Semiconductor Technology Academic Research Center An RTL-to-GDS2 Design Methodology for Advanced System LSI

Transcription

1 Semiconductor Technology Academic Research Center An RTL-to-GDS2 Design Methodology for Advanced System LSI Jan Nobuyuki Nishiguchi Semiconductor Technology Advanced Research Center (STARC) ASP-DAC 2011 Copyright(C) 2011 STARC All Rights Reserved.

2 Contributing to a Bigger Application Ecosystem What system LSI do we make? How do we design easily? Common Design Technology Infrastructure Design Methodology What design steps are required? What kind of data and design constraints must be created? What kind of design information must be verified? What kind of information must be passed to next design stage? How can manufacturability be assured at the design stage? How variations must be taken care? 1

3 Target System LSI and Design Technology 8MG/10Mbits/1GHz CORE Cache CPU-A CORE Cache 4MG/5Mbits/500M Hz CPU-B BUS Controller CORE Cache System Interconnect 10MG/50Mbits/125M Hz Modem 2G/2.5G 3G/3.5G 3.9G 4MG/250MHz Peripheral System Multimedia Processing Engine I2C GPIO Manager CLKGEN 2D/3DGraphics SDIF Camera Accelerator USB UART RSTC DSP AV-Codec GPS IrDA PMU Engine SIO Security WDT Display etc Timer Controller 5MG/10Mbits/125 etc MHz ANALOG 1MG/5Mbits/125 12MG/40Mbits/250MH PLL MHz z External Memory Controller AD/DA etc Target System LSI (44Mgates, 1GHz, 32nm) Design productivity Design and manufacturing aware integrated design flow Chip feasibility estimation technology Parallel and distributed processing Low power Power reduction technology DVFS Efficient Low Power implementation technology RTL power estimation and optimization Variation aware Variation tolerant clock Integrated variation aware analysis Power, Thermal, Noise, Cross talk, Stress/Litho/CMP analysis Manufacturing aware Integrated litho, manufacturing defect and dummy fill aware design technology Electrical DFM 2

4 Low Power Design 3

5 Increasing Power Consumption Large Scale and High Speed Increasing amounts of embedded memory Low Vth due to lower power supply voltages increasing dynamic and leakage power 4

6 Types of Low Power Design Techniques Various power reduction techniques exist, but they should be combined depending on the specification of the LSI Low Power Design Technology Main Power Component Which is Reduced Dynamic Power Leakage Power Low Voltage Multi VDD Power Control (DVFS) Switching Reduction Gated Clock Leakage Reduction Multi Vth VTCMOS (Substrate control) Power Gating MTCMOS (Power gating) Optimization of L Other Low Power Synthesis/P&R Pulsed latch The items in pink are areas which STARC has developed 5

7 What is DVFS? DVFS (Dynamic Voltage Frequency Scaling) is a way of reducing power consumption by in a specific block by pre-defining a number of combinations of Voltage and Speed which can selected according to the processing requirements. This functionality has to be embedded into the chip during the design stage. Mode Voltage (V) Speed (MHz) Perform ance Power VDD(V) 1.0 DVFS Operating condition Freq(MHz) H H M M L L Mode Performance L M L M L H Power L M L M L H 6

8 DVFS Implementation Multi Mode Logic Synthesis Multi mode Multi Corner Clock Synthesis Ring Style power switch placement Multi Mode Multi Corner Timing optimization Multi Mode 1.1V Clock Synthesis = voltage and clock path considered for each mode CLK LS Multi Corner = Considering multivoltage conditions 0.8~1.1V Delay value changes Non-DVFS Circuit Non-DVFS Circuit DVFS Ring Style Power Switch Placement enable Switch placed around Non-DVFS Circuit Non- DVFS Circuit Power Switched Area Switch Cell Multi-Mode Multi Corner Timing Optimization Optimization for 30 scenarios DVFS Operating modes : 5 Sign Off Corners : 6 Non-DVFS Circuit DVFS Circuit DVFS Test bench data 7

9 Multi power domain timing analysis Inter power domain (IPD) coefficient method reduced the number of combination for power domains CPU-A (Multi-Core) DVFS Mesh 1.1± ± ±0.1 CPU-B DVFS Mesh Multimedia Engine Middle Frequency Peripherals Low Frequency 1.1± ± ± ± ± ± ± ± ±0.05 System Interconnect Middle Frequency 1.0± ± ±0.1 Traditional Number of STA (3 power domain ) 9 8=72 9 8=72 9 8=72 IPD Number of STA (3 power domain ) 6 1 =6 6 1 =6 6 1 =6 n m c ( 2 1 ) m c 1.0± ± ±0.1 (Ex.) Mode (m)=6,corner (c)=9 6,Power domain (n) =3 1.1± ± ± ± =72 1.0± ± ± ± =72 0.9± ± ± ± =72 An example for high-voltage min (hold check) analysis Inter power domain (IPD) coefficient STA =6 6 1 =6 6 1 =6 36 The number of corner reduction will be explained in the next chapter Launch CK 1 Launch 1.5 Domain A Domain B Capture 8

