Applications. Power [V] Q1 17 < Speed [khz] MP Developing Planning Review. Industrial (10kW~) UPS (~1kW) Hybrid Car Power train (~50KW)

Size: px
Start display at page:

Download "Applications. Power [V] Q1 17 < Speed [khz] MP Developing Planning Review. Industrial (10kW~) UPS (~1kW) Hybrid Car Power train (~50KW)"

Transcription

1

2 Applications Power [V] MP Developing Planning Review Ruggedness Conduction Switching Hybrid Car Power train (~50KW) Industrial (10kW~) UPS (~1kW) Welder (~500W) Tsc RBSOA Ic X 3 Tjmax 175C Vce(sat) 1.8V@650V 2.0V@1200V High Speed E-total Freq ~20kHz (L) ~50kHz (M) ~100kHz (H) UPS O O M Welder O O M,H LV Motor O O O O L IH X X O O O H HA O O O H 700 Automotive O O O O L Solar O O O M Microwave (Surge 4kV) Q1 17 ( O : Over : Same as X : No need ) Motor Drive (IPM Replacement) (500W~1kW) Portable Welder (~300W) Welder (~300W) Indoor Air- (~500W) Solar inverter (~1kW) < 400 Ignitor Automotive Qualified AECQ-101 Performance optimize High Speed High Ruggedness Speed [khz]

3 E off [mj] E off [mj] V Trade-off curve V Trade-off curve 0.70 Comp. T Series 1.40 Comp. T Series Higher efficiency 1.00 MX : 1200V FEH 0.40 Comp. H3 Series 0.80 Comp. H3 Series MX : 650V FEH 0.20 MX : 650V FES 0.40 MX : 1200V FES V CE(sat) [V] : Vcc=400V, Ic=40A, V GE =15V, Rg=5Ω, Tj=25 V CE(sat) [V] : V CC =600V, I C =40A, V GE =15V, R G =10Ω, Tj=25

4 s Limit I MX SOA VBR(CES) Ic=3mA, TJ=25 C >1250V 1410V 1352V V CE(sat) RBSOA Ic=100A,TJ=25 C Ic=300A,Vce=600V Rg,on/off=1.0 Vge=-15V/+15V TJ=150 C 1.8V ±0.25V 1.82V 1.85V 3 x Ic,nom Passed Passed RBSOA V CE =600V R G.on/off =1. 0Ω T J =150 5xIc,nom (Passed) Ic=500A SCSOA Vce=800V Rg=1.0Ω TJ=150 C >10us Passed Passed 9.0mJ (Rg=5.5Ω) 12.5mJ (Rg=6.7Ω) Eon Eoff Ic=100A,Vce=600V Rg,on/off=1.0Ω Vge=-15V/+15V TJ=150 C cf. ref cf. ref 10.9mJ 10.3mJ SCSOA V CE =800V R G.on/off =1. 0Ω T J =150 25us (Failed) FLR6003 W04 (40%) 25us 372A

5 650V Line-up Part No. I C [A] V CE(sat) [V] Eon [mj] Eoff [mj] Package Description Status (*E/S) MBF15T65PEHTH 15A TO220FP Low Conduction High Ruggedness *Oct. 16 MBQ40T65FESCTH 40A High speed MP Low Conduction MBQ40T65QESTH 40A * Mar. 17 Ultra High Speed TO247 MBQ50T65FESCTH 50A High speed MP MBQ60T65PESTH 60A Ultra High speed High Ruggedness MP 1200V Line-up Part No. I C [A] V CE(sat) [V] Eon [mj] Eoff [mj] Package Description Status (*E/S) MBQ25T120FESCTH 25A TO247 High speed MP MBQ40T120FESTH 40A TO247 High speed MP MBQ40T120QESTH 40A 2.0 TBD TBD TO247 High speed * May. 17 MBW50T120PHWH 50A 1.8@25C TBD@150C TBD@150C Sawn on foil MBW100T120PHWH 100A 1.8@25C 9@150C 10.9@150C Sawn on foil Low conduction High Ruggedness Low conduction High Ruggedness * Jan. 17 * Dec. 16

6 AC Input Rectifier Diode PFC (Optional) Primary Inverter Second FRD Discrete IGBT Half Bridge Topology 220V 1 Phase Output [V] Part # [A] 650 MBQ40T65FESCTH MBQ50T65FESCTH MBQ60T65PESTH 60 Discrete IGBT Output [V] Part # [A] 1200 MBQ25T120FESCTH 25 Full Bridge Topology 380V 3 Phase 1200 MBQ40T120FESTH 40 Brake /AC Inverter Discrete IGBT 3Ф Motor Low Power 3 Phase AC Output [V] Part # [A] 650 *MBF15T65PEHTH 15 * : Under developing

7 PV Array / Converter /AC Inverter Output Load Discrete IGBT [V] Part # [A] Solar Bi-Direction / Battery Bank 650 MBQ40T65FESCTH MBQ50T65FESCTH MBQ60T65PESTH *MBQ40T120PESTH 40 AC Input Rectifier Diode Chopper Module /AC Inverter Output Load Discrete IGBT UPS Inverter 3 Phase Bi-Direction / Battery Bank [V] Part # [A] 1200 MBQ25T120FESCTH *MBQ40T120PESTH 40 * : Under developing

8 - High ruggedness performance with stable temperature at Set level Electrical characteristics test Set evaluation test Item MBF15T65PEH STGF15H60DF IRGIB15B60KD [V] [V] MBF15T65PEH Company S Company I Efficiency : 91.1% Efficiency : 91.5% Efficiency : 91.3% Tr [ns] Tf [ns] AC Eon [mj] FRD S/W Eoff [mj] Etot [mj] Trr [ns] Irr [A] MBF15T65PEH STGF15H60DF IRGIB15B60KD1 Temperature : 40 C Temperature : 40 C Temperature : 40 C Rugged RBSOA Icex5 OK Icex4 OK Icex4 OK Short Circuit Temp=150'C, Vcc=360V 11us 5us 12us

