are designed and analyzed. The losses, efficiency, junction temperature, and the volume and weight of heat sinks of two converters are calculated for a Si and SiC solution for a 2.5kW dc/dc converter. A performance comparison of the parameters mentioned above gives that SiC-based technology shows better performances than Si-based power semiconductor devices in the investigated dc/dc converter system. Finally, an economical evaluation shows that the SiC components can cost almost 2.5 times more in order to have the same total cost as for a Si solution for a 15 years operation. Keywords-Si and SiC power semicondcutors; dc/dc converter; hybrid electric vehicle I. INTRODUCTION Currently, almost all power electronics converters use Sibased power semiconductor devices. However, in recent years, a large effort has been devoted on the development of SiCbased power semiconductor switches [1-2]. This development is caused by the fact that SiC-based power semiconductor devices have higher breakdown voltages because of their higher electric breakdown filed. Since SiC is a wide-bandgap semiconductor, SiC allows higher concentration of doping and consequently a lower specific on-state resistance. SiC power semiconductor devices can as a consequently of this fact operate at high temperature. SiC-based power semiconductor devices also have excellent reverse recovery characteristics [3]. With less reverse recovery current, the switching loss is reduced. The high- frequency switching capability of a semiconductor is directly proportional to its drift velocity. The drift velocity of SiC is more than twice the drift velocity of Si. Therefore it is expected that SiC-based power semiconductor devices could be switched at higher frequencies than their Si counterparts. Many devices have been proposed for SiC, but only SiC Schottky diodes are commercially available so far. Single device rating is up to 1200 / 50 A [4]. Semi South, SiCED and Rock- well have also developed some prototypes. Recently, SiC MOSFETs (from Cree) are also available for research purpose. Moreover, other high power modules have been fabricated and tested, such as the 1200 /300 A Si IGBT/SiC Schottky diode single phase module (Cree) [5] and 55 kw Si IGBT/SiC Schottky diode inverter [6]. At the end of 2006, Cree announced the first Si IGBT/SiC Schottky diode co-package products (CID150660) [7]. Power electronics circuits play an important role in HEs. The hurried demand for HEs enhanced the significance of the power electronics circuits in these vehicles. The switches used for HEs application are typically MOSFETs or IGBTs, although other types of switches may be used [8]. But, MOSFETs are widely preferred power devices in low power applications because they can be operated at high frequencies with relatively low loss switching behavior. The using of MOSFET in power electronics circuits of HEs shows quite good results [9]. The purpose of this contribution is to present the comparison of SiC and Si based power semiconductor devices to be used in 2.5 kw insulated full-bridge dc/dc converter for HEs application. In order to make a performance comparison of SiC-based devices, two full-bridge dc/dc converter systems are designed and analyzed based on conventional Si MOSFETs/Si diodes and SiC MOSFETs/SiC Schottky diodes. The main objective is to determine and analyze of losses in two cases. a) With the same heat sink for two systems, comparing the system temperature. b) With the same junction temperature; comparing the needed volume and weight of heat sink. The final aim is an economical comparison of Si and SiC based power semiconductor devices to be used in a dc/dc converters. II. DC/DC CONERTER SYSTEM In HEs, a dc/dc power supply is needed for the 12 supply. There are various power electronics converters available for dc/dc power supplies. In this paper, an insulated full-bridge dc/dc converter is selected. A full-bridge, transformer isolated, dc/dc converter circuit is depicted in Fig. 1. This topology uses a high frequency transformer between the source and the load to provide galvanic isolation. The full-bridge dc/dc converter consists of four parts: a high frequency inverter, a high frequency transformer, a rectifier, and an LC filter. The high frequency inverter consists 1035
2 of four switching modules (Q 1 Q 4 ). According to four-switch combination, three voltage levels, + dc, - dc, and 0, can be synthesized for the output voltage. When switches Q 1 and Q 4 are turned on simultaneously, the input voltage + dc appears at the output. If switches Q 2 and Q 3 are turned on at the same time, the output voltage is reversed to - dc. When all the switches are off, the primary side of transformer sees no voltage. Diodes, D 1 and D 2, rectify the voltage fed to them from the secondary side of the transformer. This rectified voltage then passes through an LC filter to feed the dc load. The operation waveforms of the converter are shown in Fig. 2. The pure current of MOSFETs and diodes can be observed in Fig. 3 and Fig. 4, respectively. Also the average and rms values of the currents, which flow through the MOSFET and diode, can be calculated as I Q,ave =4.51 A, I Q,rms =2.44 A, I D,ave = A, and I D,rms =61.10 A. TABLE I. SYSTEM PARAMETERS Power rating 2.5 kw Input voltage Output voltage 12 Switching frequency 100 khz oltage ripple 1% Current ripple 5% TABLE II. POWER DEICES USED IN THE CONERTERS Item oltage rating Current rating Company SiC MOSFETs A*2 Cree Si MOSFETs A*1 IXYS SiC Schottky Diodes A*25 Infineon AG Si Diodes A*25 Infineon AG Fig. 1. The full bridge, transformer-isolated, dc/dc converter. TABLE III. DEICE CHARACTERISTICS AT ROOM TEMPERATURE Characteristics Si SiC MOSFET on-state resistance 350 mω 125 mω (0.25Ω/2) MOSFET output capacitance 420 pf 42 pf (21pF*2) Diode series resistance 8.61 mω 3.36 mω Diode reverse recovery parameters α=3.5424*10-8 α=2.1670*10-8 β=1.2698*10-8 β=2.3300*10-8 Fig. 2. Operation waveforms of the