Silicon Carbide Technology
|
|
|
- Jerome Harmon
- 5 years ago
- Views:
Transcription
1 your REACH OUT TO US Silicon Carbide Technology
2 YOUR SOURCE FOR SILICON CARBIDE Deep Technical Expertise Silicon carbide offers significant advantages in high-power, high-voltage applications where power density, higher performance and reliability are of the utmost importance. Industrial applications like solar inverters, welding, plasma cutters, fast vehicle chargers and oil exploration are a few examples that benefit from the higher breakdown field strength and improved thermal conductivity that SiC offers over silicon (Si) material. Advantages of designing in SiC include: SiC diodes have near-zero reverse recovery current Improved efficiencies/decreased thermal dissipation Higher operating junction temperature Smaller power electronics/system size Higher power density Higher operating frequency Simple parallel operation Reduced overall system cost Realize the Performance Advantages of SiC Diodes and MOSFETs Comparison Conditions: Operating Voltage = 800V Current = 20A peak, 10A avg Device Case Temp = 100 C Device Junction Temp = 150 C SiC MOSFETS offer lower losses compared with Si MOSFETs and higher operation frequency compared with Si IGBTs. SiC diodes offer near-zero reverse recovery charge compared to Si PIN diodes. Significantly Reduce Losses by Incorporating SiC Products in Your Design These are modeled results for comparison purposes only. Results will vary by specific application. 2
3 NEW! SiC Tech Hub at SiC tech hub SiC New Products SiC Technical Resources SiC Videos GET THE LATEST ON SiC POWER PRODUCTS delivered right to your inbox Sign up! Realize the benefits of Silicon Carbide technology with Richardson RFPD s offering of SiC transistors, diodes, transistor modules and SiC/Si hybrid modules. Utilize our SiC Tech Hub for the latest products and news regarding the adoption of this technology in power electronics circuits. Reach out to Richardson RFPD for design assistance anytime. Look to Richardson RFPD for the SiC Leaders Silicon Carbide Power Transistors/Modules Part Number Voltage (V) C2M D 10-PZ123BA080ME-M909L18Y 10-PZ126PA080ME-M909F18Y APTMC120HR11CT3G APTMC60TL11CT3AG C2M D 10-PZ12B2A045MR-M330L18Y APTMC120HRM40CT3G CCS050M12CM2 APT50MC120JCU2 10-PZ12NMA030MR-M340F18Y APTMC120AM55CT1AG APTMC60TLM55CT3AG CAS100H12AM1 QJD QJD APT100MC120JCU2 APTMC60TLM20CT3AG APTMC60TLM14CAG APTMC120AM08CD3AG C2M D 1700 Current Configuration (A) Single SiC MOSFET Triple boost/sic MOSFET/SiC diode 3 phase inverter/sic MOSFET/SiC diode Phase leg/dual CE/SiC MOSFET/IGBT/SiC diode Three level/sic MOSFET/SiC diode Single SiC MOSFET Dual boost/sic MOSFET/SiC diode Phase leg/dual CE/SiC MOSFET/IGBT/SiC diode Three phase bridge/sic MOSFET/SiC diode Boost/SiC MOSFET/SiC diode MNPC/SiC MOSFET/IGBT/SiC diode Phase leg/sic MOSFET/SiC diode Three level/sic MOSFET/SiC diode Phase leg/sic MOSFET/SiC diode Split dual/sic MOSFET/SiC diode Split dual/sic MOSFET/SiC diode Boost/SiC MOSFET/SiC diode Three level/sic MOSFET/SiC diode Three level/sic MOSFET/SiC diode Phase leg/sic MOSFET/SiC diode Single SiC MOSFET Package Type TO x66 33x66 TO x66 47x108 SOT x66 SP1 50x88 56x110 56x110 SOT-227 SP6 D3 TO Supplier Vincotech Vincotech Vincotech Vincotech Powerex Powerex 3
4 Silicon Carbide/Silicon Hybrid Modules Part Number Voltage Current Configuration Package Supplier (V) (A) Type APTM50HM75SCTG Full bridge/mosfet/series diode/sic diode SP4 APT58M50JCU Boost/MOSFET/SiC diode SOT-227 APT58M50JCU Buck/MOSFET/SiC diode SOT-227 APTM50AM38SCTG Phase leg/mosfet/series diode/sic diode SP4 APTM50AM24SCG Phase leg/mosfet/series diode/sic diode SP6 20-1B06IPA004MC-P953A Full bridge/inverter/inegrated driver/sic diode 36x72 Vincotech 20-1B06IPA010MC-P955A Full bridge/inverter/inegrated driver/sic diode 36x72 Vincotech 10-FZ06BIA099FS-P893E Boost/H bridge/mosfet/igbt/sic diode 33x66 Vincotech 10-FZ06NRA099FS-P963F NPC/COOLMOS/IGBT/SiC diode 33x66 Vincotech 10-F0062TA099FH02-P980D Dual boost/1ph rect/scr/coolmos/sic diode 33x66 Vincotech 10-F006PPA020SB01-M685B Full bridge/boost/3 phase/coolmos/igbt/sic diode 33x66 Vincotech 10-FZ062TA099FH01-P980D Dual boost/1ph rect/scr/coolmos/sic diode 33x66 Vincotech 10-FZ062TA099FH-P980D Dual boost/1ph rect/coolmos/sic diode 33x66 Vincotech 10-FZ06BIA070FS-P894E Boost/H bridge/mosfet/igbt/sic diode 33x66 Vincotech 