APPLICATION AC100V~200V three-phase inverter drive for small power motor control. TERMINAL (3.556) (1) (0.5) (6.5) (10.5) (1.5) DUMMY PIN.
|
|
- Pierce Rice
- 5 years ago
- Views:
Transcription
1 MITSBISHI SEMICODCTOR <Dual-In-Line ackage Intelligent ower ower Module> TYE TYE ITEGRTED OER FCTIOS 600/15 low-loss 5 th generation IGBT inverter bridge for 3 phase DC-to-C power conversion ITEGRTED DRIE, ROTECTIO D SYSTEM COTROL FCTIOS r upper-leg IGBTS : Drive circuit, High voltage isolated high-speed level shifting, Control supply under-voltage () protection. r lower-leg IGBTS : Drive circuit, Control supply under-voltage protection (), Short circuit protection (SC). (Fig.3) Fault signaling : Corresponding to an SC fault (Lower-side IGBT) or a fault (Lower-side supply). Input interface : 5 line CMOS/TTL compatible. (High ctive) L pproved : Yellow Card o. E80276 LICTIO C100~200 three-phase inverter drive for small power motor control. Fig. 1 CKGE OTLIES (30.5) 28 (1.778) ( ) HET SIK SIDE Type name, Lot o (7.62) (4.62) (1) (7.62 4) (41) (42) (49) (6.5) (10.5) (0.5) (0.5) (0.5) DMMY I (3.556) (1) (0.5) (17.6) (17.4) (HI2 DETH 2) (HI3.3) (17.6) (17.4) TERMIL (1.5) (0.278) (3.556) (2.056) (0.5) CB (1) TTER (1.5) SLIT (1.8MI) (ex. CB LYOT) ote1) Detail (5) (35 ) (1.2) (1.25) (2.5) HET SIK SIDE (R0.75) TERMIL CODE 1 FS 2 (G) 3 FB (COM) 6 7 FS 8 (G) 9 FB (COM) FS 14 (G) 15 FB (COM) (G) 20 O ote2) FO CI 27 C (G) 30 (G) Dimensions in mm ote 1 : In order to get enough creepage distance between the terminals, please take some countermeasure such as a slit on CB. 2:Treat the terminal O of as C (just the same as ver.2). However, external connection of O with terminal is necessary for S21562 or S21563.
2 Fig. 2 ITERL FCTIOS BLOCK DIGRM (TYICL LICTIO EXMLE) C1 : Tight tolerance, temp-compensated electrolytic type (ote : The capacitance value depends on the M control scheme used in the applied system). C2 : 0.22~2µF R-category ceramic capacitor for noise filtering. Inrush current limiter circuit High-side input (M) (5 line) (ote 1,2) Input signal Input signal Input signal conditioning conditioning conditioning Level shifter Level shifter Level shifter rotection circuit () rotection circuit () rotection circuit () Drive circuit Drive circuit Drive circuit CB CB+ CB+ CB CB+ CB C2 C1 (ote 6) C line input Z Z : ZR (Surge absorber) C : C filter (Ceramic capacitor 2.2~6.5nF) (ote : dditionally, an appropriate line-to line surge absorber circuit may become necessary depending on the application environment). C C Low-side input (M) (5 line) (ote 1, 2) (ote 4) Fig. 3 1 CI Drive circuit Input signal conditioning logic rotection circuit FO Fault output (5 line) (ote 3, 5) Control supply nder-oltage protection H-side IGBTS L-side IGBTS (15 line) ote1: Input logic is high-active. There is a 2.5kΩ (min) pull-down resistor built-in each input circuit. hen using an external CR filter, please make it satisfy the input threshold voltage. 2: By virtue of integrating an application specific type HIC inside the module, direct coupling to C terminals without any opto-coupler or transformer isolation is possible. (see also Fig. 8) 3: This output is open collector type. The signal line should be pulled up to the positive side of the 5 power supply with approximately 10kΩ resistance. (see also Fig. 8) 4: The wiring between the power DC link capacitor and the 1 terminals should be as short as possible to protect the against catastrophic high surge voltages. r extra precaution, a small film type snubber capacitor (0.1~0.22µF, high voltage type) is recommended to be mounted close to these 1 DC power input pins. 5: output pulse width should be decided by putting external capacitor between and C terminals. (Example : =22nF tfo=1.8ms (Typ.)) 6: High voltage (600 or more) and fast recovery type (less than 100ns) diodes should be used in the bootstrap circuit. C D M C line output Fig. 3 EXTERL RT OF THE ROTECTIO CIRCIT Drive circuit Short Circuit rotective Function (SC) : SC protection is achieved by sensing the L-side DC-Bus current (through the external shunt resistor) after allowing a suitable filtering time (defined by the RC circuit). hen the sensed shunt voltage exceeds the SC trip-level, all the L-side IGBTs are turned OFF and a fault signal () is output. Since the SC fault may be repetitive, it is recommended to stop the system when the signal is received and check the fault. IC () H-side IGBTS SC rotection Trip Level External protection circuit L-side IGBTS 1 Shunt Resistor (ote 1) C C R Drive circuit CI B rotection circuit C (ote 2) ote1: In the recommended external protection circuit, please select the RC time constant in the range 1.5~2.0. 2: To prevent erroneous protection operation, the wiring of, B, C should be as short as possible. 0 Collector current waveform 2 tw ()
3 MXIMM RTIGS (Tj = 25 C, unless otherwise noted) IERTER RT Symbol Ratings CC CC(surge) CES ±IC ±IC C Tj Supply voltage Supply voltage (surge) Collector-emitter voltage Each IGBT collector current Each IGBT collector current (peak) Collector dissipation Junction temperature pplied between - pplied between - Tf = 25 C Tf = 25 C, less than 1ms Tf = 25 C, per 1 chip (ote 1) ~+125 ote 1 : The maximum junction temperature rating of the power chips integrated within the is 150 C (@ Tf 100 C) however, to ensure safe operation of the, the average junction temperature should be limited to Tj(ave) 125 C (@ Tf 100 C). C COTROL (ROTECTIO) RT Symbol Ratings D DB I FO IFO SC Control supply voltage Control supply voltage Input voltage Fault output supply voltage Fault output current Current sensing input voltage pplied between 1-C, 1-C pplied between FB-FS, FB-FS, FB-FS pplied between,, -C,,, -C pplied between FO-C Sink current at FO terminal pplied between CI-C ~D ~D ~D+0.5 TOTL SYSTEM Symbol Ratings Self protection supply voltage limit D = 13.5~16.5, Inverter part CC(ROT) Tj = 125 C, non-repetitive, less than 2 (short circuit protection capability) Tf Module case operation temperature (ote 2) C Tstg iso Storage temperature Isolation voltage 60Hz, Sinusoidal, C 1 minute, connection pins to heat-sink plate ~ ~ C rms ote 2 : Tf MESREMET OIT l Board Specification : Dimensions : mm, Finishing : 12s, arp : 50~100µm Control Terminals 18mm 16mm FDi Chip l Board IGBT/FDi Chip Groove IGBT Chip Temperature measurement point (inside the I board) ower Terminals Temperature measurement point (inside the I board) Silicon-grease should be applied evenly with a thickness of 100~200µm