insulated full-bridge dc/dc converter. The dc/dc converter investigated here is designed to supply a 2.5 kw load with a regulated output voltage of 12 and the input voltage is assumed to be fluctuating between 300 and 450. The system parameters are summarized in Table I. In the Si-based converter, four 600 and 20 A singleswitch MOSFET modules from IXYS [10] are used as the main switches with a switching frequency 100 khz. In the SiCbased converter system, the Si MOSFETs and Si diodes are replaced with SiC MOSFETs and SiC Schottky diodes, respectively. In this system, an 800 /10 A SiC MOSFET from Cree is used as the main power switch. Since commercial SiC MOSFET module data are currently not available, their parameters are calculated by 2D numerical simulations and theoretical analysis [11]. SiC Schottky diodes and Si diodes used in this study are rated 300 and 10 A from Infineon AG which their parameters obtained from laboratory results [1]. Based on the above discussion and also considering the availability of devices, the selected devices and their parameters at room temperature are listed in Tables II and III. Fig. 3. MOSFET current waveform. Fig. 4. Diode current waveform. III. CONERTER POWER LOSSES CALCULATION In order to investigate the performance of a SiC-based converter system, power losses analysis is performed based on 1036
3 the parameters in Table III. The converter has two kinds of power losses, conduction losses and switching losses. A. Conduction Losses The expression for the conduction loss of a diode is given by [12]: 2 P D, cond I D, rms RD + I D, ave = (1) where I D,rms and I D,ave are the rms and average value of the current value through the diode, respectively. The conduction loss of a MOSFET depends only on the onstate resistance of the MOSFET; therefore, the conduction loss expression is as simple as D 2 Q, cond = IQ, rms Ron. (2) P R on depends on the specific on resistance of the material (R D ). R D is proportional to a power of the temperature. This is γ γ because RD = 1/ μn and μn 1/ T. Thus, R D T where γ is a constant and is 2.42 for Si and 1.3 for 6H-SiC at 300 o K [13]. B. Switching Losses Although the reverse recovery current is much smaller for Schottky diodes than that of pn diodes, the reverse recovery loss dominates its switching losses [1] and is accordingly of interest. So in this model, the other losses are neglected and only reverse recovery loss is considered. Assuming that the diode sees a constant reverse voltage when it is off and it is switched at constant frequency [1], then PD, = f i dt. (3) SW s R d The reverse recovery time-integral current can be approximated linearly as a function of the forward current [1]: i dt = α I + β (4) d F where ε r is the permittivity of semiconductor, E c is the electric breakdown field, b is the breakdown voltage, E on and E off are the losses during the charging and discharging of two device capacitances: drain-source and drain-gate. These capacitances are charged and discharged by effective currents of (K 1-1) J and (K 2 +1) J, respectively. ( ) g m GH th where K1 = and K J g = ( ) m th GL 2. where g m is the transconductance, J is the current density, GH is highest gate voltage applied, GL is lowest gate voltage applied, and th is the threshold voltage [14]. The energy loss for a turn-on and a turn-off of a MOSFET is the sum of (7) and (8) Etot = Eon + Eoff = ε r Ec + (7) 3 b K 1 1 K If a MOSFET is switched at a frequency of f s, then its switching losses can be represented as PQ, sw = Etot fs = fs ε r Ec +. (8) 3 b K1 1 K2 + 1 The conduction, switching and total loss profiles of a diode and a MOSFET for the different power level, calculated using the methods introduced above, are shown in Fig. 5 to Fig. 10. The total power losses of the converter (four MOSFET modules and two diodes) are plotted in Fig. 11. As it can be seen in these figures, the power losses of the SiC-based power semiconductor devices are lower than those of the Si-based power semiconductor devices. Consequently, the efficiency of the SiC- based converter system is higher than the one of the Si-based system. Note that the parameters of the power semiconductor devices are considered at room temperature. J For a Si diode, α and β are temperature dependent and their values are given in Table III at room temperature. But, for a SiC Schottky diode, α and β are temperature independent and their values are given in Table III [1]. The switching losses of a MOSFET can be calculated using piece-wise linear turn-on and turn-off waveforms. This is an approximation, which does not consider the physics behind the switching. The turn-on and turn-off energy loss equations are derived in [14] as E on 1 = ε E (5) 3 r c ( K1 1) b E off 1 = ε E (6) 3 r c ( K2 + 1) b Fig. 5. The conduction loss profile of a MOSFET versus load. 1037
4 Fig. 6. The switching loss profile of a MOSFET versus load. Fig. 9. The switching loss profile of a diode versus load. Fig. 7. The total loss profile of a MOSFET versus load. Fig. 10. The total loss profile of a diode versus load. Fig. 8. The conduction loss profile of a diode versus load. Fig. 11. The total loss profile of the converter versus load. 1038
