RT1001. Low Power Human Body Temperature Monitoring Solution with Built-in Temperature Sensor and 2.4GHz RF. General Description.

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1 Low Power Human Body Temperature Monitoring Solution with Built-in Temperature Sensor and.4ghz RF General Description The is an integrated SOC solution for human body temperature monitoring system. The integrate low power 3-bit MCU, 8-bit ADC, built-in high resolution temperature sensor and.4ghz ISM Band RF transceiver. The support coin type battery for small form factor and can achieve longer usage time by its low power consumption. The solution need only few discrete components and is easy to use for human body temperature monitoring application. The is available in a WQFN-3L 5x5 package. Applications Human Body Temperature Monitoring Wearable Devices Ordering Information - Note : Richtek products are : RoHS compliant and compatible with the current requirements of IPC/JEDEC J-STD-00. Suitable for use in SnPb or Pb-free soldering processes. Marking Information GQWYMDNN AAA Application Code Package Type QW : WQFN-3L 5x5 (W-Type) Operating Temperature Range G : Green (Halogen Free with Commercial Standard) GQW : Product Number YMDNN : Date Code AAA : Application Code (If AAA is 000, it will not mark) Features Low Power 3-bit MCU Up to 8-bit High Resolution ADC ADC Channel can be Configured 6 Single-Ended or 3 Differential Input Channels 0.0 C Temperature Resolution High Accuracy Human Body Temperature Sensing by External NTC ±0.05 C from 35 C to 40 C High Accuracy Internal Temperature Sensor ±0.05 C from 35 C to 40 C ± C from 40 C to 5 C Integrate.4GHz RF Transceiver 50μA in Active Mode 3μA in Shutdown Mode 30Days Continuously Work by CR60 Battery Battery Voltage Measurement Range from 0 to 4.5V, Accuracy ±.5mV MCU Shutdown Current.μA Up to 0 GPIOs and Support I C Master/Slave and SPI Master Interface Small 3-Lead WQFN Package High Integration and Few Discrete BOM Pin Configuration XTALO XTALI VDD_RF 3 ANTb 4 GND_RF 5 ANT 6 GND_RF 7 VDD33_RF 8 NC VDD8_RF (TOP VIEW) NC VINN VINP VINN RESET DIO0_0 DIO0_ DIO_0 DIO_ VINP DIO_ VPTS DIO_ NC 3 AGND VBATS GND VDD8 0 DIO_3/SPI_SS 9 DIO_/SPI_CLK 33 8 DIO_/SPI_MO 7 DIO_0/SPI_MI WQFN-3L 5x5

2 Functional Pin Description Pin No. Pin Name Pin Function XTALO External crystal pin. XTALI External crystal pin. 3 VDD_RF Need to connect to VDD8_RF pin. 4 ANTb RF input signal during RX and RF output signal during TX. 5, 7 GND_RF Ground for RF transceiver. 6 ANT RF input signal during RX and RF output signal during TX. 8 VDD33_RF Power supply input for RF transceiver. 9, 4, 3 NC No internal connection. 0 RESET Set low to reset MCU. DIO0_0 IO pin, INT0 and SPI slave selected (SPI_SS) multi-function. DIO0_ IO pin, INT and SPI slave 3 selected (SPI_SS3) multi-function. 3 DIO_0 IO pin and I C slave SCL and I C0 master SCL multi-function. 4 DIO_ IO pin and I C slave SDA and I C0 master SDA multi-function. 5 DIO_ IO pin and I C master SCL multi-function. 6 DIO_3 IO pin and I C master SDA multi-function DIO_0 / SPI_MI DIO_ / SPI_MO DIO_ / SPI_CLK DIO_3 / SPI_SS VDD8 LDO output. IO pin and SPI master data input (SPI_MI) multi-function. IO pin and SPI master data output (SPI_MO) multi-function. IO pin and SPI clock (SPI_CLK) and ADC3 positive input (VINP3) multi-function. IO pin and SPI slave selected (SPI_SS) and ADC3 negative input (VINN3) multi-function. VBATS Battery voltage sensing input. 3, 3 AGND Ground. 5 Power supply input for MCU. 6 VPTS Power reference pin for NTC measurement. 7 VINP ADC positive input for NTC measurement. 8 VINN ADC negative input for NTC measurement. 9 VINP ADC positive input. 30 VINN ADC negative input. 3 VDD8_RF RF LDO output, need to connect to VDD_RF pin. 33 (Exposed pad) GND Ground. The exposed pad must be soldered to a large PCB and connected to GND for maximum thermal dissipation.