4 THERML RESISTCE Symbol Rth(j-f)Q Rth(j-f)F Junction to case thermal resistance (ote 3) Inverter IGBT part (per 1/6 module) Inverter FDi part (per 1/6 module) ote 3: Grease with good thermal conductivity should be applied evenly with about +100µm~+200µm on the contacting surface of and heat-sink. Min. Typ. Max C/ C/ ELECTRICL CHRCTERISTICS (Tj = 25 C, unless otherwise noted) IERTER RT CE(sat) EC ton trr Symbol tc(on) toff tc(off) ICES Collector-emitter saturation voltage FDi forward voltage Switching times Collector-emitter cut-off current D = DB = 15 IC = 15, Tj = 25 C I = 5 IC = 15, Tj = 125 C Tj = 25 C, IC = 15, I = 0 CC = 300, D = DB = 15 IC = 15, Tj = 125 C, I = 0 5 Inductive load (upper-lower arm) CE = CES Tj = 25 C Tj = 125 C Min. Typ. Max COTROL (ROTECTIO) RT Symbol ID FOH FOL SC(ref) II DBt DBr Dt Dr tfo th(on) th(off) Circuit current Fault output voltage Short circuit trip level Input current Supply circuit under-voltage protection Fault output pulse width O threshold voltage OFF threshold voltage D = DB = 15 I = 5 D = DB = 15 I = 0 Total of 1-C, 1-C FB-FS, FB-FS, FB-FS Total of 1-C, 1-C FB-FS, FB-FS, FB-FS SC = 0, FO circuit pull-up to 5 with 10kΩ SC = 1, IFO = 1 Tj = 25 C, D = 15 (ote 4) I = 5 Trip level Tj 125 C Reset level Trip level Reset level = 22nF (ote 5) pplied between,, -C,,, -C Min. Typ. Max ote 4 : Short circuit protection is functioning only at the low-arms. lease select the value of the external shunt resistor such that the SC triplevel is less than :Fault signal is output when the low-arms short circuit or control supply under-voltage protective functions operate. The fault output pulsewidth tfo depends on the capacitance value of according to the following approximate equation : = tfo [F]. ms
5 MECHICL CHRCTERISTICS D RTIGS Mounting torque eight Heat-sink flatness Mounting screw : M3 Recommended 0.78 m (ote 6) Min Typ. 20 Max m g µm ote 6: Measurement point of heat-sink flatness + Measurement location 3mm Heat-sink side + Heat-sink side RECOMMEDED OERTIO CODITIOS CC D DB D, DB tdead fm IO Symbol I C Supply voltage Control supply voltage Control supply voltage Control supply variation rm shoot-through blocking time M input frequency llowable r.m.s. current Minimum input pulse width C variation pplied between - pplied between 1-C, 1-C pplied between FB-FS, FB-FS, FB-FS r each input signal, Tf 100 C Tf 100 C, Tj 125 C CC = 300, D = 15, fc = 5kHz.F = 0.8, sinusoidal Tj 125 C, Tf 100 C (ote 7) O (ote 8) between C- (including surge) ote 7 : The allowable r.m.s. current value depends on the actual application conditions. 8:The input pulse width less than I might make no response. Min. Typ. Max / khz rms ns
6 Fig. 4 THE ITERL CIRCIT FB FS 1 HIC1 CC B IGBT1 Di1 I HO COM S FB FS 1 HIC2 CC B IGBT2 Di2 I HO COM S FB FS 1 HIC3 CC B IGBT3 Di3 I HO COM S LIC IGBT4 Di4 OT 1 CC IGBT5 Di5 OT OT IGBT6 Di6 O CI O(C) C GD CI
7 Fig. 5 TIMIG CHRTS OF THE ROTECTIE FCTIOS [] Short-Circuit rotection (Lower-arms only) (ith the external shunt resistance and CR connection) a1. ormal operation : IGBT O and carrying current. a2. Short circuit current detection (SC trigger). a3. Hard IGBT gate interrupt. a4. IGBT turns OFF. a5. FO timer operation starts : The pulse width of the FO signal is set by the external capacitor. a6. Input L : IGBT OFF state. a7. Input H : IGBT O state, but during the FO active signal period the IGBT doesn t turn O. a8. IGBT OFF state. Lower-arms control input a6 a7 rotection circuit state SET Internal IGBT gate a2 a3 Output current Ic a1 SC a4 a8 Sense voltage of the shunt resistance SC reference voltage Error output a5 CR circuit time constant DELY [B] nder-oltage rotection (Lower-arm, D) b1. Control supply voltage rises : fter the voltage level reaches Dr, the circuits start to operate when next input is applied. b2. ormal operation : IGBT O and carrying current. b3. nder voltage trip (Dt). b4. IGBT OFF in spite of control input condition. b5. FO operation starts. b6. nder voltage reset (Dr). b7. ormal operation : IGBT O and carrying current. Control input rotection circuit state SET Control supply voltage D Dr b1 Dt b3 b6 b2 b4 b7 Output current Ic Error output b5
8 [C] nder-oltage rotection (pper-arm, DB) c1. Control supply voltage rises : fter the voltage reaches DBr, the circuits start to operate when next input is applied. c2. ormal operation : IGBT O and carrying current. c3. nder voltage trip (DBt). c4. IGBT OFF in spite of control input condition, but there is no FO signal output. c5. nder voltage reset (DBr). c6. ormal operation : IGBT O and carrying current. Control input rotection circuit state SET DBr Control supply voltage DB c1 DBt c3 c5 c2 c4 c6 Output current Ic Error output High-level (no fault output) Fig. 6 RECOMMEDED C I/O ITERFCE CIRCIT 5 line 10kΩ,,,,, C C(Logic) 2.5kΩ (min) ote : RC coupling at each input (parts shown dotted) may change depending on the M control scheme used in the application and the wiring impedance of the application s printed circuit board. The input signal section integrates a 2.5kΩ(min) pull-down resistor. Therefore, when using a external filtering resistor, care must be taken to satisfy the turn-on threshold voltage requirement. Fig. 7 RECOMMEDED IRIG OF SHT RESISTCE iring inductance should be less than 10nH. width=3mm, thickness=100µm, length=17mm in copper pattern (rough standard) Shunt resistor C lease make the connection point as close as possible to the terminal of shunt resistor.
