IGBT and SLLIMM. Technology evolution, Roadmaps and short term new products overview
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1 IGBT and SLLIMM Technology evolution, Roadmaps and short term new products overview March 2012
2 IGBT Technology evolution, Roadmaps and short term new products overview
3 3 IGBTs technologies evolution Trench Gate Field Stop IGBT suitable for high voltage and high current applications Technology Milestones emitter p++ n+ gate Implanted Back Emitter Implanted Field Stop Trench Gate Thin wafer thickness p- Features n- n p Low E OFF due to improved minority carrier recombination Positive Temperature coefficient in V CE(sat) resulting in a safer paralleling operation Low V CE(sat) High switching robusteness (Large SOA) collector
4 4 IGBTs technologies evolution in R TH Punch Through emitter p++ n+ p- n- gate 410 µm 280 µm n+ p+ substrate 80µm (650V) Field Stop emitter gate p++ n+ p- collector n- Reduced Thermal Resistance (R TH ) -25% n p collector
5 7 IGBT Technology Roadmaps: 650V Trench Gate Field Stop STGW25H120DF 1200V for High Frequency Q3 Maturity 30 emitter p++ n+ p- n- n p collector gate STG99K120F2 1200V for Motor Control Q4 STGW60H65F 650V for High Frequency 1350V IRD for IH Q1 MAT 30 STG100H65F2 650V for Motor Control Q
6 8 1200V IGBT High Frequency series Technology Vehicle STGW25H120DF Preliminary Results (on packaged parts) Symbol Characteristic Typical Value 25 C 150 C Unit BV CES Collector to Emitter breakdown voltage 1200 V V CESAT V GE = 15V, I C = 25A V E OFF V CC =600V, V GE =15 0V, R GOFF =22Ω, I C =25A mj Product Features: IGBT in Trench Gate Field Stop Technology 1200V at T C = 25 C Final die thickness: 110µm Very low R TH Positive derating of V CE(sat) Tailored for High speed switching application Simulated benchmark based on datasheet values Topology: Full Bridge Main Specs: P Out =3kW, f Sw =20kHz, D Max =90%, Î Out 20A, T j =125ºC Device (Trench FS) I C (nom) P Con (W) P Sw (W) P Tot (W) (*) STGW25H120DF 100 C Competitor C Competitor C Competitor C (*) switching-on power losses have been neglected for all the devices under benchmark, since they basically depend of co-packaged diode
7 9 650V IGBT High Frequency series Technology Vehicle STGW60H65DF Final Results (on packaged parts) Symbol Characteristic Typical Value 25 C 150 C Unit BV CES Collector to Emitter breakdown voltage 650 V V CESAT V GE = 15V, I C =60A V E OFF V CC = 400V, V GE = 15V 0, R G = 10Ω, I C = 60A mj Product Features: IGBT in Trench Gate Field Stop Technology 650V at T C = 25 C Final die thickness: 80µm Very low R TH Positive derating of V CE(sat) Tailored for High speed switching application Simulated benchmark based on datasheet values Topology: Full Bridge Main Specs: P out =5kW, f sw =16kHz, D Max =90%, Î Out 30A, T J =150ºC Device (Trench FS) I C (nom) P Con (W) P Sw (W) P Tot (W) (*) STGW60H65DF 100 C Competitor C Competitor C Competitor C (*) switching-on power losses have been neglected for all the devices under benchmark, since they basically depend of co-packaged diode
8 Short Term Product Plan of Discrete IGBT PN BV CES 25 C) I C (@ 100 C) Package Applic. Samples emitter gate p++ n+ p- n- n p collector STGW15H120DF 1200 V 15 A TO-247 UPS, PFC, PV Oct 12 STGW25H120DF 1200 V 25 A TO-247 UPS, PFC, PV May 12 STGW40H120DF 1200 V 40 A TO-247 UPS, PFC, PV Nov 12 STGW40H65DF 650 V 40 A TO-247 PV, MC Oct 12 STGW60H65F 650 V 60 A TO-247 PV, MC Production STGW60H65DF 650 V 60 A TO-247 PV, MC Available STGW60H65DRF 650 V 60 A TO-247 UPS, PFC, PV Available STGW80H65DF 650 V 80 A TO-247 PV, MC Jul 12 STGP20H60DF 600 V 20 A TO -220 PV, MC Jul 12 STGP30H60DF 600 V 30 A TO-220 PV, MC Jun 12 STGW50H60DLT 600 V 50 A TO-247 IH, SMPS Mar 12 STGW40H60DLF 600V 40 A TO-247 IH, UPS, PFC Oct 12 STGW50H60DF 600 V 50 A TO-247 UPS, PFC, MC Production Jan