3 Typical Application Circuit Using NTC for Temperature Sensing MHz Crystal Antenna RTS NTC 6 ANT 4 ANTb XTALO XTALI 6 VPTS 7 VINP 8 VINN 8 VDD33_RF 5 GND_RF 5, 7 GND INT0 VBATS 3 VDD_RF 3 VDD8_RF VDD8 33 3, 33 (Exposed pad) Button VDD Coin Type Battery CR60 C µf C3 4.7µF *Note C 33µF Using Internal Temperature Sensor MHz Crystal Antenna 6 ANT 4 ANTb XTALO XTALI 8 VDD33_RF 5 GND_RF 5, 7 GND INT0 VBATS 3 VDD_RF 3 VDD8_RF VDD8 33 3, 33 (Exposed pad) Button VDD Coin Type Battery CR60 C µf C3 4.7µF *Note C 33µF 3

4 Using NTC and Sensor Antenna Sensor VDD MHz Crystal RTS NTC 6 ANT 4 ANTb XTALO XTALI 3 IC0_SCL 4 IC0_SDA INT 6 VPTS 7 VINP 8 VINN 8 VDD33_RF 5 GND_RF INT0 VBATS 3 VDD_RF 3 VDD8_RF 5, 7 VDD8 GND 33 Button 3, 33 (Exposed pad) VDD Coin Type Battery CR60 C µf C3 4.7µF *Note C 33µF * Suggest 33μF capacitor in VDD33_RF power for TX in short period and battery voltage above.5v condition. The real voltage drop when RF active will depend on battery condition. 4

5 Functional Block Diagram ANT XTALO SPI / I C IRQ I/O 3-bit MCU.4GHz RF XTALI VDD33_RF VPTS VINP VINN 8-bit ADC Memory Internal Temperature Sensor VBATS GND Operation 3-bit MCU Use embedded microcontroller for temperature sensing and RF handling. Internal Temperature Sensor Integrate high resolution temperature sensor..4ghz RF Broadcast the human body temperature data by.4ghz RF. NTC and RTS External NTC thermistor and RTS is used for human body temperature sensing. The reference NTC thermistor is MEB-503F3950L87. If using built-in temperature sensor, the NTC and RTS is not necessary. Coin Type Battery The reference coin type battery CR60 is used to supply system power. 5

6 Absolute Maximum Ratings (Note ) Supply Voltage, V to 5.5V Supply Voltage, VDD V to.98v Supply Voltage, VDD33_RF V to 3.7V VDD8_RF, VDD_RF V to.5v ANT, ANTb, XTALO, XTALI V to 3.7V ANT, ANTb Input Power dBm Other Pins V to 5.5V Power Dissipation, P T A = 5 C WQFN-3L 5x W Package Thermal Resistance (Note ) WQFN-3L 5x5, θ JA C/W WQFN-3L 5x5, θ JC C/W Junction Temperature C Lead Temperature (Soldering, 0sec.) C Storage Temperature Range C to 50 C ESD Susceptibility (Note 3) HBM (Human Body Model) kv Recommended Operating Conditions (Note 4) Supply Input Voltage, V to 4.5V Supply Input Voltage, VDD33_RF V to 3.6V Junction Temperature Range C to 5 C Ambient Temperature Range C to 85 C Electrical Characteristics ( = 3V,.4GHz proprietary RF transceiver, TA = 5 C, unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Supply Voltage TA = 40 C to 85 C V VDD8 Supply Voltage VDD8 TA = 40 C to 85 C V VDD33_RF Operation Range Active Mode Current RF work every sec (average current) V A MCU Shutdown Current Only for MCU shutdown current A Supply Current at VDD33_RF IDD_TXH IDD_RX TX mode POUT = dbm, VDD33_RF = 3.3V RX mode VDD33_RF = 3.3V Only for RF shutdown current VDD33_RF = 3.3V ma ma A 6

7 ADC Parameter Symbol Test Conditions Min Typ Max Unit Resolution (6-bit-mode) ADC_BIT bit Resolution (8-bit-mode) ADC_BIT bit Reference Voltage By VPTS pin.4..6 V Input Resistance of VINP, VINN, VINP, VINN When ADC conversion M Input Resistance of VBATS When ADC channel set to VBATS k Internal Temperature Sense Internal Temperature Measurement Error Internal Temperature Measurement Error IntTGERR TA = 35 to 40 C (Note 5) -- ± C IntTGERR TA = 40 to 5 C (Note 5) -- ± -- C External Temperature Sense (From VINP/VINN, VINP/VINN and VINP3/VINN3 Input) External Temperature Measurement Error ExtTGERR Voltage Sense (From VBATS Input) Voltage Measurement Range (Note 6) By NTC, Measurement range from 30 C to 45 C mv mv Voltage Measurement Error VGERR TA = 5 C, VBATS = 3V -- ±.5 -- mv RF Transmitter Maximum Output Power PMAX (Note 7) dbm Minimum Output Power PMIN (Note 7) dbm RF Receiver Sensitivity, 6.5Kbps Sensitivity, Mbps Others DIO Input Logic-High VIH MHz crystal, BER 0.% (Note 8) MHz crystal, BER 0.% (Note 8) dbm dbm 0.7 x Input Logic-Low VIL Output Logic-High, Push-Pull VOH IOH = 5mA V 0.3 x V V Output Logic-Low, Push-Pull VOL IOL = 5mA V I C Input Logic-High 0.7 x V 7

