562 Author s Biography

Transcription

1 Author s Biography Professor Baliga is internationally recognized for his leadership in the area of power semiconductor devices. In addition to over 500 publications in international journals and conference digests, he has authored and edited 16 books (Power Transistors, IEEE Press 1984; Epitaxial Silicon Technology, Academic Press 1986; Modern Power Devices, John Wiley 1987; High Voltage Integrated Circuits, IEEE Press 1988; Solution Manual: Modern Power Devices, John Wiley 1988; Proceedings of the 3rd Int. Symposium on Power Devices and ICs, IEEE Press 1991; Modern Power Devices, Krieger Publishing Co. 1992; Proceedings of the 5th Int. Symposium on Power Devices and ICs, IEEE Press 1993; B.J. Baliga, Advanced High Voltage Power Device Concepts, DOI / , # Springer Science+Business Media, LLC

2 562 Author s Biography Power Semiconductor Devices; PWS Publishing Company 1995; Solution Manual: Power Semiconductor Devices; PWS Publishing Company 1996; Cryogenic Operation of Power Devices, Kluwer Press 1998; Silicon RF Power MOSFETs, World Scientific Publishing Company 2005; Silicon Carbide Power Devices, World Scientific Publishing Company 2006; Fundamentals of Power Semiconductor Devices, Springer Science, 2008; Solution Manual: Fundamentals of Power Semiconductor Devices, Springer Science, 2008; Advanced Power Rectifier Concepts, Springer Science, In addition, he has contributed chapters to another 20 books. He holds 120 U.S. Patents in the solid-state area. In 1995, one of his inventions was selected for the B.F. Goodrich Collegiate Inventors Award presented at the Inventors Hall of Fame. Professor Baliga obtained his Bachelor of Technology degree in 1969 from the Indian Institute of Technology (I.I.T), Madras, India. He was the recipient of the Philips India Medal and the Special Merit Medal (as Valedictorian) at I.I.T, Madras. He obtained his Masters and Ph.D. degrees from Rensselaer Polytechnic Institute (R.P.I), Troy NY, in 1971 and 1974, respectively. His thesis work involved gallium arsenide diffusion mechanisms and pioneering work on the growth of InAs and GaInAs layers using organometallic CVD techniques. At R.P.I., he was the recipient of the IBM Fellowship in 1972 and the Allen B. Dumont Prize in From 1974 to 1988, Dr. Baliga performed research and directed a group of 40 scientists at the General Electric Research and Development Center in Schenectady, NY, in the area of power semiconductor devices and high voltage integrated circuits. During this time, he pioneered the concept of MOS-Bipolar functional integration to create a new family of discrete devices. He is the inventor of the insulated gate bipolar transistors (IGBT) which is now in production by many international semiconductor companies. This invention is widely used around the globe for air-conditioning, home appliance (washing machines, refrigerators, mixers, etc) control, factory automation (robotics), medical systems (CAT scanners, uninterruptible power supplies), and electric street-cars/bullet-trains, as well as for the drive-train in electric and hybrid-electric cars under development for reducing urban pollution. The U.S. Department of Energy has released a report that the variable speed motor drives enabled by IGBTs produce an energy savings of 2 quadrillion btus per year (equivalent to 70 GW of power). The widespread adoption of compact fluorescent lamps (CFLs) in place of incandescent lamps is producing an additional power savings of 30 GW. The cumulative impact of these energy savings on the environment is a reduction in carbon dioxide emissions from coal-fired power plants by over one trillion pounds per year. Most recently, the IGBT has enabled fabrication of very compact, light-weight, and inexpensive defibrillators used to resuscitate cardiac arrest victims. When installed in fire-trucks, paramedic vans, and on-board airlines, it is projected by the American Medical Association (AMA) to save 100,000 lives per year in the US. For this work, Scientific American magazine named him one of the eight heroes of the semiconductor revolution in their 1997 special issue commemorating the Solid-State Century. Dr. Baliga is also the originator of the concept of merging Schottky and p-n junction physics to create a new family of power rectifiers that are commercially