5 I. JUNCTION TEMPERATURE AND HEATSINK In order to investigate the performance of a SiC-based converter system, power losses analysis is performed based on the parameters in Table III. The converter has two kinds of power losses, conduction losses and switching losses. A. With the same heat sinks per device for the two converters The expression for the conduction loss of a diode is given by [12]: In this case, the same heat sinks per devices are used for the two converters. The parameters of heat sinks are as follows: Heat sink of diodes: olume: cm 3 Weight: grams Thermal resistance: 0.28 o C/W Heat sinks of MOSFETs: olume: cm 3 Weight: grams Thermal resistance: 1.30 o C/W With the same ambient temperature 40 o C, the junction temperature of the SiC MOSFET and the Si MOSFET are o C and o C, respectively. It is noted that unlike the Si MOSFET, the on-state resistance of the SiC MOSFET decreases as temperature increases. The reason for this is that the relative large channel resistance in the SiC MOSFET. Also, the junction temperature of the SiC Schottky diode and Si diode are o C and o C, respectively. Therefore, with the same heat sink for two converters, the SiC system has a much lower junction temperature. B. With the same junction temperature and different heat sinks With the same ambient temperature 40 o C and the same junction temperature for the SiC and the Si-based power semiconductor devices, it is possible to select different heat sinks for Si and SiC devices. The parameters of required heat sinks are as follows: Heat sink of Si-based diodes: olume: cm 3 Weight: grams Thermal resistance: 0.28 o C/W Heat sink of SiC-based Schottky diodes: olume: cm 3 Weight: grams Thermal resistance: 0.40 o C/W Heat sinks of Si-based MOSFETs: olume: cm 3 Weight: grams Thermal resistance: 1.30 o C/W Heat sinks of SiC-based MOSFETs: olume: cm 3 Weight: grams Thermal resistance: 4.7 o C/W As it can be seen, the required heat sink size of the SiCbased power semiconductor devices is only a fraction of the heat sink size needed for the Si devices if the device junction temperatures are kept the same. As a result, the SiC-based converter system is smaller in size using the same thermal limit.. ECONOMICAL EALUATION The total cost for a power semiconductor solution consists of two parts: loss cost, and investment cost. Assume that the dc/dc converter works 2 hours per day for a HE application, 50% in full-load and 50% in one-fourth of full-load. It also is assumed that it will be used for 15 years and the cost for loss is 0.1 /kwh. The investment cost of the Sibased power semiconductor devices is The total energy loss for Si-based components will be: = kwh (9) Finally, the loss cost for Si-based components is give by (10): Loss Cost of Si = kwh 0.1 /kwh = (10) The total cost for the Si solution is the sum of loss cost and investment cost, i.e.: The total cost for the Si solution = = (11) The total energy loss for SiC-based power semiconductor devices will be: = kwh (12) Finally, the loss cost for Si-based power semiconductor devices is give by (13): Loss Cost of SiC = kwh 0.1 /kwh = (13) Therefore, the SiC components can be more expensive in order to have the same total cost as for the Si solution. I. CONCLUSION In this paper, a SiC-based power semiconductor devices full- bridge insulated-transformer dc/dc converter system is designed and compared with a Si-based devices converter system. The simulation results show the power loss of the SiC converter system is 60% of the Si-based system in full-load condition. If the device junction temperatures are kept the same, the heat sink size and weight of the SiC converter is 46% 1039
6 of the Si system. Finally, an economical evaluation shows that the SiC-based power semiconductor devices can almost 2.5 times more in order to have the same total cost as for a Si solution for a 15 years operation. REFERENCES [1] B. Ozpineci, and L. M. Tolbert, Characterization of SiC Schottky Diodes at Different Temperatures, IEEE Power Electronics Letters, ol. 1, No. 2, pp , [2] T. F. Zhao, J. Wang, A. Q. Huang, and A. Agarwal, Comparisons of SiC MOSFET and Si IGBT Based Motor Drive Systems, Proceeding of the 42 nd Annual Meeting IEEE Industry Application Conference, pp , [3] A. Elasser, M. Kheraluwala, M. Ghezzo, R. Steigerwald, N. Krishnamurthy, J. Kretchmer, and T. P. Chow, A comparative Evaluation of New Silicon Carbide Diodes and State-of-the-Art Silicon Diodes for Power Electronic Applications, IEEE Transactions on Industry Applications, ol. 39, No. 4, pp , [4] Cree Inc., Kansai Electric and Cree Demonstrate a 100 ka Silicon Carbide Three Phase Inverter, [5] H. Zhang, L. M. Tolbert, and B. Ozpineci, System Modeling and Characterization of SiC Schottky Power Diodes, Proceedings of the IEEE Workshops on Computers in Power Electronics, pp , [6] B. Ozpineci, M. S. Chinthavali, L. M. Tolbert, A. Kashyap, and H. A. Mantooth, A 55 kw Three-Phase Inverter with Si IGBTs and SiC Schottky Diodes, Proceeding of the 21 st Annual IEEE Applied Power Electronics Conference and Exposition, pp , [7] Cree Inc., Cree Announces First Power Switch and Diode Co-Pack, [8] B. Welchko, J. M. Nagashima, and K. M. Rahman, Inverter for Electric and Hybrid Powered ehicles and Associated System and Method, United States Patent, No , [9] A. ezzin, and K. Reichert, Power Electronics Layout in a Hybrid Electric or Electric ehicle Drive System, Proceeding of the IEEE Workshop on Power Electronics in Transportation, [10] IXYS Semiconductors Website, [11] L. Reddy, L. M. Tolbert, H. Zhang, and T. Cheek, Performance of Ultra-High Efficient Electronic Ballast for HID Lamps Using SiC Devices, Proceeding of the 42 nd Annual Meeting IEEE Industry Application Conference, pp , [12] B. J. Baliga, Modern Power Devices, John Wiley & Sons, Ltd, New York, [13] M. Bhatnagar, and B. J. Baliga, Comparison of 6H-SiC, 3C-SiC, and Si for Power Devices, IEEE Transactions on Electron Devices, ol. 40, No. 3, pp , [14] Q. Huang, and B. Zhang, Comparing SiC Switching Power Devices: MOSFET, NPN Transistor, and GTO Transistor, Solid State Electronics, ol. 44, No. 2, pp ,
Temperature-Dependent Characterization of SiC Power Electronic Devices
Temperature-Dependent Characterization of SiC Power Electronic Devices Madhu Sudhan Chinthavali 1 chinthavalim@ornl.gov Burak Ozpineci 2 burak@ieee.org Leon M. Tolbert 2, 3 tolbert@utk.edu 1 Oak Ridge
More informationSYSTEM IMPACT OF SILICON CARBIDE POWER DEVICES
SYSTEM IMPACT OF SILICON CARBIDE POWER DEVICES BURAK OZPINECI 1,3, LEON M. TOLBERT 1,2, SYED K. ISLAM 1, Md. HASANUZZAMAN 1 1 Department of Electrical and Computer Engineering The University of Tennessee,
More informationHigh-Temperature and High-Frequency Performance Evaluation of 4H-SiC Unipolar Power Devices
