Low threshold continuous wave Raman silicon laser

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1 NATURE PHOTONICS, VOL. 1, APRIL, 2007 Low threshold continuous wave Raman silicon laser HAISHENG RONG 1 *, SHENGBO XU 1, YING-HAO KUO 1, VANESSA SIH 1, ODED COHEN 2, OMRI RADAY 2 AND MARIO PANICCIA 1 1: Intel Corporation, 2200 Mission College Blvd, SC12-326, Santa Clara, California 95054, USA 2 : Intel Corporation, S.B.I. Park Har Hotzvim, Jerusalem, 91031, Israel November 14, 2012 Sun young Jung

2 Content 1. Introduction 2. Theoretical background SRS TPA and FCA 3. Experiment Design consideration Fabrication Experimental setup 4. Result and conclusion 2

3 1. Introduction 1. Introduction Si Photonics offer low cost optoelectronics integration solutions But, bulk Si is an indirect band gap semiconductor Very low light emission efficiency Using stimulated Raman scattering for amplification and lasing Relatively high threshold power Required high pump power Improvement in the lasing threshold, slope efficiency, output power 3

4 2.1. SRS 2. Theoretical Background SRS : stimulated Raman scattering Energy level Rayleigh scattering Elastic scattering Raman scattering Inelastic scattering ν ν Stokes Wavelength ν Anti-Stokes Wavelength ν ν ν Material absorption Material loss Incident photon : absorbed by material Interaction with material lattice vibration Photon emission : different energy Frequency shift 4

5 2.2. TPA and FCA 2. Theoretical Background TPA (two photon absorption) Simultaneous absorption of 2 photons Excite a molecule to higher energy state Energy ν FCA Conduction Band Energy difference = E1 + E2 TPA EHP generation ν Nonlinear optical process ν FCA (free carrier absorption) k Material absorb photon Inter-band absorption : valence band conduction band FCA : in the same band Carrier is excited : filled state unoccupied state Valence Band 5

6 3.1. Design Consideration 3. Experiment Pump power along ring cavity TPA Linear loss FCA : linear loss coefficient for pump (1550nm) : TPA coefficient σ : FCA cross-section : effective carrier lifetime Round-trip gain in ring cavity G(at Stokes wavelength) : Raman gain coefficient for Stokes signal (1686nm) : linear loss coefficient σ : FCA cross-section Raman gain Incident power on resonance Loss : power coupling ratio : cavity loss : cavity length 0/ : cavity enhancement factor of pump depends on, A For low-threshold, high-efficiency 1 Reduce cavity loss 2 Optimize coupling ratio 3 Reduce carrier lifetime 6

7 3.2. Fabrication 3. Experiment Ring-cavity configuration and waveguide cross-section Design requirements : For low-threshold, high-efficiency Reduce cavity loss Optimize coupling ratio Reduce carrier lifetime W : 1.5μm H : 1.55μm d : 0.7μm Racetrack-ring length : 3cm, 1.5cm Bus waveguide : 1.6cm Coupling length : varied 700~1100μm - To obtain desired coupling ratio Reverse biased p-i-n diode - To reduce free-carrier lifetime - Need to optimize dopant implant condition 7

8 3.3. Experimental Setup 3. Experiment To optimize lasing condition Coupled into bus waveguide using lensed fiber Frequency shift, cavity enhancement effect Stokes wavelength is outside WDM filter s window Long wavelength pass filter : to block residual pump light 8

9 4.1. Results 4. Result and Conclusion 3cm cavity case Coupling ratio (0.3, 0.12) Reverse bias : 25V As bias is increased : laser output is increased ( sweep out carrier efficiently As bias is lowered : laser output saturate earlier ( longer carrier lifetime) Threshold change only slightly ( TPA much weaker at low pump power) 0V is applied : can still operate ( reduced loss and lifetime S.E = 23%, Threshold > 40mW S.E = 5.4%, Threshold < 20mW Lasing threshold and slope efficiency depend on coupling ratio for pump and signal wavelength 9

10 4.2. Results and Conclusion 4. Result and Conclusion Raman Si laser spectrum 1.5cm cavity case Coupling ratio (0.43, 0.063) Pump laser at nm, lasing at nm Side-mode suppression ratio > 80dB Laser spectral linewidth < 100kHz Lasing performance can be optimized by adjusting coupling ratio Lasing can also be achieved in smaller cavity with no bias Realization of low-threshold and zero-power-consumption Si Raman laser Demonstrate performance of low threshold and high output power Also delivers spectral purity No-voltage, all-optical laser are particularly attractive : remote sensing application 10

11 Thank you Question and Answer 11

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