3 Author s Biography 563 available from various companies. In 1979, he theoretically demonstrated that the performance of power MOSFETs could be enhanced by several orders of magnitude by replacing silicon with other materials such as gallium arsenide and silicon carbide. This is forming the basis of a new generation of power devices in the twenty-first Century. In August 1988, Dr. Baliga joined the faculty of the Department of Electrical and Computer Engineering at North Carolina State University, Raleigh, North Carolina, as a Full Professor. At NCSU, in 1991 he established an international center called the Power Semiconductor Research Center (PSRC) for research in the area of power semiconductor devices and high voltage integrated circuits, and has served as its Founding Director. His research interests include the modeling of novel device concepts, device fabrication technology, and the investigation of the impact of new materials, such as GaAs and silicon carbide, on power devices. In 1997, in recognition of his contributions to NCSU, he was given the highest university faculty rank of Distinguished University Professor of Electrical Engineering. In 2008, Professor Baliga was a key member of an NCSU team partnered with four other universities that was successful in being granted an engineering research center from the National Science Foundation for the development of micro-grids that allow integration of renewable energy sources. Within this program, he is responsible for the fundamental sciences platform and the development of power devices from wide-band-gap semiconductors for utility applications. Professor Baliga has received numerous awards in recognition for his contributions to semiconductor devices. These include two IR 100 awards (1983, 1984), the Dushman and Coolidge Awards at GE (1983), and being selected among the 100 Brightest Young Scientists in America by Science Digest magazine (1984). He was elected Fellow of the IEEE in 1983 at the age of 35 for his contributions to power semiconductor devices. In 1984, he was given the Applied Sciences Award by the world famous sitar maestro Ravi Shankar at the Third Convention of Asians in North America. He received the 1991 IEEE William E. Newell Award, the highest honor given by the Power Electronics Society, followed by the 1993 IEEE Morris E. Liebman Award for his contributions to the emerging smart power technology. In 1992, he was the first recipient of the BSS Society s Pride of India Award. At the age of 45, he was elected as Foreign Affiliate to the prestigious National Academy of Engineering, and was one of only four citizens of India to have the honor at that time (converted to regular member in 2000 after taking U.S. Citizenship). In 1998, the University of North Carolina system selected him for the O. Max Gardner Award, which recognizes the faculty member among the 16 constituent universities who has made the greatest contribution to the welfare of the human race. In December 1998, he received the J.J. Ebers Award, the highest recognition given by the IEEE Electron Devices Society for his technical contributions to the solid-state area. In June 1999, he was honored at the Whitehall Palace in London with the IEEE Lamme Medal, one of the highest forms of recognition given by the IEEE Board of Governors, for his contributions to the development of an apparatus/technology of benefit to society. In April 2000, he was honored by his alma mater as a Distinguished Alumnus. In November 2000,

4 564 Author s Biography he received the R.J. Reynolds Tobacco Company Award for Excellence in Teaching, Research, and Extension for his contributions to the College of Engineering at North Carolina State University. In 1999, Prof. Baliga founded a company, Giant Semiconductor Corporation, with seed investment from Centennial Venture Partners, to acquire an exclusive license for his patented technology from North Carolina State University with the goal of bringing his NCSU inventions to the marketplace. A company, Micro-Ohm Corporation, subsequently formed by him in 1999, has been successful in licensing the GD-TMBS power rectifier technology to several major semiconductor companies for worldwide distribution. These devices have application in power supplies, battery chargers, and automotive electronics. In June 2000, Prof. Baliga founded another company, Silicon Wireless Corporation, to commercialize a novel super-linear silicon RF transistor that he invented for application in cellular basestations and grew it to 41 employees. This company (renamed Silicon Semiconductor Corporation) is located at Research Triangle Park, N.C. It received an investment of $10 million from Fairchild Semiconductor Corporation in December 2000 to co-develop and market this technology. Based upon his additional inventions, this company has also produced a new generation of power MOSFETs for delivering power to microprocessors in notebooks and servers. This technology was licensed by his company to Linear Technologies Corporation with transfer of the know-how and manufacturing process. Voltage regulator modules (VRMs) using his transistors are currently available in the market for powering microprocessor and graphics chips in laptops and servers.