9 Fig. 8 TYICL LICTIO CIRCIT EXMLE C1:Tight tolerance temp-compensated electrolytic type C2,C3: 0.22~2µF R-category ceramic capacitor for noise filtering. (ote: The capacitance value depends on the M control used in the applied system.) C2 C1 C3 FB FS 1 HIC1 CC B I HO C2 C1 FB FS COM S C3 1 HIC2 CC B I HO C IT C2 C1 C3 FB FS 1 COM S HIC3 CC B I HO COM S LIC OT M 1 C3 CC 5 line OT C GD OT O CI CI Too long wiring here might cause short-circuit. C 15 line C4() C5 B R1 Shunt Resistance Long GD wiring here might generate noise to input and cause IGBT malfunction. If this wiring is too long, the SC level fluctuation might be larger and cause SC malfunction. 1 ote 1 : To prevent the input signals oscillation, the wiring of each input should be as short as possible. (Less than 2cm) 2:By virtue of integrating an application specific type HIC inside the module, direct coupling to C terminals without any opto-coupler or transformer isolation is possible. 3:FO output is open collector type. This signal line should be pulled up to the positive side of the 5 power supply with approximately 10kΩ resistor. 4:FO output pulse width is determined by the external capacitor between and C terminals (). (Example : = 22 nf tfo = 1.8 ms (typ.)) 5:The logic of input signal is high-active. The input signal section integrates a 2.5kΩ (min) pull-down resistor. Therefore, when using external filtering resistor, care must be taken to satisfy the turn-on threshold voltage requirement. 6:To prevent malfunction of protection, the wiring of, B, C should be as short as possible. 7:lease set the R1C5 time constant in the range 1.5~2. 8:Each capacitor should be located as nearby the pins of the as possible. 9:To prevent surge destruction, the wiring between the smoothing capacitor and the &1 pins should be as short as possible. pproximately a 0.1~0.22µF snubber capacitor between the &1 pins is recommended.
(0~3 ) HEAT SINK SIDE (3.5) (6.5) (1.5) (0.4) (0.5) (1) (45 ) (30 ) (15 )
ITEGRTED OER FCTIOS 600/5 low-loss 5 th generation inverter bridge for three phase DC-to-C power conversion ITEGRTED DRIE, ROTECTIO D SYSTEM COTROL FCTIOS r upper-leg IGBTS :Drive circuit, High voltage
More informationAPPLICATION AC100V~200V three-phase inverter drive for small power motor control. (3.556) (1) TERMINAL (0.5) (6.5) (10.5) (1.5) (1.
MITSBISHI SEMICODCTOR TYE TYE TEGRTED OWER FCTIOS 4th generation (planar) IGBT inverter bridge for three phase DC-to-C power conversion. TEGRTED DRIE, ROTECTIO D SYSTEM COTROL
More informationAPPLICATION AC100V~200V three-phase inverter drive for small power motor control. (2.2) 21.4 ±0.5 (10) (11) (10) (4.65) (2.9) 34.9 ± ±0.5 (1.
MITSUBISHI SEMICODUCTOR TYPE TYPE PS21869 ITEGRTED POWER FUCTIOS 600/50 low-loss CSTBT inverter bridge for 3 phase DC-to-C power conversion ITEGRTED
More informationPS21562-SP PS21562-SP. APPLICATION AC100V~200V inverter drive for small power motor control. PS21562-SP
MITSUBISHI SEMICONDUCTOR TYPE TYPE INTEGRATED POWER FUNCTIONS 600/5A low-loss 5 th generation IGBT inverter bridge for three phase DC-to-AC power conversion.
More informationAPPLICATION AC100V~200V three-phase inverter drive for small power motor control. (2.2) 21.4 ±0.5 (10) (11) (10) (4.65) (2.9) 34.9 ± ±0.5 (1.
MITSUBISHI SEMICONDUCTOR TYPE TYPE PS2869 INTEGRTED POWER FUNCTIONS 600/50 low-loss CSTBT inverter bridge for 3 phase DC-to-C power conversion INTEGRTED
More informationPS22053 PS APPLICATION AC400V 0.2kW~0.75kW inverter drive for small power motor control. PS22053
MITSBISHI SEMIONDTOR TYE TYE INTEGRTED OER FNTIONS 1200/10 low-loss 4 th generation IGBT inverter bridge for 3 phase D-to- power conversion INTEGRTED
More informationAPPLICATION AC100V~200V three-phase inverter drive for small power motor control (1.96) 17.7 (3.5) 35.9 ±0.5 (5.5)
MITSUBISHI SEMICONDUCTOR TYPE TYPE INTEGRATED POWER FCTIONS 600/30A low-loss CSTBT TM inverter bridge with N-side three-phase output DC-to-AC power
More informationPS21265-P/AP TRANSFER-MOLD TYPE TYPE INSULATED TYPE TYPE
MITSUBISHI SEMICONDUCTOR TYPE TYPE PS21265 INTEGRTED POWER FUNCTIONS 600/20 low-loss 5 th generation IGBT inverter bridge for three phase DC-to-C power
More informationPS21869-P/AP PS21869-P/AP. APPLICATION AC100V~200V inverter drive for small power motor control. PS21869
MITSUBISHI SEMICONDUCTOR TYPE TYPE PS21869 INTEGRTED POWER FUNCTIONS 600/50 CSTBT inverter bridge for three phase DC-to-C power conversion INTEGRTED
More informationAPPLICATION AC100V~200V three-phase inverter drive for small power motor control (1.96) 17.7 (12.78) (3.5) 35.9 ±0.5 (5.5) (13.5)
MITSUBISHI SEMICONDUCTOR TEGRATED POWER FUNCTIONS TYPE TYPE 600/30A low-loss CSTBT TM inverter bridge with N-side three-phase output DC-to-AC power
More informationPS21661-RZ/FR PS21661-FR. APPLICATION AC100V~200V, three-phase inverter drive for small power motor control.
