Electronic Costing & Technology Experts

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1 Electronic Costing & Technology Experts 21 rue la Nouë Bras de Fer Nantes France Phone : +33 (0) June Version 1 - Written by Elena BARBARINI DISCLAIMER : System Plus Consulting provides cost studies based on its knowledge of the manufacturing and selling prices of electronic components and systems. The given values are realistic estimates which do not bind System Plus Consulting nor the manufacturers quoted in the report. System Plus Consulting is in no case responsible for the consequences related to the use which is made of the contents of this report. The quoted trademarks are property of their owners by SYSTEM PLUS CONSULTING, all rights reserved. 1

2 Glossary 1. Overview / Introduction 4 Executive Summary SiC Market trends Reverse Costing Methodology 2. Company Profile 9 3. Physical Analysis 12 Synthesis of the Physical Analysis Package analysis View and dimensions and marking Housing Base Plate Cross-Section DBC Cross-Section MOSFET Analysis Dimension Die Process Die Cross-Section SBD Diode Analysis Dimension Die process Die Cross-Section Comparison between planar and trench Rohm MOSFET 5. Cost Analysis 63 Synthesis of the Cost Analysis Main Steps of Economic Analysis Yields Explanation Cost Analysis MOSFET Wafer Cost Hypothesis MOSFET Wafer Cost Breakdown per process step MOSFET Probe Test Cost MOSFET Die cost Cost Analysis Diode Cost Analysis BSM180D12P3C007 Module DBC Assembly Cost BSM180D12P3C007 Module Cost 6. Comparison BSM180D12P3C007 and CAS120M12BM2 84 Module MOSFET Diode Cost 7. Estimated Manufacturer Price Analysis 89 Manufacturers ratios Estimated manufacturer Price 4. Manufacturing Process Flow 55 Overview MOSFET and Diode Process Flow Package Process Flow Description of the Wafer Fabrication Units 2016 by SYSTEM PLUS CONSULTING, all rights reserved. 2 Contact

3 This full reverse costing study has been conducted to provide insight on technology data, manufacturing cost and selling price of the ROHM BSM180D12P3C007. The BSM180D12P3C007 from ROHM is a new generation Trench SiC MOSFET high-voltage power module. With a breakdown voltage of 1200V for a current of 180A at 60 C, the module is optimized for: Motor drive Inverter, Converter Photovoltaics, wind power generation. Induction heating equipment. In comparison with the previous generation of SiC MOSFETs, which have a planar structure, the trench structure halves on-resistance and reduces switching losses by 42%. The BSM180D12P3C007 integrates the third generation high-voltage SiC power MOSFET dies with a current of 36A and the innovative trench structure. Ten SiC Schottky Barrier diodes are also integrated into the power module. The BSM180D12P3C007 offers an higher operating temperature (up to 150 C) in a 45mm x 122mm x 21mm package. A production cost analysis and overall comparison with the planar SiC MOSFET from Rohm and the Cree CAS120M12BM2 module is done in this report by SYSTEM PLUS CONSULTING, all rights reserved. 3

4 Datasheet extract 2016 by SYSTEM PLUS CONSULTING, all rights reserved. 4

5 The BSM180D12P3C007 power module is a half bridge configuration of 1200V 180A MOSFET. Package type: PBT GF30 Dimensions: 122mm x 45mm x 21mm Module Top View Module Back View Module Side View 2016 by SYSTEM PLUS CONSULTING, all rights reserved. 5

6 Package - Marking The package marking includes: <Rohm logo> BSM180D12P3C A00019R 2016 by SYSTEM PLUS CONSULTING, all rights reserved. 6

7 Screw terminals EconoPACK4 package outlines Pin terminals Screw terminals: 4 Pin terminals: 6 Connections outlines 2016 by SYSTEM PLUS CONSULTING, all rights reserved. 7

8 2016 by SYSTEM PLUS CONSULTING, all rights reserved. 8

9 2016 by SYSTEM PLUS CONSULTING, all rights reserved. 9

10 4.3 mm Return to TOC 3.0 mm Die dimensions: 12.9 mm² (3.0mm x 4.3mm) There is no marking on the die. MOSFET : Optical view 2016 by SYSTEM PLUS CONSULTING, all rights reserved. 10

11 Transistor after delayering Optical View Transistor after delayering Optical View 2016 by SYSTEM PLUS CONSULTING, all rights reserved. 11

12 2016 by SYSTEM PLUS CONSULTING, all rights reserved. 12

13 2016 by SYSTEM PLUS CONSULTING, all rights reserved. 13

14 2016 by SYSTEM PLUS CONSULTING, all rights reserved. 14

15 2016 by SYSTEM PLUS CONSULTING, all rights reserved. 15

16 3.0 mm Return to TOC 3.0 mm Die dimensions: 3mm x 3mm =9 mm² No die markings 2016 by SYSTEM PLUS CONSULTING, all rights reserved. 16

17 264 µm Die cross-section : SEM view 2016 by SYSTEM PLUS CONSULTING, all rights reserved. 17

18 Patent US A1 : Schottky barrier diode andmethod for making the same A schottky diode includes a SiC substrate which has a first surface and a second surface facing away from the first surface, a semiconductor layer which is formed on the first surface of the SiC substrate, a schottky electrode which is in contact with the semiconductor layer, and an ohmic electrode which is in contact with the second surface of the SiC substrate. The first surface of the SiC substrate is a (000-1) C surface, upon which the semiconductor layer is formed. Patent US A1 : Method for fabricating semiconductor device A semiconductor device provided with: a channel region formed in a surface of a semiconductor substrate in a predetermined depth range, a trench being formed in the surface as penetrating the channel region in a depthwise direction; a gate insulating film formed on an inside wall of the trench, the gate insulating film being in contact with the channel region; and a gate electrode including: a polysilicon layer opposing the channel region with the gate insulating film interposed therebetween, the polysilicon layer being embedded in an internal space of the trench at least in the predetermined depth range; and a lowresistance layer essentially formed from a metal element and disposed in the trench above the polysilicon layer that opposes the channel region. Fig. US A1 Rohm 2016 by SYSTEM PLUS CONSULTING, all rights reserved. 18 Fig. US A1 Rohm

19 2016 by SYSTEM PLUS CONSULTING, all rights reserved. 19

20 2016 by SYSTEM PLUS CONSULTING, all rights reserved. 20

21 2016 by SYSTEM PLUS CONSULTING, all rights reserved. 21

22 2016 by SYSTEM PLUS CONSULTING, all rights reserved. 22

23 2016 by SYSTEM PLUS CONSULTING, all rights reserved. 23

24 2016 by SYSTEM PLUS CONSULTING, all rights reserved. 24

25 Reverse costing analysis represents the best cost/price evaluation given the publically available data, and estimates completed by industry experts. Given the hypothesis presented in this analysis, the major sources of correction would lead to a +/- 10% correction on the manufacturing cost (if all parameters are cumulated). These results are open for discussion. We can reevaluate this circuit with your information. Please contact us: 2016 by SYSTEM PLUS CONSULTING, all rights reserved. 25

Electronic Costing & Technology Experts

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