10-PY06NRA041FS-M413FY NPC/MOSFET/SiC diode 37x82 Vincotech APTC60DDAM70CT1G Dual boost/coolmos/sic diode SP1 APTC60DSKM70CT1G Dual buck/coolmos/sic diode SP1 APTC60HM70SCTG Full bridge/coolmos/series diode/sic diode SP4 10-FZ062UA040FP-P982D Dual boost/1ph rect/mosfet/igbt/sic diode 33x66 Vincotech 10-FZ06BIA083FI-P896E Boost/H bridge/mosfet/sic diode 33x66 Vincotech 10-FZ06NRA041FS02-P965F NPC/COOLMOS/IGBT/SiC diode 33x66 Vincotech 10-FZ06NRA045FH-P965F NPC/MOSFET/IGBT/SiC diode 33x66 Vincotech 10-FZ06RIA045FH-P906D Full bridge/h bridge/mosfet/igbt/sic diode 33x66 Vincotech 10-PZ06NRA041FS02-P965F68Y NPC/MOSFET/IGBT/SiC diode 33x66 Vincotech 10-FZ062UA040FP-P982D Dual boost/1ph rect/mosfet/sic diode 33x66 Vincotech 10-FZ06BIA045FH01-P897E Boost/H bridge/coolmos/igbt/sic diode 33x66 Vincotech 10-FZ06BIA045FH02-P897D Boost/H bridge open emitter/mosfet/igbt/sic diode 33x66 Vincotech 10-FZ06BIA045FH-P897E Boost/H bridge/mosfet/igbt/sic diode 33x66 Vincotech 10-FZ06NBA045FH-P915L Symmetric boost/mosfet/sic diode 33x66 Vincotech 10-PZ06NBA041FS-P915L68Y Symmetric boost/mosfet/sic diode 33x66 Vincotech APT50N60JCCU Boost/COOLMOS/SiC diode SOT-227 APTC60DDAM45CT1G Dual boost/coolmos/sic diode SP1 APTC60DSKM45CT1G Dual buck/coolmos/sic diode SP1 APTC60HM45SCTG Full bridge/coolmos/series diode/sic diode SP4 10-FZ062UA040FP01-P982D Dual boost/1ph rect/scr/mosfet/igbt/sic diode 33x66 Vincotech 10-FZ062UA040FP02-P982D Dual boost/1ph rect/mosfet/igbt/sic diode 33x66 Vincotech 10-FZ062UA040FP03-P982D Dual boost/1ph rect/scr/mosfet/igbt/sic diode 33x66 Vincotech 10-FZ06NPA045FP-P967F NPC/MOSFET/IGBT/SiC diode 33x66 Vincotech APTC60AM45BC1G Boost/Phase leg/coolmos/igbt/sic diode SP1 APTC60AM83BC1G Boost/Phase leg/coolmos/igbt/sic diode SP1 APT50GF60JCU Boost/IGBT/SiC diode SOT-227 APTCV40H60CT1G Full bridge/coolmos/igbt/sic diode SP1 APTCV60HM45BC20T3G Boost/COOLMOS/SiC diode + Full bridge/coolmos/igbt SP3 APTCV60HM45RCT3G Fast rectifier bridge + Full bridge/coolmos/igbt/sic diode SP3 10-FZ06BIA041FS01-P898E Boost/H bridge/coolmos/igbt/sic diode 33x66 Vincotech APTC60AM35SCTG Phase leg/coolmos/series diode/sic diode SP4 10-PY06NRA021FS-M410FY NPC/MOSFET/SiC diode 37x82 Vincotech 10-FZ06NRA069FP02-P967F NPC/COOLMOS parallel IGBT/IGBT/SiC diode 33x66 Vincotech 10-FZ06NPA070FP-P969F NPC/MOSFET/IGBT/SiC diode 33x66 Vincotech APTC60AM24SCTG Phase leg/coolmos/series diode/sic diode SP4 APTC60DAM24CT1G Boost/COOLMOS/SiC diode SP1 APTC60SKM24CT1G Buck/COOLMOS/SiC diode SP1 10-FZ06NIA045FH-P925F NPC/MOSFET/IGBT/SiC diode 33x66 Vincotech 4
5 Silicon Carbide/Silicon Hybrid Modules (cont d) Part Number Voltage Current Configuration Package Supplier (V) (A) Type 10-FZ06NRA084FP02-P969F NPC/COOLMOS parallel IGBT/IGBT/SiC diode 33x66 Vincotech 10-FZ06NBA084FP-M306L Symmetric boost/mosfet/igbt/sic diode 33x66 Vincotech APTGF90DA60CT1G Boost/IGBT/SiC diode SP1 APTC60AM18SCG Phase leg/coolmos/series diode/sic diode SP6 APTC60DAM18CTG Boost/COOLMOS/SiC diode SP4 10-FZ06NBA110FP-M306L Symmetric boost/mosfet/igbt/sic diode 33x66 Vincotech APTC60TAM21SCTPAG Triple phase leg/coolmos/sic diode SP6-P 10-FY06BIA080MF-M527E Dual boost/h bridge/coolmos/sic diode 37x82 Vincotech 10-FY07BIA041MC-M528E Dual boost/pseudo H bridge/mosfet/sic diode 37x82 Vincotech APTC80H29SCTG Full bridge/coolmos/series diode/sic diode SP4 APTC80A15SCTG Phase leg/coolmos/series diode/sic diode SP4 APTC80A10SCTG Phase leg/coolmos/series diode/sic diode SP4 APTC80AM75SCG Phase leg/coolmos/series diode/sic diode SP6 APTC90H12SCTG Full bridge/coolmos/series diode/sic diode SP4 APT33N90JCCU Boost/COOLMOS/SiC diode SOT-227 APT33N90JCCU Buck/COOLMOS/SiC diode SOT-227 V23990-P621-F68-PM Dual boost/coolmos/sic diode 33x66 Vincotech APTC90AM60SCTG Phase leg/coolmos/series diode/sic diode SP4 APTC90DAM60CT1G Boost/COOLMOS/SiC diode SP1 APTC90SKM60CT1G Buck/COOLMOS/SiC diode SP1 APTM100H45SCTG Full bridge/mosfet/series diode/sic diode SP4 APT26M100JCU Boost/MOSFET/SiC diode SOT-227 APT26M100JCU Buck/MOSFET/SiC diode SOT-227 APTM100TA35SCPG Triple phase leg/mosfet/series diode/sic diode SP6-P APTM100TA35SCTPG Triple phase leg/mosfet/series diode/sic diode SP6-P APTM100DA18CT1G Boost/MOSFET/SiC diode SP1 APTM100A13SCG Phase leg/mosfet/series diode/sic diode SP6 APTM100UM65SCAVG Single MOSFET/series diode/sic diode SP6 APT15GF120JCU2 15 Boost/IGBT/SiC diode SOT-227 APT20M120JCU2 15 