9 - Better Speed performance with stable temperature at Set level Electrical characteristics test Set evaluation test Item MBQ40T65 FDSC MBQ40T65 FESC IKW40N60H3 MBQ40T65FESC IKW40N60H3 BV CES V GE =0V, I C =1mA 725V 724V 743V V CE(SAT) V GE =15V, I C =40A 1.92V 1.86V 1.85V V GE(th) V CE =V GE, I C =1mA 4.63V 5.14V 4.83V V F I F =20A 1.39V 1.45V 1.58V t d(on) 43ns 46ns 31ns ARC Welder Full-Bridge Rg=8.2Ω 200A 30kHz AC t r 52ns 49ns 63ns t d(off) t f I C =40A, V GE =±15V, R G =7.9Ω, Inductive Load Ta=25 288ns 39ns 317ns 38ns 318ns 43ns E on 0.64mJ 0.60mJ 0.78mJ E off 0.36mJ 0.36mJ 0.50mJ tsc V GE =15V 23us 23us 21us Internal Rg - 1Ω 1Ω -

10 - Better Speed performance with stable temperature at Set level Electrical characteristics test Item MBQ50T65 FDSC MBQ50T65 FESC IKW50N60H3 Set evaluation test MBQ50T65FESC IKW50N60H3 BV CES V GE =0V, I C =1mA 708V 722V 758V V CE(SAT) V GE =15V, I C =40A 1.75V 1.83V 1.82V V GE(th) V CE =V GE, I C =1mA 5.49V 5.08V 4.95V V F I F =20A 1.39V 1.59V 1.55V ARC Welder Full-Bridge Rg=8.2Ω 200A 30kHz t d(on) 57ns 56ns 42ns AVG. : 91.9, AVG. : 1016, AC t r 63ns 61ns 74ns t d(off) t f I C =50A, V GE =±15V, R G =7.9Ω, Inductive Load Ta=25 321ns 41ns 327ns 43ns 393ns 47ns E on 0.93mJ 0.84mJ 1.15mJ E off 0.58mJ 0.66mJ 0.94mJ tsc V GE =15V 21us 21us 23us Internal Rg - 1Ω 1Ω -

11 - Better Speed performance with stable temperature at Set level Electrical characteristics test Item MBQ60T65PES FGH60N60SMD Set evaluation test MBQ60T65PES FGH60N60SMD BV CES V GE =0V, I C =1mA 716V 673V V CE(SAT) V GE =15V, I C =40A 1.82V 1.85V V GE(th) V CE =V GE, I C =1mA 4.8V 4.9V CO 2 Welder V F I F =20A 1.6V 2.1V C ies 4092pF 5757pF V CE = 25V, Half-Bridge Rg=22Ω O/P = 16V/190A Fsw = 30kHz C res V GE = 0V, 837pF 2189pF f = 1MHz C oes 3663pF 3303pF AVG. : 91.9, AVG. : 1016, t d(on) 37ns 41ns AC t r t d(off) t f E on I C =50A, V GE =±15V, R G =7.9Ω, Inductive Load Ta=25 44ns 171ns 50ns 0.53mJ 54ns 285ns 48ns 0.61mJ E off 0.64mJ 0.75mJ tsc 12us 20us Isc V GE =15V 291A 309A IGBT

12 - Better Speed performance with stable temperature at Set level Electrical characteristics test Set evaluation test Item MBQ25T120FESC IKW25N120H3 MBQ25T120FESC IKW25N120H3 BV CES V GE =0V, I C =1mA 1329V 1332V V CE(SAT) V GE =15V, I C =40A 1.96V 2.01V V GE(th) V CE =V GE, I C =1mA 5.92V 5.98V V F I F =25A 3.03V 2.47V t d(on) 74ns 50ns ARC Welder Full-Bridge Rg=20/7.5Ω 250A 23kHz AC t r 40ns 37ns t d(off) t f V CC =600V, I C =25A, V GE =±15V, R G =12Ω, Inductive Load Tc=25 319ns 28ns 249ns 31ns E on 1.15mJ 1.6mJ E off 0.81mJ 0.81mJ tsc 27us 68us Isc V GE =15V 167A 87A Internal Rg - 1Ω -

13 - Better Speed performance with stable temperature at Set level Electrical characteristics test Set evaluation test Item BV CES MBQ40T120FDS MBQ40T120FES IKW40N120H3 V GE =0V, I C =1mA V CE(SAT) V GE=15V, I C =40A V GE(th) V CE =V GE, I C =1mA 1344V V 1.90V 1.90V 2.12V 5.49V 5.49V 5.63V V F I F =40A 2.31V V t d(on) 84ns 80ns 68ns ARC Welder Full-Bridge Rg=8.2Ω 200A 30kHz MBQ40T120FES MBQ40T120PES IKW40N120H AC t r t d(off) t f E on V CC =600V, I C =40A, V GE =±15V, R G =12Ω, Inductive Load Tc=25 50ns 312ns 37ns 2.39mJ 38ns 348ns 35ns ns 270ns 40ns 2.81mJ E off 0.71mJ 0.71mJ 0.79mJ tsc V GE =15V 27us 27us 45us Internal Rg - 1Ω 1Ω -

14 Thank you! Contact information : Jason.park@magnachip.com

MG200Q2YS60A(1200V/200A 2in1)

MG200Q2YS60A(1200V/200A 2in1) TOSHIBA IGBT Module Silicon N Channel IGBT (V/A in) High Power Switching Applications Motor Control Applications Integrates a complete half bridge power circuit and fault-signal output circuit in one package.

More information

TOSHIBA IGBT Module Silicon N Channel IGBT MG400Q2YS60A

TOSHIBA IGBT Module Silicon N Channel IGBT MG400Q2YS60A MGQYSA TOSHIBA IGBT Module Silicon N Channel IGBT MGQYSA High Power Switching Applications Motor Control Applications Integrates a complete half bridge power circuit and fault-signal output circuit in

More information

Item Symbol Condition Value Units V C = 25 C 1200 V V C = 25 C ±20

Item Symbol Condition Value Units V C = 25 C 1200 V V C = 25 C ±20 LVHG121_Preliminary LVHG121Z*_Preliminary Features Soft punch through IGBT(SPT + IGBT) - Low saturation voltage - Positive temperature coefficient - Fast switching - High ruggedness Free wheeling diodes

More information

Symbol Parameters Test Conditions Min Typ Max Unit R thjc. Per IGBT 0.09 K/W R thjcd

Symbol Parameters Test Conditions Min Typ Max Unit R thjc. Per IGBT 0.09 K/W R thjcd 2V 2A IGBT Module RoHS Features Ultra low loss High ruggedness High short circuit capability Positive temperature coefficient With fast free-wheeling diodes Agency Approvals Applications Inverter Converter

More information

SUSPM TM SEPT LUH75G1201_Preliminary LUH75G1201Z*_Preliminary. SUSPM1 94 X 34 X 30mm. 1200V 75A 2-Pack IGBT Module. Features.