MITSUBISHI SEMICONDUCTOR TYPE TYPE PS21661-RZ PS21661-FR INTEGRATED POWER FUNCTIONS 600/3A low-loss 5th generation IGBT inverter bridge for 3 phase
More informationPS21963-ET/-AET/-CET/-ETW TRANSFER-MOLD TYPE INSULATED TYPE
PS21963-ET INTEGRTED POWER FUNCTIONS 600/8 low-loss CSTT TM inverter bridge for three phase DC-to-C power conversion INTEGRTED DRIE, PROTECTION ND SYSTEM CONTROL FUNCTIONS For upper-leg IGTS :, High voltage
More informationMitsubishi Semiconductors <Dual-In-Line Package Intelligent Power Module> PS21865 Transfer-Mold Type Insulated Type
Pre DS.Kou,M.Sakai,F.Tametani Rev D D S.Kou,T.Iwagami,F.Tametani Apr DM.Fukunaga 02-8/9 M.Fukunaga 03-8/6 Applications : AC100V 200V three-phase inverter drive for small power motor control. Integrated
More informationPM50CSE120 FLAT-BASE TYPE TYPE INSULATED PACKAGE
MITSUBISHI FLT-BSE TYE TYE FETURE a) dopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. b) Using new Diode which is designed
More informationApplied between V UFB -V UFS, V VFB -V VFS,V WFB -V WFS. Applied between U P,V P,W P -V PC, U N,V N,W N -V NC
Maximum Ratings (Tj=25 C, unless otherwise noted) : Inverter Part: Item Symbol Condition Rating Unit Supply voltage CC Applied between P-NU,N,NW 450 Supply voltage (surge) CC(surge) Applied between P-NU,N,NW
More informationPM50RSE120 FLAT-BASE TYPE TYPE INSULATED PACKAGE
MITSUBISHI FLT-BSE TYE TYE ISULTED CKGE FETURE a) dopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. b) Using new Diode which
More informationPM150RSE120 FLAT-BASE TYPE TYPE INSULATED PACKAGE
MITSUBISHI FLT-BSE TYE TYE FETURE a) dopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. b) Using new Diode which is designed
More informationApplication Note Mitsubishi Semiconductors <Dual-In-Line Package Intelligent Power Module> PS21867 Transfer-Mold Type Insulated Type
Application Note Mitsubishi Semiconductors Insulated Type Pre. T.Iwagami Rev. F S.Kou, T.Iwagami, F.Tametani Apr. M.Iwasaki 01-12/21 M.Fukunaga 03-8/6 Applications
More informationC L DETAIL "B" TERMINAL CODE 1 (VNC) 2 VUFB 3 VVFB 4 VWFB 5 UP 6 VP 7 WP 8 VP1 9 VNC* 10 UN 11 VN 12 WN 13 VN1 HEATSINK SIDE
Dual In-line Intelligent Power Module R S A N D P X K C L AG U P 17 18 16 19 HEATSINK SIDE Y 15 R 14 20 13 12 11 21 10 9 Outline Drawing and Circuit Diagram 8 Dimensions Inches Millimeters A 1.50±0.02
More informationPS12034 PS MITSUBISHI SEMICONDUCTOR <Application Specific Specific Intelligent Power Power Module> FLAT-BASE TYPE TYPE INSULATED TYPE TYPE
MITSUBISHI SEMICONDUCTOR PS4 PS4 FLT-BSE TYPE TYPE INSULTED TYPE TYPE PS4 INTEGRTED FUNCTIONS ND FETURES Converter bridge for phase C-to-DC
More informationPM25CLA120. APPLICATION General purpose inverter, servo drives and other motor controls PM25CLA120 MITSUBISHI <INTELLIGENT POWER MODULES>
FETURE a) dopting new 5th generation (CSTBT) chip, which performance is improved by 1µm fine rule process. r example, typical ce(sat)=1.9 @Tj=125 b) I adopt the over-temperature conservation by Tj detection
More informationPS21A79 MAIN FUNCTION AND RATINGS 3 phase inverter with N-side open emitter structure 600V / 50A (CSTBT)
MAIN FUNCTION AND RATINGS 3 phase inverter with N-side open emitter structure 600V / 50A (CSTBT) APPLICATION AC100 ~ 200Vrms class, motor control INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS
More informationPS21963-S Intellimod Module Dual-In-Line Intelligent Power Module 10 Amperes/600 Volts
Dual-In-Line Intelligent Power Module R O A D N P X K C L FF R U 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 18 19 20 HEATSINK SIDE Outline Drawing and Circuit Diagram 21 Dimensions Inches Millimeters A
More informationPS21965, PS21965-A, PS21965-C Intellimod Module Dual-In-Line Intelligent Power Module 20 Amperes/600 Volts
S21965, S21965-A, S21965-C Dual-In-Line Intelligent ower Module R O A D N X K C L DD 17 16 15 14 13 12 11 10 S21965-C 9 8 7 6 5 4 DTAIL "A" 3 2 1 K F V G H J DTAIL "B" S21965 / S21965-A DD R O A D N X
More informationAB (2 PLACES) 30 NC 31 P 33 V 34 W
Dual-In-Line Intelligent Power Module A D G H R DUMMY PINS J K L Q C HEATSINK SIDE B 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 29 30 E E E F 9 8 F 7 6 5 4 3 2 1 M P 35 35 34 33 32 31 N P
More informationPS S Intellimod Module Dual-In-Line Intelligent Power Module 20 Amperes/600 Volts
Dual-In-Line Intelligent Power Module R O A D N P X K C L AF R P 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 18 19 20 U HEATSINK SIDE Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 1.50±0.02
More informationPS , PS A, PS C Intellimod Module Dual-In-Line Intelligent Power Module 20 Amperes/600 Volts
PS21965-4, PS21965-4A, PS21965-4C Dual-In-Line Intelligent Power Module R A D N O P 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 PS21965-4C DETAIL "A" X K K V G F E H C J L DETAIL "B" AD AE PS21965-4 / PS21965-4A
More informationPM50CLA120. APPLICATION General purpose inverter, servo drives and other motor controls PM50CLA120 FEATURE MITSUBISHI <INTELLIGENT POWER MODULES>
FEATURE a) Adopting new th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. r example, typical ce(sat)=1.9 @Tj=1 C b) I adopt the over-temperature conservation by Tj
More informationPM150RLB060. APPLICATION General purpose inverter, servo drives and other motor controls PM150RLB060.