Boost/MOSFET/SiC diode SOT-227 APT20M120JCU3 15 Buck/MOSFET/SiC diode SOT-227 APTM120DA30CT1G 23 Boost/MOSFET/SiC diode SP1 APT25GF120JCU2 25 Boost/IGBT/SiC diode SOT-227 APT25GLQ120JCU2 25 Boost/IGBT/SiC diode SOT-227 APT40GLQ120JCU2 40 Boost/IGBT/SiC diode SOT-227 APTGLQ40DDA120CT3G 40 Dual boost/igbt/sic diode APTGLQ40HR120CT3G 40 Phase leg/dual CE/IGBT/SiC diode APTGF50DA120CT1G 50 Boost/IGBT/SiC diode SP1 APTGLQ80HR120CT3G 80 Phase leg/dual CE/IGBT/SiC diode V23990-P629-F62-PM 80 Dual boost/igbt/sic diode 33x66 Vincotech V23990-P629-F63-PM 80 Dual boost/igbt/sic diode 33x66 Vincotech APTM120U10SCAVG 86 Single MOSFET/series diode/sic diode SP6 QID Split dual IGBT/SiC diode 56x110 Powerex QID Split dual IGBT/SiC diode 56x110 Powerex Silicon Carbide Test/Evaluation Products Part Number CRD-001 Description SiC MOSFET isolated gate driver Supplier Part Number CRD-060DD12P Description 60W Aux Power Supply Demonstration Board Supplier 5
6 Silicon Carbide Diodes Part Number Voltage Current Configuration Package Supplier (V) (A) Type CSD01060A Single TO CSD01060E Single TO CSD01060E-TR Single TO C3D1P7060Q Single QFN C3D02060A Single TO C3D02060E Single TO C3D02060E-TR Single TO C3D02060F Single TO-220-F2 C3D03060A Single TO C3D03060E Single TO C3D03060E-TR Single TO C3D03060F Single TO-220-F2 C3D04060A Single TO C3D04060E Single TO C3D04060E-TR Single TO C3D04060F Single TO-220-F2 APT06DC60HJ Full bridge SOT-227 C3D06060A Single TO C3D06060F Single TO-220-F2 C3D06060G Single TO C3D06060G-TR Single TO C3D08060A Single TO C3D08060G Single TO C3D08060G-TR Single TO APTDC10H601G Full bridge SP1 C3D10060A Single TO C3D10060G Single TO C3D16060D Dual common cathode TO-247 APT2X20DC60J Dual anti-parallel SOT-227 APT2X21DC60J Dual parallel SOT-227 APTDC20H601G Full bridge SP1 C3D20060D Dual common cathode TO-247 APT2X30DC60J Dual anti-parallel SOT-227 APT2X31DC60J Dual parallel SOT-227 APT2X40DC60J Dual anti-parallel SOT-227 APT2X41DC60J Dual parallel SOT-227 APT40DC60HJ Full bridge SOT-227 APTDC40H601G Full bridge SP1 APT2X50DC60J Dual anti-parallel SOT-227 APT2X51DC60J Dual parallel SOT-227 APT2X60DC60J Dual anti-parallel SOT-227 APT2X61DC60J Dual parallel SOT-227 APTDC902U601G Dual parallel SP1 C3D04065A Single TO C3D06065A Single TO C3D08065I Single TO C3D08065A Single TO APT10SCD65K Single TO-220 6
7 Silicon Carbide Diodes (cont d) Part Number Voltage Current Configuration Package Supplier (V) (A) Type APT10SCD65KCT Dual common cathode TO-220 C3D10065A Single TO C3D10065I Single TO APT20SCD65K Single TO-220 APT30SCD65B Single TO-247 C4D02120A 2 Single TO C2D05120A 5 Single TO C2D05120E 5 Single TO C4D05120A 5 Single TO C4D02120E 6.9 Single TO C4D08120A 7.5 Single TO C4D08120E 7.5 Single TO C4D05120E 9 Single TO APT10DC120HJ 10 Full bridge SOT-227 APT10SCD120B 10 Single TO-247 APT10SCD120BCT 10 Dual common cathode TO-247 APT10SCD120K 10 Single TO-220 C4D10120A 10 Single TO C4D10120E 16 Single TO C4D10120E-TR 16 Single TO C4D10120D 18 Dual common cathode TO-247 APT20DC120HJ 20 Full bridge SOT-227 APT20SCD120B 20 Single TO APT20SCD120BHB 20 Dual Half bridge TO-247 APT20SCD120S 20 Single D3PAK APT2X20DC120J 20 Dual anti-parallel SOT-227 APT2X21DC120J 20 Dual parallel SOT-227 APTDC20H1201G 20 Full bridge SP1 C4D15120A 20 Single TO C4D20120A 20 Single TO APT2X30DC120J 30 Dual anti-parallel SOT-227 APT2X31DC120J 30 Dual parallel SOT-227 APT30SCD120B 30 Single TO APT30SCD120S 30 Single D3PAK C4D20120D 32 Dual common cathode TO-247 APT2X40DC120J 40 Dual anti-parallel SOT-227 APT2X41DC120J 40 Dual parallel SOT-227 APT40DC120HJ 40 Full bridge SOT-227 APTDC40H1201G 40 Full bridge SP1 C4D30120D 43 Dual common cathode TO-247 APT2X50DC120J 50 Dual anti-parallel SOT-227 APT2X51DC120J 50 Dual parallel SOT-227 C4D40120D 54 Dual common cathode TO-247 APT2X60DC120J 60 Dual anti-parallel SOT-227 APT2X61DC120J 60 Dual parallel SOT-227 C3D10170H Single TO C3D25170H Single TO
8 PACKAGE STYLES TO x66 (Flow 0) TO TO-220-F2 TO-247 TO x88 47x108 TO TO-220 TO TO x108 (D3) 62x108 (SP6) 43x73 () 62x108 (SP6P) 41x52 (SP1) 40x93 (SP4) D3PAK SOT-227 (Isotop) 37x82 (Flow 1) 36x72 (Flow 1B) 56x110 Visit for the latest on SiC power products from the leading suppliers 2013 Richardson RFPD. All rights reserved. All brands and trademarks are property of their respective owners. Specifications subject to change without notice /MK130087/March Printed in the USA.