High-Temperature and High-Frequency Performance Evaluation of H-SiC Unipolar Power Devices Madhu Sudhan Chinthavali Oak Ridge Institute for Science and Education Oak Ridge, TN 37831-117 USA chinthavalim@ornl.gov
More informationENHANCING POWER ELECTRONIC DEVICES WITH WIDE BANDGAP SEMICONDUCTORS
ENHANCING POWER ELECTRONIC DEVICES WITH WIDE BANDGAP SEMICONDUCTORS BURAK OZPINECI Oak Ridge National Laboratory Oak Ridge, TN 37831-6472 USA ozpinecib@ornl.gov MADHU SUDHAN CHINTHAVALI Oak Ridge Institute
More informationSiC MOSFETs Based Split Output Half Bridge Inverter: Current Commutation Mechanism and Efficiency Analysis
SiC MOSFETs Based Split Output Half Bridge Inverter: Current Commutation Mechanism and Efficiency Analysis Helong Li, Stig Munk-Nielsen, Szymon Bęczkowski, Xiongfei Wang Department of Energy Technology
More informationA 55 kw Three-Phase Automotive Traction Inverter with SiC Schottky Diodes
A 55 kw Three-Phase Automotive Traction Inverter with SiC Schottky Diodes Burak Ozpineci 1 1 Oak Ridge National Laboratory Oak Ridge, TN 37831-6472 USA burak@ieee.org Madhu S. Chinthavali 2 2 Oak Ridge
More informationCharacterization and Modeling of Silicon Carbide Power Devices and Paralleling Operation
Characterization and Modeling of Silicon Carbide Power Devices and Paralleling Operation Yutian Cui 1 Madhu S. Chinthavali Fan Xu 1 Leon M. Tolbert 1, ycui7@utk.edu chinthavalim@ornl.gov fxu@utk.edu tolbert@utk.edu
More informationSIMULATION STUDIES OF HALF-BRIDGE ISOLATED DC/DC BOOST CONVERTER
POZNAN UNIVE RSITY OF TE CHNOLOGY ACADE MIC JOURNALS No 80 Electrical Engineering 2014 Adam KRUPA* SIMULATION STUDIES OF HALF-BRIDGE ISOLATED DC/DC BOOST CONVERTER In order to utilize energy from low voltage
More informationPerformance Evaluation of Full SiC Switching Cell in an Interleaved Boost Converter for PV Applications
Performance Evaluation of Full SiC Switching Cell in an Interleaved Boost Converter for PV Applications Carl N.M. Ho, Francisco Canales, Sami Pettersson, Gerardo Escobar, Antonio Coccia, and Nikolaos Oikonomou
More informationA SiC JFET Driver for a 5 kw, 150 khz Three-Phase Sinusoidal-Input, Sinusoidal-Output PWM Converter
A SiC JFET Driver for a 5 kw, 150 khz Three-Phase Sinusoidal-Input, Sinusoidal-Output PWM Converter S. Round, M. Heldwein, J. Kolar Power Electronic Systems Laboratory Swiss Federal Institute of Technology
More informationEfficiency improvement with silicon carbide based power modules
Efficiency improvement with silicon carbide based power modules Zhang Xi*, Daniel Domes*, Roland Rupp** * Infineon Technologies AG, Max-Planck-Straße 5, 59581 Warstein, Germany ** Infineon Technologies
More information600 V 10 A. IXRFFB60110 Silicon Carbide Full Wave Bridge Rectifier. Description. Figure 1 Functional Diagram
IXRFFB611 Features Silicon carbide Schottky diodes No reverse recovery for soft turn-off Temperature independent switching behavior Low leakage current Easy to mount, no insulators needed High power density
More informationPerformance Comparison of SiC Schottky Diodes and Silicon Ultra Fast Recovery Diodes
Performance Comparison of SiC Schottky Diodes and Silicon Ultra Fast Recovery Diodes Marek Adamowicz 1,2, Sebastian Giziewski 1, Jedrzej Pietryka 1, Zbigniew Krzeminski 1 1 Gdansk University of Technology
More informationPitch Pack Microsemi full SiC Power Modules
Pitch Pack Microsemi full SiC Power Modules October 2014 SiC Main Characteristics vs. Si Characteristics SiC vs. Si Results Benefits Breakdown field (MV/cm) Electron sat. velocity (cm/s) Bandgap energy
More informationSome Key Researches on SiC Device Technologies and their Predicted Advantages
18 POWER SEMICONDUCTORS www.mitsubishichips.com Some Key Researches on SiC Device Technologies and their Predicted Advantages SiC has proven to be a good candidate as a material for next generation power
More informationA Comparative Performance Study of an Interleaved Boost Converter using Commercialized Si and SiC Diodes for PV Applications
[WeD4-] 8th International Conference on Power Electronics - ECCE Asia May 3-June 3, 11, The Shilla Jeju, Korea A Comparative Performance Study of an Interleaved Boost Converter using Commercialized Si
More informationStudy of Static and Dynamic Characteristics of Silicon and Silicon Carbide Devices
Study of Static and Dynamic Characteristics of Silicon and Silicon Carbide Devices Sreenath S Dept. of Electrical & Electronics Engineering Manipal University Jaipur Jaipur, India P. Ganesan External Guide
More information(a) All-SiC 2-in-1 module
All-SiC -in- Module CHONABAYASHI, Mikiya * OTOMO, Yoshinori * KARASAWA, Tatsuya * A B S T R A C T Fuji Electric has developed an utilizing a SiC device that has been adopted in the development of a high-performance
More informationSwitching and conducting performance of SiC-JFET and ESBT against MOSFET and IGBT
Switching and conducting performance of SiC-JFET and ESBT against MOSFET and IGBT André Knop *, W.-Toke Franke * and Friedrich W. Fuchs * * University of Kiel, Institute of Power Electronics and Electrical
More informationWide Band-Gap Power Device
Wide Band-Gap Power Device 1 Contents Revisit silicon power MOSFETs Silicon limitation Silicon solution Wide Band-Gap material Characteristic of SiC Power Device Characteristic of GaN Power Device 2 1
More informationSiC Transistor Basics: FAQs
SiC Transistor Basics: FAQs Silicon Carbide (SiC) MOSFETs exhibit higher blocking voltage, lower on state resistance and higher thermal conductivity than their silicon counterparts. Oct. 9, 2013 Sam Davis
More informationLecture 23 Review of Emerging and Traditional Solid State Switches
Lecture 23 Review of Emerging and Traditional Solid State Switches 1 A. Solid State Switches 1. Circuit conditions and circuit controlled switches A. Silicon Diode B. Silicon Carbide Diodes 2. Control
More informationELG3336: Power Electronics Systems Objective To Realize and Design Various Power Supplies and Motor Drives!