5 Index A Abrupt junction, 10, 33, 48, 59 Active area, 289, 290 Adjustable speed motor drive, 11 Ambipolar diffusion coefficient, 498, 524 Ambipolar diffusion length, 34, 95, 498, 524 Anode, 4, 24, 59, 79, 157, 267, 327, 386, 438, 485 Antiparallel diode, 15 Applications, 1 4, 11 18, 21, 22, 33, 40, 51, 58, 76, 79, 80, 83, 95, 102, 151, 152, 192, 228, 232, 233, 238, 291, 294, 330, 336, 357, 378, 383, 385, 386, 388, 421, 432, 435, 437, 439, 440, 463, 480, 482, 485, 515, 537, 549, 550, , 563, 564 Automotive electronics, 2 Avalanche breakdown, 25, 26, 28, 29, 46, 60, 69, 82, 83, 85, 86, 139, 229, 232, 297, 298, , 434, 482, 549 B Baliga s power law, 6, 8 11 Band gap, 37, 235 Bipolar power devices, 235 Blocking characteristics, 27 33, 45 48, 59 63, 68 71, 81 87, 93, 94, , 153, 160, , , , , , , , , , , , , , , , Blocking voltage, 2, 23, 57, 79, 151, 235, 293, 385, 437, 485, 553 Body diode, 65 Boltzmann s constant, 238 Boron, 24 Breakdown voltage, 6, 25, 59, 82, 156, 237, 293, 397, 446, 496 Built-in potential, 242, 258, 273, 282, , 441, 442, 466, 467, 487, , , 513, 526 Bulk mobility, 242 C Carrier distribution, 33, 66, 95, 162, 307, 385, 448, 498 Catenary, 34, 37, 95, 98, 118, 410, 451, 504, 528 Cathode, 24, 58, 79, 387, 437, 486 Cell pitch, 166, 243 Chynoweth s law, 6 Computer power supply, 2 Conduction barrier, 235 Conductivity modulation, 34, 63, 71, 86, 95, 140, 166, 293, 298, 309, 311, 362, 373, 385 Contact resistance, 491, 500 Continuity equation, 108, 178 Critical electric field, 8 10, 82, 83, 237, 250, 257, 271, 281, 299, 306, 341, 362 Current constriction, 386 Current distribution, 23, 216, 261, 317, 318, 371, 372, 460, 506, 507, 513, 528, , 535 Current flow pattern, 240, 261, 459, 506, 512, 525, 532, 534 Current spreading, 43, 53, 239, 241, 242,

6 566 Index D Damage, 15 Deep levels, 299, 362 Defects, 76 Depletion region, 30, 33, 40, 48, 63, 71, 82, 83, 85, 87, 88, 90, 93, 104, 128, 142, 143, 153, 154, 156, 157, 161, 198, 224, 237, 244, 245, 297, 304, 323, 338, 340, 341, 360, 368, 388, 393, 399, 425, 439, 443, 474, 488, 493, 519, 520 Depletion width, 88, 89, 154, 155, 166, 242, 243, 258, 273, 282, 310, 323, 394, 444, 494, 520 Destructive failure, 80, 229 Diffusion coefficients, 24, 63, 71, 84, 85, 111, 114, 163, 296, 297, 359, 360, 401, 402, 498, 524 Displacement current, 323 Display drives, 1 Dopant ionization energy, 299, 362 Doping concentration, 7, 22, 58, 80, 152, 235, 293, 386, 438, 486 Doping profile, 24, 58, 87, 152, 253, 295, 386, 439, 493 Drift region, 5, 25, 57, 81, 153, 235, 293, 385, 438, 486, 554 Drift region conductivity, 34, 63, 72, 95, 139, 293, 294, 373, 385 Drift region resistance, 237, 243, 250 Duty cycle, , 132, 139, 147, , 200, 208, 220, 221, 228, 246, 268, 277, 278, 287, , 357, 381, 382, 422, 423, 432, 463, 479, 516, 517, 538, 547, 560 E Edge, 24, 40, 171, 173, 174, 236, 241, 245, 255, 271, 280, 304, 320, 322, 411, 532 Edge termination, 25, 251, 269, 278 Electric field, 5, 27, 59, 80, 152, 235, 293, 386, 438, 486, 557 Electric field profile, 32, 33, 48, 62, 63, 70, 71, 80, 93, 94, 142, 143, 161, , 185, 212, 223, 224, 257, 271, 272, 280, 281, 306, 320, 321, 328, 330, 338, 340, 341, 351, 377, 399, 410, 412, 417, 418, 425, 426, 447, , 474, 496, 511, 512, 523, 542 Electric motors, 11, 21, 149, 152 Electric trains, 2, 4, 11 Electron injection, 26, 40, 71, 109, 112, 163, 388, 409, 439, 454, 500 Electron irradiation, 131, 199 Electron mobility, 288, 290, 291, 498, 524 Epitaxial growth, 58, 59, 70, 151, 295, 307, 358 Epitaxial layer, 58, 72, 76 F Fabrication, 58, 70, 139, 221, 294, 395, 445, 482, 495, 521, 550, 562, 563 Fly-back diode, 13, 421, 463, 558 Forward characteristics, 32 34, 47, 62, 63, 70, 71, 93 95, 142, 160, 209, 212, 223, 397, 425, 447, 468, 473, 497, 522, 542, 550 Forward voltage drop, 57, 95, 344, 358, 438, 500, 539 Fulop s power law, 6 11 Fundamental properties, 14 H H-bridge, 15, 228, 385, 386, 421, 463, 556 High level injection, 34, 43, 63, 71, 72, 95, 96, 108, 109, 111, 112, 117, 120, 121, 124, 131, 138, 162, 165, 166, 168, 177, 309, 312, 313, 316, 341, 342, 369, 414 High level lifetime, 36, 57, 97, 165, 287, 293, 407, 454, 499, 554 HVDC transmission, 13 18, 22 I Ideal drift region, 242 Ideal specific on-resistance, 10, 11, 258, 273, 282 Impact ionization, 6, 7, 10, 11, 174, 175, 182, 185, , 199, 226, 231, 412, 416, 418, 429, 430, 434, 458, 478, 482, 546, 548, 557 Impact ionization coefficients, 6, 7, 10, 11 Inductive load, 80, 107, 171, 174, 175, 232, , , , , 319, 321, 324, 325, , 389, 409, 412, 441, 454, 489, 491, 509, 555, 557, 559 Insulated gate bipolar transistor (IGBT), 2, 21, 86, 151, 252, 293, 385, 437, 485, 553 Intrinsic carrier concentration, 37, 303, 340, 368 Ion implantation, 237, 295, 358 Ionization integral, 7

