Not for New Design. The replacement part is the A1120 next-generation chopper-stabilized switch.

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1 Not for New esign These parts are in production but have been determined to be NOT FOR NEW ESIGN. This classification indicates that sale of this device is currently restricted to existing customer applications. The device should not be purchased for new design applications because obsolescence in the near future is probable. Samples are no longer available. ate of status change: May 4, 29 Recommended Substitutions: The replacement part is the 2 next-generation chopper-stabilized switch. NOTE: For detailed information on purchasing options, contact your local llegro field applications engineer or sales representative. reserves the right to make, from time to time, revisions to the anticipated product life cycle plan for a product to accommodate changes in production capabilities, alternative product availabilities, or market demand. The information included herein is believed to be accurate and reliable. However, assumes no responsibility for its use; nor for any infringements of patents or other rights of third parties which may result from its use.

2 hopper-stabilized, Precision Hall-Effect Switch Features and enefits Resistant to Physical Stress Superior Temperature Stability Output Short-ircuit Protection Operation From Unregulated Supply Reverse attery Protection Sol id-state Reliability Small Size Packages: -pin SOT89 (LT package) Not to scale -pin SOT2W (LH package) -pin SIP (U package) escription The 24 Hall-effect switch is an extremely temperature-stable and stress-resistant sensor especially suited for operation over extended tem per a ture ranges to +5. Superior high-temperature per for mance is made possible through dynamic offset cancellation, which reduces the residual offset voltage normally caused by device overmolding, temperature dependencies, and thermal stress. The device includes on a single silicon chip a voltage regulator, Hall-voltage generator, small-signal amplifier, chopper sta bi li za tion, Schmitt trigger, and a short-circuit protected open-collector output to sink up to 25 m. south pole of sufficient strength will turn the output on. n on-board regulator permits operation with supply voltages of 4.2 to 24 volts. Three package styles provide a magnetically op ti mized pack age for most ap pli ca tions. Package type LH is a modified SOT2W surface-mount package, LT is a miniature SOT89/TO-24 transistor package for surface-mount applications; while U is a three-lead ultra-mini-sip for through-hole mounting. The LH and U packages are also available in a lead (Pb) free version (suffix, T), with a % matte tin plated leadframe. Functional lock iagram SUPPLY REG. TO LL SUIRUITS X YNMI OFFSET NELLTION SMPLE & HOL LOW-PSS FILTER ONTROL URRENT LIMIT OUTPUT < GROUN wg. FH h

3 Selection Guide Part Number Packing * Mounting 24ELHLT-T 7-in. reel, pieces/reel Surface Mount 24ELTTR-T 7-in. reel, pieces/reel Surface Mount 24EU-T ulk, 5 pieces/bag SIP through hole 24LLHLT-T 7-in. reel, pieces/reel Surface Mount 24LLTTR-T 7-in. reel, pieces/reel Surface Mount 24LU-T ulk, 5 pieces/bag SIP through hole *ontact llegro for additional packing options. mbient, T (º) 4 to 85 4 to 5 RP(MIN) (G) OP(MX) (G) 5. 5 bsolute Maximum Ratings haracteristic Symbol Notes Rating Unit Supply Voltage V 26.5 V Reverse attery Voltage V R V Output Off Voltage V OUT 26 V Internal current limiting is intended to protect the ontinuous Output urrent I OUT device from output short circuits. 25 m Reverse Output urrent I ROUT 5 m Package Power issipation P See graph W Magnetic Flux ensity G =. mt (millitesla) Unlimited G Operating mbient Temperature T Range E 4 to 85 º Range L 4 to 5 º Maximum Junction Temperature T J (max) 65 º Storage Temperature T stg 65 to 7 º 2

4 Suffix LT & U Pinning (SOT89/TO-24 & ultra-min SIP) Suffix LH Pinning (SOT2W) X PTT PTT V V 2 2 SUPPLY GROUN OUTPUT wg. PH--4 wg. PH--2 Pinning is shown viewed from branded side. Package Power issipation Suffix " U" R θj = 65 /W 5 4 Suffix " LH" R θj = 228 /W Suffix " LT" R θj = 8 /W 2 Suffix "E " Suffix "L " MIENT TEMPERTURE in wg. GH-46-2 opyright 2, 2