SUSPM TM SEPT LUH75G1201_Preliminary LUH75G1201Z*_Preliminary. SUSPM1 94 X 34 X 30mm. 1200V 75A 2-Pack IGBT Module. Features. SEPT. 9 LUH75G121_Preliminary LUH75G121Z*_Preliminary SUSPM TM 1V 75A 2-Pack IGBT Module Features Soft punch through IGBT(SPT + IGBT) - Low saturation voltage - Positive temperature coefficient - Fast

More information

Trench gate field-stop, 1200 V, 25 A, low-loss M series IGBT in a TO-247 package

Trench gate field-stop, 1200 V, 25 A, low-loss M series IGBT in a TO-247 package Datasheet Trench gate fieldstop, 2 V, 25 A, lowloss M series IGBT in a TO247 package Features TO247 3 2 Maximum junction temperature: T J = 75 C μs of shortcircuit withstand time Low V CE(sat) =.85 V (typ.)

More information

VCC 320V, VGE=15V Tj 150 C. Emitter IGBT Max. Power Dissipation PD_IGBT 360 W

VCC 320V, VGE=15V Tj 150 C. Emitter IGBT Max. Power Dissipation PD_IGBT 360 W FGW5NVD (High-Speed V series) V / 5A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Inverter for Motor drive AC and DC Servo drive

More information

STGW60H65DFB, STGWA60H65DFB STGWT60H65DFB

STGW60H65DFB, STGWA60H65DFB STGWT60H65DFB STGW60H65DFB, STGWA60H65DFB STGWT60H65DFB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Datasheet - production data Features TAB Maximum junction temperature: T J = 175 C High speed switching

More information

STGW60H65FB STGWT60H65FB

STGW60H65FB STGWT60H65FB STGW60H65FB STGWT60H65FB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Features Datasheet - production data TAB Maximum junction temperature: T J = 175 C High speed switching series Minimized

More information

V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.94V. Symbol V GE I C I CM I LM I F 30 I FM. t SC P D T L. R θ JA R θ JC

V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.94V. Symbol V GE I C I CM I LM I F 30 I FM. t SC P D T L. R θ JA R θ JC AOKB5M 5V, A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (α IGBT) technology 5V breakdown voltage Very fast and soft recovery freewheeling diode High

More information

SUSPM TM DEC LVH200G1201_Preliminary LVH200G1201Z*_Preliminary. SUSPM X 48.5 X 30 mm. 1200V 200A 2-Pack IGBT Module. Features.

SUSPM TM DEC LVH200G1201_Preliminary LVH200G1201Z*_Preliminary. SUSPM X 48.5 X 30 mm. 1200V 200A 2-Pack IGBT Module. Features. DEC 211 LVH2G121_Preliminary LVH2G121Z*_Preliminary SUSPM TM 12V 2A 2-Pack IGBT Module Features Soft Punch Through IGBT(SPT+ IGBT) - Low saturation voltage - Positive temperature coefficient - Fast Switching

More information

GT50J325 GT50J325. High Power Switching Applications Fast Switching Applications. Maximum Ratings (Ta = 25 C) Thermal Characteristics

GT50J325 GT50J325. High Power Switching Applications Fast Switching Applications. Maximum Ratings (Ta = 25 C) Thermal Characteristics GT5J25 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5J25 High Power Switching Applications Fast Switching Applications Unit: mm The th generation Enhancement-mode Fast switching (FS):

More information

Features TO-264 E. Symbol Description SGL50N60RUFD Units V CES Collector-Emitter Voltage 600 V V GES Gate-Emitter Voltage ± 20 V Collector T

Features TO-264 E. Symbol Description SGL50N60RUFD Units V CES Collector-Emitter Voltage 600 V V GES Gate-Emitter Voltage ± 20 V Collector T Short Circuit Rated IGBT General Description Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD

More information

SKM200GAH123DKL 1200V 200A CHOPPER Module August 2011 PRELIMINARY RoHS Compliant

SKM200GAH123DKL 1200V 200A CHOPPER Module August 2011 PRELIMINARY RoHS Compliant SKM2GAH123DKL 12V 2A CHOPPER Module August 211 PRELIMINARY RoHS Compliant FEATURES Ultra Low Loss High Ruggedness High Short Circuit Capability V CE(sat) With Positive Temperature Coefficient With Fast

More information

STGW40H120DF2, STGWA40H120DF2

STGW40H120DF2, STGWA40H120DF2 STGW4H12DF2, STGWA4H12DF2 Trench gate field-stop IGBT, H series 12 V, 4 A high speed Datasheet - production data Features Maximum junction temperature: TJ = 175 C High speed switching series Minimized

More information

TC=25 C, Tj=150 C Note *1

TC=25 C, Tj=150 C Note *1 FGW75N6HD (High-Speed V series) 6V / 75A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner

More information

MG400V2YS60A MG400V2YS60A. High Power Switching Applications Motor Control Applications. Equivalent Circuit

MG400V2YS60A MG400V2YS60A. High Power Switching Applications Motor Control Applications. Equivalent Circuit MGV2YS6A TOSHIBA IGBT Module Silicon N Channel IGBT MGV2YS6A High Power Switching Applications Motor Control Applications Unit in mm The electrodes are isolated from case. Enhancement mode Thermal output

More information

Item Symbol Condition Value Units V C = 25 C 1200 V V C = 25 C ±20

Item Symbol Condition Value Units V C = 25 C 1200 V V C = 25 C ±20 LUHG121_Preliminary LUHG121Z*_Preliminary SEPT. 29 SUSPM TM 12V A 2-Pack IGBT Module Features Soft punch through IGBT(SPT + IGBT) - Low saturation voltage - Positive temperature coefficient - Fast switching

More information

STGFW20H65FB, STGW20H65FB, STGWT20H65FB

STGFW20H65FB, STGW20H65FB, STGWT20H65FB STGFW20H65FB, STGW20H65FB, STGWT20H65FB Trench gate field-stop IGBT, HB series 650 V, 20 A high speed Datasheet - production data TO-247 TAB 3 2 1 TO-3P 1 1 2 3 2 1 TO-3PF Figure 1. Internal schematic

More information

Features. Applications. Characteristics Symbol Rating Unit. T C=25 o C I C. T C=80 o C 100 A. Operating Junction Temperature Tj -55~150

Features. Applications. Characteristics Symbol Rating Unit. T C=25 o C I C. T C=80 o C 100 A. Operating Junction Temperature Tj -55~150 General Description MagnaChip s IGBT Module 7DM-1 package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT Module series are

More information

MPMC100B120RH NPT & Rugged Type 1200V IGBT Module

MPMC100B120RH NPT & Rugged Type 1200V IGBT Module General Description MagnaChip s IGBT Module 7DM- package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT Module series are

More information

STGB20H60DF, STGF20H60DF, STGP20H60DF

STGB20H60DF, STGF20H60DF, STGP20H60DF STGB20H60DF, STGF20H60DF, STGP20H60DF 600 V, 20 A high speed trench gate field-stop IGBT Datasheet - production data TAB Features High speed switching Tight parameters distribution TO-220 1 2 3 TO-220FP

More information

V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.7V TO-220F C G E. Symbol V GE I C I CM I LM I F I FM. t SC P D T J, T STG T L.