7 Index 567 J Junction barrier Schottky (JBS) rectifier, 18 Junction depth, 24 L Laptops, 2 Latch-up, 230, 393, 396, 399, 443, 446, 448, 469, 481, , 491, 495, 498, 499, 502, 503, , 519, 521, 523, , 532, 539 Leakage current, 3, 26, 63, 83, 153, 254, 304, 388, 439, 488 Lifetime, 27, 57, 81, 152, 287, 293, 385, 438, 487, 554 Lithography, 241 Locomotive drives, 149, 233 M Material properties, 14 Maximum depletion width, 8 Maximum electric field, 9, 27, 59, 68, 71, 82, 83, 85, 238, 255, 257, 271, 272, 281, 297, 298, 306, 307, 341, 361, 369 Merged PN Schottky (MPS) rectifiers, 18 Minority carrier lifetime, 44, 55, 85, 297, 360 Minority carriers, 43, 84, 85, 88, 120, 154, 296, 359, 360 Mobility, 5, 11, 85, 163, 235, 237, , , 266, , 282, 283, , 294, 296, 297, 314, 341, 360, 370, 371, 390, 391, 441, 442, , 490, 493, 498, 499, 524 MOSFET, 2, 151, , 293, 385, 437, 486, 554 Motor control, 2, 13, 15, 18, 149, 192, 228, 232, 233, 336, 357, 386, 421, 463, 485, 515, 537, 549, Motor current, 13 Motor windings, 12, 13 Multiplication, 28 30, 85, 86, 88, 90, 117, 147, 154, 156, 182, 297, 298, , 368, 394, 416, 443, 444, 456, 493, 494, 510, 520, 533 Multiplication coefficient, 27, 29, 30, 46, 59, 60, 68, 69, 82, 83, 86, 140, 297, 298, 300, 312, O On-resistance, 2, 4, 5, 10, 11, 17, 237, 239, , 247, 250, 251, , 265, 268, 269, , 277, 278, , 287, , 293, 554 On-state characteristics, 27, 57, 81, 153, 287, 293, 393, 443, 493, 554 On-state voltage drop, 5, 25, 57, 80, 151, 249, 293, 385, 437, 485, 553 Operating temperature, 57, 290 Oxide field, 255 P Paralleling devices, 407, 452, 508, 532 Parallel-plane junction, 7 10 Permittivity, 255 Pinch-off voltage, 245, 262, 263 P-i-N rectifiers, 13, 18, 26, 27, 34, 43, 44, 55, 63, 71, 95, 119, 229, 404, 410, 417, 449, 457, 511, 556 Planar gate, 151, , , 295, 310, 358, 386, 434, 437, 486, 487, 554, 555, 557 P-N junction, 7, 9, 10, 21, 25, 85, 297, 360, 562 Poisson s equation, 105, 148, 257, 271, 280, 306, 340 Polysilicon, 390, 391, 438, 441, 442, 466, 487, 490, 492, 499, 501, 502, 524 Potential barrier, 237, 238 Potential contours, 254, 255, 271, 280, 304 Potential crowding, 255, 304 Potential distribution, 251, 269, 278, 368 Power dissipation, 2, 3, 13, 43, 45, 54, 55, 112, 125, 126, 131, 132, 138, 139, 147, 188, 190, 191, 200, 208, 220, 221, 228, 235, 262, 263, 268, 269, 277, 278, 287, 288, 290, 291, 335, 336, 357, 381, 382, 422, 423, 463, 479, 516, 517, 538, 547, 559 Power loss, 3, 43, 76, 103, 168, 267, 316, 419, 460, 485, 553 Power MOSFET, 2 6, 17, 151, , , , , 286, 287, 291, 293, 294, 296, , 559, 560 Pulse width modulation, 12, 13, 15, 192, 228, 336, 357 Punch-through, 83, 85, 86, 89, 123, 146, 155, 171, , 197, 227, 297, 298, 306, 323, 341, 361, 368, 409, , 420, 430, 431, 455, 456, 461, 478, 509, 510, 515, 534, 536, 546