9 SLLIMM family Technology evolution & Roadmap
10 14 Three years SLLIMM roadmap SLLIMM-25L SLLIMM-38L SLLIMM-nano SLLIMM-Full Molded SMIP-26L SLLIMM-nano SDIP-25L SDIP-38L NDIP-26L FDIP-25L Already available In feasability study
11 15 SLLIMM Features & Benefit Benefits High quality and Reliability Tj = from -40ºC to 150ºC Advanced protection function Improved efficiency Reduce EMI and noise Reduce total system cost Easy Layout Main features and integrated functions SLLIMM-nano (max 300W): STGIPN3H60A/ STGIPN3H60 : 3A, 600V, 26 leads (Full Molded) SLLIMM: STGIPS10K60T: 10A, 600V, 25 leads (DBC + NTC + SD) STGIPS14K60T: 14A, 600V, 25 leads (DBC + NTC + SD) STGIPL20K60: 20A, 600V, 38 leads (DBC +NTC + SD + SSD+ Op Amps) Main Applications General purpose Low power motor drives Washing machine Dish washers Compressor drives Refrigerators Sewing machines Pumps Tools Fans Rehabilitation and fitness applications
12 SLLIMM Power Coverage Target: To complete the product portfolio for 3Φ BLDC motors in W power rating with a proper technical competitive solution SLLIMM-DBC SLLIMM-Full Molded In feasability study 700W 2KW 200W 700W SLLIMM-nano up to 150W Main Applications Compressors for Fridge BLDC outdoor Fan Medium Power Inverters in HA ( i.e. Oven, Dryers) General Industrial Medium Power Drives 16
13 SLLIMM Single Leg: Modular Half-Bridge IPM Target: A complete leg (high side and low side high power switches) including the relative driving in a SLLIMM package for a modular approach It includes several innovative features: Modular and expandable solution Better Thermal behavior than a complete six-pack solution in a unique molded module More flexible customer board design Several smart functions embedded Silicon options offered for both PFC (W) and Motor Control (K) PN ( * ) 25 C 25 C Features NTC Package STGIPS35K60L1 600 V 35 A L6390 based Y SDIP 22L STGIPS40W60L1 600 V 40 A L6390 based Y SDIP 22L (*) Samples available. MAT 21 18
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IGBT ECONO3 Module, 100 A
IGBT ECONO3 Module, A VS-GBYGNT ECONO 3 4 pack PRIMARY CHARACTERISTICS V CES V V CE(on) typ. at A 3.52 V I C(DC) at T C = 64 C A Package ECONO 3 Circuit configuration 4 pack with thermistor FEATURES Gen
Symbol Description GD200CLT120C2S Units V CES Collector-Emitter Voltage 1200 V V GES Gate-Emitter Voltage ±20V V
STARPOWER SEMICONDUCTOR TM IGBT Preliminary Molding Type Module 1200V/200A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.
RGW00TK65 650V 50A Field Stop Trench IGBT
RGWTK65 65V 5A Field Stop Trench IGBT Outline V CES 65V TO-3PFM I C ( ) 26A V CE(sat) (Typ.).5V@I C =5A P D 89W ()(2)(3) Features ) Low Collector - Emitter Saturation Voltage 2) High Speed Switching 3)
Industry standard 34mm IGBT module. o Trench FS V-Series IGBT (Fuji 6 th gen) o low VCE(sat) value o 10 µs short circuit of 150 C
Industry standard 34mm IGBT module MIFA-HB12FA-N Chip features IGBT chip o Trench FS V-Series IGBT (Fuji 6 th gen) o low VCE(sat) value o 1 µs short circuit of C o square RBSOA of 2xIC o low EMI FRD chip
Industry standard 62mm IGBT module. IGBT chip. o Trench FS V-Series IGBT (Fuji 6 th gen) o low VCE(sat) value o 10 µs short circuit of 150 C
Industry standard 62mm IGBT module MIAA-HB12FA-3N 12 V 3 A Chip features IGBT chip o Trench FS V-Series IGBT (Fuji 6 th gen) o low VCE(sat) value o 1 µs short circuit of 15 C o square RBSOA of 2xIC o low
Chapter 1. Product Outline
Chapter 1 Product Outline Contents Page 1. Introduction... 1-2 2. Product line-up... 1-4 3. Definition of Type Name and Marking Spec... 1-5 4. Package outline dimensions... 1-6 5. bsolute Maximum Ratings...
