600 V IL V IL4108 Zero Voltage Crossing Detector Triac Optocoupler

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1 FEATURES High Input Sensitivity I FT =.0 ma, PF=.0 I FT =.0 ma, PF.0 00 ma On-State Current Zero Voltage Crossing Detector 00/800 V Blocking Voltage High Static dv/dt 0 kv/µs Inverse Parallel SCRs Provide Commutating dv/dt >0 kv/µs Very Low Leakage <0 µa Isolation Test Voltage from Double Molded Package, 00 V RMS Small -Pin DIP Package Underwriters Lab File #E744 V VDE Approval #0884 Available with Option D E Maximum Ratings Emitter Reverse Voltage....0 V Forward Current... 0 ma Surge Current.... A Power Dissipation mw Derate from C.... mw/ C Detector Peak Off-State Voltage IL V IL V RMS On-State Current ma Single Cycle Surge Current....0 A Total Power Dissipation mw Derate from C.... mw/ C Package Isolation Test Voltage (between emitter and detector, climate per DIN 0044, part, Nov. 74, t=.0 min.) V RMS Pollution Degree (DIN VDE 009)... Creepage Distance mm Clearance mm Comparative Tracking Index per DIN IEC /VDE 00 part, Group IIIa per DIN VDE Isolation Resistance V IO =00 V, T A = C... 0 Ω V IO =00 V, T A =00 C... 0 Ω Storage Temperature Range... C to +0 C Ambient Temperature Range... C to +00 C Soldering Temperature (max. 0 sec. dip soldering 0. mm from case bottom)... 0 C Dimensions in inches (mm).48 (.0). (.0).09 (.00) Min. 4 typ..08 (0.4).00 (0.) DESCRIPTION 00 V IL V IL408 Zero Voltage Crossing Detector Triac Optocoupler 4. (8.0).4 (8.70) pin one ID LED Anode LED Cathode.048 (.).0 (.).0 (.0).0 (.8).0 (0.84) typ. 9.0 (0.84) typ..00 (.4) typ..00 (7.) typ..008 (.0).0 (.0) (7. 8.8).0 (.0).0 (.8) The IL40/408 consists of a GaAs IRLED optically coupled to a photosensitive zero crossing TRIAC network. The TRIAC consists of two inverse parallel connected monolithic SCRs. These three semiconductors are assembled in a six pin 0. inch dual in-line package, using high insulation double molded, over/under leadframe construction. High input sensitivity is achieved by using an emitter follower phototransistor and a cascaded SCR predriver resulting in an LED trigger current of less than.0 ma (DC). The IL40/408 uses two discrete SCRs resulting in a commutating dv/dt greater than 0 kv/µs. The use of a proprietary dv/dt clamp results in a static dv/dt of greater than 0 kv/µs. This clamp circuit has a MOSFET that is enhanced when high dv/dt spikes occur between MT and MT of the TRIAC. When conducting, the FET clamps the base of the phototransistor, disabling the first stage SCR predriver. The zero cross line voltage detection circuit consists of two enhancement MOSFETS and a photodiode. The inhibit voltage of the network is determined by the enhancement voltage of the N-channel FET. The P- channel FET is enabled by a photocurrent source that permits the FET to conduct the main voltage to gate on the N-channel FET. Once the main voltage can enable the N-channel, it clamps the base of the phototransistor, disabling the first stage SCR predriver. The 00/800 V blocking voltage permits control of off-line voltages up to 40 VAC, with a safety factor of more than two, and is sufficient for as much as 80 VAC. The IL40/408 isolates low-voltage logic from 0, 40, and 80 VAC lines to control resistive, inductive, or capacitive loads including motors, solenoids, high current thyristors or TRIAC and relays. Applications include solid-state relays, industrial controls, office equipment, and consumer appliances. NC ZCC* 4 Triac MT *Zero Crossing Circuit 8 Triac MT Substrate do not connect 00 Infineon Technologies Corp. Optoelectronics Division San Jose, CA 4 March 7, 000-