V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.7V TO-220F C G E. Symbol V GE I C I CM I LM I F I FM. t SC P D T J, T STG T L. AOTF5B65M 65V, 5A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (α IGBT) technology 65V breakdown voltage Very fast and soft recovery freewheeling diode

More information

STGW28IH125DF STGWT28IH125DF

STGW28IH125DF STGWT28IH125DF STGW28IH125DF STGWT28IH125DF 1250 V, 30 A IH series trench gate field-stop IGBT Datasheet - production data Features TAB Designed for soft commutation only Maximum junction temperature: T J = 175 C Minimized

More information

EMP30P06D PIM+ Power module frame pins mapping. EMP Features:

EMP30P06D PIM+ Power module frame pins mapping. EMP Features: Bulletin I27182 08/06 EMP30P06D PIM+ EMP Features: Power Module: NPT IGBTs 30A, 600V 10us Short Circuit capability Square RBSOA Low Vce (on) (2.05Vtyp @ 30A, 25 C) Positive Vce (on) temperature coefficient

More information

HiRel TM INT-A-Pak 2, PLASTIC HALF-BRIDGE IGBT MODULE

HiRel TM INT-A-Pak 2, PLASTIC HALF-BRIDGE IGBT MODULE PD-97014C HiRel TM INT-A-Pak 2, PLASTIC HALF-BRIDGE IGBT MODULE G300HHCK12P2 Product Summary Part Number V CE I C V CE(SAT) G300HHCK12P2 1200V 300A 2.2 HiRel TM INT-A-Pak 2 The HiRel TM INT-A-Pak series

More information

V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.95V. Symbol V GE I C I CM I LM I F I FM P D T L. R θ JA R θ JC

V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.95V. Symbol V GE I C I CM I LM I F I FM P D T L. R θ JA R θ JC AOKBM V, A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest Alpha IGBT (α IGBT) technology V breakdown voltage Fast and soft recovery freewheeling diode High efficient

More information

VCC 600V,VGE=12V Tj 150 C. Emitter IGBT Max. Power Dissipation PD_IGBT 340 W

VCC 600V,VGE=12V Tj 150 C. Emitter IGBT Max. Power Dissipation PD_IGBT 340 W FGWNHD (High-Speed V series) V / A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner

More information

V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.57V TO-263 D 2 PAK C E E G E AOB5B65M1. Symbol V GE I C I CM I LM I F I FM. t SC P D T L.

V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.57V TO-263 D 2 PAK C E E G E AOB5B65M1. Symbol V GE I C I CM I LM I F I FM. t SC P D T L. AOTBM/AOBBM V, A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (α IGBT) technology V breakdown voltage Very fast and soft recovery freewheeling diode

More information

V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.6V. Symbol V GE I C I CM I LM I F I FM. t SC P D T L. R θ JA R θ JC

V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.6V. Symbol V GE I C I CM I LM I F I FM. t SC P D T L. R θ JA R θ JC AOTB6M2 6V, A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest Alpha IGBT (α IGBT) technology 6V breakdown voltage Very fast and soft recovery freewheeling diode

More information

V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.57V. Symbol V GE I C I CM I LM I F I FM. t SC P D T J, T STG T L. R θ JA R θ JC

V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.57V. Symbol V GE I C I CM I LM I F I FM. t SC P D T J, T STG T L. R θ JA R θ JC AODBM V, A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (α IGBT) technology V breakdown voltage Very fast and soft recovery freewheeling diode High

More information

Item Symbol Condition Rat ing Unit Collector-Emitter voltage Gate-Emitter voltage. Continuous. A Collector current

Item Symbol Condition Rat ing Unit Collector-Emitter voltage Gate-Emitter voltage. Continuous. A Collector current 7MBRS6 IGBT Modules IGBT MODULE (S series) 6 / / PIM Features Low CE(sat) Compact package P.C. board mount Converter diode bridge, Dynamic brake circuit pplications Inverter for motor drive C and DC servo

More information

V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.6V TO-220F C. Symbol V GE I C I CM I LM I F I FM. t SC P D T J, T STG T L.

V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.6V TO-220F C. Symbol V GE I C I CM I LM I F I FM. t SC P D T J, T STG T L. AOTFB6M2 6V, A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest Alpha IGBT (α IGBT) technology 6V breakdown voltage Very fast and soft recovery freewheeling diode

More information

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324 GTJ2 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GTJ2 High Power Switching Applications Fast Switching Applications Unit: mm Fourth-generation IGBT Enhancement mode type Fast switching

More information

MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation

MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation General Description This IGBT is produced using advanced MagnaChip s Field Stop Trench IGBT 2 nd Generation Technology, which is not only the highest efficiency capable of switching behavior, but also

More information

STGW50HF60SD. 60 A, 600 V, very low drop IGBT with soft and fast recovery diode. Features. Application. Description

STGW50HF60SD. 60 A, 600 V, very low drop IGBT with soft and fast recovery diode. Features. Application. Description 60 A, 600 V, very low drop IGBT with soft and fast recovery diode Features Very low otate voltage drop Low switching off High current capability Very soft ultra fast recovery antiparallel diode Application

More information

Item Symbol Unit MBL1600E17F Collector Emitter Voltage V CES V 1,700 Gate Emitter Voltage V GES V 20 Collector Current

Item Symbol Unit MBL1600E17F Collector Emitter Voltage V CES V 1,700 Gate Emitter Voltage V GES V 20 Collector Current IGBT MODULE Spec.No.IGBT-SP-57 R P MBL6E7F Silicon N-channel IGBT 7V F version FEATURES Soft switching behavior & low conduction loss: Soft low-injection punch-through with Advanced trench HiGT* (*High