5 ELETRIL HRTERISTIS over operating temperature range. Limits haracteristic Symbol Test onditions Min. Typ. Max. Units Supply Voltage Range V Operating, T J < V Output Leakage urrent I OFF V OUT = 24 V, < RP μ Output Saturation Voltage V OUT(ST) I OUT = 2 m, > OP 85 5 mv Output urrent Limit I OM > OP 6 m Power-On Time t po V > 4.2 V 5 μs hopping Frequency f 4 khz Output Rise Time t r R L = 82, L = 2 pf.2 2. μs Output Fall Time t f R L = 82, L = 2 pf. 2. μs Supply urrent I < RP, V = 2 V. 6. m > OP, V = 2 V m Reverse attery urrent I V R = - V -5. m Zener Voltage V Z + V I = 5 m, T = V Zener Impedance z z + z I = 5 m, T = 25 5 NOTES:. Maximum voltage must be adjusted for power dissipation and junction temperature. 2. OP = operate point (output turns on); RP = release point (output turns off).. Typical ata is at T = +25 and V = 2 V and is for design information only. MGNETI HRTERISTIS over operating supply voltage and temperature ranges. Limits haracteristic Symbol Test onditions Min. Typ. Max. Units Operate Point OP 5 5 G Release Point RP G Hysteresis hys OP - RP G NOTES:. Typical ata is at T = +25 and V = 2 V and is for design information only. 2. gauss (G) is exactly equal to. millitesla (mt). 4

6 TYPIL OPERTING HRTERISTIS as a function of temperature 5 SWITH POINTS 4 SWITH POINTS IN GUSS 2 V = 4.5 V V = 24 V OPERTE POINT RELESE POINT MIENT TEMPERTURE IN wg. GH-26-5 OUTPUT STURTION VOLTGE 6. SUPPLY URRENT STURTION VOLTGE IN mv 2 IOUT = 2 m V = 2 V SUPPLY URRENT IN m OUTPUT OFF, < RP V = 2 V OUTPUT ON, > OP MIENT TEMPERTURE IN MIENT TEMPERTURE IN 25 5 wg. GH-29-4 wg. GH

7 TYPIL OPERTING HRTERISTIS as a function of supply voltage 4 SWITH POINTS OPERTE POINT SWITH POINT IN GUSS 2 RELESE POINT T = 5 T = SUPPLY VOLTGE IN VOLTS wg. GH-2-2 OUTPUT STURTION VOLTGE SUPPLY URRENT 25 IOUT = 2 m T = 5 T = +25 T = OUTPUT ON T = 5 T = +25 T = -4 STURTION VOLTGE IN mv SUPPLY URRENT IN m SUPPLY VOLTGE IN VOLTS wg. GH-55- SUPPLY VOLTGE IN VOLTS wg. GH

8 FUNTIONL ESRIPTION hopper-stabilized Technique. The Hall element can be considered as a resistor array similar to a Wheatstone bridge. large portion of the offset is a result of the mismatching of these resistors. These devices use a proprietary dynamic offset cancellation technique, with an internal high-frequency clock to reduce the residual offset voltage of the Hall element that is normally caused by device overmolding, temperature de pen den cies, and thermal stress. The chopper-stabilizing technique cancels the mismatching of the resistor circuit by changing the direction of the current flowing through the Hall plate using MOS switches and Hall voltage measurement taps, while maintaing the Hallvoltage signal that is induced by the external magnetic flux. The signal is then captured by a sample-and-hold circuit and further processed using low-offset bipolar circuitry. This technique produces devices that have an extremely stable quiescent Hall output voltage, are immune to thermal stress, and have precise recoverability after temperature cycling. This technique will also slightly degrade the device output repeatability. relatively high sampling frequency is used in order that faster signals can be processed. More detailed descriptions of the circuit operation can be found in: Technical Paper STP 97-, Monolithic Magnetic Hall Sensor Using ynamic Quadrature Offset ancellation and Technical Paper STP 99-, hopper-stabilized mplifiers With Track-and-Hold Signal emodulator. Operation. The output of these devices switch es low (turns on) when a magnetic field (south pole) perpendicular to the Hall sensor exceeds the operate point threshold ( OP ). fter turn-on, the output is capable of sinking 25 m and the output voltage is V OUT(ST). When the magnetic field is reduced below the release point ( RP ), the device output goes high (turns off). The dif ference in the magnetic operate and release points is the hysteresis ( hys ) of the device. This built-in hysteresis allows clean switching of the output even in the presence of external mechanical vibration and electrical noise. pplications. It is strongly recommended that an external bypass capacitor be con nect ed (in close proximity to the Hall sensor) between the supply and ground of the device to reduce both external noise and noise generated by the chopper-sta bi li zation technique. The sim plest form of magnet that will op er ate these devices is a ring magnet. Oth er meth ods of operation, such as linear magnets, are possible. Extensive ap pli ca tions in for ma tion on magnets and Hall-effect sensors is also available in pplication Note 277, or at OUTPUT VOLTGE +V +V PTT V REG HLL VOLTGE + wg. H--2 RP X FLUX ENSITY 2 OP. F V OUT(ST) SUPPLY SMPLE & HOL wg. EH-2 + wg. GH-7-2 OUTPUT X V SUPPLY wg. EH- 7