Power Management. RF & Power. Silicon Carbide Technology Selector Guide. arrow.com/rfpower
Power Management RF & Power Silicon Carbide Technology Selector Guide arrow.com/rfpower Your Source for Silicon Carbide Deep Technical Expertise Silicon carbide (SiC) offers significant advantages in highpower,
Silicon Carbide Technology Overview
Silicon Carbide Technology Overview MARCH 2017 www.richardsonrfpd.com richardsonrfpd.com Your Source for Silicon Carbide Power Products Deep Technical Expertise Silicon carbide (SiC) offers significant
CREE POWER PRODUCTS Cree SiC HIGH FREQUENCY FOR HIGH POWER. SMALLER. COOLER. BETTER.
CREE POWER PRODUCTS 2015 Cree SiC HIGH FREQUENCY FOR HIGH POWER. SMALLER. COOLER. BETTER. Industry-leading technology and service. That s why Cree should be your power semiconductor partner. Why Cree?
CREE POWER PRODUCTS 2012 REVOLUTIONIZING POWER ELECTRONICS WITH SILICON CARBIDE
CREE POWER PRODUCTS 2012 REVOLUTIONIZING POWER ELECTRONICS WITH SILICON CARBIDE Cree, the silicon carbide expert, is leading the power semiconductor revolution. Cree, an innovator of semiconductors for
Power Matters Microsemi SiC Products
Microsemi SiC Products James Kerr Director of Marketing Power Discrete Products Microsemi Power Products MOSFETs (100V-1200V) Highest Performance SiC MOSFETs 1200V MOSFETs FREDFETs (MOSFET with fast body
Pitch Pack Microsemi full SiC Power Modules
Pitch Pack Microsemi full SiC Power Modules October 2014 SiC Main Characteristics vs. Si Characteristics SiC vs. Si Results Benefits Breakdown field (MV/cm) Electron sat. velocity (cm/s) Bandgap energy
Silicon Carbide Semiconductor Products
Power Matters Silicon Carbide Semiconductor Products Low Switching Losses Low Gate Resistance High Power Density High Thermal Conductivity High Avalanche (UIS) Rating Reduced Heat Sink Requirements High
SiC Switches in Booster Power Modules for Highly Efficient, High-frequency Operation in Solar Inverters
SiC Switches in Booster Power Modules for Highly Efficient, High-frequency Operation in Solar Inverters Dr. Evangelos Theodossiu, Product Marketing Manager What Drives the Great Demand for SiC? Outstanding
Silicon carbide Semiconductor Products
Power Matters. Silicon carbide Semiconductor Products Low Switching Losses High Power Density High Thermal Conductivity Reduced Heat Sink Requirements High Temperature Operation Reduced Circuit Size and
D AB Z DETAIL "B" DETAIL "A"
QJD1211 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Split Dual SiC MOSFET Module 1 Amperes/12 Volts Y A AA F D AB Z AC Q DETAIL "B" Q P Q U B
Silicon carbide Semiconductor Products
Power Matters. Silicon carbide Semiconductor Products Low Switching Losses High Power Density High Thermal Conductivity Reduced Heat Sink Requirements High Temperature Operation Reduced Circuit Size and
Using the Latest Wolfspeed C3M TM SiC MOSFETs to Simplify Design for Level 3 DC Fast Chargers
Using the Latest Wolfspeed C3M TM SiC MOSFETs to Simplify Design for Level 3 DC Fast Chargers Abstract This paper will examine the DC fast charger market and the products currently used in that market.
Cree PV Inverter Tops 1kW/kg with All-SiC Design
Cree PV Inverter Tops 1kW/kg with All-SiC Design Alejandro Esquivel September, 2014 Power Forum 2014 (Bologna) presentation sponsored by: Presentation Outline 1. Meeting an Industry Need a) 1kW/Kg b) No
A new compact power modules range for efficient solar inverters
A new compact power modules range for efficient solar inverters Serge Bontemps, Pierre-Laurent Doumergue Microsemi PPG power module Products, Chemin de Magret, F-33700 Merignac Abstract The decrease of
Product Selector Guide. SiC FETs, SiC JFETs, and SiC Schottky Diodes
Product Selector Guide SiC FETs, SiC JFETs, and SiC Schottky Diodes UJ3C & UF3C Series, 650/ SiC FETs Key Features Excellent body diode performance (Vf < 2V) Drive with any Si and/or SiC gate drive voltage
TYPICAL PERFORMANCE CURVES = 25 C = 110 C = 175 C. Watts T J. = 4mA) = 0V, I C. = 3.2mA, T j = 25 C) = 25 C) = 200A, T j = 15V, I C = 125 C) = 25 C)
TYPICAL PERFORMANCE CURVES 6V APT2GN6J APT2GN6J Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low (ON) and are ideal for low frequency applications that require
GS66516T Top-side cooled 650 V E-mode GaN transistor Preliminary Datasheet
Features 650 V enhancement mode power switch Top-side cooled configuration R DS(on) = 25 mω I DS(max) = 60 A Ultra-low FOM Island Technology die Low inductance GaNPX package Easy gate drive requirements
Introducing SiC Schottky Diode QFN Package
Introducing SiC Schottky Diode QFN Package 2012 Agenda Introduction to Cree Power Schottky Diode QFN Package Benefits in LED and Lighting g Applications Reference Design Test Data Copyright 2012, Cree,
D AB Z DETAIL "B" DETAIL "A"
QID1215 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (72) 925-7272 www.pwrx.com Split Dual Si/SiC Hybrid IGBT Module 1 Amperes/12 Volts Y A AA F D AB Z AC Q DETAIL "B" Q
Comparison of SiC and Si Power Semiconductor Devices to Be Used in 2.5 kw DC/DC Converter
Comparison of SiC and Si Power Semiconductor Devices to Be Used in 2.5 kw DC/DC Converter M. G. Hosseini Aghdam Division of Electric Power Engineering Department of Energy and Environment Chalmers University
GS61008T Top-side cooled 100 V E-mode GaN transistor Preliminary Datasheet
Features 100 V enhancement mode power switch Top-side cooled configuration R DS(on) = 7 mω I DS(max) = 90 A Ultra-low FOM Island Technology die Low inductance GaNPX package Easy gate drive requirements
POWER INVERTERS IN FORM OF MICROMODULE WITH DIRECT LIQUID COOLING.