FLT-BSE TYPE INSULTED PCKGE FETURE a) dopting new 5th generation (CSTBT) chip, which performance is improved by µm fine rule process. r example, typical ce(sat)= @Tj=25 b) I adopt the over-temperature
More informationPS21867-P. Intellimod Module Dual-In-Line Intelligent Power Module 30 Amperes/600 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual-In-Line Intelligent Power Module J A N M C BB P B AA 27 28 30 31 33 35 21 1 2 3 4 29 5 6 7 8 32 9 1 12 13 34
More informationPS , PS A, PS C Intellimod Module Dual-In-Line Intelligent Power Module 5 Amperes/600 Volts
PS21962-4, PS21962-4A, PS21962-4C Dual-In-Line Intelligent Power Module R A D N O P 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 PS21962-4C DETAIL "A" X K K V G F E H C J L DETAIL "B" AD AE PS21962-4 / PS21962-4A
More informationPS21265-P PS21265-AP Intellimod Module Dual-In-Line Intelligent Power Module 20 Amperes/600 Volts
PS21265-P PS21265-AP Dual-In-Line Intelligent Power Module H A DETAIL "A" HEATSINK SIDE 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 M B K P N J 22 23 24 25 26 C L Q DETAIL "A" W G DETAIL "C"
More informationPM75RSD060 PM75RSD060. APPLICATION General purpose inverter, servo drives and other motor controls LABEL PM75RSD060
MITSUBISHI MRSD6 MRSD6 FLT-BSE TYE TYE MRSD6 FETURE a) dopting new th generation planar IGBT chip, which performance is improved by µm fine rule process. r example, typical
More informationN 36 NU 37 W 38 V 39 U 40 P 41 U 42 V
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual-In-Line Intelligent Power Module J K Q V 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 1718 19 29 41 42 B M (2 PLACES) L (5
More informationPM200CVA060 PM200CVA060. APPLICATION General purpose inverter, servo drives and other motor controls LABEL PM200CVA060
MITSUBISHI PMC6 PMC6 TYPE PMC6 FETURE φ, 6 Current-sense IGBT for khz switching Monolithic gate drive & protection logic Detection, protection & status indication circuits
More informationPM75CSD120 PM75CSD120. APPLICATION General purpose inverter, servo drives and other motor controls LABEL PM75CSD120
MITSUBISHI PMCSD PMCSD TYPE PMCSD FETURE a) dopting new th generation planar IGBT chip, which performance is improved by µm fine rule process. b) Using new Diode which
More informationPM75CL1A120 FLAT-BASE TYPE INSULATED PACKAGE
PMCL1A1 PMCL1A1 FEATURE verter + Drive & Protection IC a) Adopting new th generation Full-Gate CSTBT TM chip b) The over-temperature protection which detects the chip surface temperature of CSTBT TM is
More informationPM100RL1B060 FLAT-BASE TYPE INSULATED PACKAGE
FETURE verter + Brake + Drive & Protection IC a) dopting new th generation Full-Gate CSTBT TM chip b) The over-temperature protection which detects the chip surface temperature of CSTBT TM is adopted.
More informationPS22A78-E Transfer-Mold Type Insulated Type
Pre. K.Kuriaki,T.Iwagami,T.Nagahara.Iwagami,T.Nagahara Apr. Y.Nagashima 29-Jan- 07 Rev. D T.Nagahara,M.Sakai,Shang,T.Nakano T.Iwagami 4-Jul.- 08 Applications : 0.2~5.5kW/AC400Vrms three-phase motor variable
More informationPS , PS A, PS C Intellimod Module Dual-In-Line Intelligent Power Module 3 Amperes/600 Volts
PS21961-4, PS21961-4A, Dual-In-Line Intelligent Power Module R A D N O P 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 DTAIL "A" X K K V G F H C J L DTAIL "B" AD A PS21961-4 / PS21961-4A AD A R O A N D P X
More informationPS21353-GP. Intellimod Module Dual-In-Line Intelligent Power Module 10 Amperes/600 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual-In-Line Intelligent Power Module Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 1.93 49.0 B
More informationN P HEATSINK SIDE 25 UN 26 VUFB 27 UP 30 NC 31 NC 32 NC 33 NC 34 NC 35 NC 28 U(VUFS) 29 NC
Single-In-Line Intelligent Power Module A D G H J K L M N P C W X E 35 34 33 32 31 30 Y V (2 PLACES) F PS21661-RZ AA AK AJ Z B 1 3 2 5 4 7 6 9 8 11 3 12 15 14 17 16 19 18 21 25 26 27 28 20 22 23 24 29
More informationPS11033 PS11033 PS MITSUBISHI SEMICONDUCTOR <Application Specific Specific Intelligent Power Power Module>
MITSUBISHI SEMICONDUCTO FLT-BSE TYPE TYPE INSULTED TYPE TYPE INTEGTED FUNCTIONS ND FETUES Converter bridge for 3 phase C-to-DC power conversion.
More informationPSS20S51F6 / PSS20S51F6-C TRANSFER MOLDING TYPE INSULATED TYPE
OUTLINE MAIN FUNCTION AND RATINGS 3 phase DC/AC inverter 600V / 20A (CSTBT) N-side IGBT open emitter Built-in bootstrap diodes with current limiting resistor APPLICATION AC 100~240Vrms(DC voltage:400v
More informationPM25RL1B120 FLAT-BASE TYPE INSULATED PACKAGE
PMRLB PMRLB FETURE verter + Brake + Drive & Protection IC a) dopting new th generation Full-Gate CSTBT TM chip b) The over-temperature protection which detects the chip surface temperature of CSTBT TM
More informationPS21562-P. Intellimod Module Dual-In-Line Intelligent Power Module 5 Amperes/600 Volts
Dual-In-Line Intelligent Power Module A D DUMMY PINS K H L Q R C B 28 27 29 30 26 25 24 23 22 21 20 19 18 17 16 15 14 13 LABEL E E E F 12 11 10 9 8 F 7 6 5 4 3 2 1 M C L P 35 HEATSINK SIDE 35 34 33 32
More informationFBA42060 PFC SPM 45 Series for Single-Phase Boost PFC
FBA42060 PFC SPM 45 Series for Single-Phase Boost PFC Features UL Certified No. E209204 (UL1557) 600 V - 20 A Single-Phase Boost PFC with Integral Gate Driver and Protection Low Thermal Resistance Using
More informationPM50RLB060. APPLICATION General purpose inverter, servo drives and other motor controls PM50RLB060 MITSUBISHI <INTELLIGENT POWER MODULES>
PMRLB6 PMRLB6 FETURE a) dopting new th generation (CSTBT) chip, which performance is improved by µm fine rule process. r example, typical ce(sat)=. @Tj= C b) I adopt the over-temperature conservation by
More informationPM50RSE060 PM50RSE060. APPLICATION General purpose inverter, servo drives and other motor controls PM50RSE060 LABEL
MITSUBISHI PMRSE6 PMRSE6 FLT-BSE TYPE TYPE INSULTED PCKGE PMRSE6 FETURE a) dopting new th generation planar IGBT chip, which performance is improved by µm fine rule process.