More information

Chapter 2. Technical Terms and Characteristics

Chapter 2. Technical Terms and Characteristics Chapter 2 Technical Terms and Characteristics CONTENTS Page 1 IGBT terms 2-2 2 IGBT characteristics 2-5 This section explains relevant technical terms and characteristics of IGBT modules. 2-1 1 IGBT terms

More information

Item Symbol Unit MBM1000FS17G Collector Emitter Voltage V CES V 1,700 Gate Emitter Voltage V GES V 20 Collector Current

Item Symbol Unit MBM1000FS17G Collector Emitter Voltage V CES V 1,700 Gate Emitter Voltage V GES V 20 Collector Current IGBT MODULE Silicon N-channel IGBT 17V G version Spec.No.IGBT-SP-163 R P 1 FEATURES High current density package Low stray inductance & low Rth(j-c) Half-bridge (2in1) Built in temperature sensor Scalable

More information

MBN3600E17F Silicon N-channel IGBT 1700V F version

MBN3600E17F Silicon N-channel IGBT 1700V F version Silicon N-channel IGBT 17V F version Spec.No.IGBT-SP-124 R P1 FEATURES Soft switching behavior & low conduction loss: Soft low-injection punch-through with trench gate IGBT. Low driving power: Low input

More information

AOT15B65M1/AOB15B65M1

AOT15B65M1/AOB15B65M1 AOT5B65M/AOB5B65M 65V, 5A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (α IGBT) technology 65V breakdown voltage Very fast and soft recovery freewheeling

More information

V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.57V. Symbol V GE I C I CM I LM I F I FM. t SC P D T J, T STG T L. R θ JA R θ JC

V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.57V. Symbol V GE I C I CM I LM I F I FM. t SC P D T J, T STG T L. R θ JA R θ JC AOTFBM V, A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (α IGBT) technology V breakdown voltage Very fast and soft recovery freewheeling diode High

More information

V CE I C (T C =100 C) V CE(sat) (T J =25 C) Symbol V GE I C I CM I LM 6.6 I F 2.6 I FM. t SC P D T J, T STG T L. R θ JA R θ JC

V CE I C (T C =100 C) V CE(sat) (T J =25 C) Symbol V GE I C I CM I LM 6.6 I F 2.6 I FM. t SC P D T J, T STG T L. R θ JA R θ JC AOD5B5N 5V, 5A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest Alpha IGBT (α IGBT) technology 5V breakdown voltage Very low turn-off switching loss with softness

More information

STGW60H65DFB STGWT60H65DFB

STGW60H65DFB STGWT60H65DFB STGW60H65DFB STGWT60H65DFB 650 V, 60 A high speed trench gate field-stop IGBT Datasheet - production data Features TAB Maximum junction temperature: T J = 175 C High speed switching series Minimized tail

More information

Rating 600 ± to to Unit V V A A A W W C C N m. Symbol Characteristics Conditions Unit Min. Typ. Max.

Rating 600 ± to to Unit V V A A A W W C C N m. Symbol Characteristics Conditions Unit Min. Typ. Max. 600 / 50 Molded Package Features Small molded package Low power loss Soft switching with low switching surge and noise High reliability, high ruggedness (RBSO, SCSO etc.) Comprehensive line-up pplications

More information

V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.95V. Symbol V GE I C I CM I LM. I F to 150 I FM P D T J, T STG T L

V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.95V. Symbol V GE I C I CM I LM. I F to 150 I FM P D T J, T STG T L AOKBHAL V, A AlphaIGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (αigbt) Technology V Breakdown voltage Very fast and soft recovery freewheeling diode High

More information

FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT

FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT FGLNBNTD V, A NPT Trench IGBT Features High Speed Switching Low Saturation Voltage: V CE(sat) =.5 V @ = A High Input Impedance Built-in Fast Recovery Diode Applications UPS, Welder General Description

More information

Item Symbol Condition Rat ing Unit Collector-Emitter voltage Gate-Emitter voltage. Continuous. A Collector current

Item Symbol Condition Rat ing Unit Collector-Emitter voltage Gate-Emitter voltage. Continuous. A Collector current 7MBR3S6 IGBT Modules IGBT MODULE (S series) 6 / 3 / PIM Features Low CE(sat) Compact package P.C. board mount Converter diode bridge, Dynamic brake circuit pplications Inverter for motor drive C and DC

More information

Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. A Collector current A. Continuous Tc=25 C 35. Tc=80 C 30.

Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. A Collector current A. Continuous Tc=25 C 35. Tc=80 C 30. 7MBR2S12 IGBT Modules IGBT MODULE (S series) 12 / 2 / PIM Features Low CE(sat) Compact package P.C. board mount Converter diode bridge, Dynamic brake circuit pplications Inverter for motor drive C and

More information

Features. Description. Table 1: Device summary. Order code Marking Package Packing STGYA120M65DF2AG G120M65DF2AG Max247 long leads Tube

Features. Description. Table 1: Device summary. Order code Marking Package Packing STGYA120M65DF2AG G120M65DF2AG Max247 long leads Tube Automotivegrade trench gate fieldstop IGBT, M series 650 V, 120 A low loss in a Max247 long leads package Datasheet production data Features AECQ101 qualified 6 µs of shortcircuit withstand time VCE(sat)

More information

STGW40V60DF STGWT40V60DF

STGW40V60DF STGWT40V60DF STGW4V6DF STGWT4V6DF 6 V, 4 A very high speed trench gate field-stop IGBT Datasheet - production data Features Maximum junction temperature: T J = 175 C Very high speed switching series Tail-less switching

More information

InductionHeatingSeries ReverseconductingIGBTwithmonolithicbodydiode IHW20N120R3. Datasheet. IndustrialPowerControl

InductionHeatingSeries ReverseconductingIGBTwithmonolithicbodydiode IHW20N120R3. Datasheet. IndustrialPowerControl InductionHeatingSeries ReverseconductingIGBTwithmonolithicbodydiode IHWNR Datasheet IndustrialPowerControl IHWNR Reverse conducting IGBT with monolithic body diode Features: C Powerful monolithic body

More information

Item Symbol Condition Rat ing Unit Collector-Emitter voltage Gate-Emitter voltage. Continuous Tc=25 C 75. A Collector current.