POWER INVERTERS IN FORM OF MICROMODULE WITH DIRECT LIQUID COOLING Alexander Krainyukov 1, Rodions Saltanovs 2 1 SIA ElGoo Tech, Latvia; 2 Riga Technical University, Latvia krainukovs.a@tsi.lv Abstract.
1200 V CoolSiC Schottky Diode Generation 5: New level of system efficiency and reliability. May 2016
1200 V CoolSiC Schottky Diode Generation 5: New level of system efficiency and reliability May 2016 Table of contents 1 Application areas 2 Application benefits 3 Features and benefits 4 Portfolio what
APT80SM120J 1200V, 56A, 40mΩ Package APT80SM120J
APT8SM12J 12V, 56A, 4mΩ Package APT8SM12J PRELIMINARY Silicon Carbide N-Channel Power MOSFET DESCRIPTION Silicon carbide (SiC) power MOSFET product line from Microsemi increase your performance over silicon
High Density Power Semiconductors Integrated Power Solutions
www.solitrondevices.com High Density Power Semiconductors Integrated Power Solutions Power Transistors 40V to 700V N-Channel and P-Channel JAN/JANTX/JANTXV Standard Products S Level Equivalent Screening
1200 V SiC Super Junction Transistors operating at 250 C with extremely low energy losses for power conversion applications
1200 V SiC Super Junction Transistors operating at 250 C with extremely low energy losses for power conversion applications Ranbir Singh, Siddarth Sundaresan, Eric Lieser and Michael Digangi GeneSiC Semiconductor,
SiC Transistor Basics: FAQs
SiC Transistor Basics: FAQs Silicon Carbide (SiC) MOSFETs exhibit higher blocking voltage, lower on state resistance and higher thermal conductivity than their silicon counterparts. Oct. 9, 2013 Sam Davis
Designing Reliable and High-Density Power Solutions with GaN
Designing Reliable and High-Density Power Solutions with GaN 1 Detailed agenda Why is GaN Exciting GaN Fundamentals Cost and Reliability Totem Pole PFC Isolated LLC Motor Drive LiDAR Driving GaN Choosing
GS61004B 100V enhancement mode GaN transistor Preliminary Datasheet
Features 100V enhancement mode power switch Bottom-side cooled configuration R DS(on) = 15 mω I DS(max) = 45 A Ultra-low FOM Island Technology die Low inductance GaNPX package Easy gate drive requirements
GS61008P Bottom-side cooled 100 V E-mode GaN transistor Preliminary Datasheet
Features 100 V enhancement mode power switch Bottom-side cooled configuration R DS(on) = 7 mω I DS(max) = 90 A Ultra-low FOM Island Technology die Low inductance GaNPX package Easy gate drive requirements
ZLED7000 / ZLED7020 Application Note - Buck Converter LED Driver Applications
ZLED7000 / ZLED7020 Application Note - Buck Converter LED Driver Applications Contents 1 Introduction... 2 2 Buck Converter Operation... 2 3 LED Current Ripple... 4 4 Switching Frequency... 4 5 Dimming
GS66508T Top-side cooled 650 V E-mode GaN transistor Preliminary Datasheet
Features 650 V enhancement mode power switch Top-side cooled configuration R DS(on) = 50 mω I DS(max) = 30 A Ultra-low FOM Island Technology die Low inductance GaNPX package Easy gate drive requirements
10-PZ126PA080ME-M909F18Y. Maximum Ratings
flow3xphase-sic 12V/8mΩ Features SiC-Power MOSFET s and Schottky Diodes 3 phase inverter topology with split output Improved switching behavior (reduced turn on energy and X-conduction) Ultra Low Inductance
Power Electronics for Inductive Power Transfer Systems
Power Electronics for Inductive Power Transfer Systems George Kkelis g.kkelis13@imperial.ac.uk Power Electronics Centre Imperial Open Day, July 2015 System Overview Transmitting End Inductive Link Receiving
High Voltage, Silicon Carbide MOSFET
The Leader in High Temperature Semiconductor Solutions CHT-NEPTUNE PRELIMINARY DATASHEET High-Temperature Version: 3.1 High Voltage, Silicon Carbide MOSFET General description CHT-NEPTUNE is a high-temperature,
MP8051 Bridge Regulator Integrated MOSFETS and Schottky Diodes
The Future of Analog IC Technology MP8051 Bridge Regulator Integrated MOSFETS and Schottky Diodes DESCRIPTION The MP8051 is a high-efficiency, monolithic, switching bridge regulator with two self-driven
(a) All-SiC 2-in-1 module
All-SiC -in- Module CHONABAYASHI, Mikiya * OTOMO, Yoshinori * KARASAWA, Tatsuya * A B S T R A C T Fuji Electric has developed an utilizing a SiC device that has been adopted in the development of a high-performance
VDS (V) min 600 VTDS (V) max 750 RDS(on) (mω) max* 180. Qrr (nc) typ 54. * Dynamic R(on)
600V Cascode GaN FET in TO-220 (drain tab) Description The 600V, 150mΩ gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer better efficiency through lower gate charge, faster
All-SiC Modules Equipped with SiC Trench Gate MOSFETs
All-SiC Modules Equipped with SiC Trench Gate MOSFETs NAKAZAWA, Masayoshi * DAICHO, Norihiro * TSUJI, Takashi * A B S T R A C T There are increasing expectations placed on products that utilize SiC modules
CHT-PLUTO-B1230 Preliminary Datasheet High Temperature 1200V/30A Dual SiC MOSFET Module
The Leader in High Temperature Semiconductor Solutions CHT-PLUTO-B123 Preliminary Datasheet High Temperature 12V/3A Dual SiC MOSFET Module Version: 1.1 General description CHT-PLUTO-B123 is a high temperature
Features. Description. Table 1: Device summary Order code Marking Package Packaging SCT50N120 SCT50N120 HiP247 Tube
Silicon carbide Power MOSFET 1200 V, 65 A, 59 mω (typ., TJ=150 C) in an HiP247 package Datasheet - production data Features Very tight variation of on-resistance vs. temperature Very high operating junction
ALL Switch GaN Power Switch - DAS V22N65A
Description ALL-Switch is a System In Package (SIP) switch. A Normally-Off safe function is integrated within the package, designed according to SmartGaN topology, an innovation by VisIC Technologies.
