High Performance Schottky Generation 5.0, 10 A

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1 UT, WTFN UT Base cathode 4 3 Anode 2 Anode Cathode I-PAK (TO-25AA) Schottky Generation 5.0, A WTFN Base cathode 4 2 Cathode 3 Anode Anode D-PAK (TO-252AA) FEATURES 75 C high performance Schottky diode Very low forward voltage drop Extremely low reverse leakage Optimized V F vs. I R trade off for high efficiency Increased ruggedness for reverse avalanche capability RBSOA available Negligible switching losses Submicron trench technology Full lead (Pb)-free and RoHS compliant devices Qualified for AEC Q PRODUCT SUMMARY I F(AV) V RRM Maximum V F at 20 A at 25 C A 0 V 0.66 V APPLICATIONS High efficiency SMPS Automotive High frequency switching Output rectification Reverse battery protection Freewheeling Dc-to-dc systems Increased power density systems MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS V RRM 0 V V F Apk, T J = 25 C (typical) 0.65 V T J Range - 55 to 75 C VOLTAGE RATINGS PARAMETER SYMBOL TEST CONDITIONS UT WTFN UNITS Maximum DC reverse voltage V R T J = 25 C 0 V Document Number: For technical questions, contact: diodes-tech@vishay.com Revision: 08-Dec-08

2 UT, WTFN Schottky Generation 5.0, A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I F(AV) 50 % duty cycle at T C = 59 C, rectangular waveform A Maximum peak one cycle 5 µs sine or 3 µs rect. pulse Following any rated load 6 I FSM condition and with rated A non-repetitive surge current ms sine or 6 ms rect. pulse V RRM applied Non-repetitive avalanche energy E AS T J = 25 C, I AS = 3 A, L = 2 mh 54 mj Repetitive avalanche current I AR that T J < T J max. I AS at T J max. as a function of time pulse Limited by frequency of operation and time pulse duration so (see fig. 8) Note () Measured connecting 2 anode pins I AS at T J max. A ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS 5 A A T J = 25 C Forward voltage drop V ()(2) FM 20 A A V A T J = 25 C A T J = 25 C - 50 µa Reverse leakage current I () RM V R = Rated V R T J = 25 C - 4 ma Junction capacitance C T V R = 5 V DC (test signal range 0 khz to MHz), 25 C pf Series inductance L S Measured lead to lead 5 mm from package body nh Maximum voltage rate of change dv/dt Rated V R V/µs Notes () Pulse width < 300 µs, duty cycle < 2 % (2) Only anode pin connected THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage temperature range T J, T Stg - 55 to 75 C Maximum thermal resistance, junction to case R thjc DC operation 2 Typical thermal resistance, case to heatsink R thcs 0.3 C/W Approximate weight Marking device Case style I-PAK Case style D-PAK 0.3 g 0.0 oz. UT WTFN For technical questions, contact: diodes-tech@vishay.com Document Number: Revision: 08-Dec-08

3 UT, WTFN Schottky Generation 5.0, A 0 0 Instantaneous Forward Current - I F (A) Tj = 75 C Tj = 25 C Tj = 25 C Reverse Current - I R (ma) Junction Capacitance - C T (pf) C 50 C 25 C 0 C 75 C 50 C 25 C Reverse Voltage - V R (V) 00 0 Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Forward Voltage Drop - V FM (V) Fig. - Maximum Forward Voltage Drop Characteristics Reverse Voltage - V R (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Thermal Impedance ZthJC ( C/W) 0. D = 0.5 D = 0.33 D = 0.25 D = 0.2 D = 0.75 Single Pulse (Thermal Resistance) 0.0 E-05 E-04 E-03 E-02 E-0 E+00 t, Rectangular Pulse Duration (Seconds) Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics Document Number: For technical questions, contact: diodes-tech@vishay.com Revision: 08-Dec-08 3

4 UT, WTFN Schottky Generation 5.0, A Allowable Case Temperature ( C) DC 55 Square wave (D=0.50) 80% rated Vr applied 50 see note () Average Power Loss - (Watts) RMS Limit DC Average Forward Current - IF (AV) (A) Average Forward Current - IF (AV) (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Non-Repetitive Surge Current - IFSM(A) Square Wave Pulse Duration - t p (microsec) Fig. 7 - Maximum Non-Repetitive Surge Current Note () Formula used: T C = T J - (Pd + Pd REV ) x R thjc ; Pd = Forward power loss = I F(AV) x V FM at (I F(AV) /D) (see fig. 6); Pd REV = Inverse power loss = V R x I R ( - D); I R at V R = 80 % rated V R For technical questions, contact: diodes-tech@vishay.com Document Number: Revision: 08-Dec-08

5 UT, WTFN Schottky Generation 5.0, A 0 Avalanche Current (A) Tj = 25 C Tj = 75 C Tj = 25 C 0 Rectangular Pulse Duration ( μsec) Fig. 8 - Reverse Bias Safe Operating Area (Avalanche Current vs. Rectangular Pulse Duration) 0 Avalanche Energy (mj) Tj = 25 C Tj = 25 C Tj = 75 C 0 Rectangular Pulse Duration ( μsec) Fig. 9 - Reverse Bias Safe Operating Area (Avalanche Energy vs. Rectangular Pulse Duration) Document Number: For technical questions, contact: diodes-tech@vishay.com Revision: 08-Dec-08 5

6 UT, WTFN ORDERING INFORMATION TABLE Schottky Generation 5.0, A Device code U T FN TRL Current rating ( A) 2 - Package: U = I-PAK W = D-PAK 3 - T = Trench 4 - Voltage code (0 V) 5 - TO-252AA (D-PAK) 6 - D-PAK, I-PAK: None = Tube (75 pieces) D-PAK only: TR = Tape and reel TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) Dimensions Part marking information Packaging information SPICE model LINKS TO RELATED DOCUMENTS For technical questions, contact: diodes-tech@vishay.com Document Number: Revision: 08-Dec-08

7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: Revision: 8-Jul-08

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