ELG3336: Power Electronics Systems Objective To Realize and Design arious Power Supplies and Motor Drives! Power electronics refers to control and conversion of electrical power by power semiconductor
More informationModeling and Simulation of a 5.8kV SiC PiN Diode for Inductive Pulsed Plasma Thruster Applications
Modeling and Simulation of a 5.8kV SiC PiN Diode for Inductive Pulsed Plasma Thruster Applications Abstract Current ringing in an Inductive Pulsed Plasma Thruster (IPPT) can lead to reduced energy efficiency,
More informationPower Matters Microsemi SiC Products
Microsemi SiC Products James Kerr Director of Marketing Power Discrete Products Microsemi Power Products MOSFETs (100V-1200V) Highest Performance SiC MOSFETs 1200V MOSFETs FREDFETs (MOSFET with fast body
More information4. Power Electronics Research and Technology Development
FY 2006 Progress Report Power Electronics and Electric Machines 4. Power Electronics Research and Technology Development 4.1 Wide Bandgap Materials Principal Investigator: Burak Ozpineci Oak Ridge National
More informationDr.R.Seyezhai/ International Journal of Engineering Research and Applications (IJERA)
Dr.R.Seyezhai/ International Journal of Engineering Research and Applications (IJERA) Modeling and Simulation of Silicon Carbide (SiC) Based Bipolar Junction Transistor Dr.R.Seyezhai * *Associate Professor,
More informationA 42V Inverter/Rectifier for ISA using Discrete Semiconductor Components
A 42V Inverter/Rectifier for ISA using Discrete Semiconductor Components Anthony F. J. Murray, Peter Wood, Neeraj Keskar, Jingdong Chen & Alberto Guerra International Rectifier As presented at Future Transportation
More informationAN2649 Application note
Application note A power factor corrector with MDmesh TM II and SiC diode Introduction The electrical and thermal performances of switching converters are strongly influenced by the behavior of the switching
More informationSIC MOSFETS FOR FUTURE RESONANT CONVERTER APPLICATIONS
SIC MOSFETS FOR FUTURE RESONANT CONVERTER APPLICATIONS Av Subhadra Tiwari, NTNU, John Kåre Langelid, EFD Induction, Ole-Morten Midtgård, NTNU og Tore Marvin Undeland, NTNU Abstract Silicon carbide is a
More informationR a) Draw and explain VI characteristics of Si & Ge diode. (8M) b) Explain the operation of SCR & its characteristics (8M)
SET - 1 1. a) Define i) transient capacitance ii) Diffusion capacitance (4M) b) Explain Fermi level in intrinsic and extrinsic semiconductor (4M) c) Derive the expression for ripple factor of Half wave
More information(Original signatures are on file with official student records.)
To the Graduate Council: I am submitting herewith a dissertation written by Hui Zhang entitled Electro-Thermal Modeling of SiC Power Electronic Systems. I have examined the final electronics copy of this
More information1200 V SiC Super Junction Transistors operating at 250 C with extremely low energy losses for power conversion applications
1200 V SiC Super Junction Transistors operating at 250 C with extremely low energy losses for power conversion applications Ranbir Singh, Siddarth Sundaresan, Eric Lieser and Michael Digangi GeneSiC Semiconductor,
More informationSIC TECHNOLOGY, A WAY TO IMPROVE AEROSPACE INVERTER EFFICIENCY
27 TH INTERNATIONAL CONGRESS OF THE AERONAUTICAL SCIENCES SIC TECHNOLOGY, A WAY TO IMPROVE AEROSPACE INVERTER EFFICIENCY Sébastien VIEILLARD SAFRAN Hispano-Suiza Keywords: SiC, inverter, efficiency, IGBT
More informationInternational Journal on Emerging Technologies 1(2): 21-27(2010) ISSN : Silicon carbide GTO thyristor for HVDC converter
e t International Journal on Emerging Technologies 1(2): 21-27(2010) ISSN : 0975-8364 Silicon carbide GTO thyristor for HVDC converter Mangesh Shelke and R.K. Nema Deptt. of Electrical Engg. MANIT Bhopal
More informationAn Experimental Comparison of GaN E- HEMTs versus SiC MOSFETs over Different Operating Temperatures
An Experimental Comparison of GaN E- HEMTs versus SiC MOSFETs over Different Operating Temperatures Jianchun Xu, Yajie Qiu, Di Chen, Juncheng Lu, Ruoyu Hou, Peter Di Maso GaN Systems Inc. Ottawa, Canada
More informationAll-SiC Modules Equipped with SiC Trench Gate MOSFETs
All-SiC Modules Equipped with SiC Trench Gate MOSFETs NAKAZAWA, Masayoshi * DAICHO, Norihiro * TSUJI, Takashi * A B S T R A C T There are increasing expectations placed on products that utilize SiC modules
More informationDepartment of Electrical Engineering IIT Madras
Department of Electrical Engineering IIT Madras Sample Questions on Semiconductor Devices EE3 applicants who are interested to pursue their research in microelectronics devices area (fabrication and/or
More informationObjective Type Questions 1. Why pure semiconductors are insulators at 0 o K? 2. What is effect of temperature on barrier voltage? 3.