8 Parameter Symbol Test Conditions Min Typ Max Unit Input Logic-Low x Output Logic-Low VODL ISINK = 5mA V SCL Clock Rate fscl khz SPI Input Logic-High 0.7 x Input Logic-Low Output Logic-High x Note. Stresses beyond those listed Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions may affect device reliability. Note. θ JA is measured under natural convection (still air) at T A = 5 C with the component mounted on a high effectivethermal-conductivity four-layer test board on a JEDEC 5-7 thermal measurement standard. θ JC is measured at the exposed pad of the package. The copper area is 70mm connected with IC exposed pad. Note 3. Devices are ESD sensitive. Handling precaution is recommended. Note 4. The device is not guaranteed to function outside its operating conditions. Note 5. Measured on the evaluated PCB in closed chamber with constant temperature and assuming only -point calibration at 5 C. The typical value depends on PCB size and air-flow condition. Note 6. Use VPTS reference voltage and NTC MEB-503F3950 (Ω at 37 C) and series RTS Ω (TC < ±00ppm) resistor for this operating conditions. Note 7. Measured on the evaluated PCB, delivered to a single-ended 50Ω load. The typical value is just for reference and the real result will be different depend on different environment. Note 8. Use MHz ±0ppm crystal.and measured on the evaluated PCB. The typical value is just for reference and the real result will be different depend on different environment. V V V Output Logic-Low V SPI Clock Rate fspi MHz RESET Input Logic-High VIH_RESET 0.7 x Input Logic-Low VIL_RESET V 0.3 x V 8

9 Application Information External Temperature Sensing RTS NTC VPTS VINP VINN The human body temperature sensing application need to refer to the application circuit and please follow the suggested component spec, assuming a -point calibration at 37 C. RTS : Low temperature coefficient resistance. Ω ±0.%, TC ±50ppm/ C NTC : SHANGHAI BENMU MEB-503F3950L87, 30K@37 C, ±0.6% Error ( C) NTC temperature error in human body temperature range Temperature ( C) Internal Temperature Sensing Typical internal temperature sensor error is ± C assuming only -point calibration at 5 C. Measured on the evaluated PCB in closed chamber with constant temperature. The typical value depends on PCB size and air-flow condition. Error ( C) RF Transceiver The integrate.4ghz RF transceiver and it can operate in ISM frequency band from 400MHz to 48MHz. The maximum output power is typical 4dBm. It also needs MHz crystal within 0ppm tolerance for RF transceiver to operate normally. MHz Crystal Antenna ANT ANTb XTALO XTALI.4GHz RF 3-bit MCU.4GHz RF Function Block Power on sequence of.4ghz RF. Supply power to and VDD33_RF. Enable.4GHz RF 3. Wait 5ms for clock stable 4. Initialize registers Internal temperature error Temperature ( C) 9

10 & VDD33_RF power up Enable.4GHz RF Wait 5ms for clock stable Initialize registers Initialize.4GHz RF Flow When RF transceiver enter sleep mode, the power consumption of RF transceiver can down to 6μA (typ.). We can access.4ghz RF register to wake up RF and need 5ms for clock stable before control RF transceiver. Sleep sequence of.4ghz RF Wakeup sequence of.4ghz RF. Access.4GHz RF register to wake up. Wait 5ms for clock stable 3. Normal read / write registers. Write.4GHz RF SLEEP_MODE register to enter Sleep Mode. Don't access.4ghz RF to keep in Sleep Mode RF transceiver in sleep mode Access.4GHz RF register to wake up Wait 5ms for clock stable Normal read / write registers.4ghz RF Wakeup Flow.4GHz RF Packet Format Preamble SYNC Trailer Payload CRC Packet Format. Preamble is to 8 bytes, it is programmable.. SYNC is optional for 6, 3, 48, 64 bits, it is programmable for device syncword. The syncword of TX/RX devices need to match. 3. Trailer is 4 to 8 bits. It is programmable. 4. Payload is TX/RX data. There are 4 data types can be set : Raw data Coin type battery voltage drop when.4ghz RF active When using coin type battery, the voltage drop could be large without external capacitor to support short period.4ghz RF function. Suggest 33μF capacitor in VDD33_RF power for TX in short period of time and battery voltage above.5v condition. The real voltage drop when RF active will depend on battery internal resistance condition. The suggested 33μF capacitor can save voltage drop in short period of time. 8 bit/0 bit line code Manchester Interleave with FEC option 5. CRC is 6 bits and is optional. 0