C3M K. Silicon Carbide Power MOSFET C3M TM MOSFET Technology. N-Channel Enhancement Mode. Features. Package. Benefits.
C3M0030090K Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features Package V DS I D @ 25 C R DS(on) 900 V 63 A 30 mω C3M TM SiC MOSFET technology Optimized package with
MG200Q2YS60A(1200V/200A 2in1)
TOSHIBA IGBT Module Silicon N Channel IGBT (V/A in) High Power Switching Applications Motor Control Applications Integrates a complete half bridge power circuit and fault-signal output circuit in one package.
Full Bridge LLC ZVS Resonant Converter Based on Gen2 SiC Power MOSFET
Full Bridge LLC ZVS Resonant Converter Based on Gen2 SiC Power MOSFET Cree Power Application Engineering Rev. 2 1 Overview ZVS converters are typically used in the following applications: Industrial power
GS66506T Top-side cooled 650 V E-mode GaN transistor Preliminary Datasheet
Features 650 V enhancement mode power switch Top-side cooled configuration R DS(on) = 67 mω I DS(max) = 22.5 A Ultra-low FOM Island Technology die Low inductance GaNPX package Easy gate drive requirements
Features. Description. Table 1: Device summary. Order code Marking Package Packaging SCT30N120 SCT30N120 HiP247 Tube
Silicon carbide Power MOSFET 1200 V, 45 A, 90 mω (typ., TJ = 150 C) in an HiP247 package Datasheet - production data Figure 1: Internal schematic diagram G(1) D(2, TAB) S(3) AM01475v1_noZen Features Very
APT80SM120B 1200V, 80A, 40mΩ
V, A, mω Package Silicon Carbide N-Channel Power MOSFET TO-247 DESCRIPTION Silicon carbide (SiC) power MOSFET product line from Microsemi increase your performance over silicon MOSFET and silicon IGBT
SPP1433. P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP1433 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored
P Preliminary Dual Fast Diode Series
P Preliminary 1 2 3 Schematic Description: The Powerex Dual Fast Diode Series Modules utilize field proven super fast H-series FWD chips necessary for fast switching applications. The terminal design of
TOSHIBA IGBT Module Silicon N Channel IGBT MG400Q2YS60A
MGQYSA TOSHIBA IGBT Module Silicon N Channel IGBT MGQYSA High Power Switching Applications Motor Control Applications Integrates a complete half bridge power circuit and fault-signal output circuit in
SILICON CARBIDE (SiC) MERGED-PiN-SCHOTTKY (MPS ) DIODE
SILICON CARBIDE (SiC) MERGED-PiN-SCHOTTKY (MPS ) DIODE GeneSiC s new generation of SiC diodes feature the combination of excellent forward and switching characteristics with best-in-class surge current
Hybrid Si-SiC Modules for High Frequency Industrial Applications
Hybrid Si-SiC Modules for High Frequency Industrial Applications ABSTRACT This presentation introduces a new family of 1200V IGBT modules that combine high switching frequency optimized silicon IGBTs with
Dual P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP6506 is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored
1200V GaN Half Bridge VM40HB120D GaN Power Integrated
Description Based on GaN technology as an Intelligent Power Module configurated as Half Bridge. GaN transistors and gate drivers (Buffers) with temperature and current sensors are combined in a single
600V APT75GN60BDQ2 APT75GN60SDQ2 APT75GN60BDQ2G* APT75GN60SDQ2G*
G C E TYPICAL PERFORMANCE CURVES APT7GNB_SDQ(G) V APT7GNBDQ APT7GNSDQ APT7GNBDQG* APT7GNSDQG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies,
NXH80B120H2Q0SG. Dual Boost Power Module V, 40 A IGBT with SiC Rectifier
NXH8B1HQSG Dual Boost Power Module 1 V, 4 A IGBT with SiC Rectifier The NXH8B1HQSG is a power module containing a dual boost stage consisting of two 4 A / 1 V IGBTs, two 15 A / 1 V silicon carbide diodes,
Quiet-Switching Power MOSFETs, FREDFETs, and IGBTs. Product Overview and Introduction Schedule
Quiet-Switching Power MOSFETs, FREDFETs, and IGBTs Product Overview and Introduction Schedule TM What is MOS 8? A new generation of POWER MOS products from Microsemi Power Products Group (formerly Advanced
HEXFRED Ultrafast Soft Recovery Diode, 6 A
N/C Base cathode + 2 PRODUCT SUMMARY V R 200 V V F at 6 A at 25 C 3.0 V (AV) 6 A t rr (typical) 26 ns (maximum) 50 C Q rr (typical) 6 nc di (rec)m /dt (typical) at 25 C 0 A/µs I RRM (typical) 4.4 A D 2
Wide Band-Gap (SiC and GaN) Devices Characteristics and Applications. Richard McMahon University of Cambridge
Wide Band-Gap (SiC and GaN) Devices Characteristics and Applications Richard McMahon University of Cambridge Wide band-gap power devices SiC : MOSFET JFET Schottky Diodes Unipolar BJT? Bipolar GaN : FET