10 Variation-aware Design and DFM 9

11 Variation and DFM Aware Design Manufacturing Effects Variation in Polygon Shapes Variation in circuit characteristics Particle Lithography CMP Planarity Via quality Transistor Shape Gate Length Gate Width TOX etc. Transistor Chars Vth Ion Ioff etc. Stress Doping impurity Rapid Thermal Annealing Random Telegraph Noise, etc. Wire Shape Wire width Wire thickness Wire spacing Via shape etc. Wire Chars Wire capacitance Wire resistance Via resistance Dielectric constants etc. Analysis Optimization Analysis Optimization Improve visible defects Improve Yield Improve invisible defects Add optimal margin to guarantee design Chip operating environment Operating Voltage Operating Temperature Power Supply noise On-Chip thermal distribution, etc. 10

12 Visible and Invisible Defects Visible Defects (e.g. litho hotspots) Invisible Defects (e.g. changes in delay due to STI stress Large influence on delay Necking Line end Optimize surrounding cell placement (Use low impact cells) Small influence on delay Bridging Via coverage Prevention (avoiding specific patterns) and routing optimization (fix wiring) -> eliminate litho hotspots Moving from visible defects to invisible defects Control delay variation -> improve timing convergence Electrical DFM 11

13 DFM-aware Design Results Defect Countermeasure Design Index Design Criteria Result Random Manufact -uring Increase Wire Width, Increase Wire Spacing Critical Area (CA) Via Add double vias Ratio of defective vias Reduce critical area Critical area 5.1% Improvement Ratio of double vias > 80% Double via ratio 88.45% Systematic Litho hotspot Litho Hotspot prevention Analysis fix Hotspot Error Count Litho hotspot correction example Before Hotspot Proportion of Criticality 1 hotspots fixed 100% Percentage of critical hotspots fixed 100% After Width expand 5nm wider and push down bottom edge on wire Move down 5nm 12

14 Electrical DFM Design Flow Goal Reduce design margin Shorten design turnaround time (same design margin Improve parametric yield loss) Transistor and and wire wire modeling Lithography // Etch Etch contour Stress Stress Litho/Etch aware Phase Litho Simulation Etch Simulation E-DFM Usage Model Contour-Base Contour-Base Leff/Weff Extract RC Extract Stress aware Phase Measurement (LOD/STIW etc) Convert (Vth0/U0 etc) Leff/Weff ΔVth0/ΔU0 Contour-Base RC Library Characterize Phase Characterize Tool ff tt ss Cell Cell characterization Cell Cell Library Library Chip Chip level level optimization Delay Delay calculation Cell Cell placement optimization E-DFMed Library Chip level Phase Chip/Block E-DFM Tool Litho/Etch Analysis (Leff/Weff, Contour-Base RC) Neighborhood Cell Analysis (Distance Placement Cell type) Without DFM Red dotted line With DFM Reducing design margins Reduce OCV by 22% SDF+ STA STAPhase Golden STA/SSTA STA Report Adjusted.lib 13

15 Variation Aware Design Technology Signoff Corner Reduction Scenario (Corner Count 9 6 4) Signoff Corners: Combined number of verification conditions needed to guarantee design. 14

16 Sign Off Corners and Design Margin To reduce the number of Signoff corners We should increase the Design margin (Design margin:guard band used at design time to ensure manufactured chip will work When the margin is large the design time overhead is high Need to reduce number of signoff corners without increasing design margin Solution: variation tolerant clocks and integrated variation aware design flow 15

17 Variation Aware Design Technology Variation Tolerant Robust Clocks Medium and low speed blocks Balance Tree High speed blocks Mesh Skew 150pS Slew 200pS 6 sign-off corners 16

18 Integrated Variation Aware Design Flow Floorplan phase P&R phase Sign-off phase Floorplan Average temperature Global routing SSTA timing margin estimation Hand-off check Timing margin Placement CTS Timing optimization LOCV base Routing Timing optimization SSTA base Hand-off check Power analysis Peak power vector IR drop analysis Timing analysis Sign-off check SSTA, Statistical cross talk RTL-VCD Power :Temperature variation :Transistor variation :IR drop variation Temperature comer SSTA hand-off, sign-off condition Timing corner(4), Uncertainty and OCV Corner and OCV for IR drop Library Statistical model for macro Hand-off and sign-off set up documents 17

19 Increasing Design Productivity 18

20 Relationship between Technologies and Results Shrinking Process Low Cost Business Profits Variation aware Design Technology Optimize variation through analysis of physical effects Manufacturing aware design technology Improved Yield Low Power Consumption Use variation aware design and optimize Design margin Signoff corners Low Power Design Technology Increased design complexity due to low power design Design technology to improve design productivity Increased design complexity due to manufacturing aware design High Design Productivity Low Power LSI Eco Society Low Cost Time to Market 19

21 Increase in TAT due to Scaling Number and types of blocks included on chip increasing Number of power and clock domains increasing => Floorplanning becomes more complex, number of iterations increase Large scale, high speed, shrinking process nodes => Complexity of P&R, Sign off Verification, DFM get higher and TAT longer 20

22 Design Methodology for Increased Productivity Integrated design flow 21

23 Summary Increasing complexity and lengthening design times Large Scale, High Speed, smaller feature size increase need for low power, variability and manufacturability aware design and in response to that design times are lengthening. Make design easier means identifying and using best design practices Low power design technologies Manufacturing aware and variability aware design Move from invisible defects to visible defects Sign off corners and design margins Reduce number of signoff corners Improve design productivity Develop and promote a good design methodology! 22

24 Thank you for your attention Acknowledgments This work was carried out as a part of the Next Generation Process Friendly Design Technology Development Project supported by the Ministry of Economy, Trade and Industry (METI) and the New Energy and Industrial Technology Development Organization (NEDO). 23