Objective Type Questions 1. Why pure semiconductors are insulators at 0 o K? 2. What is effect of temperature on barrier voltage? 3. What is difference between electron and hole? 4. Why electrons have
More informationComputational Model of Silicon Carbide JFET Power Device
Available online at www.sciencedirect.com Energy Procedia 16 (2012) 1994 2002 2012 International Conference on Future Energy, Environment, and Materials Computational Model of Silicon Carbide JFET Power
More informationTHE METAL-SEMICONDUCTOR CONTACT
THE METAL-SEMICONDUCTOR CONTACT PROBLEM 1 To calculate the theoretical barrier height, built-in potential barrier, and maximum electric field in a metal-semiconductor diode for zero applied bias. Consider
More informationSiC-JFET in half-bridge configuration parasitic turn-on at
SiC-JFET in half-bridge configuration parasitic turn-on at current commutation Daniel Heer, Infineon Technologies AG, Germany, Daniel.Heer@Infineon.com Dr. Reinhold Bayerer, Infineon Technologies AG, Germany,
More informationS.Tiwari, O.-M. Midtgård and T. M. Undeland Norwegian University of Science and Technology 7491 Trondheim, Norway
Experimental Performance Comparison of Six-Pack SiC MOSFET and Si IGBT Modules Paralleled in a Half-Bridge Configuration for High Temperature Applications S.Tiwari, O.-M. Midtgård and T. M. Undeland Norwegian
More informationWide Band-Gap (SiC and GaN) Devices Characteristics and Applications. Richard McMahon University of Cambridge
Wide Band-Gap (SiC and GaN) Devices Characteristics and Applications Richard McMahon University of Cambridge Wide band-gap power devices SiC : MOSFET JFET Schottky Diodes Unipolar BJT? Bipolar GaN : FET
More informationELEC-E8421 Components of Power Electronics
ELEC-E8421 Components of Power Electronics MOSFET 2015-10-04 Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) Vertical structure makes paralleling of many small MOSFETs on the chip easy. Very
More informationBasic Electronics Important questions
Basic Electronics Important questions B.E-2/4 Mech- B Faculty: P.Lakshmi Prasanna Note: Read the questions in the following order i. Assignment questions ii. Class test iii. Expected questions iv. Tutorials
More informationComparison of commutation transients of inverters with silicon carbide JFETs with and without body diodes.
NORPIE 1 Comparison of commutation transients of inverters with silicon carbide JFETs with and without body diodes. Björn Ållebrand and Hans-Peter Nee Abstract An inverter could be built by using silcon
More informationDesign and Characterization of a Three-Phase Multichip SiC JFET Module
Design and Characterization of a Three-Phase Multichip SiC JFET Module Fan Xu* fxu6@utk.edu Jing Wang* jwang50@utk.edu Dong Jiang* djiang4@utk.edu Fred Wang* fred.wang@utk.edu Leon Tolbert* tolbert@utk.edu
More informationV CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.95V. Symbol V GE I C I CM I LM I F I FM P D T L. R θ JA R θ JC
AOKBM V, A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest Alpha IGBT (α IGBT) technology V breakdown voltage Fast and soft recovery freewheeling diode High efficient
More informationModeling Power Converters using Hard Switched Silicon Carbide MOSFETs and Schottky Barrier Diodes
Modeling Power Converters using Hard Switched Silicon Carbide MOSFETs and Schottky Barrier Diodes Petros Alexakis, Olayiwola Alatise, Li Ran and Phillip Mawby School of Engineering, University of Warwick
More informationFundamentals of Power Semiconductor Devices
В. Jayant Baliga Fundamentals of Power Semiconductor Devices 4y Spri ringer Contents Preface vii Chapter 1 Introduction 1 1.1 Ideal and Typical Power Switching Waveforms 3 1.2 Ideal and Typical Power Device
More informationEPC2201 Power Electronic Devices Tutorial Sheet
EPC2201 Power Electronic Devices Tutorial heet 1. The ON state forward voltage drop of the controlled static switch in Figure 1 is 2V. Its forward leakage current in the state is 2mA. It is operated with
More informationPerformance Evaluation of GaN based PFC Boost Rectifiers
Performance Evaluation of GaN based PFC Boost Rectifiers Srinivas Harshal, Vijit Dubey Abstract - The power electronics industry is slowly moving towards wideband semiconductor devices such as SiC and
More informationAnalysis of circuit and operation for DC DC converter based on silicon carbide
omputer Applications in Electrical Engineering Vol. 14 2016 DOI 10.21008/j.1508-4248.2016.0024 Analysis of circuit and operation for D D converter based on silicon carbide Łukasz J. Niewiara, Tomasz Tarczewski
More informationA new compact power modules range for efficient solar inverters
A new compact power modules range for efficient solar inverters Serge Bontemps, Pierre-Laurent Doumergue Microsemi PPG power module Products, Chemin de Magret, F-33700 Merignac Abstract The decrease of
More informationImpulse Transformer Based Secondary-Side Self- Powered Gate-Driver for Wide-Range PWM Operation of SiC Power MOSFETs
Impulse Transformer Based Secondary-Side Self- Powered Gate-Driver for Wide-Range PWM Operation of SiC Power MOSFETs Jorge Garcia Dept of Electrical Engineering, University of Oviedo LEMUR Research Group
More informationModern Power Electronics Courses at UCF
Modern Power Electronics Courses at UCF Issa Batarseh, John Shen, and Sam Abdel-Rahman School of Electrical Engineering and Computer Science University of Central Florida Orlando, Florida, USA University
More informationAppendix: Power Loss Calculation
Appendix: Power Loss Calculation Current flow paths in a synchronous buck converter during on and off phases are illustrated in Fig. 1. It has to be noticed that following parameters are interrelated:
More informationProgress Energy Distinguished University Professor Jay Baliga. April 11, Acknowledgements
Progress Energy Distinguished University Professor Jay Baliga April 11, 2019 Acknowledgements 1 Outline SiC Power MOSFET Breakthroughs achieved at NCSU PRESiCE: SiC Power Device Manufacturing Technology
More informationV CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.6V. Symbol V GE I C I CM I LM I F I FM. t SC P D T L. R θ JA R θ JC
AOTB6M2 6V, A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest Alpha IGBT (α IGBT) technology 6V breakdown voltage Very fast and soft recovery freewheeling diode
More informationAn SOI-based High-Voltage, High-Temperature Gate-Driver for SiC FET
An SOI-based High-Voltage, High-Temperature Gate-Driver for SiC FET M. A Huque 1, R. Vijayaraghavan 1, M. Zhang 1, B. J. Blalock 1, L M. Tolbert 1,2, and S. K. Islam 1 1 Department of Electrical and Computer
More informationReferences. Advanced Industrial Electronics Resonant Power Converters
Advanced Industrial Electronics Resonant Power Converters References [1] Kazimierczuk M., Czarkowski D., Resonant power converters, John Wiley and Sons, Inc. 1995 [] Kazimierczuk M., Czarkowski D., Solutions
More informationA Comparison of a 5kW Full-Bridge Converter Using IGBT s and SiC BJT s
A Comparison of a 5kW Full-Bridge Converter Using IGBT s and SiC BJT s Master of Science Thesis NICLAS BERGMAN Department of Energy and Environment Division of Electric Power Engineering CHALMERS UNIVERSITY
More informationA 55-kW Three-Phase Inverter With Si IGBTs and SiC Schottky Diodes
278 IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, VOL. 45, NO. 1, JANUARY/FEBRUARY 2009 A 55-kW Three-Phase Inverter With Si IGBTs and SiC Schottky Diodes Burak Ozpineci, Senior Member, IEEE, Madhu Sudhan
More informationV CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.6V TO-220F C. Symbol V GE I C I CM I LM I F I FM. t SC P D T J, T STG T L.