More informationLDIP- IPM IM (Preliminary)
LDIP- IPM (Preliminary) Description Cyntec IPM is integrated Drive, protection and system control functions that is designed for high performance 3-phase motor driver application like: Home appliances
More informationPSS15S92F6-AG PSS15S92E6-AG TRANSFER MOLDING TYPE INSULATED TYPE
PSS15S92F6-AG PSS15S92E6-AG OUTLINE MAIN FUNCTION AND RATINGS 3 phase DC/AC inverter 600V / 15A (CSTBT) N-side IGBT open emitter Built-in bootstrap diodes with current limiting resistor APPLICATION AC
More informationPSS10S72FT TRANSFER MOLDING TYPE INSULATED TYPE
OUTLINE MAIN FUNCTION AND RATINGS 3 phase DC/AC inverter 1200V / 10A (CSTBT) N-side IGBT open emitter Built-in bootstrap diodes with current limiting resistor APPLICATION AC 400Vrms(DC voltage:800v or
More informationSLIMDIP-L TRANSFER MOLDING TYPE INSULATED TYPE
OUTLINE MAIN FUNCTION AND RATINGS RC-IGBT inverter bridge for three phase DC-to-AC power conversion Built-in bootstrap diodes with current limiting resistor Open emitter type APPLICATION AC 100~240V (DC
More informationFPAM30LH60 PFC SPM 2 Series for 2-Phase Interleaved PFC
FPAM30LH60 PFC SPM 2 Series for 2-Phase Interleaved PFC Features Low Thermal Resistance Thanks to Al 2 O 3 DBC Substrate 600 V - 30 A 2-Phase Interleaved PFC Including A Drive IC for Gate Driving and Protection
More informationPS22A74. < Dual-In-Line Package Intelligent Power Module > Publication Date : January 2012 TRANSFER MOLDING TYPE INSULATED TYPE
OUTLINE MAIN FEATURES AND RATINGS 3 phase DC/AC inverter 1200V / 15A Built-in LPT-CSTBT (5th generation IGBT) Insulated transfer molding package N-side IGBT open emitter APPLICATION AC 400V class motor
More information< Dual-In-Line Package Intelligent Power Module > PSS25SA2FT TRANSFER MOLDING TYPE INSULATED TYPE
OUTLINE MAIN FEATURES AND RATINGS 3 phase DC/AC inverter 1200V / 25A Built-in LPT-CSTBT (6th generation IGBT) Built-in bootstrap diodes with current limiting resistor Insulated transfer molding package
More informationPS11035 Intellimod Module Application Specific IPM 20 Amperes/600 Volts
F A D E G U W X C 2 1 3 5 4 6 7 8 10 14 9 11 12 13 15 16 (S) B J K L M AA BB S T V 21 22 23 24 25 26 27 28 29 30 FF 1 CBU+ 2 CBU- 3 CBV+ 4 CBV- 5 CBW+ 6 CBW- 7 VD 8 UP Outline Drawing and Circuit Diagram
More informationSmart Pack Electric Co., Ltd <Intelligent Power Module> SPE10S60F-A TRANSFER-MOLD TYPE FULL PACK TYPE
INTEGRATED POWER FUNCTIONS 600V/10A low-loss 6th generation IGBT inverter bridge for three phase DC-to-AC power conversion. Open emitter type. Figure 1 INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS
More informationPS11036 Intellimod Module Application Specific IPM 30 Amperes/600 Volts
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 A D G H G J K M L GG EE (4 PLACES) BB N P 12 3 4 5 6 7 8 9 10 111213 14 1516 T S Q R U 21 22 23 24 25 26 27 28 29 W V X Z LABEL Outline Drawing and Circuit Diagram
More informationFSBS3CH60 Motion SPM 3 Series Features
FSBS3CH60 Motion SPM 3 Series Features UL Certified No.E209204(SPM27-BA package) 600 V-3 A 3-Phase IGBT Inverter Bridge Including Control ICs for Gate Driving and Protection Three Separate Negative DC-link
More informationFSAM30SH60A Motion SPM 2 Series
FSAM30SH60A Motion SPM 2 Series Features UL Certified No. E209204 600 V - 30 A 3 - Phase IGBT Inverter Bridge Including Control ICs for Gate Driving and Protection Three Separate Open - Emitter Pins from
More informationMITSUBISHI INTELLIGENT POWER MODULES PM800HSA060 FLAT-BASE TYPE INSULATED PACKAGE
PM8HSA6 A K J L M LABEL V (2 REQD) C E R E B W 5 FO 4 VC CI 2 SR 1 V1 U φ (4 HOLES) G S φ (2 PLS) TYP Q 12 4 5 F D T SQ PIN (5 PLS) P H C Description: Mitsubishi Intelligent Power Modules are isolated
More informationPS21767 Intellimod Module Dual-In-Line Intelligent Power Module 30 Amperes/600 Volts
ual-in-line Intelligent Power Module B Z H AE AF AJ AK Z AH T E AA AB G F F F F F 28 27 26 25 24 23 22 21 20 19 1817 16 15 14 13 12 1110 9 8 7 6 5 4 3 2 1 31 29 30 32 33 ETAIL "" AB C A ETAIL "A" ETAIL
More informationPSS25NC1FT TRANSFER MOLDING TYPE INSULATED TYPE
OUTLINE MAIN FUNCTION CI(Converter + Inverter) type IPM 3-phase Inverter 3-phase Converter RATING Inverter part : 25A/1200V (CSTBT) APPLICATION AC400V three phase motor inverter drive * With brake circuit
More informationFSBB30CH60DF. Motion SPM 3 Series. FSBB30CH60DF Motion SPM 3 Series. Features. General Description. Applications.
FSBB30CH60DF Motion SPM 3 Series Features UL Certified No. E209204 (UL1557) 600 V - 30 A 3-Phase IGBT Inverter with Integral Gate Drivers and Protection Low-Loss, Short-Circuit Rated IGBTs Very Low Thermal
More informationFSBB10CH120D Motion SPM 3 Series
FSBB10CH120D Motion SPM 3 Series Features 1200 V - 10 A 3-Phase IGBT Inverter with Integral Gate Drivers and Protection Low-Loss, Short-Circuit Rated IGBTs Very Low Thermal Resistance Using Al 2 O 3 DBC
More informationSTK A-E. Applications Air conditioner three-phase compressor motor driver.