2 Characteristics Parameter Symbol Min. Typ. Max. Unit Condition Emitter Forward Voltage V F.. V I F =0 ma Reverse Current I R 0. 0 µa V R =.0 V Capacitance C 0 pf V F =0 V, f=.0 MHz Thermal Resistance, Junction to Ambient R THJA 70 K/W Detector Off-State Voltage IL40 V D(RMS) V I D(RMS) =70 µa IL408 Repetitive Peak Off-State Voltage IL40 V DRM 00 V I DRM =00 µa IL Off-State Current I D(RMS) 0 00 µa V D =V DRM, T A =00 C, I F =0 ma Off State Current I D(RMS) 00 V D =V DRM, I F =Rated I FT On-State Voltage V TM.7.0 V I T =00 ma On State Current I TM 00 ma PF=.0, V T(RMS) =.7 V Surge (Non-Repetitive), I TSM.0 A f=0 Hz On-State Current Trigger Current I FT.0 ma V D =.0 V Trigger Current I FT.0 V OP =0 V, f=0 Hz, T j =00 C, t pf >0 ms Trigger Current Temp. Gradient I FT T j µa/k I FT T j Inhibit Voltage Temp. Gradient V DINH T j 0 mv/k Off-State Current in Inhibit State I DINH 0 00 µa I F =I FT, V DRM Holding Current I H 00 µa Latching Current I L.0 ma V T =. V Zero Cross Inhibit Voltage V IH V I F =Rated I FT Turn-On Time t ON µs V RM =V DM =V D(RMS) Turn-Off Time t OFF 0 µs PF=.0, I T =00 ma Critical Rate of Rise of Off-State dv/dt cr 0000 V/µs V D =0.7 V DRM, T j = C Voltage 000 V D =0.7 V DRM, T j =80 C Critical Rate of Rise of Voltage at Current Commutation dv/dt crq 0000 V/µs V D =0.7 V DRM, di/dt crq A/ms T j = C dv/dt crq 000 V D =0.7 V DRM, di/dt crq A/ms, T j =80 C Critical Rate of Rise of On-State di/dt cr 8.0 A/µs Current Thermal Resistance, Junction to Ambient R THJA 0 K/W Package Critical Rate of Rise of Coupled Input/Output Voltage dv (IO) /dt 0000 V/µs I T =0 A, V RM =V DM =V D(RMS) Common Mode Coupling Capacitor C CM 0.0 pf Packing Capacitance C IO 0.8 pf f=.0 MHz, V IO =0 V Isolation Resistance R is 0 Ω V IO =00 V, T A = C R is 0 V IO =00 V, T A =+00 C 00 Infineon Technologies Corp. Optoelectronics Division San Jose, CA IL40/408 4 March 7, 000-

3 Power Factor Considerations A snubber isn t needed to eliminate false operation of the TRIAC driver because of the IL40/408 s high static and commutating dv/dt with loads between.0 and 0.8 power factors. When inductive loads with power factors less than 0.8 are being driven, include a RC snubber or a single capacitor directly across the device to damp the peak commutating dv/ dt spike. Normally a commutating dv/dt causes a turning-off device to stay on due to the stored energy remaining in the turning-off device. But in the case of a zero voltage crossing optotriac, the commutating dv/dt spikes can inhibit one half of the TRIAC from turning on. If the spike potential exceeds the inhibit voltage of the zero cross detection circuit, half of the TRIAC will be heldoff and not turn-on. This hold-off condition can be eliminated by using a snubber or capacitor placed directly across the optotriac as shown in Figure. Note that the value of the capacitor increases as a function of the load current. Figure. Shunt capacitance versus load current Cs(µF)= 0.00(µF)* 0^(0.00IL(mA)) Cs - Shunt Capacitance - µf Ta = C, PF = 0. IF =.0mA IL - Load Current - ma(rms) The hold-off condition also can be eliminated by providing a higher level of LED drive current. The higher LED drive provides a larger photocurrent which causes the phototransistor to turn-on before the commutating spike has activated the zero cross network. Figure shows the relationship of the LED drive for power factors of less than.0. The curve shows that if a device requires. ma for a resistive load, then.8 times (.7 ma) that amount would be required to control an inductive load whose power factor is less than 0.. Figure. Normalized LED trigger current versus power factor NIFth - Normalized LED Trigger Current IFth Normalized to PF =.0 Ta = C PF - Power Factor.0 Figure. Forward voltage versus forward current VF - Forward Voltage - V Ta = - C Ta = C Ta = 8 C 0 IF - Forward Current - ma Figure 4. Peak LED current versus duty factor, Tau If(pk) - Peak LED Current - ma Duty Factor τ t τ DF = /t t - LED Pulse Duration - s 00 Infineon Technologies Corp. Optoelectronics Division San Jose, CA IL40/ March 7, 000-