TPH3202PS TPH3202PS. GaN Power Low-loss Switch PRODUCT SUMMARY (TYPICAL) TO-220 Package. Absolute Maximum Ratings (T C =25 C unless otherwise stated)
PRODUCT SUMMARY (TYPICAL) V DS (V) 600 R DS(on) ( ) 0.29 Q rr (nc) 29 Features Low Q rr Free-wheeling diode not required Low-side Quiet Tab for reduced EMI GSD pin layout improves high speed design RoHS
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
Anti-Parallel APTX6DJ Parallel APTX6DJ ISOTOP SOT-7 "UL Recognized" APTX6DJ V 6A APTX6DJ V 6A DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS Anti-Parallel Diode -Switchmode
SiC Cascodes and its advantages in power electronic applications
SiC Cascodes and its advantages in power electronic applications WBG Power Conference, Munich, 5 th December 2017 Christopher Rocneanu Director Sales Europe and North America cro@unitedsic.com +4915121063411
= 25 C = 100 C = 150 C. Watts T J = 0V, I C. = 500µA, T j = 25 C) = 25 C) = 100A, T j = 15V, I C = 125 C) = 0V, T j = 25 C) 2 = 125 C) 2 = ±20V)
V The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior
235 W Maximum Power Dissipation (whole module) 470 T J Junction Operating Temperature -40 to 150. Torque strength
Discontinued PRODUCT SUMMARY (TYPICAL) V DS (V) 600 R DS(on) (m ) 30 GaN Power Hybrid HEMT Half-Bridge Module Features High frequency operation Free-wheeling diode not required Applications Compact DC-DC
600V APT75GN60B APT75GN60BG*
G C E TYPICAL PERFORMANCE CURVES APT75GNB(G) V APT75GNB APT75GNBG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
Reference Design for M909-F18 SiC Modules
Reference Design for M909-F18 SiC Modules Quick Start Guide for M909-F18 SiC Modules Reference Design for M909-F18 SiC Modules Rev. 01 page 1 Table of Contents 1 Abstract... 4 2 An introduction to the
GaN Power Switch & ALL-Switch TM Platform. Application Notes AN01V650
GaN Power Switch & ALL-Switch TM Platform Application Notes AN01V650 Table of Contents 1. Introduction 3 2. VisIC GaN Switch Features 4 2.1 Safe Normally OFF circuit : 5 2.2 D-Mode GaN Transistor: 8 3.
Some Key Researches on SiC Device Technologies and their Predicted Advantages
18 POWER SEMICONDUCTORS www.mitsubishichips.com Some Key Researches on SiC Device Technologies and their Predicted Advantages SiC has proven to be a good candidate as a material for next generation power
XI'AN IR-PERI Company
FineSiliconPowerNetworks HALF-BRIDGE IGBT Features Applications IGBT NPT Technology AC & DC Motor controls VCES = 1200V Ic = 75A VCE(ON) typ. = 2.8V @ Ic = 75A 10μs Short circuit capability Low turn-off
GaN in Practical Applications
in Practical Applications 1 CCM Totem Pole PFC 2 PFC: applications and topology Typical AC/DC PSU 85-265 V AC 400V DC for industrial, medical, PFC LLC 12, 24, 48V DC telecomm and server applications. PFC
SiC MOSFETs Based Split Output Half Bridge Inverter: Current Commutation Mechanism and Efficiency Analysis
SiC MOSFETs Based Split Output Half Bridge Inverter: Current Commutation Mechanism and Efficiency Analysis Helong Li, Stig Munk-Nielsen, Szymon Bęczkowski, Xiongfei Wang Department of Energy Technology
ELEC-E8421 Components of Power Electronics
ELEC-E8421 Components of Power Electronics MOSFET 2015-10-04 Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) Vertical structure makes paralleling of many small MOSFETs on the chip easy. Very
GS P Bottom-side cooled 100 V E-mode GaN transistor Preliminary Datasheet. Features. Applications. Description.
Features 100 V enhancement mode power switch Bottom-side cooled configuration R DS(on) = 5 mω I DS(max) = 120 A Ultra-low FOM Island Technology die Low inductance GaNPX package Easy gate drive requirements
GS61008T Top-side cooled 100 V E-mode GaN transistor Preliminary Datasheet
Features 100 V enhancement mode power switch Top-side cooled configuration R DS(on) = 7 mω I DS(max) = 90 A Ultra-low FOM Island Technology die Low inductance GaNPX package Easy gate drive requirements
UNISONIC TECHNOLOGIES CO., LTD 02NM60 Preliminary Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD 02NM60 Preliminary Power MOSFET 0.2A, 600V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 02NM60 is an Super Junction MOSFET Structure and is designed to have better
Package. TAB Drain. Symbol Parameter Value Unit Test Conditions Note. V GS = 15 V, T C = 25 C Fig. 19 A 22 V GS = 15 V, T C = 100 C.