V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.94V. Symbol V GE I C I CM I LM I F 30 I FM. t SC P D T L. R θ JA R θ JC
AOKB5M 5V, A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (α IGBT) technology 5V breakdown voltage Very fast and soft recovery freewheeling diode High
SKM200GAH123DKL 1200V 200A CHOPPER Module August 2011 PRELIMINARY RoHS Compliant
SKM2GAH123DKL 12V 2A CHOPPER Module August 211 PRELIMINARY RoHS Compliant FEATURES Ultra Low Loss High Ruggedness High Short Circuit Capability V CE(sat) With Positive Temperature Coefficient With Fast
Obsolete Product(s) - Obsolete Product(s)
40 A - 600 V - ultra fast IGBT Features Low C RES / C IES ratio (no cross conduction susceptibility) IGBT co-packaged with ultra fast free-wheeling diode High frequency operation Applicatio High frequency
Discrete 600V GenX3 XPT IGBTs IXAN0072
Discrete 600V GenX3 XPT IGBTs IXAN0072 Abdus Sattar and Vladimir Tsukanov, Ph.D. IXYS Corporation 1590 Buckeye Drive Milpitas, California 95035 USA 1. Introduction Engineers who design power conversion
10-PZ126PA080ME-M909F18Y. Maximum Ratings
flow3xphase-sic 12V/8mΩ Features SiC-Power MOSFET s and Schottky Diodes 3 phase inverter topology with split output Improved switching behavior (reduced turn on energy and X-conduction) Ultra Low Inductance
Motion-SPM. FSB50250UD Smart Power Module (SPM ) General Description. Features. Absolute Maximum Ratings. Symbol Parameter Conditions Rating Units
FSB50250UD Smart Power Module (SPM ) Features 500V R DS(on) =4.2W(max) 3-phase FRFET inverter including high voltage integrated circuit (HVIC) 3 divided negative dc-link terminals for inverter current
STGW60H65DFB, STGWA60H65DFB STGWT60H65DFB
STGW60H65DFB, STGWA60H65DFB STGWT60H65DFB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Datasheet - production data Features TAB Maximum junction temperature: T J = 175 C High speed switching
Insulated Gate Bipolar Transistor Trench PT IGBT, 600 V, 250 A
VS-GP5SA6S Insulated Gate Bipolar Transistor Trench PT IGBT, 6 V, 5 A Proprietary Vishay IGBT Silicon L Series SOT-7 PRIMARY CHARACTERISTICS V CES 6 V I C DC () 39 A at 9 C V CE(on) typical at A, 5 C.
V CE I C (T C =100 C) V CE(sat) (T C =25 C) 2.0V. Symbol
AOKS3BD V, 3A Alpha IGBT TM General Description Latest Alpha IGBT (α IGBT) technology High efficient turn-on di/dt controllability Very high switching speed Low turn-off switching loss and softness Very
STGW40H120DF2, STGWA40H120DF2
STGW4H12DF2, STGWA4H12DF2 Trench gate field-stop IGBT, H series 12 V, 4 A high speed Datasheet - production data Features Maximum junction temperature: TJ = 175 C High speed switching series Minimized
RGTH80TS65 650V 40A Field Stop Trench IGBT
65V A Field Stop Trench IGBT Datasheet Outline V CES 65V TO-247N I C( C) A V CE(sat) (Typ.).6V P D 234W ()(2)(3) Features ) Low Collector - Emitter Saturation Voltage 2) High Speed Switching 3) Low Switching
USING F-SERIES IGBT MODULES
.0 Introduction Mitsubishi s new F-series IGBTs represent a significant advance over previous IGBT generations in terms of total power losses. The device remains fundamentally the same as a conventional
Automotive-grade 650 V, 200 A trench gate field-stop M series IGBT die in D8 packing. Features. Description. Table 1: Device summary
Automotive-grade 650 V, 200 A trench gate field-stop M series IGBT die in D8 packing Datasheet - production data Features AEC-Q101 qualified Low-loss series IGBT Low VCE(sat) = 1.55 V (typ.) at IC = 200
RGTVX6TS65 650V 80A Field Stop Trench IGBT
65V 8A Field Stop Trench IGBT Outline V CES 65V TO-247N I C( C) 8A V CE(sat) (Typ.).5V P D 44W ()(2)(3) Features ) Low Collector - Emitter Saturation Voltage 2) High Speed Switching & Low Switching Loss
Full Bridge IGBT MTP (Ultrafast NPT IGBT), 20 A
VSMTUFAPbF Full Bridge IGBT MTP (Ultrafast NPT IGBT), A FEATURES Ultrafast non punch through (NPT) technology Positive V CE(on) temperature coefficient μs short circuit capability HEXFRED antiparallel
High-power IGBT Modules
High-power IGBT Modules Takashi Nishimura Yoshikazu Takamiya Osamu Nakajima 1. Introduction To help curb global warming, clean energy, rather than fossil fuels, has been used increasingly in recent years.
Industry standard 34mm IGBT module. o Trench FS V-Series IGBT (Fuji 6 th gen) o low VCE(sat) value o 10 µs short circuit of 150 C
Industry standard 34mm IGBT module MIFA-HB12FA-1N Chip features IGBT chip o Trench FS V-Series IGBT (Fuji 6 th gen) o low VCE(sat) value o 1 µs short circuit of 15 C o square RBSOA of 2xIC o low EMI FRD
Silicon FS Trench IGBT BT40T60 ANFU
Silicon FS Trench IGBT BT40T60 ANFU General Description: Using HUAJING's proprietary trench design and advanced Field Stop (FS) technology, offering superior conduction and switching performances. V CES