AOTFB6M2 6V, A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest Alpha IGBT (α IGBT) technology 6V breakdown voltage Very fast and soft recovery freewheeling diode
More informationHigh frequency Soft Switching Half Bridge Series-Resonant DC-DC Converter Utilizing Gallium Nitride FETs
Downloaded from orbit.dtu.dk on: Jun 29, 2018 High frequency Soft Switching Half Bridge Series-Resonant DC-DC Converter Utilizing Gallium Nitride FETs Nour, Yasser; Knott, Arnold; Petersen, Lars Press
More informationLevel-2 On-board 3.3kW EV Battery Charging System
Level-2 On-board 3.3kW EV Battery Charging System Is your battery charger design performing at optimal efficiency? Datsen Davies Tharakan SYNOPSYS Inc. Contents Introduction... 2 EV Battery Charger Design...
More informationQRTECH AB, Mejerigatan 1, Gothenburg, Sweden
Materials Science Forum Online: 213-1-25 ISSN: 1662-9752, Vols. 74-742, pp 97-973 doi:1.428/www.scientific.net/msf.74-742.97 213 Trans Tech Publications, Switzerland 1 V, 3.3 m SiC bipolar junction transistor
More informationApplication Note AN-10B: Driving SiC Junction Transistors (SJT): Two-Level Gate Drive Concept
Application Note AN-10B: Driving SiC Junction Transistors (SJT): Two-Level Gate Drive Concept Introduction GeneSiC Semiconductor is commercializing 1200 V and 1700 V SiC Junction Transistors (SJTs) with
More informationIGBT Technologies and Applications Overview: How and When to Use an IGBT Vittorio Crisafulli, Apps Eng Manager. Public Information
IGBT Technologies and Applications Overview: How and When to Use an IGBT Vittorio Crisafulli, Apps Eng Manager Agenda Introduction Semiconductor Technology Overview Applications Overview: Welding Induction
More informationSi, SiC and GaN Power Devices: An Unbiased View on Key Performance Indicators
2016 IEEE Proceedings of the 62nd IEEE International Electron Devices Meeting (IEDM 2016), San Francisco, USA, December 3-7, 2016 Si, SiC and GaN Power Devices: An Unbiased View on Key Performance Indicators
More informationTO-263. I D,max = 5 Clamped Inductive Load. T VJ = 175 o C, I G = 0.25 A,
Normally OFF Silicon Carbide Junction Transistor Features 175 C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch Suitable for connecting an anti-parallel
More informationThe Nottingham eprints service makes this work by researchers of the University of Nottingham available open access under the following conditions.
Hussein, Abdallah and Castellazzi, Alberto and Wheeler, Patrick and Klumpner, Christian (2016) Performance benchmark of Si IGBTs vs. SiC MOSFETs in small-scale wind energy conversion systems. In: 17th
More informationV CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.95V. Symbol V GE I C I CM I LM. I F to 150 I FM P D T J, T STG T L
AOKBHAL V, A AlphaIGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (αigbt) Technology V Breakdown voltage Very fast and soft recovery freewheeling diode High
More informationV CE I C (T C =100 C) V CE(sat) (T J =25 C) Symbol V GE I C I CM I LM 6.6 I F 2.6 I FM. t SC P D T J, T STG T L. R θ JA R θ JC
AOD5B5N 5V, 5A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest Alpha IGBT (α IGBT) technology 5V breakdown voltage Very low turn-off switching loss with softness
More informationSilicon Carbide Technology Overview
Silicon Carbide Technology Overview MARCH 2017 www.richardsonrfpd.com richardsonrfpd.com Your Source for Silicon Carbide Power Products Deep Technical Expertise Silicon carbide (SiC) offers significant
More informationSascha Stegen School of Electrical Engineering, Griffith University, Australia
Sascha Stegen School of Electrical Engineering, Griffith University, Australia Electrical Machines and Drives Motors Generators Power Electronics and Drives Open-loop inverter-fed General arrangement of
More informationEXPERIMENT 5 : THE DIODE
EXPERIMENT 5 : THE DIODE Component List Resistors, one of each o 1 10 10W o 1 1k o 1 10k 4 1N4004 (I max = 1A, PIV = 400V) Diodes Center tap transformer (35.6V pp, 12.6 V RMS ) 100 F Electrolytic Capacitor
More informationPower Electronics Power semiconductor devices. Dr. Firas Obeidat
Power Electronics Power semiconductor devices Dr. Firas Obeidat 1 Table of contents 1 Introduction 2 Classifications of Power Switches 3 Power Diodes 4 Thyristors (SCRs) 5 The Triac 6 The Gate Turn-Off
More informationSIMULATION OF HIGH-EFFICIENCY INTERLEAVED STEP-UP DC-DC BOOST-FLYBACK CONVERTER TO USE IN PHOTOVOLTAIC SYSTEM
POZNAN UNIVE RSITY OF TE CHNOLOGY ACADE MIC JOURNALS No 79 Electrical Engineering 2014 Adam TOMASZUK* SIMULATION OF HIGH-EFFICIENCY INTERLEAVED STEP-UP DC-DC BOOST-FLYBACK CONVERTER TO USE IN PHOTOVOLTAIC
More informationHybrid Si-SiC Modules for High Frequency Industrial Applications
Hybrid Si-SiC Modules for High Frequency Industrial Applications ABSTRACT This presentation introduces a new family of 1200V IGBT modules that combine high switching frequency optimized silicon IGBTs with
More informationCHAPTER I INTRODUCTION
CHAPTER I INTRODUCTION High performance semiconductor devices with better voltage and current handling capability are required in different fields like power electronics, computer and automation. Since
More information10-PZ126PA080ME-M909F18Y. Maximum Ratings
flow3xphase-sic 12V/8mΩ Features SiC-Power MOSFET s and Schottky Diodes 3 phase inverter topology with split output Improved switching behavior (reduced turn on energy and X-conduction) Ultra Low Inductance
More informationC3M K. Silicon Carbide Power MOSFET C3M TM MOSFET Technology. N-Channel Enhancement Mode. Features. Package. Benefits.