Ordering number : EN*A1339A STK621-043A-E Thick-Film Hybrid IC Air Conditioner Three-Phase Compressor Motor Driver IMST Inverter Power Hybrid IC Overview The STK621-043A-E is a 3-phase inverter power hybrid
More informationTYPE INSULATED MAIN FUNCTION OUTLINE. Brake circuit RATING APPLICATION INTEGRATED. protection (UV), supply) fault (N-side. File E P1 (1)
< DualInLine Package Intelligent Power Module > TRNSFER MOLDING OUTLINE MIN FUNCTION CIB(Converter + Inverter + Brake) type IPM 3phase Inverter Brake circuit 3phase Converter RTING Inverter part : 35/1200
More informationPSM03S93E5-A TRANSFER MOLDING TYPE INSULATED TYPE
OUTLINE MAIN FUNCTION AND RATINGS 3 phase DC/AC inverter 500V / 3A (MOSFET) N-side MOSFET open source Built-in bootstrap diodes with current limiting resistor APPLICATION AC 100~240Vrms(DC voltage:400v
More informationFPAB30BH60 PFC SPM 3 Series for Single-Phase Boost PFC
FPAB30BH60 PFC SPM 3 Series for Single-Phase Boost PFC Features UL Certified No. E209204 (UL1557) 600 V - 30 A Single-Phase Boost PFC with Integral Gate Driver and Protection Very Low Thermal Resistance
More informationPSS15MC1FT TRANSFER MOLDING TYPE INSULATED TYPE
OUTLINE MAIN FUNCTION CIB(Converter Inverter Brake) type IPM 3-phase Inverter Brake circuit 3-phase Converter RATING Inverter part : 15A/1200V (CSTBT) APPLICATION AC400V three phase motor inverter drive
More informationFPDB30PH60 PFC SPM 3 Series for 2-Phase Bridgeless PFC
FPDB30PH60 PFC SPM 3 Series for 2-Phase Bridgeless PFC Features UL Certified No. E209204 (UL1557) 600 V - 30 A 2-Phase Bridgeless PFC with Integral Gate Driver and Protection Very Low Thermal Resistance
More informationFPDB40PH60B PFC SPM 3 Series for 2-Phase Bridgeless PFC
FPDB40PH60B PFC SPM 3 Series for 2-Phase Bridgeless PFC Features UL Certified No. E209204 (UL1557) 600 V - 40 A 2-Phase Bridgeless PFC with Integral Gate Driver and Protection Very Low Thermal Resistance
More informationChapter 1. Product Outline
Chapter 1 Product Outline Contents Page 1. Introduction... 1-2 2. Product line-up... 1-4 3. Definition of Type Name and Marking Spec... 1-5 4. Package outline dimensions... 1-6 5. bsolute Maximum Ratings...
More informationFPAB30BH60B PFC SPM 3 Series for Single-Phase Boost PFC
FPAB30BH60B PFC SPM 3 Series for Single-Phase Boost PFC Features UL Certified No. E209204 (UL1557) 600 V - 30 A Single-Phase Boost PFC with Integral Gate Driver and Protection Very Low Thermal Resistance
More informationSmart Pack Electric Co., Ltd <Intelligent Power Module> SPE05M50F-A TRANSFER-MOLD TYPE FULL PACK TYPE
Control Part Applications 500V/5A low-loss MOSFET inverter driver for Small Power AC Motor Drives Figure 1 Features 500V Rds(on)=1.8Ohm(Max)MOSFET 3-Phase inverter with Gate Drivers and protection Separate
More informationCM200DY-24A. APPLICATION AC drive inverters & Servo controls, etc CM200DY-24A. IC...200A VCES V Insulated Type 2-elements in a pack
CMDY-A CMDY-A IC...A CES... Insulated Type -elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 9 8 CE E C E G GE 8 () -φ6. MOUNTING
More informationAIM5C05B060N1 Dual-In-Line Package Intelligent Power Module
Dual-In-Line Package Intelligent Power Module External View Features and Functions 15 1 16 23 UL Recognized: UL1557 File E345245 600V-5A (Trench Shielded Planar Gate IGBT) 3 phase Inverter module including
More informationPM50RSK060 Intellimod Module Three Phase + Brake IGBT Inverter Output 50 Amperes/600 Volts
Powerex, Inc., 2 Hillis Street, Youngwood, Pennsylvania 15697-18 (724) 925-7272 PM5RSK6 Three Phase + Brake IGBT Inverter Output 5 Amperes/6 olts U J A B EE DD THICK TYPICAL 19 PLACES 12 34 7 5 6 8 9 11
More informationV VPC V FO V WPI W FO W UP UFO V VPI GND GND GND GND V CC OUT OUT. Dimensions Inches Millimeters L
MITSUBISHI TELLIGET POWER MODULES SULATED PACKAGE D R - DIA. (4 TYP.) E H U V J 12 A B 34 7 5 6 8 9 11 13 15 17 19 T (15 TYP.) Q (4 TYP.) 10 12 14 16 18 U V P B W L M M M M M G 6.0 ± 0.1 X 0.8 ± 0.1 MM
More informationFSB44104A Motion SPM 45 LV Series
FSB44104A Motion SPM 45 LV Series Features UL Certified No.E209204 (UL1557) 40 V, R DS(ON) = 4.1 m Max.) 3-Phase MOSFET Inverter Module with Gate Drivers and Protection Low Thermal Resistance Using Ceramic
More informationTYP K "T" (4 TYP) TYP TYP UP UFO V VPI GND GND GND GND IN V CC OUT S I
MITSUBISHI TELLIGENT POWER MODULES PM7RSK6 SULATED PACKAGE B D. UPC. UFO. UP. UPI. PC 6. FO 7. P 8. PI 9. WPC. WFO. WP. WPI. NC. NI. BM 6. UN 7. N 8. WN 9. FO. P. BR... N U. W A E W F G H P J K L 6 7 8
More informationMG200Q2YS60A(1200V/200A 2in1)
TOSHIBA IGBT Module Silicon N Channel IGBT (V/A in) High Power Switching Applications Motor Control Applications Integrates a complete half bridge power circuit and fault-signal output circuit in one package.
More informationRecommended wiring and layout
hapter 5 ontents Page 1. Examples of Application ircuits... 5-2 2. ecommendation and Precautions in PB design... 5-5 Fuji Electric o., Ltd. 5-1 hapter 5 1. Examples of Application ircuits In this chapter,
More informationY Y D T SQ PIN (10 PLS) L N TERMINAL CODE 5 : FNO 4 : VNC N 3 : CN1 2 : NC 1 : VN1 5 : FPO 4 : VPC P 3 : CP1 2 : NC 1 : VP1. FWDi IGBT C2E1.