11 MHz Crystal Antenna RTS NTC ANT VDD33_RF ANTb INT0 XTALO VBATS XTALI VPTS VDD_RF VDD8_RF VINP VDD8 VINN GND_RF GND 33 Button VDD C µf C3 4.7µF C 33µF Coin Type Battery CR60 Suggest Solution for Voltage Drop when.4ghz RF Active SPI Interface The integrate 4 dedicated slave selected signal for 4 SPI channels and can be used to access 4 slave devices. The other SPI signals including SPI clock, SPI master data input and SPI master data output signal are shared and need to set register to switch SPI channel. SPI slave 0 selected is used for RF transceiver. SPI Master SPI_MI SPI_MO SPI_CLK SPI_SS3 SPI_SS SPI_SS SO SI CK SS3 SO SI CK SS SPI Slave3 SPI Slave SO SI CK SS SPI Slave

12 I C Interface The I C slave address = 7' b0000. I C interface support fast mode (bit rate up to 400kb/s). The write or read bit stream is shown below : Read data Slave Address Register Address Slave Address MSB Data LSB S 0 A A Sr R/W Assume Address = m A Data for Address = m A MSB Data LSB A Data for Address = m + P Write data Slave Address Register Address MSB Data LSB MSB Data LSB S 0 A A A A P R/W Assume Address = m Data for Address = m Data for Address = m + Driven by Master, Driven by Slave, P Stop, S Start, Sr Repeat Start Thermal Considerations The junction temperature should never exceed the absolute maximum junction temperature T J(MAX), listed under Absolute Maximum Ratings, to avoid permanent damage to the device. The maximum allowable power dissipation depends on the thermal resistance of the IC package, the PCB layout, the rate of surrounding airflow, and the difference between the junction and ambient temperatures. The maximum power dissipation can be calculated using the following formula : P D(MAX) = (T J(MAX) T A ) / θ JA where T J(MAX) is the maximum junction temperature, T A is the ambient temperature, and θ JA is the junction-to-ambient thermal resistance. For continuous operation, the maximum operating junction temperature indicated under Recommended Operating Conditions is 5 C. The junction-to-ambient thermal resistance, θ JA, is highly package dependent. For a WQFN-3L 5x5 package, the thermal resistance, θ JA, is 7.5 C/W on a standard JEDEC 5-7 high effective-thermalconductivity four-layer test board. The maximum power dissipation at T A = 5 C can be calculated as below : The maximum power dissipation depends on the operating ambient temperature for the fixed T J(MAX) and the thermal resistance, θ JA. The derating curves in Figure allows the designer to see the effect of rising ambient temperature on the maximum power dissipation. Maximum Power Dissipation (W) 4.0 Four-Layer PCB Ambient Temperature ( C) Figure. Derating Curve of Maximum Power Dissipation P D(MAX) = (5 C 5 C) / (7.5 C/W) = 3.63W for a WQFN-3L 5x5 package.

13 Layout Consideration. MHz Crystal should put close to the and the trace to XTALI and XTALO need to keep short. GND pin connect to GND plane 3. VDD8_RF and VDD33_RF trace keep0mil or wider 4. ANTb connect to GND plane 5. ANT trace is 50Ω impedance 6. Keep no other metal in antenna zone PCB Antenna 6 GND 3 VDD8_RF µf C MHz Crystal µf C Legend 33µF C 3 VDD33_RF Trace VIA PAD Figure. PCB Layout Guide 3

14 Outline Dimension D D SEE DETAIL A L E E e b A A A3 DETAIL A Pin # ID and Tie Bar Mark Options Note : The configuration of the Pin # identifier is optional, but must be located within the zone indicated. Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A A A b D D E E e L W-Type 3L QFN 5x5 Package 4

15 Footprint Information Package Number of Pin Footprint Dimension (mm) P Ax Ay Bx By C D Sx Sy Tolerance V/W/U/XQFN5* ±0.05 Richtek Technology Corporation 4F, No. 8, Tai Yuen st Street, Chupei City Hsinchu, Taiwan, R.O.C. Tel: (8863) Richtek products are sold by description only. Richtek reserves the right to change the circuitry and/or specifications without notice at any time. Customers should obtain the latest relevant information and data sheets before placing orders and should verify that such information is current and complete. Richtek cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Richtek product. Information furnished by Richtek is believed to be accurate and reliable. However, no responsibility is assumed by Richtek or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Richtek or its subsidiaries. 5