Item Symbol Condition Rat ing Unit Collector-Emitter voltage Gate-Emitter voltage. Continuous Tc=25 C 75. A Collector current. 7MBR5SB12 IGBT Modules IGBT MODULE (S series) 12 / 5 / PIM Features Low CE(sat) Compact package P.C. board mount Converter diode bridge, Dynamic brake circuit pplications Inverter for motor drive C and

More information

ABB HiPak TM. IGBT Module 5SNG 0150P VCE = 4500 V IC = 150 A

ABB HiPak TM. IGBT Module 5SNG 0150P VCE = 4500 V IC = 150 A VCE = 45 V IC = 5 A ABB HiPak TM IGBT Module 5SNG 5P453 Doc. No. 5SYA 593-4 7-23 Ultra low loss, rugged SPT + chip-set Smooth switching SPT + chip-set for good EMC High iulation package AlSiC base-plate

More information

ABB HiPak. IGBT Module 5SNA 1200G VCE = 4500 V IC = 1200 A

ABB HiPak. IGBT Module 5SNA 1200G VCE = 4500 V IC = 1200 A VCE = 45 V IC = 2 A ABB HiPak IGBT Module 5SNA 2G453 Doc. No. 5SYA 4-5 3-26 Ultra low-loss, rugged SPT + chip-set Smooth switching SPT + chip-set for good EMC Industry standard package High power deity

More information

V CE I C (T C =100 C) V CE(sat) (T C =25 C) 1.85V. Symbol V GE. ±20 V 500ns 24 V V SPIKE I C I CM I LM I F 10 I FM. t SC P D T J, T STG T L

V CE I C (T C =100 C) V CE(sat) (T C =25 C) 1.85V. Symbol V GE. ±20 V 500ns 24 V V SPIKE I C I CM I LM I F 10 I FM. t SC P D T J, T STG T L AOKB6D 6V, A Alpha IGBT TM with Diode General Description The Alpha IGBT TM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They

More information

GA200TD120U PD D. Ultra-Fast TM Speed IGBT "HALF-BRIDGE" IGBT DUAL INT-A-PAK. Features V CES = 1200V. V CE(on) typ. = 2.3V.

GA200TD120U PD D. Ultra-Fast TM Speed IGBT HALF-BRIDGE IGBT DUAL INT-A-PAK. Features V CES = 1200V. V CE(on) typ. = 2.3V. "HALF-BRIDGE" IGBT DUAL INT-A-PAK Features Generation 4 IGBT technology UltraFast: Optimized for high operating frequencies 8-4 khz in hard switching, >2 khz in resonant mode Very low conduction and switching

More information

MPMB75B120RH NPT & Rugged Type 1200V IGBT Module. Features. Applications. devices are. total losses. Equivalent Circuit 7DM-1 E301932

MPMB75B120RH NPT & Rugged Type 1200V IGBT Module. Features. Applications. devices are. total losses. Equivalent Circuit 7DM-1 E301932 General Description MagnaChip s IGBT Module 7DM- package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT Module series are

More information

MBN1200F33F-C 3300V Silicon N-channel IGBT F version with SiC Diode

MBN1200F33F-C 3300V Silicon N-channel IGBT F version with SiC Diode MBNF33F-C 33V Silicon N-channel IGBT F version with SiC Diode Spec.No.IGBT-SP-5 R P FEATURES Soft switching & low conduction loss IGBT : Soft low-injection punch-through High conductivity IGBT with advanced

More information

XI'AN IR-PERI Company

XI'AN IR-PERI Company FineSiliconPowerNetworks HALF-BRIDGE IGBT Features Applications IGBT NPT Technology AC & DC Motor controls VCES = 1200V Ic = 75A VCE(ON) typ. = 2.8V @ Ic = 75A 10μs Short circuit capability Low turn-off

More information

1200V 50A IGBT Module

1200V 50A IGBT Module 12V 5A MG125W-XBN2MM RoHS Features High level of integration only one power semiconductor module required for the whole drive Low saturation voltage and positive temperature coefficient Fast switching

More information

MPMD200B120RH NPT & Rugged Type 1200V IGBT Module. Features. conditioning. Applications. total losses. Equivalent Circuit 7DM-3. Welding Machine, UPS

MPMD200B120RH NPT & Rugged Type 1200V IGBT Module. Features. conditioning. Applications. total losses. Equivalent Circuit 7DM-3. Welding Machine, UPS General Description MagnaChip s IGBT Module 7DM-3 package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT Module series are

More information

AOKS40B65H1/AOTS40B65H1

AOKS40B65H1/AOTS40B65H1 AOKS4B5H/AOTS4B5H 5V, 4AAlpha IGBT TM General Description Latest AlphaIGBT (α IGBT) technology 5V breakdown voltage High efficient turn-on di/dt controllability Very high switching speed Low turn-off switching

More information

IGBT and SLLIMM. Technology evolution, Roadmaps and short term new products overview

IGBT and SLLIMM. Technology evolution, Roadmaps and short term new products overview IGBT and SLLIMM Technology evolution, Roadmaps and short term new products overview March 2012 IGBT Technology evolution, Roadmaps and short term new products overview 3 IGBTs technologies evolution Trench

More information

IRGBC20KD2-S PD Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRGBC20KD2-S PD Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT REOVERY DIODE Features Short circuit rated -µs @25, V GE = 5V Switching-loss rating includes all "tail" losses HEXFRED TM soft ultrafast diodes Optimized

More information

Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. A Collector current A. Continuous Tc=25 C 35. Tc=75 C 30.

Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. A Collector current A. Continuous Tc=25 C 35. Tc=75 C 30. 7MBRS14 IGBT Modules IGBT MODULE (S series) 14 / / PIM Features Low CE(sat) Compact Package P.C. Board Mount Module Converter Diode Bridge Dynamic Brake Circuit pplications Inverter for Motoe Drive C and

More information

Features. Description. Table 1. Device summary. Order code Marking Package Packaging. STGW60V60F GW60V60F TO-247 Tube

Features. Description. Table 1. Device summary. Order code Marking Package Packaging. STGW60V60F GW60V60F TO-247 Tube TO-247 1 2 3 6 V, 6 A very high speed trench gate field-stop IGBT Features Datasheet - production data Very high speed switching series Maximum junction temperature: T J = 175 C Tail-less switching off

More information

EMIPAK 2B PressFit Power Module 3-Levels Half Bridge Inverter Stage, 75 A

EMIPAK 2B PressFit Power Module 3-Levels Half Bridge Inverter Stage, 75 A EMIPAK B PressFit Power Module -Levels Half Bridge Inverter Stage, 75 A VS-ETF75Y6U EMIPAK B (package example) PRIMARY CHARACTERISTICS Q - Q IGBT STAGE V CES 6 V V CE(on) typical at I C = 75 A.7 V I C

More information

Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a TO-220FP package. Features. Description

Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a TO-220FP package. Features. Description Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a TO-220FP package Datasheet - production data Features 6 μs of short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 15 A Tight parameter

More information

RGW00TK65 650V 50A Field Stop Trench IGBT

RGW00TK65 650V 50A Field Stop Trench IGBT RGWTK65 65V 5A Field Stop Trench IGBT Outline V CES 65V TO-3PFM I C ( ) 26A V CE(sat) (Typ.).5V@I C =5A P D 89W ()(2)(3) Features ) Low Collector - Emitter Saturation Voltage 2) High Speed Switching 3)

More information

Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. Not recommend for new design. Continuous Tc=25 C

Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. Not recommend for new design. Continuous Tc=25 C 7MBRSC IGBT Modules PIM/Built-in converter with thyristor and brake (S series) / / PIM Features Low CE(sat) Compact Package P.C. Board Mount Module Converter Diode Bridge Dynamic Brake Circuit pplications

More information

Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. 1ms. 1 device. Continuous 1ms. 1 device

Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. 1ms. 1 device. Continuous 1ms. 1 device 7MBR3SC6 IGBT Modules PIM/Built-in converter with thyristor and brake (S series) 6 / 3 / PIM Features Low CE(sat) Compact Package P.C. Board Mount Module Converter Diode Bridge Dynamic Brake Circuit pplications

More information

IGBT SIP Module (Short Circuit Rated Ultrafast IGBT)

IGBT SIP Module (Short Circuit Rated Ultrafast IGBT) IGBT SIP Module (Short Circuit Rated Ultrafast IGBT) IMS-2 PRIMARY CHARACTERISTICS OUTPUT CURRENT IN A TYPICAL 20 khz MOTOR DRIVE V CES 600 V I RMS per phase (3. kw total) with T C = 90 C A RMS T J 25

More information

Industry standard 62mm IGBT module. IGBT chip. o Trench FS V-Series IGBT (Fuji 6 th gen) o low VCE(sat) value o 10 µs short circuit of 150 C

Industry standard 62mm IGBT module. IGBT chip. o Trench FS V-Series IGBT (Fuji 6 th gen) o low VCE(sat) value o 10 µs short circuit of 150 C Industry standard 62mm IGBT module MIAA-HB12FA-3N 12 V 3 A Chip features IGBT chip o Trench FS V-Series IGBT (Fuji 6 th gen) o low VCE(sat) value o 1 µs short circuit of 15 C o square RBSOA of 2xIC o low

More information

MBN1500FH45F Silicon N-channel IGBT 4500V F version

MBN1500FH45F Silicon N-channel IGBT 4500V F version Silicon N-channel IGBT 4500V F version Spec.No.IGBT-SP-15014 R7 P1 FEATURES Soft switching behavior, low switching loss & low conduction loss : Soft low-injection punch-through Advanced Trench High conductivity

More information

Industry standard 34mm IGBT module. o Trench FS V-Series IGBT (Fuji 6 th gen) o low VCE(sat) value o 10 µs short circuit of 150 C

Industry standard 34mm IGBT module. o Trench FS V-Series IGBT (Fuji 6 th gen) o low VCE(sat) value o 10 µs short circuit of 150 C Industry standard 34mm IGBT module MIFA-HB12FA-N Chip features IGBT chip o Trench FS V-Series IGBT (Fuji 6 th gen) o low VCE(sat) value o 1 µs short circuit of C o square RBSOA of 2xIC o low EMI FRD chip

More information

MPMD100B120RH NPT & Rugged Type 1200V IGBT Module. Features. conditioning. Applications. total losses. Equivalent Circuit 7DM-3. Welding Machine, UPS

MPMD100B120RH NPT & Rugged Type 1200V IGBT Module. Features. conditioning. Applications. total losses. Equivalent Circuit 7DM-3. Welding Machine, UPS General Description MagnaChip s IGBT Module 7DM3 package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT Module series are

More information

IGBT Highspeed5FASTIGBTinTRENCHSTOP TM 5technologycopackedwithRAPID1 fastandsoftantiparalleldiode

IGBT Highspeed5FASTIGBTinTRENCHSTOP TM 5technologycopackedwithRAPID1 fastandsoftantiparalleldiode IGBT Highspeed5FASTIGBTinTRENCHSTOP TM 5technologycopackedwithRAPID fastandsoftantiparalleldiode IKP4N65F5,IKW4N65F5 65VDuoPackIGBTandDiode Highspeedswitchingseriesfifthgeneration Datasheet IndustrialPowerControl

More information

Features. Description. Table 1: Device summary. Order code Marking Package Packing STGW10M65DF2 G10M65DF2 TO-247 Tube

Features. Description. Table 1: Device summary. Order code Marking Package Packing STGW10M65DF2 G10M65DF2 TO-247 Tube Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in TO-247 package Datasheet - production data 3 2 1 TO-247 Figure 1: Internal schematic diagram Features 6 µs of short-circuit withstand time

More information

V CE I C (T C =100 C) V CE(sat) (T C =25 C) 1.6V. Symbol. Symbol V GE I C I CM I LM 30 I F 15 I FM. t SC P D T J, T STG T L.

V CE I C (T C =100 C) V CE(sat) (T C =25 C) 1.6V. Symbol. Symbol V GE I C I CM I LM 30 I F 15 I FM. t SC P D T J, T STG T L. AOK5B6D 6V, 5A Alpha IGBT TM with Diode General Description The Alpha IGBT TM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability.

More information

STGB40V60F, STGP40V60F, STGW40V60F

STGB40V60F, STGP40V60F, STGW40V60F STGB40V60F, STGP40V60F, STGW40V60F 600 V, 40 A very high speed trench gate field-stop IGBT Datasheet - production data TAB 1 D 2 PAK 3 TAB 1 2 3 TO-247 Figure 1. Internal schematic diagram C or TAB TO-220

More information

Discrete 600V GenX3 XPT IGBTs IXAN0072

Discrete 600V GenX3 XPT IGBTs IXAN0072 Discrete 600V GenX3 XPT IGBTs IXAN0072 Abdus Sattar and Vladimir Tsukanov, Ph.D. IXYS Corporation 1590 Buckeye Drive Milpitas, California 95035 USA 1. Introduction Engineers who design power conversion

More information

V CE I C (T C =100 C) V CE(sat) (T C =25 C) 1.85V. Symbol. V ±20 V 500ns 24 V V GE V SPIKE I C I CM I LM I F 30 I FM. t SC P D T J, T STG T L