9 Package LH, -Pin (SOT-2W) MIN REF.25 S Seating Plane Gauge Plane.95 P Layout Reference View 8X REF randed Face. ±. NNT.95 S ctive rea epth,.28 mm REF.4 ± For Reference Only; not for tooling use (reference dwg. 8284) imensions in millimeters imensions exclusive of mold flash, gate burrs, and dambar protrusions Exact case and lead configuration at supplier discretion within limits shown Standard randing Reference View N = Last two digits of device part number T = Temperature code Reference land pattern layout ll pads a minimum of.2 mm from all adjacent pads; adjust as necessary to meet application process requirements and P layout tolerances randing scale and appearance at supplier discretion Hall element, not to scale 8

10 Package LT, -Pin (SOT89/TO-24) 4.5± Parting Line ±.6 2.5±. 2X.5 S P Layout Reference View asic pads for low-stress, not self-aligning dditional pad for low-stress, self-aligning dditional area for IP reference layout.5±.6 For Reference Only; not for tooling use (reference JEE. TO-24) imensions in millimeters imensions exclusive of mold flash, gate burrs, and dambar protrusions Exact case and lead configuration at supplier discretion within limits shown ctive rea epth,.78 mm REF Reference land pattern layout (reference IP75 SOT89N); ll pads a minimum of.2 mm from all adjacent pads; adjust as necessary to meet application process requirements and P layout tolerances randing scale and appearance at supplier discretion Hall element, not to scale NNT Standard randing Reference View = Supplier emblem N = Last two digits of device part number T = Temperature code 9

11 Package U, -Pin SIP E ± MX.5 REF 2.45 E E randed Face.79 REF 45 Mold Ejector Pin Indent NNT Standard randing Reference View = Supplier emblem N = Last two digits of device part number T = Temperature code 5.75 ± For Reference Only; not for tooling use (reference WG-949) imensions in millimeters imensions exclusive of mold flash, gate burrs, and dambar protrusions Exact case and lead configuration at supplier discretion within limits shown E ambar removal protrusion (6X) Gate burr area ctive rea epth,.5 mm REF randing scale and appearance at supplier discretion Hall element, not to scale NOM opyright 2-28, The products described herein are manufactured under one or more of the following U.S. patents: 5,45,92; 5,264,78; 5,442,28; 5,89,889; 5,58,79; 5,57,2; 5,69,7; 5,62,9; 5,65,79; 5,686,894; 5,694,8; 5,729,; 5,97,2; and other patents pending. reserves the right to make, from time to time, such de par tures from the detail spec i fi ca tions as may be required to permit improvements in the per for mance, reliability, or manufacturability of its products. efore placing an order, the user is cautioned to verify that the information being relied upon is current. llegro s products are not to be used in life support devices or systems, if a failure of an llegro product can reasonably be expected to cause the failure of that life support device or system, or to affect the safety or effectiveness of that device or system. The in for ma tion in clud ed herein is believed to be ac cu rate and reliable. How ev er, assumes no responsibility for its use; nor for any in fringe ment of patents or other rights of third parties which may result from its use. For the latest version of this document, visit our website:

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