8 568 Index R Reach-through, 84, 154, 235, 294, 394, 444, 494 Reach-through breakdown, 236, 237 Recombination lifetime, 112, 115 Resistivity, 22, 24, 55, 58, 63, 235, 242, 258, 259, 273, 282, 283, 293 Reverse blocking, 21, 25, 27, 43, 80, 152, 295, 358, 386, 437, 486 Reverse characteristics, 44, 54 Reverse recovery, 13, 15, 17, 18, 27, 43 45, 54 55, 79, 189, 229, 267, 277, 286, 333, 379, 385, 386, 420, 421, 432, 437, 461, 463, 480, 485, 515, 556, 558 Rupture, 5, 235, 238, 251, 257, 269, 272, 278, 281 S Schottky rectifier, 13 Sheet resistance, 390, 391, 441, 442, 465, 466, 490, 492, , 526 Shielding, , 255, 257, 272, 281, 307 Shielding region, 236, 237, , , , , , 296, 301, 304, 306, 307, 313, 314, 317, 338, 340, 341, 363, 364, 366, , 375 Short-circuit, 23 Short-circuiting, 237 Silicon carbide, 2 6, 13, 14, 18, 23, 57 76, , , Silicon PiN rectifier, 13, 18 Snubbers, 3, 5, 14, 15, 229, 386, 421, 432, 435, 437, 463, 480, 482, 485, 553, 557 Specific capacitance, 240, 244, 245, 250, 323 Specific on-resistance, 5, 10, 11, 17, 237, , 250, 251, , 265, 268, 269, , 277, 278, , 287, 289, 290, 293, 554 Spreading resistance, 241, 242 Stored charge, 40, 79, 165, 235, 294, 409, 454, 509 Submicron, 241 Substrate resistance, 259, 273, 283 Sub-surface region, 236 Switching energy, , 131, 138, 139, 147, , , 206, 207, , , , 277, 286, , , , , , , 479, 515, 516, , Switching losses, 17, 18, 120, 128, 133, 152, 186, 198, 201, 217, 295, 330, 358, 378, 387, 419, 438, 460, 487, 513, 535 Switching speed, 2, 55, 57, 233, 385 Switching transient, 23, 123, 189, 218, 221, 235, 267, 277, 286, 333, 379, 420, 423, 461, 472, 515, 541 Synopsis, T Transformer, Technology, 16, 59, 76, 151, 294, 553, 560 Temperature coefficient, 452 Traction, 2, 11, 18, 21, 149, 152, 233 Transient current, 111, 114, 115, , 125, 177, 178, 180, 181, 186, 187, 194, 195, 197, 204, 205, 250, 295, 325, 329, 331, 347, 351, 353, 354, 414, 415, 418, 459, 512 Trench, , , 221, 222, 229, 230, 232, 233, 293, 405, 427, 450, 462, 464, 471, 476, 477, 504, 515, 517, 530, 538, 544, 545, 554, 555, 557, 560 Trench bottom, 293 Trench corner, 230, 232, 557 Trench sidewalls, 158 Trench width, 157, 167 Two-dimensional numerical simulations, 31, 37, 42, 47, 50, 52, 54, 65, 73, 91, 99, 115, 122, 128, 134, 141, 143, 157, 167, 181, 188, 201, 211, 212, 216, 218, 222, 224, 236, 251, 266, 269, 275, 278, 284, 300, 313, 326, 332, 338, 341, 348, 354, 363, 370, 374, 378, 394, 402, 415, 419, 424, 426, 444, 448, 455, 460, 467, 469, 472, 475, 494, 502, 509, 514, 521, 526, 533, 541, 543, 553, 556, 558, 559 U Unipolar power devices, 235 V Vacuum tubes, 21 Variable frequency motor drives, 11 13, 228 W Work function, 238 Z Zero-bias depletion width, 242, 243, 258, 273, 282