PM8DV1B6 Powerex, Inc., 173 Pavilion Lane, oungwood, Pennsylvania 1697 (724) 92-7272 www.pwrx.com Single Phase IGBT Inverter Output 8 Amperes/6 Volts F (4 PLACES) A C U V B E H (3 TP) C2E1 E2 C1 4 3 2
More informationSLLIMM small low-loss intelligent molded module IPM, 3-phase inverter - 15 A, 600 V short-circuit rugged IGBT. Description. Table 1.
SLLIMM small low-loss intelligent molded module IPM, 3-phase inverter - 15 A, 600 V short-circuit rugged IGBT Applications Datasheet - production data 3-phase inverters for motor drives Home appliance,
More informationCM150TL-12NF. APPLICATION AC drive inverters & Servo controls, etc CM150TL-12NF. IC...150A VCES...600V Insulated Type 6-elements in a pack
CMTL-NF CMTL-NF IC... CES...6 Iulated Type 6-elements in a pack PPLICTION C drive inverters & Servo controls, etc OUTLINE DRWING & CIRCUIT DIGRM Dimeio in mm.6. 6 ±. -φ. MOUNTING HOLES N P WP P UP CN L
More informationMotion-SPM FPAB30BH60B. Smart Power Module(SPM ) for Front-End Rectifier. General Description. Features. Applications. April Fig. 1.
FPAB30BH60B Smart Power Module(SPM ) for Front-End Rectifier General Description FPAB30BH60B is an advanced smart power module(spm ) of PFC(Power Factor Correction) that Fairchild has newly developed and
More informationDescription of Terminal Symbols and Terminology
Quality is our message Chapter 2 Description of Terminal Symbols and Terminology Contents Page 1. Description of Terminal Symbols...2-2 2. Description of Terminology...2-3 2 1 1 Description of Terminal
More informationPM300DSA060 Intellimod Module Single Phase IGBT Inverter Output 300 Amperes/600 Volts
Powerex, Inc., 2 Hillis Street, Youngwood, Pennsylvania 15697-18 (724) 925-7272 PM3DSA6 Single Phase IGBT Inverter Output 3 Amperes/6 Volts G A B G J N T - DIA. (2 TYP.) N SIDE 1. VN1 2. SNR 3. CN1 4.
More informationFNA V Motion SPM 2 Series. FNA V Motion SPM 2 Series. Features. General Description. Applications.
FNA23060 600 V Motion SPM 2 Series Features UL Certified No. E209204 (UL1557) 600 V - 30 A 3-Phase IGBT Inverter, Including Control ICs for Gate Drive and Protections Low-Loss, Short-Circuit-Rated IGBTs
More informationT - 4 TYP. XØ (2 PLACES) W SQ. PIN (10 PLACES) TERMINAL CODE 1. VN1 2. SNR 3. CN1 4. VNC 5. FNO VP1 RFO AMP E2 C2E1 C1
PM2DVA12 Powerex, Inc., 2 Hillis Street, Youngwood, Pennsylvania 15697-18 (724) 925-7272 Single Phase IGBT Inverter Output 2 Amperes/12 Volts A D T - 4 TYP. XØ (2 PLACES) B E F J H R S NUTS - 3 TYP. U
More informationTOSHIBA IGBT Module Silicon N Channel IGBT MG400Q2YS60A
MGQYSA TOSHIBA IGBT Module Silicon N Channel IGBT MGQYSA High Power Switching Applications Motor Control Applications Integrates a complete half bridge power circuit and fault-signal output circuit in
More informationPP400B060-ND. H-Bridge POW-R-PAK IGBT Assembly 400 Amperes/600 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com H-Bridge POW-R-PAK IGBT Assembly Q Q J P (8 PLACES) +DC C2E1 R (2 PLACES) PIN 1 N U B M N F DC L (6 PLACES) G
More informationCP15TD1-24A. DIP-CIB 3Ø Converter + 3Ø Inverter + Brake 15 Amperes/1200 Volts
Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 2.68±.1 68.±.3 B 1.73±.2 44.±.5 C.58±.4 14.7±.1 D 3.1±.2 79.±.5 E 2.83 72. F.16±.1 4.±.3 G 2.83±.1 72.±.3 H.7 2. J.2±.8 5.±.2 K.87 22.
More informationDescription of Terminal Symbols and Terminology
Contents Page 1. Description of Terminal Symbols... 2-2 2. Description of Terminology... 2-3 2-1 1. Description of Terminal Symbols Table 2-1 and 2-2 show the description of terminal symbols and terminology
More informationU P V VPI VFO WFO UP UFO V VPC GND GND
N A C D Q Q Q 1 234 5678 9 11 13 15 17 2 14 16 18 V (14 TYP.) R (2 TYP.) 1. VUPC 2. UFO 3. UP 4. VUPI 5. VVPC 6. VFO 7. VP 8. VVPI 9. VWPC 10. WFO 11. WP 12. VWPI 13. 14. 15. 16. 17. 18. 19. 20. 21. 22.
More informationU P V VPI VFO R (2 TYP.) WFO UP UFO V VPC GND GND
N A C D Q Q Q 1 234 5678 9 11 13 15 17 2 14 16 18 V (14 TYP.) R (2 TYP.) 1. VUPC 2. UFO 3. UP 4. VUPI 5. VVPC 6. VFO 7. VP 8. VVPI 9. VWPC 10. WFO 11. WP 12. VWPI 13. 14. 15. 16. 17. 18. 19. 20. 21. 22.
More informationAIM5D05B060M1S. Dual-In-Line Package Intelligent Power Module. Features. External View. Applications. Internal Equivalent Circuit / Pin Configuration
Dual-In-Line Package Intelligent Power Module External View 1 15 16 Size: 33.4 x 15 x 3.6 mm 23 Features UL Recognized: UL1557 File E345245 600V-5A (Trench Shielded Planar Gate IGBT) 3 phase Inverter module
More informationAPPLICATION Acoustic noise-less 1.5kW/AC400V Class 3 Phase inverter and other motor control applications. 4-φ ± ± 1 0.
MITSUBISHI SEMICONDUCTOR TYPE TYPE INTEGRTED FUNCTIONS ND FETURES 3-Phase IGBT inverter bridge cfigured by the latest 3rd. generati IGBT and
More information