C3M659J Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode V DS I D @ 25 C R DS(on) 9 V 35 A 65 mω Features New C3M SiC MOSFET technology New low impedance package with driver
SPN6435. Dual N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN6435 is the Dual N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance
High Current, High Power OPERATIONAL AMPLIFIER
High Current, High Power OPERATIONAL AMPLIFIER FEATURES HIGH OUTPUT CURRENT: A WIDE POWER SUPPLY VOLTAGE: ±V to ±5V USER-SET CURRENT LIMIT SLEW RATE: V/µs FET INPUT: I B = pa max CLASS A/B OUTPUT STAGE
Figure 1: ROHM Semiconductor SiC Diode portfolio
SiC-Diodes, SiC-MOSFETs and Gate Driver IC The best use of SiC devices and applications are shown. Uninterruptible Power Supplies (UPS) will be described in more detail. Additional to SiC, a portfolio
HEXFRED Ultrafast Soft Recovery Diode, 16 A
HEXFRED Vishay High Power Products FEATURES Ultrafast recovery Ultrasoft recovery Very low I RRM Very low Q rr Specified at operating conditions Designed and qualified for industrial level Base cathode
HEXFRED Ultrafast Soft Recovery Diode, 15 A
Vishay High Power Products TO-247AC modified HEXFRED Base common cathode 2 1 3 Cathode Anode FEATURES Ultrafast recovery Ultrasoft recovery Very low I RRM Very low Q rr Specified at operating conditions
Applications for Isolated Gate Drivers
Applications for Isolated Gate Drivers Multiple Choice Quiz TI Precision Labs Isolation 1 1. must be used for the interface between high voltage and user-accessible circuitry (like connectors or communications
TO-263. I D,max = 5 Clamped Inductive Load. T VJ = 175 o C, I G = 0.25 A,
Normally OFF Silicon Carbide Junction Transistor Features 175 C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch Suitable for connecting an anti-parallel
GS66516B Bottom-side cooled 650 V E-mode GaN transistor Preliminary Datasheet
Features 650 V enhancement mode power switch Bottom-side cooled configuration R DS(on) = 25 mω I DS(max) = 60 A Ultra-low FOM Island Technology die Low inductance GaNPX package Easy gate drive requirements
GS66508B Bottom-side cooled 650 V E-mode GaN transistor Preliminary Datasheet
Features 650 V enhancement mode power switch Bottom-side cooled configuration R DS(on) = 50 mω I DS(max) = 30 A Ultra-low FOM Island Technology die Low inductance GaNPX package Easy gate drive requirements
Efficiency improvement with silicon carbide based power modules
Efficiency improvement with silicon carbide based power modules Zhang Xi*, Daniel Domes*, Roland Rupp** * Infineon Technologies AG, Max-Planck-Straße 5, 59581 Warstein, Germany ** Infineon Technologies
DTMOS IV Efficiency Advantages of Superjunction Transistors. By Michael Piela, Toshiba Electronics Europe
DTMOS IV Efficiency Advantages of Superjunction Transistors By Michael Piela, Toshiba Electronics Europe Summary Superjunction MOSFETs are able to deliver a combination of high conduction and switching
GS66508P Bottom-side cooled 650 V E-mode GaN transistor Preliminary Datasheet
Features 650 V enhancement mode power switch Bottom-side cooled configuration R DS(on) = 50 mω I DS(max) = 30 A Ultra-low FOM Island Technology die Low inductance GaNPX package Easy gate drive requirements
GS66508T Top-side cooled 650 V E-mode GaN transistor Preliminary Datasheet
Features 650 V enhancement mode power switch Top-side cooled configuration R DS(on) = 50 mω I DS(max) = 30 A Ultra-low FOM Island Technology die Low inductance GaNPX package Easy gate drive requirements
P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET Description The is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density
Cree SiC Power White Paper: The Characterization of dv/dt Capabilities of Cree SiC Schottky diodes using an Avalanche Transistor Pulser
Cree SiC Power White Paper: The Characterization of dv/dt Capabilities of Cree SiC Schottky diodes using an Avalanche Transistor Pulser Introduction Since the introduction of commercial silicon carbide
GS66508T Top-side cooled 650 V E-mode GaN transistor Preliminary Datasheet
Features 650 V enhancement mode power switch Top-side cooled configuration R DS(on) = 50 mω I DS(max) = 30 A Ultra-low FOM Island Technology die Low inductance GaNPX package Easy gate drive requirements
HCS65R110FE (Fast Recovery Diode Type) 650V N-Channel Super Junction MOSFET
HCS65R110FE (Fast Recovery Diode Type) 650V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested
ELG4139: Power Electronics Systems Objective To Realize and Design Various Power Supplies and Motor Drives!
ELG4139: Power Electronics Systems Objective To Realize and Design Various Power Supplies and Motor Drives! Power electronics refers to control and conversion of electrical power by power semiconductor
GS61008P Bottom-side cooled 100 V E-mode GaN transistor Preliminary Datasheet. Features. Applications. Description. Circuit Symbol.
Features 100 V enhancement mode power switch Bottom-side cooled configuration R DS(on) = 7 mω I DS(max) = 90 A Ultra-low FOM Island Technology die Low inductance GaNPX package Easy gate drive requirements
Smart Energy Solutions for the Wireless Home
Smart Energy Solutions for the Wireless Home Advanced Metering Infrastructure (AMI) ZigBee (IEEE 802.15.4) Wireless Local Area Networks (WLAN) Industrial and Home Control Plug-in Hybrid Electric Vehicles
Design and Applications of HCPL-3020 and HCPL-0302 Gate Drive Optocouplers
Design and Applications of HCPL-00 and HCPL-00 Gate Drive Optocouplers Application Note 00 Introduction The HCPL-00 (DIP-) and HCPL-00 (SO-) consist of GaAsP LED optically coupled to an integrated circuit
provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the APT80GA60LD40
APT8GA6LD 6V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low E off is achieved through leading technology silicon design and lifetime control processes. A reduced E off
Power Electronics. Electrical Engineering. for
Power Electronics for Electrical Engineering By www.thegateacademy.com Syllabus Syllabus for Power Electronics Characteristics of Semiconductor Power Devices: Diode, Thyristor, Triac, GTO, MOSFET, IGBT;