4 Figure. Maximum LED power dissipation P LED - LED Power - mw Figure 8. Current reduction I TRMS =f(t PIN ), R thj PIN =. K/W Thermocouple measurement must be performed potentially separated to A and A. Measuring junction as near as possible at the case Ta - Ambient Temperature - C Figure. Typical output characteristics I T = f(v T ), parameter: T j Figure 9. Typical trigger delay time t gd =f (I F I FT C ), V D =00 V, f=40 to 0 Hz, parameter: T j Figure 7. Current reduction I TRMS =f(t A ), R thja =0 K/W Device switch soldered in pcb or base plate. Figure 0. Typical inhibit current I DINH =f(i F /I FT C ) V D =00 V, parameter: T j 00 Infineon Technologies Corp. Optoelectronics Division San Jose, CA IL40/408 4 March 7, 000-

5 Figure. Power dissipation 40 to 0 Hz line operation, P tot =f(i TRMS ) Current commutation: The values 00 A/ms with following peak reverse recovery current >80 ma should not be exceeded. Avoiding high-frequency turn-off current oscillations: This effect can occur when switching a circuit. Current oscillations which appear essentially with inductive loads of a higher winding capacity result in current commutation and can generate a relatively high peak reverse recovery current. The following alternating protective measures are recommended for the individual operating states: Apply a capacitor to the supply pins at the load-side. 0. µf 0 V~ 4 Figure. Typical static inhibit voltage limit V DINHmin = f(i F /I FT C), parameter: T j Device zero voltage switch can be triggered only in hatched area below Tj curves. Connect a series resistor to the IL40/408 output and bridge both by a capacitor. Ω nf 0 V~ 4 Connect a choke of low winding capacity in series, e.g., a ringcore choke, with higher load currents. 00 µh nf 0 V~ 4 Note: Measures to are especially required for the load separated from the IL40/408 during operation. The above mentioned effects do not occur with IL40/IL408 circuits which are connected to the line by transformers and which are not mechanically interrupted. In such cases as well as in applications with a resistive load the corresponding protective circuits can be neglected. 00 Infineon Technologies Corp. Optoelectronics Division San Jose, CA IL40/408 4 March 7, 000-

6 Technical Information Commutating Behavior The use of a triac at the output creates difficulties in commutation due to both the built-in coupled thyristor systems. The triac can remain conducting by parasitic triggering after turning off the control current. However, if the IL40/408 is equipped with two separate thyristor chips featuring high dv/dt strength, no RC circuit is needed in case of commutation. Control And Turn-On Behavior The trigger current of the IL40/408 has a positive temperature gradient. The time which expires from applying the control current to the turn-on of the load current is defined as the trigger delay time (t gd ). On the whole this is a function of the overdrive meaning the ratio of the applied control current versus the trigger current (I F /I FT ). If the value of the control current corresponds to that of the individual trigger current of IL40/408 turn-on delay times amounts to a few milliseconds only. The shortest times of.0 to 0 µs can be achieved for an overdrive greater or equal than 0. The trigger delay time rises with an increase in temperature. For very short control current pulses (t plf <00 µs) a correspondingly higher control current must be used. Only the IL40/408 without zero voltage switch is suitable for this operating mode. Zero Voltage Switch The IL40/408 with zero voltage switch can only be triggered during the zero crossing the sine AC voltage. This prevents current spikes, e.g. when turning-on cold lamps or capacitive loads. Applications Direct switching operation: The IL40/408 switch is mainly suited to control synchronous motors, valves, relays and solenoids in Grätz circuits. Due to the low latching current (00 µa) and the lack of an RC circuit at the output, very low load currents can easily be switched. Indirect switching operation: The IL40/408 switch acts here as a driver and thus enables the driving of thyristors and triacs of higher performance by microprocessors. The driving current pulse should not exceed the maximum permissible surge current of the IL40/408. For this reason, the IL40/408 without zero voltage switch often requires current limiting by a series resistor. The favorably low latching current in this operating mode results in AC current switches which can handle load currents from some milliamperes up to high currents. Application Note Over voltage protection: A voltage-limiting varistor (e.g. SIO VS0K0) which directly connected to the IL40/408 can protect the component against overvoltage. 00 Infineon Technologies Corp. Optoelectronics Division San Jose, CA IL40/ March 7, 000-