C3M0030090K Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features Package V DS I D @ 25 C R DS(on) 900 V 63 A 30 mω C3M TM SiC MOSFET technology Optimized package with
More informationTRENCHSTOP 5 boosts efficiency in Home Appliance, Solar and Welding Applications
TRENCHSTOP 5 boosts efficiency in Home Appliance, Solar and Welding Applications Davide Chiola - Senior Mgr IGBT Application Engineering Mark Thomas Product Marketing Mgr Discrete IGBT Infineon Technologies
More informationNAME: Last First Signature
UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences EE 130: IC Devices Spring 2003 FINAL EXAMINATION NAME: Last First Signature STUDENT
More informationMDE10N026RH Single N-channel Trench MOSFET 100V, 120A, 2.6mΩ
General Description MDE1N26RH Single N-channel Trench MOSFET V, 12A, 2.6mΩ The MDE1N26 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching
More information3. PARALLELING TECHNIQUES. Chapter Three. high-power applications to achieve the desired output power with smaller size power
3. PARALLELING TECHNIQUES Chapter Three PARALLELING TECHNIQUES Paralleling of converter power modules is a well-known technique that is often used in high-power applications to achieve the desired output
More informationApplication Note AN-10A: Driving SiC Junction Transistors (SJT) with Off-the-Shelf Silicon IGBT Gate Drivers: Single-Level Drive Concept
Application Note AN-10A: Driving SiC Junction Transistors (SJT) with Off-the-Shelf Silicon IGBT Gate Drivers: Single-Level Drive Concept Introduction GeneSiC Semiconductor is commercializing 1200 V and
More informationC3D10065I Silicon Carbide Schottky Diode Z-Rec Rectifier
C3D65I Silicon Carbide Schottky Diode Z-Rec Rectifier Features 65-Volt Schottky Rectifier Ceramic Package Provides 2.5kV Isolation Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent
More informationPower of GaN. Enabling designers to create smaller, more efficient and higher-performing AC/DC power supplies
Power of GaN Enabling designers to create smaller, more efficient and higher-performing AC/DC power supplies Steve Tom Product Line Manager, GaN Products stom@ti.com Solving power and energy-management
More information4H-SiC V-Groove Trench MOSFETs with the Buried p + Regions
ELECTRONICS 4H-SiC V-Groove Trench MOSFETs with the Buried p + Regions Yu SAITOH*, Toru HIYOSHI, Keiji WADA, Takeyoshi MASUDA, Takashi TSUNO and Yasuki MIKAMURA ----------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
More informationC4D05120E Silicon Carbide Schottky Diode Z-Rec Rectifier
C4D12E Silicon Carbide Schottky Diode Z-Rec Rectifier Features 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast
More informationGaN in Practical Applications
in Practical Applications 1 CCM Totem Pole PFC 2 PFC: applications and topology Typical AC/DC PSU 85-265 V AC 400V DC for industrial, medical, PFC LLC 12, 24, 48V DC telecomm and server applications. PFC
More informationHigh voltage and large current dynamic test of SiC diodes and hybrid module
International Conference on Manufacturing Science and Engineering (ICMSE 2015) High voltage and large current dynamic test of SiC diodes and hybrid module Ao Liu 1, a *, Gang Chen1, 2, Song Bai1, 2, Run
More informationDesign of SiC MOSFET based High Efficiency Inverter for Solar PV Applications
International Journal of Applied Engineering Research ISSN 0973-456 Volume 13, Number 15 (018) pp. 183-188 Design of SiC MOSFET based High Efficiency Inverter for Solar PV Applications Monika Agarwal,
More information600 V, 1-40 A, Schottky Diodes in SiC and Their Applications
6 V, 1-4 A, Schottky Diodes in SiC and Their Applications Anant Agarwal, Ranbir Singh, Sei-Hyung Ryu, James Richmond, Craig Capell, Scott Schwab, Brice Moore and John Palmour Cree, Inc, 46 Silicon Dr.,
More informationGeneralized Multilevel Current-Source PWM Inverter with No-Isolated Switching Devices
Generalized Multilevel Current-Source PWM Inverter with No-Isolated Switching Devices Suroso* (Nagaoka University of Technology), and Toshihiko Noguchi (Shizuoka University) Abstract The paper proposes
More informationDesign of a High Efficiency 30 kw Boost Composite Converter
Design of a High Efficiency 30 kw Boost Composite Converter Hyeokjin Kim, Hua Chen, Dragan Maksimović and Robert Erickson Department of Electrical, Computer and Energy Engineering University of Colorado
More informationTable of Contents. iii
Table of Contents Subject Page Experiment 1: Diode Characteristics... 1 Experiment 2: Rectifier Circuits... 7 Experiment 3: Clipping and Clamping Circuits 17 Experiment 4: The Zener Diode 25 Experiment
More information