V CE I C (T C =100 C) V CE(sat) (T C =25 C) 1.85V. Symbol. V ±20 V 500ns 24 V V GE V SPIKE I C I CM I LM I F 30 I FM. t SC P D T J, T STG T L AOKBD V, A Alpha IGBT TM with Diode General Description The Alpha IGBT TM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They

More information

EMIPAK 2B PressFit Power Module 3-Levels Half Bridge Inverter Stage, 150 A

EMIPAK 2B PressFit Power Module 3-Levels Half Bridge Inverter Stage, 150 A EMIPAK B PressFit Power Module -Levels Half Bridge Inverter Stage, 5 A VS-ETF5Y5N EMIPAK-B (package example) PRIMARY CHARACTERISTICS Q to Q IGBT V CES 5 V V CE(on) typical at I C = 5 A.7 V I C at T C =

More information

SG200-12CS2 200A1200V IGBT Module

SG200-12CS2 200A1200V IGBT Module Typical applications: AC and DC electric motor control Frequency transformer UPS Industry power supply Electric welding machine Characteristics: SPT chip (soft-punch-through) MOS input control Ultra thin

More information

STGW40V60DF STGWT40V60DF

STGW40V60DF STGWT40V60DF STGW4V6DF STGWT4V6DF 6 V, 4 A very high speed trench gate field-stop IGBT Datasheet - production data Features TAB Maximum junction temperature: T J = 175 C Very high speed switching series Tail-less switching

More information

MBN1800F33F Silicon N-channel IGBT 3300V F version

MBN1800F33F Silicon N-channel IGBT 3300V F version Silicon N-channel IGBT V F version Spec.No.IGBT-SP-8 R8 P FEATURES Soft switching behavior, low switching loss & low conduction loss : Soft low-injection punch-through Advanced Trench High conductivity

More information

IRGB6B60KD IRGS6B60KD IRGSL6B60KD

IRGB6B60KD IRGS6B60KD IRGSL6B60KD PD - 93E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. µs Short Circuit Capability. Square RBSOA. Ultrasoft

More information

Symbol Parameters Test Conditions Min Typ Max Unit T J max. Max. Junction Temperature 150 C T J op. Operating Temperature C T stg

Symbol Parameters Test Conditions Min Typ Max Unit T J max. Max. Junction Temperature 150 C T J op. Operating Temperature C T stg V 15A Module RoHS Features High level of integration only one power semiconductor module required for the whole drive Low saturation voltage and positive temperature coefficient Fast switching and short

More information

V CE I C (T C =100 C) V CE(sat) (T C =25 C) 2.0V. Symbol

V CE I C (T C =100 C) V CE(sat) (T C =25 C) 2.0V. Symbol AOKS3BD V, 3A Alpha IGBT TM General Description Latest Alpha IGBT (α IGBT) technology High efficient turn-on di/dt controllability Very high switching speed Low turn-off switching loss and softness Very

More information

Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=100 C 50

Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=100 C 50 IGBT MODULE (V series) 12V / A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor Drive

More information

CP15TD1-24A. DIP-CIB 3Ø Converter + 3Ø Inverter + Brake 15 Amperes/1200 Volts

CP15TD1-24A. DIP-CIB 3Ø Converter + 3Ø Inverter + Brake 15 Amperes/1200 Volts Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 2.68±.1 68.±.3 B 1.73±.2 44.±.5 C.58±.4 14.7±.1 D 3.1±.2 79.±.5 E 2.83 72. F.16±.1 4.±.3 G 2.83±.1 72.±.3 H.7 2. J.2±.8 5.±.2 K.87 22.

More information

MIDA-HB12FA-600N IGBT module datasheet

MIDA-HB12FA-600N IGBT module datasheet Low Inductance IGBT Module with 17 mm Height Housing 1 V A Chip features IGBT chip o Trench FS V-Series IGBT (Fuji 6 th gen) o low VCE(sat) value o µs short circuit duration at 15 C o square RBSOA of 2xIC

More information

Industry standard 34mm IGBT module. o Trench FS V-Series IGBT (Fuji 6 th gen) o low VCE(sat) value o 10 µs short circuit of 150 C

Industry standard 34mm IGBT module. o Trench FS V-Series IGBT (Fuji 6 th gen) o low VCE(sat) value o 10 µs short circuit of 150 C Industry standard 34mm IGBT module MIFA-HB12FA-1N Chip features IGBT chip o Trench FS V-Series IGBT (Fuji 6 th gen) o low VCE(sat) value o 1 µs short circuit of 15 C o square RBSOA of 2xIC o low EMI FRD

More information

10 A, 600 V short-circuit rugged IGBT

10 A, 600 V short-circuit rugged IGBT 10 A, 600 V short-circuit rugged IGBT Datasheet - production data Features Lower on voltage drop (VCE(sat)) Lower CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel

More information

IGB03N120H2. HighSpeed 2-Technology. Power Semiconductors 1 Rev. 2.4 Oct. 07

IGB03N120H2. HighSpeed 2-Technology. Power Semiconductors 1 Rev. 2.4 Oct. 07 HighSpeed 2-Technology Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners 2 nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant

More information

STGW60V60DF STGWT60V60DF

STGW60V60DF STGWT60V60DF 1 2 3 TO-247 TO-3P 2 1 Figure 1. Internal schematic diagram 3 STGW6V6DF STGWT6V6DF 6 V, 6 A very high speed trench gate field-stop IGBT Features Datasheet - production data Very high speed switching series

More information

Features. Symbol Description FGA25N120AND Units V CES Collector-Emitter Voltage 1200 V V GES Gate-Emitter Voltage ± 20 V Collector T

Features. Symbol Description FGA25N120AND Units V CES Collector-Emitter Voltage 1200 V V GES Gate-Emitter Voltage ± 20 V Collector T FGA25N2AND General Description Employing NPT technology, Fairchild s AND series of IGBTs provides low conduction and switching losses. The AND series offers an solution for application such as induction

More information

n-channel Features 1 TO-247AD Pulse Collector CurrentÃc 82 I LM

n-channel Features   1 TO-247AD Pulse Collector CurrentÃc 82 I LM INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFRED TM ultrafast

More information

STGW80H65DFB, STGWT80H65DFB

STGW80H65DFB, STGWT80H65DFB STGW80H65DFB, STGWT80H65DFB Trench gate fieldstop IGBT, HB series 650 V, 80 A high speed Datasheet production data TAB 3 2 1 TO247 TO3P Figure 1: Internal schematic diagram 1 3 2 Features Maximum junction

More information